Parallel NOR Flash Automotive Memory

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1Gb: x16, 3V, MT28EW Automotive Parallel NOR FlashFeaturesParallel NOR Flash Automotive MemoryMT28EW01GABA1xJS-0AAT, MT28EW01GABA1xPC-0AATFeatures BLANK CHECK operation to verify an erased block CYCLIC REDUNDANCY CHECK (CRC) operation toverify a program pattern VPP/WP# protection– Protects first or last block regardless of blockprotection settings Software protection– Volatile protection– Nonvolatile protection– Password protection Extended memory block– 128-word (256-byte) block for permanent, secureidentification– Programmed or locked at the factory or by thecustomer JESD47-compliant– 100,000 (minimum) ERASE cycles per block– Data retention: 20 years (TYP) Package– 56-pin TSOP, 14 x 20mm (JS)– 64-ball LBGA, 11 x 13mm (PC) RoHS-compliant, halogen-free packaging Automotive operating temperature– Ambient: –40 C to 105 C Single-level cell (SLC) process technology Density: 1Gb Supply voltage– VCC 2.7–3.6V (program, erase, read)– VCCQ 1.65 - V CC (I/O buffers) Asynchronous random/page read– Page size: 16 words or 32 bytes– Page access: 20ns (VCC V CCQ 2.7-3.6V)– Random access: 105ns (VCC V CCQ 2.7-3.6V)– Random access: 110ns (VCCQ 1.65-VCC) Buffer program (512-word program buffer)– 2.0 MB/s (TYP) when using full buffer program– 2.5 MB/s (TYP) when using accelerated bufferprogram (VHH) Word/Byte program: 25us per word (TYP) Block erase (128KB): 0.2s (TYP) Memory organization– Uniform blocks: 128KB or 64KW each– x8/x16 data bus Program/erase suspend and resume capability– Read from another block during a PROGRAMSUSPEND operation– Read or program another block during an ERASESUSPEND operation Unlock bypass, block erase, chip erase, and write tobuffer capability09005aef85e6c8e4mt28ew 2nd gen 1gb automotive.pdf - Rev. G 05/18 EN1Micron Technology, Inc. reserves the right to change products or specifications without notice. 2014 Micron Technology, Inc. All rights reserved.Products and specifications discussed herein are subject to change by Micron without notice.

1Gb: x16, 3V, MT28EW Automotive Parallel NOR FlashFeaturesPart Numbering InformationFor available options, such as packages or high/low protection, or for further information, contact your Micronsales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison bydevice type is available at www.micron.com/products. Contact the factory for devices not found.Figure 1: Part Number ChartMT 28EW512ABA1HJS- 0AATESProduction StatusBlank ProductionES Engineering sampleMicron TechnologyPart Family28E Embedded Parallel NOROperating TemperatureAT –40 C to 105 C(Grade 2 AEC-Q100)VoltageW 2.7–3.6V VCC coreDensity128 128Mb256 256Mb512 512Mb01G 1Gb02G 2GbSpecial OptionsA Automotive qualityStackA Single dieB Two diePackage CodesJS 56-pin TSOP, 14mm x 20mmPC 64-ball LBGA, 11mm x 13mm(All packages are lead-free, halogen-free,RoHS-compliant)Security Features0 Standard default security1 OTP configurableDevice generationB Second generationBlock StructureH High lockL Low lockDie RevisionA Rev AConfiguration1 x8, x1609005aef85e6c8e4mt28ew 2nd gen 1gb automotive.pdf - Rev. G 05/18 EN2Micron Technology, Inc. reserves the right to change products or specifications without notice. 2014 Micron Technology, Inc. All rights reserved.

1Gb: x16, 3V, MT28EW Automotive Parallel NOR FlashFeaturesContentsImportant Notes and Warnings . 7General Description . 8Signal Assignments . 9Signal Descriptions . 11Memory Organization . 13Memory Configuration . 13Memory Map . 13Bus Operations . 14Read . 14Write . 14Standby . 15Output Disable . 15Reset . 15Registers . 16Data Polling Register . 16Lock Register . 21Standard Command Definitions – Address-Data Cycles . 23READ and AUTO SELECT Operations . 26READ/RESET Command . 26READ CFI Command . 26AUTO SELECT Command . 26Read Electronic Signature . 27Cyclic Redundancy Check Operation . 28CYCLIC REDUNDANCY CHECK Command . 28Cyclic Redundancy Check Operation Command Sequence . 28Bypass Operations . 31UNLOCK BYPASS Command . 31UNLOCK BYPASS RESET Command . 31Program Operations . 32PROGRAM Command . 32UNLOCK BYPASS PROGRAM Command . 32WRITE TO BUFFER PROGRAM Command . 32UNLOCK BYPASS WRITE TO BUFFER PROGRAM Command . 35WRITE TO BUFFER PROGRAM CONFIRM Command . 35BUFFERED PROGRAM ABORT AND RESET Command . 35PROGRAM SUSPEND Command . 35PROGRAM RESUME Command . 36ACCELERATED BUFFERED PROGRAM Operations . 36Erase Operations . 37CHIP ERASE Command . 37UNLOCK BYPASS CHIP ERASE Command . 37BLOCK ERASE Command . 37UNLOCK BYPASS BLOCK ERASE Command . 38ERASE SUSPEND Command . 38ERASE RESUME Command . 39ACCELERATED CHIP ERASE Operations . 39BLANK CHECK Operation . 40BLANK CHECK Commands . 40Device Protection . 41Hardware Protection . 4109005aef85e6c8e4mt28ew 2nd gen 1gb automotive.pdf - Rev. G 05/18 EN3Micron Technology, Inc. reserves the right to change products or specifications without notice. 2014 Micron Technology, Inc. All rights reserved.

