FDC633N N-Channel Enhancement Mode Field Effect Transistor

March 1998FDC633NN-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThis N-Channel enhancement mode power field effecttransistors is produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process istailored to minimize on-state resistance. These devices areparticularly suited for low voltage applications in notebookcomputers, portable phones, PCMICA cards, and otherbattery powered circuits where fast switching,low in-linepower loss and resistance to transients are needed in a verysmall outline surface mount package.SOT-23SuperSOTTM-6SuperSOTTM-85.2 A, 30 V. RDS(ON) 0.042 Ω @ VGS 4.5 VRDS(ON) 0.054 Ω @ VGS 2.5 V.SuperSOTTM-6 package design using copper lead frame forsuperior thermal and electrical capabilities.High density cell design for extremely low RDS(ON).Exceptional on-resistance and maximum DC SuperSOTTMpin 1-6DDAbsolute Maximum Ratings T A 25 C unless otherwise notedSymbol ParameterVDSSDrain-Source VoltageVGSSGate-Source Voltage - ContinuousIDDrain Current - ContinuousPDMaximum Power DissipationUnits30V 8V(Note 1a)5.2A(Note 1a)1.6(Note 1b)0.8- PulsedTJ,TSTGFDC633N16Operating and Storage Temperature RangeW-55 to 150 CTHERMAL CHARACTERISTICSRθJAThermal Resistance, Junction-to-Ambient(Note 1a)78 C/WRθJCThermal Resistance, Junction-to-Case(Note 1)30 C/W 1998 Fairchild Semiconductor CorporationFDC633N Rev.C

ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise noted)SymbolParameterConditionsMinTypMaxUnitsOFF CHARACTERISTICSBVDSSDrain-Source Breakdown VoltageVGS 0 V, ID 250 µA BVDSS/ TJBreakdown Voltage Temp. CoefficientID 250 µA, Referenced to 25 oC30IDSSZero Gate Voltage Drain CurrentVDS 24 V, VGS 0 VVmV/oC42o1µA10µAIGSSFGate - Body Leakage, ForwardVGS 8 V, VDS 0 V100nAIGSSRGate - Body Leakage, ReverseVGS -8 V, VDS 0 V-100nA1VTJ 55 CON CHARACTERISTICS (Note 2)VGS(th)Gate Threshold Voltage0.4VDS VGS, ID 250 µA VGS(th)/ TJGate Threshold VoltageTemp.CoefficientID 250 µA, Referenced to 25 CRDS(ON)Static Drain-Source On-ResistanceVGS 4.5 V, ID 5.2 Ao0.67mV/oC-2.4oTJ 125 CVGS 2.5 V, ID 4.5 A0.0330.0420.0510.070.0430.05411ΩID(on)On-State Drain CurrentVGS 4.5 V, VDS 5 VgFSForward TransconductanceVDS 10 V, ID 5.2 A15ASDYNAMIC CHARACTERISTICSCissInput CapacitanceVDS 10 V, VGS 0 V,538pFCossOutput Capacitancef 1.0 MHz226pFCrssReverse Transfer Capacitance51pFSWITCHING CHARACTERISTICS (Note 2)tD(on)Turn - On Delay TimeVDD 5 V, ID 1 A,512nstrTurn - On Rise TimeVGS 4.5 V, RGEN 6 Ω1727nstD(off)Turn - Off Delay Time2540nstfTurn - Off Fall TimeQgTotal Gate ChargeVDS 10 V, ID 5.2 A,QgsGate-Source ChargeVGS 4.5 VQgdGate-Drain Charge5.311ns1116nC2nC2.4nCDRAIN-SOURCE DIODE CHARACTERISTICSISContinuous Source Diode CurrentVSDDrain-Source Diode Forward VoltageVGS 0 V, IS 1.3 A(Note 2)oTJ 125 C1.3A0.71.2V0.571Notes:1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed bydesign while RθCA is determined by the user's board design.a. 78oC/W when mounted on a 1 in2 pad of 2oz Cu on FR-4 board.b. 156oC/W when mounted on a minimum pad of 2oz Cu on FR-4 board.2. Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%.FDC633N Rev.C

