NOIH2SM1000A HAS2 Image Sensor
NOIH2SM1000AHAS2 Image SensorINTRODUCTIONScopeThis datasheet details the ratings, physical, geometrical,electrical and electro-optical characteristics, and test- andinspection-data for the High Accuracy Star Tracker (HAS2)CMOS active pixel image sensor (CMOS APS).The device described in this document is protected by USpatent 6,225,670 and others.www.onsemi.com Always store the devices in a shielded environment thatTable 10 on page 9 provides a summary of the typevariants. The complete list of specifications for each typevariant is given in the specifications tables.All specifications are given at 22 3 C, under nominalclocking and bias conditions. Exceptions are noted in the‘Remarks’ field.protects against ESD damage (at least a non-ESDgenerating tray and a metal bag). Always wear a wrist strap when handling the devicesand use ESD safe gloves. The HAS2 is classified as class 1A (JEDECclassification - [AD02]) device for ESD sensitivity.For proper handling and storage conditions, refer to theON Semiconductor application note AN52561.Maximum RatingReturn Material Authorization (RMA)Component Type ValuesFigure 4 on page 24 shows the physical dimensions of theassembled component. The geometrical information inFigure 3 on page 10 describes the position of the die in thepackage.ON Semiconductor packages its image sensor products ina clean room environment under strict handling proceduresand ships all image sensor products in ESD-safe,clean-room-approved shipping containers. Productsreturned to ON Semiconductor for failure analysis should behandled under these same conditions and packed in itsoriginal packing materials, or the customer may be liable forthe product.Pin AssignmentStorage InformationTable 11 on page 9 specifies the maximum ratings. Donot exceed these ratings at any times, during use or storage.Physical Dimension and Geometrical InformationFigure 25 on page 39 contains the pin assignment. Thefigure contains a schematic drawing and a pin list. A detailedfunctional description of each pin is available in Pin List onpage 35.The components must be stored in a dust-free andtemperature-, humidity-and ESD-controlled environment. Store devices in special ESD-safe trays such that theglass window is never touched. Close the trays with EDS-safe rubber bands. Seal the trays in an ESD-safe conductive foil in cleanroom conditions. For transport and storage outside a clean room, pack thetrays in a second ESD-save bag that is sealed in cleanroom.Soldering InstructionsSoldering is restricted to manual soldering only. No waveor reflow soldering is allowed. For manual soldering, thefollowing restrictions are applicable: Solder 1 pin on each of the four sides of the sensor. Cool down for a minimum period of 1 minute beforesoldering another pin on each of the four sides. Repeat soldering of 1 pin on each side, including a 1minute cool down period.Additional InformationThe HAS sensor is subject to the standard Europeanexport regulations for dual use products. A Certificate ofConformance will be issued upon request at no additionalcharge. The CoC refers to this datasheet version.Handling PrecautionsThe component is susceptible to damage by electro-staticdischarge. Therefore, use suitable precautions for protectionduring all phases of manufacture, testing, packaging,shipment, and any handling. Follow these guidelines: Always manipulate devices in an ESD controlledenvironment. Semiconductor Components Industries, LLC, 2015January, 2015 Rev. 14Downloaded from Arrow.com.ITAR InformationAll the HAS2 type variants are ITAR-free components.1Publication Order Number:NOIH2SM1000A/D
NOIH2SM1000ATable 1. ORDERING INFORMATIONMarketing Part NumberDescriptionNOIH2SM1000T-HHCHAS2 Mono, Flight Model, Level 2NOIH2SM1000A-HHCHAS2 Mono, Engineering ModelNOIH2SM1000S-HHCHAS2 Mono, Flight Model, Level 1NOIH2SM1000A-HWCHAS2 Mono Windowless, Engineering ModelNOIH2SM1000S-HWCHAS2 Mono Windowless, Flight Model, Level 1Package84-pin JLCCORDERING CODE DEFINITIONFor information on device numbering and ordering codes, please download the Device Nomenclature technical note(TND310/D) from www.onsemi.com.APPLICABLE DOCUMENTSThe following documents form part of this specification:Table 2. APPLICABLE DOCUMENTSNo.ReferenceTitleAD01NPD 0064422Image Sensor Characterization StandardAD02JESD22-A114-BElectrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)AD0312MBE83443FProcess Identification Document for HAS2AD0412MON56972EVisual Inspection for FM devices1. Lot acceptance and screening are based on ESCC 9020. Please note that Lot Acceptance and Screening on page 6 is valid for the FlightModel Level 1 devices. For more information on Flight Model 1 Windowless devices, please contact imagesensors@onsemi.comwww.onsemi.com2Downloaded from Arrow.com.
