MRF6S9125MR1 RF Power Field Effect Transistors .

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Freescale SemiconductorTechnical DataDocument Number: MRF6S9125Rev. 2, 2/2006Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes withthis part replacement. N suffix added to part number to indicate transition to lead - freeterminations.MRF6S9125MR1MRF6S9125MBR1RF Power Field Effect TransistorsN - Channel Enhancement - Mode Lateral MOSFETs880 MHz, 27 W AVG., 28 VSINGLE N - CDMALATERAL N - CHANNELRF POWER MOSFETsN - CDMA Application Typical Single - Carrier N - CDMA Performance: VDD 28 Volts, IDQ 950 mA, Pout 27 Watt Avg., Full Frequency Band (865 - 895 MHz), IS - 95CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) ChannelBandwidth 1.2288 MHz. PAR 9.8 dB @ 0.01% Probability on CCDF.Power Gain — 20.2 dBDrain Efficiency — 31%ACPR @ 750 kHz Offset - 47.1 dBc @ 30 kHz BandwidthGSM EDGE Application Typical GSM EDGE Performance: VDD 28 Volts, IDQ 700 mA,Pout 60 Watts Avg., Full Frequency Band (865 - 895 MHz or921 - 960 MHz)Power Gain — 20 dBDrain Efficiency — 40% (Typ)Spectral Regrowth @ 400 kHz Offset - 63 dBcSpectral Regrowth @ 600 kHz Offset - 78 dBcEVM — 1.5% rmsGSM Application Typical GSM Performance: VDD 28 Volts, IDQ 700 mA, Pout 125 Watts, Full Frequency Band (921 - 960 MHz)Power Gain — 19 dBDrain Efficiency — 62% Capable of Handling 10:1 VSWR, @ 28 Vdc, @ P1dB Output Power,@ f 880 MHz Characterized with Series Equivalent Large - Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 VDD Operation Integrated ESD Protection 200 C Capable Plastic Package In Tape and Reel. R1 Suffix 500 Units per 44 mm, 13 inch Reel.ARCHIVE INFORMATIONARCHIVE INFORMATIONDesigned for broadband commercial and industrial applications withfrequencies up to 1000 MHz. The high gain and broadband performance ofthese devices make them ideal for large - signal, common - source amplifierapplications in 28 volt base station equipment.CASE 1486 - 03, STYLE 1TO - 270 WB - 4PLASTICMRF6S9125MR1CASE 1484 - 03, STYLE 1TO - 272 WB - 4PLASTICMRF6S9125MBR1Table 1. Maximum RatingsRatingSymbolValueUnitDrain- Source VoltageVDSS- 0.5, 68VdcGate- Source VoltageVGS- 0.5, 12VdcTotal Device Dissipation @ TC 25 CDerate above 25 CPD3982.3WW/ CStorage Temperature RangeTstg- 65 to 150 COperating Junction TemperatureTJ200 CNOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling andpackaging MOS devices should be observed. Freescale Semiconductor, Inc., 2006. All rights reserved.RF Device DataFreescale SemiconductorMRF6S9125MR1 MRF6S9125MBR11