1Gb: x16, 3V, MT28EW Automotive Parallel NOR FlashFeaturesSoftware Protection .Volatile Protection Mode .Nonvolatile Protection Mode .Password Protection Mode .Block Protection Command Definitions – Address-Data Cycles .Protection Operations .LOCK REGISTER Commands .PASSWORD PROTECTION Commands .NONVOLATILE PROTECTION Commands .NONVOLATILE PROTECTION BIT LOCK BIT Commands .VOLATILE PROTECTION Commands .EXTENDED MEMORY BLOCK Commands .EXIT PROTECTION Command .Common Flash Interface .Power-Up and Reset Characteristics .Absolute Ratings and Operating Conditions .DC Characteristics .Read AC Characteristics .Write AC Characteristics .Data Polling/Toggle AC Characteristics .Program/Erase Characteristics .Package Dimensions .Revision History .Rev. G –05/18 .Rev. F – 11/16 .Rev. E – 06/16 .Rev. D – 09/15 .Rev. C – 01/15 .Rev. B – 12/14 .Rev. A – 09/14 .09005aef85e6c8e4mt28ew 2nd gen 1gb automotive.pdf - Rev. G 05/18 9797979797979Micron Technology, Inc. reserves the right to change products or specifications without notice. 2014 Micron Technology, Inc. All rights reserved.

1Gb: x16, 3V, MT28EW Automotive Parallel NOR FlashFeaturesList of FiguresFigure 1: Part Number Chart . 2Figure 2: Logic Diagram . 8Figure 3: 56-Pin TSOP (Top View) . 9Figure 4: 64-Ball LBGA (Top View – Balls Down) . 10Figure 5: Data Polling Flowchart . 18Figure 6: Toggle Bit Flowchart . 19Figure 7: Data Polling/Toggle Bit Flowchart . 20Figure 8: Lock Register Program Flowchart . 22Figure 9: Boundary Condition of Program Buffer Size . 33Figure 10: WRITE TO BUFFER PROGRAM Flowchart . 34Figure 11: Software Protection Scheme . 43Figure 12: Set/Clear Nonvolatile Protection Bit Algorithm Flowchart . 49Figure 13: Power-Up Timing . 56Figure 14: Reset AC Timing – No PROGRAM/ERASE Operation in Progress . 57Figure 15: Reset AC Timing During PROGRAM/ERASE Operation . 57Figure 16: AC Measurement Load Circuit . 59Figure 17: AC Measurement I/O Waveform . 59Figure 18: Random Read AC Timing (8-Bit Mode) . 63Figure 19: Random Read AC Timing (16-Bit Mode) . 64Figure 20: BYTE# Transition Read AC Timing . 64Figure 21: Page Read AC Timing (16-Bit Mode) . 65Figure 22: WE#-Controlled Program AC Timing (8-Bit Mode) . 67Figure 23: WE#-Controlled Program AC Timing (16-Bit Mode) . 68Figure 24: CE#-Controlled Program AC Timing (8-Bit Mode) . 70Figure 25: CE#-Controlled Program AC Timing (16-Bit Mode) . 71Figure 26: Chip/Block Erase AC Timing (16-Bit Mode) . 72Figure 27: Accelerated Program AC Timing . 72Figure 28: Data Polling AC Timing . 73Figure 29: Toggle/Alternative Toggle Bit Polling AC Timing . 74Figure 30: 56-Pin TSOP – 14mm x 20mm (Package Code: JS) . 77Figure 31: 64-Ball LBGA – 11mm x 13mm (Package Code: PC) . 7809005aef85e6c8e4mt28ew 2nd gen 1gb automotive.pdf - Rev. G 05/18 EN5Micron Technology, Inc. reserves the right to change products or specifications without notice. 2014 Micron Technology, Inc. All rights reserved.