NOIH2SM1000ADETAILED INFORMATIONDeviations from Generic SpecificationThe optical quality of the glass must have thespecifications in Table 15 on page 11.The anti reflective coating has a reflection coefficient lessthan 1.3% absolute and less than 0.8% on average, over abandwidth from 440 nm to 1100 nm.Lot acceptance and screening are based on ESCC 9020.See Lot Acceptance and Screening on page 6 and documentNPD 0067186 for more information.Mechanical RequirementsLevel 2 versus Level 1 DifferencesDimension CheckThe dimensions of the components specified here ischecked and must comply with the specifications and thetolerances indicated in Figure 4 on page 24Geometrical CharacteristicsThe geometrical characteristics of the componentsspecified here is checked and must comply with thespecifications and tolerances given in Figure 4 on page 24and Figure 3 on page 10MassThe maximum mass of the components specified here isspecified in Table 14 on page 10HAS2 Flight Model Level 2 devices differ from Level 1devices in Lot Acceptance and Screening Tests: 100% screening is applied with burn-in limited to 168 h Devices will be fully tested at room temperature and85 C. X/Y die placement is relaxed to 200 mm. Mismatching between odd and even columns inDestructive Readout is allowed but shall stay in thelimit of 127 LSB. The defect and particles specification will be the sameas for the Engineering Model - NOIH2SM1000A-HHC– with the exception of the defective columns which arenot allowed in the Level 2 devices. Refer to Table 10“Type Variant Summary” on page 9. Endurance testing during Wafer LAT is limited to a1000 h burn in and will be performed on 3 unscreenedparts. Prior to endurance testing and total dose testing, astabilization bake of 48 hrs, followed by a 168 hrsburn-in, shall be performed. During Wafer LAT, the Electro-optical measurementsare limited on 2 parts (1 from endurance and 1 fromradiation testing). For each assembly batch (manufacturing-lot), 2screened devices will be made available for a DPA test.An assembly batch is defined as a group of parts whichhave been assembled within a time window of less thanone week. The DPA devices can be rejected devices(glass lid cosmetic defects, electrical defects, ) buthave to be screened through the same thermal steps asthe HAS2 “level2”. The DPA test will be carried out byON Semiconductor as a customer courtesy.Prior to DPA testing, the following tests are performed:Solderability and Resistance to Solvents (markingpermeability).Materials and FinishesThe materials and finishes is as specified in this document.Where a definite material is not specified, a material whichenables the components to meet the performancerequirements of this specification must be used.CaseThe case is hermetically sealed and must have a ceramicbody and a glass window.Table 3. CASETypeJLCC 84MaterialBlack Alumina BA 914Thermal expansion coefficient7.6 x 10 6/KHermeticity 5 x 10 7 atms. cm3/sThermal resistance(Junction to case)3.633 C/WLead Material and FinishTable 4. LEAD MATERIAL AND FINISHLead MaterialKOVAR1e FinishNickel, min 2 mm2nd FinishGold, min 1.5 mmNOTE: As the glass lid removal is a best effort activity,the DPA test cannot be 100% guaranteed. Assembly lot acceptance testing is not performed.WindowThe window material is a BK7G18 glass lid withanti-reflective coating applied on both sides.www.onsemi.com3Downloaded from Arrow.com.