Table 2. Thermal CharacteristicsCharacteristicValue(1)SymbolThermal Resistance, Junction to CaseCase Temperature 80 C, 125 W CWCase Temperature 76 C, 27 W CWRθJCUnit C/W0.440.45Table 3. ESD Protection CharacteristicsTest MethodologyClassHuman Body Model (per JESD22 - A114)1B (Minimum)Machine Model (per EIA/JESD22 - A115)C (Minimum)Charge Device Model (per JESD22 - C101)IV (Minimum)ARCHIVE INFORMATIONTest MethodologyPer JESD 22 - A113, IPC/JEDEC J - STD - 020RatingPackage Peak TemperatureUnit3260 CTable 5. Electrical Characteristics (TC 25 C unless otherwise noted)SymbolMinTypMaxUnitZero Gate Voltage Drain Leakage Current(VDS 68 Vdc, VGS 0 Vdc)IDSS——10µAdcZero Gate Voltage Drain Leakage Current(VDS 28 Vdc, VGS 0 Vdc)IDSS——1µAdcGate- Source Leakage Current(VGS 5 Vdc, VDS 0 Vdc)IGSS——1µAdcGate Threshold Voltage(VDS 10 Vdc, ID 400 µAdc)VGS(th)12.13VdcGate Quiescent Voltage(VDS 28 Vdc, ID 950 mAdc)VGS(Q)22.894VdcDrain- Source On - Voltage(VGS 10 Vdc, ID 2.74 Adc)VDS(on)0.050.230.3Vdcgfs—6—SOutput Capacitance(VDS 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS 0 Vdc)Coss—60—pFReverse Transfer Capacitance(VDS 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS 0 Vdc)Crss—2—pF24dBCharacteristicOff CharacteristicsOn CharacteristicsForward Transconductance(VDS 10 Vdc, ID 8 Adc)Dynamic Characteristics (2)Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD 28 Vdc, IDQ 950 mA, Pout 27 W, f 880 MHzPower GainDrain EfficiencyAdjacent Channel Power RatioInput Return LossGps1920.2ηD2931—%ACPR—- 47.1- 45dBcIRL—- 16-9dBARCHIVE INFORMATIONTable 4. Moisture Sensitivity Level1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.Select Documentation/Application Notes - AN1955.2. Part is internally input matched.(continued)MRF6S9125MR1 MRF6S9125MBR12RF Device DataFreescale Semiconductor

Table 5. Electrical Characteristics (TC 25 C unless otherwise noted) l GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) VDD 28 Vdc, IDQ 950 mA,Pout 60 W Avg., 921 MHz Frequency 960 MHzPower GainGps—20—dBDrain EfficiencyηD—40—%Error Vector MagnitudeEVM—1.5—% rmsSpectral Regrowth at 400 kHz OffsetSR1—- 63—dBcSpectral Regrowth at 600 kHz OffsetSR2—- 78—dBcTypical CW Performances (In Freescale GSM Test Fixture, 50 οhm system) VDD 28 Vdc, IDQ 700 mA, Pout 125 W,921 MHz Frequency 960 MHz—Drain EfficiencyηDInput Return LossIRLP1dBARCHIVE INFORMATIONPout @ 1 dB Compression Point, CW(f 880 MHz)19—dB—62—%—- 12—dB—125—WARCHIVE INFORMATIONGpsPower GainMRF6S9125MR1 MRF6S9125MBR1RF Device DataFreescale Semiconductor3

