News 14 - ABB
news3 14ABB SemiconductorsSeptember 2014HighlightsPage Editorial Jürgen Winterer’s partingwords Welcome Mojmír Balous2Page 3 Application in focus:IGCTs for demandinghigh-power applications Application note:Mounting instructions forHiPaks New technical customersupport engineerRecord performance withIGCTsAs more and more intermittent windand solar power generation capacity isadded to the electricity grid, demanding high-power applications like energy storage are gaining in importance.Pumped storage power plants, such asthose found in the Swiss Alps, areideal partners for the expanding use ofsolar and wind. Storage plants behavelike huge batteries, ensuring the necessary balance between production andconsumption. Therefore, when power isplentiful, water is pumped from a loweraltitude lake to replenish a higheraltitude lake, where it can remain storedfor a long time. When power is needed,water is released, instantly turning turbines as the water falls to rapidly generate electricity. Pumped storage is playing an increasing role in grid regulationand assuring the continuity of supply.ABB has installed the world’s mostpowerful frequency converter for variable speed pumped hydropower application to the Grimsel 2 plant in Switzerland. This plant connects the upperreservoir of the glacier water fed LakeOberaar (2,303 meters above sealevel) to the more than 400 m lowerLake Grimsel.One of the four synchronous generator/motor sets has been upgraded fromfixed speed to variable speed by meansof more than 1,000 IGCTs in ABB’s PCS8000 power converters. Therefore, thesynchronous machine can now operate between 600 and 765 rpm in pumpmode and can thus be controlled morequickly and flexibly according to thesurplus energy and it uses water moreefficiently as a resource for electricityproduction. (ch/bb)Page 4 New qualified products Phased-out products Products in the pipeline Process change notifications LinPakPage 5 Product in focus:Asymmetric 4.5 kV IGCTs Portrait:NIEC-Nihon Inter ElectronicsCorporationPage Technology in focus:HPT Lead time indicator Publications calendar Impressum6
2EditorialGrimsel in the Swiss Alps is a niceplace to escape the hot summer inSwitzerland This is, obviously,not the reason I am mentioningit here, Grimsel is also a placewhere the latest record frequencyconverter from ABB, taking advantage of ABB’s great IGCTs, wasinstalled. More than 1,000 IGCTsmake sure that the pumped storage power plant Grimsel 2 can operate more flexibly and uses watermore efficiently as a resource forelectricity production. Consistentwith the cover story on the pumpedhydro power storage plant Grimsel2 featuring IGCTs, the “Applicationin focus”, “Technology in focus”and “Product in focus” articlesare about demanding high-powerapplications, the latest IGCT technology HPT and the 4.5 kV asymmetric IGCT portfolio on pages 3, 6and 5, respectively.In this issue we also proudly present the LinPak, our latest lowinductance, phase-leg module(page 4) which will feature very highcurrent density, excellent parallelingcapabilities, an integrated temperature sensor and a dedicatedmounting area for a gate driveboard.The application note we summarizein this newsletter is “Mounting instructions for HiPaks” (page 3). Youcan find the full application note aswell as all other 24 ABB applicationnotes on our website at www.abb.com/semiconductors. Go there andtake advantage of this huge collection of high-power semiconductorknow-how!Last but not least, don’t miss toread Jürgen Winterer’sparting words as Local BusinessUnit Manager ABB Semiconductors in Prague and welcome MojmírBalous, his successor (both page2) and Florian Weber, our newTechnical Customer Support Engineer (page 3).Jürgen Winterer’s parting wordsDear customers, dear colleaguesAfter being in the role of the local business unit (LBU)manager Semiconductors for Power Systems in Prague,Czech Republic, for the past 4 years, it’s time for me tomove on. It was an exciting time, starting with the acquisition of a well-established local semiconductor companyand its integration into the big ABB world. And then tolearn about the customers’ needs and products. I hadthe chance to see most of the markets and to personallymeet many interesting and engaged people. Certainly, there have been critical andchallenging moments. Nevertheless, we have been able to overcome those withthe great know-how and dedication of the team in Prague. In the past 4 years Ialso had the chance to make some renovations and investments in the Prague unit,leading to what I believe is a state-of-the-art manufacturing today.I will certainly miss the cooperation, you all and in particular the great team inPrague.I wish you all good luck and great business for the future.Please give your continued support to my successor, Mojmír Balous, who formallytook over as of September 1st. I’m sure he will lead ABB Semiconductors in Pragueto the next level of success!Yours,Jürgen WintererWelcome Mojmír BalousWe are pleased to inform that Mr. Mojmír Balous has beenappointed as LBU Manager Semiconductors for PowerSystems, Czech Republic, succeeding Jürgen Winterer whotook over a new role within ABB. After a transition phasein July and August, he officially took over responsibility inPrague on September 1st.Mojmír Balous holds a master’s degree in Electrical PowerEngineering from the Czech Technical University, Prague,and a Master of Business Administration (MBA) degree fromRochester Institute of Technology, New York. He has more than 15 years of experience in general management and held various top management positions in severalCzech and international technical companies before he joined ABB.Mojmír says: „Reviewing my education and professional career I am coming backto the roots. My first employment was in R&D of power supplies, which also usedpower semiconductors. Although the technology has progressed significantly sincethen, the physical principles remain the same and I’m looking forward to my newtask!”In his new role Mojmír reports to Dr. Jürgen Bernauer, Global Product Group Manager Semiconductors in Lenzburg, Switzerland, and to Jaroslav Veselý, Local Division Manager Power Systems in Prague, Czech Republic.Please join us in thanking Jürgen Winterer for his contributions in the last four yearssince the acquisition and in wishing Mojmír great success with his new responsibilities in Prague.Yours, Christoph HoltmannPG Communications ManagerABB news 3 14