NOIH2SM1000AMarkingData PackEach set of devices will have a data pack which will bemade available to the customer. The data pack consists of: CoC form referring to the applicable specification Calibration data Screening Report Life Test Report and Radiation (Total Dose) TestReport for each wafer lot Electrical Test Report Spectral response data Visual Inspection Report DPA Test Report12GeneralThe marking must consist of lead identification andtraceability information.Lead IdentificationAn index to pin 1 must be located on the top of the packagein the position defined in Figure 4 on page 24. The pinnumbering is counter clock-wise, when looking at thetop-side of the component.Traceability InformationEach component must be marked such that completetraceability is maintained.The component must have a number as follows:321133XXXXX Specific Device CodeA Assembly LocationWL Wafer LotYY YearWW Work WeekNNNN Serial Number18475537454Figure 1. Product MarkingTable 5. PACKAGE MARK DECODEROrderable Part NumberPackage Mark: Line 1Package Mark: Line 2Package Mark: Line 3NOIH2SM1000T-HHCNOIH2SM1000T-HHC NNNNAWLYYWWNOIH2SM1000A-HHCNOIH2SM1000A-HHC NNNNAWLYYWWNOIH2SM1000S-HHCNOIH2SM1000S-HHC NNNNAWLYYWWNOIH2SM1000A-HWCNOIH2SM1000A-HWC NNNNAWLYYWWNOIH2SM1000S-HWCNOIH2SM1000S-HWC NNNNAWLYYWWwhere NNNN- serialized number controlled manually by ON Semiconductor, BELGIUMwhere DD-MM-YYYY represents the lot assembly dateNOIH2SM1000T-HHC has a Minimum Order Quantity of 10Electrical and Electro optical Measurementstiming diagrams in Figure 35 on page 46 and Figure 37 onpage 48.NOTE: The given bias and power supply settings implythat the devices are measured in ‘soft-reset’condition.Electrical and Electro optical Measurements at High andLow TemperatureTable 19 on page 15 and Table 20 on page 16 list theparameters to be measured to verify electrical andelectro-optical specifications. Unless otherwise specified,Electrical and Electro optical Measurements at ReferenceTemperatureThe parameters to be measured to verify the electrical andelectro-optical specifications are given in Table 18 onpage 14 and Table 27 on page 23. Unless otherwisespecified, the measurements must be performed at aenvironmental temperature of 22 3 C.For all measurements, the nominal power supply, bias,and clocking conditions apply. The nominal power supplyand bias conditions are given in Table 28 on page 23; thewww.onsemi.com4Downloaded from Arrow.com.
NOIH2SM1000Athe measurements must be performed at –40 (–5 0) C andat 85 ( 5 –0) C.Circuits for Electrical and Electro optical MeasurementsCircuits for performing the electro optical tests inTable 18 on page 14 and Table 27 on page 23 are shown inFigure 49 on page 58 to Figure 52 on page 58.Electrical Circuits for High Temperature Reverse BiasBurn-inNot ApplicableElectrical Circuits for Power Burn-inCircuits to perform the power burn-in test are shown inFigure 48 on page 57 and Figure 49 on page 58 of thisspecification.Burn in TestEnvironmental and Endurance TestsParameter Drift ValuesThe parameter drift values for power burn-in are specifiedin Table 21 on page 17. Unless otherwise specified, themeasurements must be conducted at an environmentaltemperature of 22 3 C and under nominal power supply,bias, and timing conditions.In addition to the drift value requirements, the devices donot exceed the limit values of any parameter, as indicated inTable 18 on page 14.Conditions for High Temperature Reverse Bias Burn-inNot ApplicableConditions for Power Burn-inThe conditions for power burn-in is specified in Table 24on page 19 of this specification.Electrical and Electro-optical Measurements onCompletion of Environmental TestThe parameters to be measured on completion ofenvironmental tests are listed in Table 25 on page 20. Unlessotherwise stated, the measurements must be performed at aenvironmental temperature of 22 3 C. Measurements ofdark current must be performed at 22 1 C and the actualenvironmental temperature must be reported with the testresults.Electrical and Electro-optical Measurements AtIntermediate Point During Endurance TestThe parameters to be measured at intermediate pointsduring endurance test of environmental tests are listed inTable 25 on page 20. Unless otherwise stated, themeasurements must be performed at an environmentaltemperature of 22 3 C.Electrical and electro-optical Measurements on Completionof Endurance TestThe parameters to be measured on completion ofendurance tests are listed in Table 25 on page 20. Unlessotherwise stated, the measurements must be performed at aenvironmental temperature of 22 3 C.Conditions for Operating Life TestThe conditions for operating life tests must be as specifiedin Table 24 on page 19 of this specification.Electrical Circuits for Operating Life TestCircuits for performing the operating life test are shownin Figure 49 on page 58 and next ones of this specification.Conditions for High Temperature Storage TestThe temperature to be applied must be the maximumstorage temperature specified in Table 11 on page 9 of thisspecification.www.onsemi.com5Downloaded from Arrow.com.