R1VBIAS C10 3Z14Z15Z16C13C14C15C16Z8C1C23RFZ17 OUTPUTC17DUTC3C2ARCHIVE INFORMATION L2L1Z1C19 Z1, Z17Z2Z3Z4Z5Z6Z7Z8Z9C50.200″ x 0.080″ Microstrip1.060″ x 0.080″ Microstrip0.382″ x 0.220″ Microstrip0.108″ x 0.220″ Microstrip0.200″ x 0.420″ x 0.620″ Taper0.028″ x 0.620″ Microstrip0.236″ x 0.620″ Microstrip0.050″ x 0.620″ Microstrip0.238″ x 0.620″ MicrostripZ10Z11Z12Z13Z14Z15Z16PCB0.057″ x 0.620″ Microstrip0.119″ x 0.620″ Microstrip0.450″ x 0.220″ Microstrip0.061″ x 0.220″ Microstrip0.078″ x 0.220″ Microstrip0.692″ x 0.080″ Microstrip0.368″ x 0.080″ MicrostripArlon GX - 0300- 55- 22, 0.030″, εr 2.55Figure 1. MRF6S9125MR1(MBR1) Test Circuit SchematicTable 6. MRF6S9125MR1(MBR1) Test Circuit Component Designations and ValuesPartDescriptionPart NumberManufacturerC120 pF Chip Capacitor600B200FT250XTATCC26.2 pF Chip Capacitor600B6R2BT250XTATCC3, C150.8- 8.0 pF Variable Capacitors, Gigatrim27291SLJohansonC4, C511 pF Chip Capacitors600B110FT250XTATCC6, C18, C190.56 µF, 50 V Chip CapacitorsC1825C564J5RACKemetC7, C847 µF, 16 V Tantalum Capacitors593D476X9016D2TVishayC9, C2347 pF Chip Capacitors700B470FW500XTATCC10100 µF, 50 V Electrolytic Capacitor515D107M050BB6AVishayC11, C1212 pF Chip Capacitors600B120FT250XTATCC13, C145.1 pF Chip Capacitors600B5R1BT250XTATCC160.3 pF Chip Capacitor700B0R3BW500XTATCC1739 pF Chip Capacitor700B390FW500XTATCC20, C2122 µF, 35 V Tantalum CapacitorsT491X226K035ASKemetC22470 µF, 63 V Electrolytic CapacitorSME63V471M12X25LLUnited Chemi - ConL17.15 nH Inductor1606- 7JCoilCraftL28.0 nH InductorA03TCoilCraftR115 Ω, 1/4 W Chip Resistor (1210)Dale/VishayR2560 kΩ, 1/8 W Resistor (1206)Dale/VishayARCHIVE INFORMATIONRFINPUTC9C18 VSUPPLY MRF6S9125MR1 MRF6S9125MBR14RF Device DataFreescale Semiconductor

C20 C21C8 C7C22C9C10C6R2C4R1C23C18C11C14C1C17C2C5C3CUT OUT AREAL2L1ARCHIVE INFORMATIONVDDC19C13C15C16C12900 MHzTO272 WBRev. 0Figure 2. MRF6S9125MR1(MBR1) Test Circuit Component LayoutARCHIVE INFORMATIONVGGMRF6S9125MR1 MRF6S9125MBR1RF Device DataFreescale Semiconductor5

ηDGps, POWER GAIN (dB)2030VDD 28 Vdc, Pout 27 W (Avg.)IDQ 950 mA, N CDMA IS 95 PilotSync, Paging, Traffic Codes 8 Through 1319.819.528 30IRL19.3ACPR19 40 5018.8 60ALT1 70910850860870880900890 10 15 20 25f, FREQUENCY (MHz)48Gps, POWER GAIN (dB)19.419.2ηD44VDD 28 Vdc, Pout 62.5 W (Avg.)IDQ 950 mA, N CDMA IS 95 PilotSync, Paging, Traffic Codes 8 Through 131918.840 30ACPR18.6IRL18.4 50ALT118.218850860870880 40890900 60 70910 5 10 15 20 25IRL, INPUT RETURN LOSS (dB)52GpsACPR (dBc), ALT1 (dBc)19.6ηD, DRAINEFFICIENCY (%)Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout 27 Watts Avg.f, FREQUENCY (MHz)Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout 62.5 Watts Avg.22 10IMD, THIRD ORDERINTERMODULATION DISTORTION (dBc)IDQ 1475 mA21Gps, POWER GAIN (dB)ARCHIVE INFORMATION18.5 5ARCHIVE INFORMATION32GpsIRL, INPUT RETURN LOSS (dB)20.3ACPR (dBc), ALT1 (dBc)3420.5ηD, DRAINEFFICIENCY (%)TYPICAL CHARACTERISTICS1187 mA20950 mA712 mA19475 mA1817VDD 28 Vdc, f1 880 MHz, f2 880.1 MHzTwo Tone Measurements, 100 MHz Tone SpacingVDD 28 Vdcf1 880 MHz, f2 880.1 MHzTwo Tone Measurements, 100 MHz Tone Spacing 20IDQ 1425 mA 30712 mA475 mA 40 501187 mA950 mA 6016110100Pout, OUTPUT POWER (WATTS) PEPFigure 5. Two - Tone Power Gain versusOutput Power300110100300Pout, OUTPUT POWER (WATTS) PEPFigure 6. Third Order Intermodulation Distortionversus Output PowerMRF6S9125MR1 MRF6S9125MBR16RF Device DataFreescale Semiconductor

