SiC Power Devices And Modues Application Note
Application NoteSiC Power Devices and ModulesApplication NoteRev.003Note:The evaluation data and other information described in this application noteare the results of evaluation by ROHM under identical conditions andpresented as references.We do not guarantee the characteristics described herein. 2020 ROHM Co., Ltd.1/88No. 63AN102E Rev.0032020.11
SiC Power Devices and ModulesApplication NoteContents1. SiC semiconductor .51.1 Physical properties and features of SiC . 51.2 Features as power devices . 52. Features of SiC SBD.62.1 Device structure and features . 62.2 Forward characteristics of SiC SBD . 72.3 Recovery characteristics of SiC SBD . 82.4 Forward surge characteristics of SiC SBD . 92.5 Precautions for using SiC SBD in series or parallel . 102.5.1 Series connection. 102.5.2 Parallel connection . 103. Features of SiC MOSFET . 113.1 Device structure and features . 113.2 Standardized on-resistance (RonA) . 123.3 VDS-ID characteristics . 133.4 Driving gate voltage and on-resistance . 143.5 Temperature coefficient of on-resistance . 153.6 VGS-ID characteristics . 163.7 Turn ON characteristics . 173.8 Turn OFF characteristics. 183.9 Internal gate resistance. 193.10 Recovery characteristics of body diode . 203.11 Temperature dependence of BV (breakdown voltage) . 213.12 1700 V SiC MOSFET for flyback. 223.13 Third generation trench gate SiC MOSFET . 233.14 Temperature dependence of switching characteristics. 243.15 Gate voltage dependence of switching characteristics . 253.16 Drain current dependence of switching speed . 253.17 Effect of parasitic inductance on switching characteristics . 263.18 Kelvin source package . 274. Evaluation board for discrete SiC MOSFET . 284.1 Evaluation board for SiC MOSFET (discrete) . 284.2 Case example of evaluation . 295. Gate drive. 32５.1 Cautions for circuit systems . 325.1.1 Driving with pulse transformer . 325.1.2 High-side driving with bootstrap system . 325.1.3 High-side driving with isolated power supply . 325.1.4 Negative bias generation circuit . 33５.2 Buffer circuit . 34５.3 UVLO (under voltage lock out: function to prevent malfunction at low voltage) . 35５.4 Gate driver IC for SiC MOSFET . 36５.5 Recommended gate voltage (VGS) . 37 2020 ROHM Co., Ltd.2/88No. 63AN102E Rev.0032020.11
SiC Power Devices and ModulesApplication Note５.6 Recommended external gate resistance (RG EXT) . 38５.7 Recommended dead time (tDT) . 39５.8 Countermeasures against self-turn-on . 40５.9 Countermeasures against negative surge . 41５.10 Short-circuit protection . 425.10.1 DESAT . 425.10.2 Short-circuit protection in MOSFET equipped with current sense terminal . 43５.11 Recommended layout . 44５.12 Precautions for using MOSFET in series or parallel . 465.12.1 Series connection. 465.12.2 Parallel connection . 486. Features of SiC power module . 526.1 Features of SiC module . 526.2 Circuit configuration . 526.3 NTC thermistor. 546.4 Installation method for power module . 566.4.1 Installation of heatsink . 566.4.2 Installation of signal wires . 576.5 Switching characteristics. 586.5.1 Drain current dependence and temperature dependence . 586.5.2 Gate resistance dependence . 596.5.3 Gate bias dependence . 606.6 Comparison of switching loss with IGBT module . 616.6.1 Comparison of total switching loss . 616.6.2 Comparison of recovery loss (Err) . 616.6.3 Comparison of turn ON loss (Eon) . 626.6.4 Comparison of turn OFF loss (Eoff) . 626.7 Countermeasure against self-turn-on. 636.8 RBSOA (reverse bias safe operating area) . 646.9 VDS surge of diode conducting narrow pulse of small current . 656.10 G-type power module. 667. Evaluation board for module. 677.1 Drive board for SiC power module . 677.2 Countermeasures against surge voltage . 688. Reliability . 708.1 Reliability of SiC SBD . 708.1.1 dV/dt failure and dI/dt failure . 708.1.2 Result of reliability test for SiC SBD . 718.2 Reliability of SiC MOSFET . 738.2.1 Gate oxide film . 738.2.2 Threshold stability (gate positive bias) . 748.2.3 Threshold stability (gate negative bias) . 748.2.4 Threshold stability (third generation MOSFET) . 758.2.5 Short-circuit rating . 758.2.6 dV/dt failure . 75 2020 ROHM Co., Ltd.3/88No. 63AN102E Rev.0032020.11