1Gb: x16, 3V, MT28EW Automotive Parallel NOR FlashFeaturesList of TablesTable 1: Signal Descriptions .Table 2: Blocks[1023:0] .Table 3: Bus Operations .Table 4: Data Polling Register Bit Definitions .Table 5: Operations and Corresponding Bit Settings .Table 6: Lock Register Bit Definitions .Table 7: Standard Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit .Table 8: Block Protection .Table 9: Read Electronic Signature – 1Gb .Table 10: Command Sequence – Range of Blocks .Table 11: Command Sequence – Entire Chip .Table 12: ACCELERATED PROGRAM Requirements and Recommendations .Table 13: ACCELERATED CHIP ERASE Requirements and Recommendations .Table 14: V PP/WP# Functions .Table 15: Block Protection Status .Table 16: Block Protection Command Definitions – Address-Data Cycles, 8-Bit and 16-Bit .Table 17: Extended Memory Block Address and Data .Table 18: Query Structure Overview .Table 19: CFI Query Identification String .Table 20: CFI Query System Interface Information .Table 21: Device Geometry Definition .Table 22: Primary Algorithm-Specific Extended Query Table .Table 23: Power-Up Specifications .Table 24: Reset AC Specifications .Table 25: Absolute Maximum/Minimum Ratings .Table 26: Operating Conditions .Table 27: Input/Output Capacitance .Table 28: DC Current Characteristics .Table 29: DC Voltage Characteristics .Table 30: Read AC Characteristics – V CC V CCQ 2.7-3.6V .Table 31: Read AC Characteristics – V CCQ 1.65V-VCC .Table 32: WE#-Controlled Write AC Characteristics .Table 33: CE#-Controlled Write AC Characteristics .Table 34: Data Polling/Toggle AC Characteristics .Table 35: Program/Erase Characteristics .09005aef85e6c8e4mt28ew 2nd gen 1gb automotive.pdf - Rev. G 05/18 75858596061626266697375Micron Technology, Inc. reserves the right to change products or specifications without notice. 2014 Micron Technology, Inc. All rights reserved.

1Gb: x16, 3V, MT28EW Automotive Parallel NOR FlashImportant Notes and WarningsImportant Notes and WarningsMicron Technology, Inc. ("Micron") reserves the right to make changes to information published in this document,including without limitation specifications and product descriptions. This document supersedes and replaces allinformation supplied prior to the publication hereof. You may not rely on any information set forth in this document if you obtain the product described herein from any unauthorized distributor or other source not authorizedby Micron.Automotive Applications. Products are not designed or intended for use in automotive applications unless specifically designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distributor shall assume the sole risk and liability for and shall indemnify and hold Micron harmless against all claims,costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim ofproduct liability, personal injury, death, or property damage resulting directly or indirectly from any use of nonautomotive-grade products in automotive applications. Customer/distributor shall ensure that the terms and conditions of sale between customer/distributor and any customer of distributor/customer (1) state that Micronproducts are not designed or intended for use in automotive applications unless specifically designated by Micronas automotive-grade by their respective data sheets and (2) require such customer of distributor/customer to indemnify and hold Micron harmless against all claims, costs, damages, and expenses and reasonable attorneys'fees arising out of, directly or indirectly, any claim of product liability, personal injury, death, or property damageresulting from any use of non-automotive-grade products in automotive applications.Critical Applications. Products are not authorized for use in applications in which failure of the Micron component could result, directly or indirectly in death, personal injury, or severe property or environmental damage("Critical Applications"). Customer must protect against death, personal injury, and severe property and environmental damage by incorporating safety design measures into customer's applications to ensure that failure of theMicron component will not result in such harms. Should customer or distributor purchase, use, or sell any Microncomponent for any critical application, customer and distributor shall indemnify and hold harmless Micron andits subsidiaries, subcontractors, and affiliates and the directors, officers, and employees of each against all claims,costs, damages, and expenses and reasonable attorneys' fees arising out of, directly or indirectly, any claim ofproduct liability, personal injury, or death arising in any way out of such critical application, whether or not Micron or its subsidiaries, subcontractors, or affiliates were negligent in the design, manufacture, or warning of theMicron product.Customer Responsibility. Customers are responsible for the design, manufacture, and operation of their systems,applications, and products using Micron products. ALL SEMICONDUCTOR PRODUCTS HAVE INHERENT FAILURE RATES AND LIMITED USEFUL LIVES. IT IS THE CUSTOMER'S SOLE RESPONSIBILITY TO DETERMINEWHETHER THE MICRON PRODUCT IS SUITABLE AND FIT FOR THE CUSTOMER'S SYSTEM, APPLICATION, ORPRODUCT. Customers must ensure that adequate design, manufacturing, and operating safeguards are includedin customer's applications and products to eliminate the risk that personal injury, death, or severe property or environmental damages will result from failure of any semiconductor component.Limited Warranty. In no event shall Micron be liable for any indirect, incidental, punitive, special or consequentialdamages (including without limitation lost profits, lost savings, business interruption, costs related to the removalor replacement of any products or rework charges) whether or not such damages are based on tort, warranty,breach of contract or other legal theory, unless explicitly stated in a written agreement executed by Micron's dulyauthorized representative.09005aef85e6c8e4mt28ew 2nd gen 1gb automotive.pdf - Rev. G 05/18 EN7M

Automotive Applications. Products are not designed or intended for use in automotive applications unless specifi-cally designated by Micron as automotive-grade by their respective data sheets. Distributor and customer/distrib-utor shall assume the sole risk and liability for and sha

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