VDD 28 Vdc, IDQ 950 mAf1 880 MHz, f2 880.1 MHzTwo Tone Measurements, Center Frequency 880 MHz 20 30 403rd Order 505th Order 607th Order 70101100 10VDD 28 Vdc, Pout 125 W (PEP)IDQ 950 mA, Two Tone MeasurementsCenter Frequency 880 MHz 203rd Order 305th Order 40 507th Order 600.1300110Pout, OUTPUT POWER (WATTS) PEPTWO TONE SPACING (MHz)Figure 7. Intermodulation Distortion Productsversus Output PowerFigure 8. Intermodulation Distortion Productsversus Tone Spacing56Pout, OUTPUT POWER (dBm)IdealP3dB 52.4 dBm (172.5 W)555453P1dB 51.5 dBm (139.3 W)Actual525150VDD 28 Vdc, IDQ 950 mAPulsed CW, 8 µsec(on), 1 msec(off)Center Frequency 880 MHz4948282930313233343536Pin, INPUT POWER (dBm)50VDD 28 Vdc, IDQ 950 mAf 880 MHz, N CDMA IS 95 (Pilot40 Sync, Paging, Traffic Codes 8Through 13) 30TC 30 C25 CηDALT130 50 30 C25 C85 CGps2025 C 30 C 7085 C00.11 60ACPR25 C10 4085 C10100 80200ACPR, ADJACENT CHANNEL POWER RATIO (dBc)ALT1, CHANNEL POWER (dBc)Figure 9. Pulse CW Output Power versusInput Power100ARCHIVE INFORMATIONIMD, INTERMODULATION DISTORTION (dBc) 10ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)ARCHIVE INFORMATIONIMD, INTERMODULATION DISTORTION (dBc)TYPICAL CHARACTERISTICSPout, OUTPUT POWER (WATTS) AVG.Figure 10. Single - Carrier N - CDMA ACPR, ALT1, PowerGain and Drain Efficiency versus Output PowerMRF6S9125MR1 MRF6S9125MBR1RF Device DataFreescale Semiconductor7

TYPICAL CHARACTERISTICS22TC 30 C25 C4085 C19ηD1830Gps1725 C16VDD 28 VdcIDQ 950 mAf 880 MHz85 C1511010020201932 V1828 V24 V1716 V10020020 VIDQ 950 mAf 880 MHzVDD 12 V16500100150200Pout, OUTPUT POWER (WATTS) CWPout, OUTPUT POWER (WATTS) CWFigure 11. Power Gain and Drain Efficiencyversus CW Output PowerFigure 12. Power Gain versus Output PowerMTTF FACTOR (HOURS X AMPS2)10910810790 100 110 120 130 140 150 160 170 180 190 200 210TJ, JUNCTION TEMPERATURE ( C)This above graph displays calculated MTTF in hours x ampere2drain current. Life tests at elevated temperatures have correlated tobetter than 10% of the theoretical prediction for metal failure. DivideMTTF factor by ID2 for MTTF in a particular application.Figure 13. MTTF Factor versus Junction Temperature250ARCHIVE INFORMATION50Gps, POWER GAIN (dB)2060ηD, DRAIN EFFICIENCY (%)Gps, POWER GAIN (dB)21ARCHIVE INFORMATION2170 30 CMRF6S9125MR1 MRF6S9125MBR18RF Device DataFreescale Semiconductor