Typical Electrical Characteristics2.5R DS(ON), NORMALIZEDI D , DRAIN-SOURCE CURRENT (A)VGS 4.5V3.0152.01051.50DRAIN-SOURCE .80V GS 2.0V1.630510I D , DRAIN CURRENT (A)VDS , DRAIN-SOURCE VOLTAGE (V)0.15R DS(ON) , ON-RESISTANCE (OHM)I D 5.2AV GS 4.5V1.41.210.8I D 2.5A0.120.09TA 125 C0.060.03TA 25 C00.6-501-250255075100TJ , JUNCTION TEMPERATURE ( C)125GSFigure 3. On-Resistance Variationwith Temperature.15TJ -55 CVDS 5V25 C12125 C9630.51VGS1.52, GATE TO SOURCE VOLTAGE (V)Figure 5. Transfer Characteristics.452.5VGS 0VTJ 125 C125 C0.1-55 C0.010.0010.000103, GATE TO SOURCE VOLTAGE (V)Figure 4. On-Resistance Variation withGate-to-Source Voltage.1502V150I S , REVERSE DRAIN CURRENT (A)R DS(ON) , NORMALIZED1.6DRAIN-SOURCE ON-RESISTANCE20Figure 2. On-Resistance Variation withDrain Current and Gate Voltage.Figure 1. On-Region Characteristics.I D, DRAIN CURRENT (A)1500.20.40.60.811.2VSD , BODY DIODE FORWARD VOLTAGE (V)Figure 6. Body Diode Forward VoltageVariation with Source Currentand Temperature.FDC633N Rev.C

Typical Electrical Characteristics (continued)1300I D 5.2AVDS 5V10V460015VCAPACITANCE (pF)V GS , GATE-SOURCE VOLTAGE (V)532300Coss1001500036912Crssf 1 MHzVGS 0 V200.115Q g , GATE CHARGE (nC)0.3131030VDS , DRAIN TO SOURCE VOLTAGE (V)Figure 7. Gate Charge Characteristics.Figure 8. Capacitance Characteristics.405100MIT) LI(ONSRD105us1ms10ms100ms210.51sVGS 4.5VSINGLE PULSERθJA See Note 1bTA A 25 C0.10.050.010.10.20.5SINGLE PULSERθJA See note 1bTA 25 C4POWER (W)2032DC100.0112510300.150110100300SINGLE PULSE TIME (SEC)V DS , DRAIN-SOURCE VOLTAGE (V)Figure 9. Maximum Safe Operating Area.Figure 10. Single Pulse Maximum PowerDissipation.TRANSIENT THERMAL RESISTANCE1r(t), NORMALIZED EFFECTIVEI D , DRAIN CURRENT (A)Ciss0.5D 0.50.20.10.05R JA (t) r(t) * R θJAθR See Note 1bθJA0.20.1P(pk)0.05t10.020.020.01t2TJ - TA P * R θJA (t)0.01Duty Cycle, D t 1/ t 2Single Pulse0.0050.000010.00010.0010.010.1110100300t 1, TIME (sec)Figure 11. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design.FDC633N Rev.C

TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTMEnSignaTMFACT FACT Quiet Series FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START STAR*POWER Stealth SuperSOT -3SuperSOT -6SuperSOT -8SyncFET TinyLogic TruTranslation UHC UltraFET VCX STAR*POWER is used under licenseDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or2. A critical component is any component of a lifesystems which, (a) are intended for surgical implant intosupport device or system whose failure to perform canthe body, or (b) support or sustain life, or (c) whosebe reasonably expected to cause the failure of the lifefailure to perform when properly used in accordancesupport device or system, or to affect its safety orwith instructions for use provided in the labeling, can beeffectiveness.reasonably expected to result in significant injury to theuser.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative orIn DesignThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification NeededFull ProductionThis datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.ObsoleteNot In ProductionThis datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. H4

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for re