NOIH2SM1000ATotal Dose Radiation TestElectrical and Electro-optical MeasurementsThe parameters to be measured, prior to, during and oncompletion of the irradiation are listed in Table 27 onpage 23 of this specification. Only devices that meet thespecification in Table 18 on page 14 of this specificationmust be included in the test samples.ApplicationThe total dose radiation test must be performed inaccordance with the requirements of ESCC BasicSpecification 22900.Parameter Drift ValuesThe allowable parameter drift values after total doseirradiation are listed in Table 22 on page 18 . The parametersshown are valid after a total dose of 50 krad and168 h / 100 C annealing.Bias ConditionsContinuous bias must be applied during irradiation testingas shown in Figure 49 on page 58 and next ones of thisspecification.Lot Acceptance and ScreeningThis section describes the Lot Acceptance Testing (LAT)and screening on the HAS2 FM devices. All tests on devicelevel must be performed on screened devices (see Table 9 onpage 7)Wafer Lot AcceptanceThis is the acceptance of the silicon wafer lot. This mustbe done on every wafer lot that is used for the assembly offlight models.Table 6.TestTest MethodNumber of DevicesTest ConditionWafer processing data reviewPIDNANASEMESCC 214004 naked diesNATotal dose testESCC 229003 devices50 krad, not to exceed 3.6 krad/hrEndurance testMIL-STD-883 Method 10056 devices2000h at 125 CBefore and after total dose test and endurance test:Table 15. Three glass lids are chosen randomly from the lotand measured in detail. The results are compared withFigure 5 on page 25.Package Lot Acceptance Five packages are chosen randomly from the lot andmeasured in detail. The results are compared withFigure 4 on page 24. A solderability test is covered in the assembly lotacceptance tests (Table 7) Electrical measurements before and after at high, low, and room temperature. See Table 18 on page 14, Table19 on page 15 and Table 20 on page 16 of thisspecification.Visual inspection before and afterDetailed electro-optical measurements before and afterGlass Lot AcceptanceTransmission and reflectance curves that are deliveredwith each lot must be compared with the specifications inTable 7. ASSEMBLY LOT ACCEPTANCETestTest MethodNumber of DevicesTest ConditionSpecial assembly house inprocess controlBond strength testMIL-STD-883 method 20112Assembly house geometrical datareviewReviewAllSolder abilityMIL-STD883, method 20033Terminal strengthMIL-STD 883, method 2004Marking permanenceESCC 24800Geometrical measurements12MBE83937F5Temperature cyclingMIL-STD 883, method 10105Moisture resistanceJEDEC Std. Method A101-BTemperature cycling around dewpointESCC9020 8.15(a) phase 2DCondition B50 cycles–55 C / 125 C240 h at 85 C / 85%5www.onsemi.com6Downloaded from Arrow.com.DPhase 2
NOIH2SM1000ATable 7. ASSEMBLY LOT ACCEPTANCETestTest MethodResidual Gas AnalysisNumber of DevicesTest ConditionMIL-STD-883, method 10182Procedure 1Die shear testMIL-STD-883, method 20194N/ABond pull testMIL-STD-883, method 2011DPAAll wires Fine leak test gross leak testNOTES: As the glass lid is removed from the packageprior to DPA, the results of the DPA cannot beguaranteed.HAS2 does not comply with the moisture limitof ESCC9020 see document NPD 0067186. Fine- and gross-leak tests must be performed using thefollowing methods:Fine Leak test: MIL-STD-883, Test Method 1014,Condition A, 30 psi for 24 hGross Leak test: MIL-STD-883, Test Method 1014,Condition C, 30 psi for 24 hBefore and after the following tests are done:Electrical measurements conform to Table 18 onpage 14 of this specificationDetailed visual inspectionThe required leak rate for fine leak testing is5 x 10 7 atms.cm3/sTable 8. PERIODIC TESTINGTestTest MethodNumber ofDevicesTest ConditionMechanical