N - CDMA TEST SIGNAL 101001.2288 MHzChannel BW 20 301 40 500.1IS 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8Through 13) 1.2288 MHz Channel BandwidthCarriers. ACPR Measured in 30 kHz Bandwidth @ 750 kHz Offset. PAR 9.8 dB @ 0.01%Probability on CCDF. 60 70 80 ACPR @ 30 kHzIntegrated BW 900.00010246810 ACPR @ 30 kHzIntegrated BW 100PEAK TO AVERAGE (dB)Figure 14. Single - Carrier CCDF N - CDMA 110 3.6 2.9 2.2 1.5 0.700.71.52.22.9f, FREQUENCY (MHz)Figure 15. Single - Carrier N - CDMA Spectrum3.6ARCHIVE INFORMATION0.010.001ARCHIVE INFORMATION(dB)PROBABILITY (%)10MRF6S9125MR1 MRF6S9125MBR1RF Device DataFreescale Semiconductor9

f 900 MHzZloadf 860 MHzZsourcef 900 MHzf 860 MHzVDD 28 Vdc, IDQ 950 mA, Pout 27 W Avg.fMHzZsourceΩZloadΩ8600.62 - j2.131.48 - j0.148650.64 - j2.311.56 - j0.098700.62 - j2.451.66 - j0.028750.59 - j2.431.73 j0.048800.57 - j2.421.74 j0.118850.54 - j2.361.68 j0.198900.57 - j2.181.61 j0.258950.58 - j1.941.52 j0.339000.59 - j1.861.48 j0.37ARCHIVE INFORMATIONARCHIVE INFORMATIONZo 5 ΩZsource Test circuit impedance as measured fromgate to ground.Zload Test circuit impedance as measuredfrom drain to tchingNetworkZsourceZloadFigure 16. Series Equivalent Source and Load ImpedanceMRF6S9125MR1 MRF6S9125MBR110RF Device DataFreescale Semiconductor

NOTESMRF6S9125MR1 MRF6S9125MBR1RF Device DataFreescale Semiconductor11

PACKAGE DIMENSIONSE1BA2XE3GATE LEADDRAIN LEADDD14Xe4Xaaab1C AM2X2XD2c1EHDATUMPLANEFZONE JAA12XA2E2NOTE �ÇÇÇÇÇÇÇE5BOTTOM VIEWCSEATINGPLANEPIN 5NOTE 812CASE 1486 - 03ISSUE CTO - 270 WB - 4PLASTICMRF6S9125MR1NOTES:1. CONTROLLING DIMENSION: INCH.2. INTERPRET DIMENSIONS AND TOLERANCESPER ASME Y14.5M 1994.3. DATUM PLANE H IS LOCATED AT THE TOP OFLEAD AND IS COINCIDENT WITH THE LEADWHERE THE LEAD EXITS THE PLASTIC BODY ATTHE TOP OF THE PARTING LINE.4. DIMENSIONS “D" AND “E1" DO NOT INCLUDEMOLD PROTRUSION. ALLOWABLE PROTRUSIONIS .006 PER SIDE. DIMENSIONS “D" AND “E1" DOINCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE H .5. DIMENSION “b1" DOES NOT INCLUDE DAMBARPROTRUSION. ALLOWABLE DAMBARPROTRUSION SHALL BE .005 TOTAL IN EXCESSOF THE “b1" DIMENSION AT MAXIMUM MATERIALCONDITION.6. DATUMS A AND B TO BE DETERMINED ATDATUM PLANE H .7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY.8. HATCHING REPRESENTS THE EXPOSED AREAOF THE HEAT .600 .551.559.353.357.132.140.124.132.270 .346.350.025 BSC.164.170.007.011.106 BSC.004STYLE 1:PIN 718.0818.2917.4817.580.280.4815.24 1414.28.979.073.353.563.153.356.86 8.798.890.64 BSC4.174.320.180.282.69 BSC0.10DRAINDRAINGATEGATESOURCEMRF6S9125MR1 MRF6S9125MBR112RF Device DataFreescale Semiconductor