SiC Power Devices and ModulesApplication Note8.2.7 Cosmic ray neutron-induced single-event effects. 768.2.8 Electrostatic discharge rating . 778.2.9 Cautions for power cycle . 778.3 Reliability of SiC power module . 798.3.1 Power cycle . 798.3.2HV-H3TRB (High Voltage High Humidity High Temperature Reverse Bias) . 808.3.3 Result of reliability test for SiC power module . 819. Construction of model name. 829.1 SiC SBD (discrete product) . 829.2 SiC MOSFET (discrete product) . 829.3 SiC power module. 839.4 SiC SBD (chip product) . 839.5 SiC MOSFET (chip product) . 8410. Example of application circuit. 8510.1 Power factor correction (PFC) circuit, boost chopper. 8510.2 Buck chopper . 8510.3 Buck-boost chopper . 8510.4 Totem pole PFC . 8610.5 Flyback converter. 8610.6 DC/DC converter (soft switching type) . 8610.7 Inverter for power conditioner . 8710.8 Inverter for IH . 8710.9 Motor drive . 8710.10 Relay . 88 2020 ROHM Co., Ltd.4/88No. 63AN102E Rev.0032020.11
SiC Power Devices and ModulesApplication Note1. SiC semiconductor1.1Physical properties and features of SiCSiC (silicon carbide) is a compound semiconductor material composed of silicon (Si) and carbon (C). Table 1-1 shows theelectrical characteristics of each semiconductor material. SiC has an excellent dielectric breakdown field intensity (breakdownfield) and bandgap (energy gap), which are 10 times and 3 times greater than Si, respectively. Furthermore, control over the pand n-types necessary for device manufacturing can be achieved in a wide range. Consequently, SiC is considered as apromising material for power devices that can exceed the limit of Si. SiC has various polytypes (crystal polymorphism), andeach polytype shows different physical properties. For power devices, 4H-SiC is considered to be ideal and its monocrystallinewafers between 4 inches and 6 inches are currently mass produced.Table 1-1. Electrical characteristics of semiconductor materialsPropertiesCrystal StructureEnergy Gap : E G (eV)Electron Mobility : μ n (cm2/Vs)2Hole Mobility : μ p (cm /Vs)6Breakdown Field : E B (V/cm) X10Thermal Conductivity (W/cm )Saturation Drift Velocity : v s (cm/s) X10 7Relative Dielectric Constamt : ε Sp, n ControlThermal 1004002000.31.5111.8 34.92.79.7 0.40.5212.8 31.32.79.5 �発光素子高温動作デバイス (混晶: 波長可変) (混晶: 波長可変)高周波デバイス 高周波デバイス 高周波デバイスDue to the high dielectric breakdown field intensity of SiC, which is approximately 10 times higher than that of Si, high1.2Features as power devicesbreakdown voltage power devices from 600 V to several thousand V can be manufactured with a drift layer having a higherimpurity concentration and a thinner thickness compared with Si devices. Most of the resistance component of high breakdownvoltage power devices is the resistance of this drift layer. Therefore, SiC can realize high breakdown voltage devices with a verylow on-re
Application Note SiC Power Devices and Modules Application Note Rev.003 Note: The evaluation data and other information described in this application note are the results of evaluation by ROHM under
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During his career, Ahmed Ben Slimane proposed lot of presentations towards an international audience. He authored/co-authored more than 20 publications in the semiconductor field and submitted a patent on the III-V hetero-structure for PV . ROADMAP FOR POWER SiC DEVICES SiC device* revenue Power supply High power applications First device PV .
White Paper Optimization of Freewheeling Device Implementation in SiC MOSFETs . SiC MOSFET devices have no tail current during device turn-off, resulting in a much lower turn-off loss compared with IGBT. . Adding an antiparallel SBD to SiC MOSFET, as shown in Figure 2 (c), may be necessary, but could increase the total capacitive charge and .
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Writing Human Factors Plans & Reports for Medical Technology Development pReVIeW COpY This is a preview edition of an AAMI guidance document and is intended to allow potential purchasers to evaluate the content of the document before making a purchasing decision. For a complete copy of this AAMI document contact AAMI at 1- 77-2-22 or visit www.aami.org. PREVIEW COPY This is a preview edition .