shockMIL-STD 883, method 20022B - 5 shocks, 1500 g – 0.5 ms – ½ sine, 6 axesMechanicalvibrationMIL-STD 883, method 20072A - 4 cycles, 20 g 80 to 2000 Hz,0.06 inch 20 to 80 Hz,3 axesDie shear testMIL-STD-883 method 20192N/ABond pull testMIL-STD-883 method 2011DPAAll wiresFine- and gross-leak tests must be performed using thefollowing methods:Fine Leak Test: MIL-STD-883, Test Method 1014,Condition A, 30 psi for 24 hGross Leak Test: MIL-STD-883, Test Method 1014,Condition C, 30 psi for 24 hNOTE: As the glass lid is removed from the packageprior to DPA, the results of the DPA cannot beguaranteed.Periodic testing is required every two years. Before andafter the following tests are done: Electrical measurements conform to Table 18 onpage 14 Detailed visual inspection Fine leak test gross leak testThe required leak rate for fine leak testing is5 x 107 atms.cm3/sTable 9. SCREENINGNo.TestTest MethodNumber of DevicesTest Condition1Stabilization bakeMIL-STD-883 method 1008All48h at 125 C2HCRT Electrical measurements12MBE83443FAllHT 85 CLT –40 CRT 22 C3Visual inspection12MON56972EAll4Die placement measurements12MBE83937FAll5XRAYESCC 20900All6Fine leak testMIL-STD-883 method 1014AllA7Gross leak testMIL-STD-883 method 1014AllCwww.onsemi.com7Downloaded from Arrow.com.
NOIH2SM1000ATable 9. SCREENINGNo.TestTest MethodNumber of DevicesTest Condition8Temperature cyclingMIL-STD-883 method 1010AllB - 10 cycles–55 C 125 C9Biased Burn-inMIL-STD-883 method 1015All240 h at 125 C10Mobile Particle DetectionMIL-STD-883 method 2020AllA11Fine leak testMIL-STD-883 method 1014AllA12Gross leak testMIL-STD-883 method 1014AllC13HCRT Electrical measurements12MBE83443FAllHT 85 CLT –40 CRT 22 C14Final Visual Inspection12MON56972EAllFigure 2. HAS2 Assembly LAT Flowwww.onsemi.com8Downloaded from Arrow.com.
NOIH2SM1000ATABLES AND FIGURESSpecification TablesTable 10. TYPE VARIANT SUMMARYHAS2 Type VariantsEngineering ModelFlight ModelDead pixels10020Bright pixels in FPN image5020Bad pixels in PRNU image15050Bad columns50Bad rows502 adjacent bright pixels2524 or more adjacent bright pixels100DSNU defects at 22 dec BOL12001000DSNU defects at 22 dec EOL15001250Optical quality (see Optical Quality Definitions on page 66)Bright pixel clustersParticle contaminationFixed particles outside focal planeN/AN/AMobile particles 20 mm00Fixed particles on focal plane 20 mm00Mobile particles 10 mm and 20 mm2010Particles 10 mmN/AN/AWafer lot acceptance (see section Wafer Lot Acceptance on page 6)NOYesGlass lot acceptance (see section Glass Lot Acceptance on page 6)NOYesAssembly lot acceptance (Table 7 on page 6)NOYesPeriodic testing (Table 8 on page 7)NOYesScreening (Table 9 on page 7)NOYesCalibration dataNOYesVisual Inspection particle mappingNOYesFixed particles on focal plane 10
CMOS active pixel image sensor (CMOS APS). The device described in this document is protected by US patent 6,225,670 and others. Component Type Values Table 10 on page 9 provides a summary of the type variants. The complete list of specifications for
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SENSOR STATUS SENSOR BYPASS Press to bypass, press again to re-enable GREEN Sensor is dry RED Sensor is wet Red light indicates sensor is bypassed RAIN SENSOR BYPASS Blue/White wires to normally closed sensor terminals Orange/White wires to normally open sensor terminals 2 3 5 6 4 1 5 Wireless Rain
4. Sensor Settings pane—Set the sensor parameters in this pane 5. Status bar—Shows whether the sensor is connected, if a software update is available, and if the sensor data is being recorded to a file 6. Live Sensor Data controls—Use these controls to record, freeze, and play real-time sensor data, and to refresh the sensor connection
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