MRF6S9125MR1 MRF6S9125MBR1RF Device DataFreescale Semiconductor13

MRF6S9125MR1 MRF6S9125MBR114RF Device DataFreescale Semiconductor

MRF6S9125MR1 MRF6S9125MBR1RF Device DataFreescale Semiconductor15

How to Reach Us:Home Page:www.freescale.comE - mail:support@freescale.comUSA/Europe or Locations Not Listed:Freescale SemiconductorTechnical Information Center, CH3701300 N. Alma School RoadChandler, Arizona 85224 1 - 800- 521- 6274 or 1 - 480- 768- 2130support@freescale.comEurope, Middle East, and Africa:Freescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen, Germany 44 1296 380 456 (English) 46 8 52200080 (English) 49 89 92103 559 (German) 33 1 69 35 48 48 (French)support@freescale.comJapan:Freescale Semiconductor Japan Ltd.HeadquartersARCO Tower 15F1 - 8 - 1, Shimo - Meguro, Meguro - ku,Tokyo 153 - 0064Japan0120 191014 or 81 3 5437 ale Semiconductor Hong Kong Ltd.Technical Information Center2 Dai King StreetTai Po Industrial EstateTai Po, N.T., Hong Kong 800 2666 8080support.asia@freescale.comFor Literature Requests Only:Freescale Semiconductor Literature Distribution CenterP.O. Box 5405Denver, Colorado 802171 - 800- 441- 2447 or 303 - 675- 2140Fax: 303 - 675- nformation in this document is provided solely to enable system and softwareimplementers to use Freescale Semiconductor products. There are no express orimplied copyright licenses granted hereunder to design or fabricate any integratedcircuits or integrated circuits based on the information in this document.Freescale Semiconductor reserves the right to make changes without further notice toany products herein. Freescale Semiconductor makes no warranty, representation orguarantee regarding the suitability of its products for any particular purpose, nor doesFreescale Semiconductor assume any liability arising out of the application or use ofany product or circuit, and specifically disclaims any and all liability, including withoutlimitation consequential or incidental damages. “Typical” parameters that may beprovided in Freescale Semiconductor data sheets and/or specifications can and dovary in different applications and actual performance may vary over time. All operatingparameters, including “Typicals”, must be validated for each customer application bycustomer’s technical experts. Freescale Semiconductor does not convey any licenseunder its patent rights nor the rights of others. Freescale Semiconductor products arenot designed, intended, or authorized for use as components in systems intended forsurgical implant into the body, or other applications intended to support or sustain life,or for any other application in which the failure of the Freescale Semiconductor productcould create a situation where personal injury or death may occur. Should Buyerpurchase or use Freescale Semiconductor products for any such unintended orunauthorized application, Buyer shall indemnify and hold Freescale Semiconductorand its officers, employees, subsidiaries, affiliates, and distributors harmless against allclaims, costs, damages, and expenses, and reasonable attorney fees arising out of,directly or indirectly, any claim of personal injury or death associated with suchunintended or unauthorized use, even if such claim alleges that FreescaleSemiconductor was negligent regarding the design or manufacture of the part.Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2006. All rights reserved.RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electricalcharacteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For furtherinformation, see http://www.freescale.com or contact your Freescale sales representative.For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp.MRF6S9125MR1 MRF6S9125MBR1Document Number: MRF6S9125Rev. 2, 2/200616RF Device DataFreescale Semiconductor

ps, POWER GAIN (dB) 21 19 1187 mA 950 mA 1 300 VDD 28 Vdc, f1 880 MHz, f2 880.1 MHz Two Tone Measurements, 100 MHz Tone Spacing Figure 6. Third Order Intermodulation Distortion versus Output Power 30 10 1, OUTPUT POWER (WATTS) PEP 10 20 100 60 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 40 50 18.2 40 17 712 mA .

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1 THECONSTITUTION OFTHEREPUBLICOFKOREA Jul.17,1948 Amendedby Jul. 7,1952 Nov.29,1954 Jun.15,1960 Nov.29,1960 Dec.26,1962 Oct.21,1969 Dec.27,1972 Oct.27,1980