3Application in focusIGCTs for demanding high-powerapplicationsApplication noteMounting instructions for HiPaksAs reported in the cover story, ABBhas installed the world’s most powerfulfrequency converter for variable speedpumped hydropower to the Grimsel2 plant in Switzerland. This Grimsel2 pumped storage power plant isequipped with four 100 megavolt amperes (MVA) synchronous units. Eachunit has a separate Francis turbine andpump on the same shaft to either generate electricity or pump water. Includingits dedicated transformers, the 100 MVAconverter is around 10 meters long and7 meters wide and is housed on twofloors behind an imposing machine hall.This record converter for Grimsel, however, is only one example of many wherethe Integrated Gate-Controlled ThyristorEver wondered how to build an inverteraround ABB HiPak modules? Then westrongly recommend to read the application note “Mounting instructions for HiPakmodules”, which is summarized here andcovers the following topics:1. ESD considerationsThe mounting instructions start with general ESD handling considerations. It isimportant to avoid ESD related damageswhen handling IGBT modules in the workshop or lab.2. Terminal connection and SOAGuidelines on a proper busbar design arepresented in order enable low-inductiveand homogenous electrical connections,which are crucial to operate the IGBTwithin its safe operation area (SOA). Inaddition, mechanical design guidelines arepresented to prevent mechanical overstress of the modules even under shockand vibration conditions.3. Gate driveSome basic design rules for gate drivedesign are proposed including activeclamping to limit the voltage stress ontothe IGBTs.4. Application of thermal pasteVery crucial for a reliable operation over thewhole lifetime is good deheating of IGBTmodules. In this chapter the proper application of thermal paste is described including good practice examples.5. Mounting the moduleDid you know that it is important to keep adedicated sequence to torque the mounting screws, and that the required torquehas to stay within certain limits? Like foryour car, you don’t want to lose a wheelduring driving, you do not like to lose connection to an IGBT on a train. The mounting instructions tell you how to screw themodule safely onto the heat sink and thebusbar. Finally, the maximum forces allowed to be applied during the mountingprocess of the module are given. Readingcarefully the mounting instruction prior tothe first inverter design is strongly recommended. Following the mounting instruction guidelines solves a majority of possiblelater field problems, which are quite oftendue to simple connection issues or inadequate designs of connections. (rs)(IGCT) is used. The IGCT is the semiconductor of choice also for many otherdemanding high-power applicationssuch as medium voltage drives (MVD),marine drives, co-generation, windturbine converters, interties and STATCOMs. With its low on-state voltagedrop the IGCT is also an interesting option for high power multi-level converters for various purposes. IGCTs deliverhighest power density and reliability andcan easily be optimized to feature a lowon-state voltage or low switching lossesjust as required by the particular application (see also “Product in focus” onpage 5. (ch/bb)More than 1,000 IGCTs enable the pumped storage power plant Grimsel 2 to operate more flexiblyand efficiently.New technical customer support engineerWe are pleased to announce the appointment of FlorianWeber as new Technical Customer Support Engineer forABB Semiconductors, effective June 1st, 2014.He provides application support to our customers anddistributors, leads design-in projects and advises ourinternal sales team of technical questions.Florian holds a degree in Electrical Engineering from University of Applied Sciences(UAS) Aargau, Switzerland. Before joining ABB Semiconductors he was working for11 years in power hardware development at ABB MV Drives.ABB news 3 14
4New qualified productsBiMOS and bipolarLinPakABB presents the LinPak, a new IGBTphase-leg module outline which featuresPart nr.VoltageCurrentDescriptionHousing5STF 23H20402,000 V2,322 Afast switching thyristorH housing5STF 28H20602,000 V2,667 Afast switching thyristorH housing5SDD 55L55005,500 V5,370 Arectifier diodeL housing5SDD 55M55005,500 V4,850rectifier diodeM housingProduct features2,000 V fast thyristors in H housing Special cathode pattern with amplifying gate structure and lifetime controlfor low turn-on and turn-off losses Low on-state voltage drop togetherwith alloyed technology for excellentcurrent rating Two optimised types: 2,700 A /60 ms and 2,300 A / 40 ms (ITAV/tq) Target market: 10 MW range induction melting, pulse power and fastswitching applications5,500 V diode:– Alloyed technology with excellentsurge current ratings– Operating temperature from -40 Cup to 190 C Reduced clamping force requirements due to smaller diode diameter– Target market: industry and tractionProducts in the pipelineBiMOS and bipolarPart nr.VoltageCurrentDescriptionHousing5SDF 20L45214,500 V1,950 AIGBT diodeL housing5SHZ 15H65006,500 V1,500 AReverse blocking IGCTH housingProduct features4,500 V fast diode for IGBT operation Optimized for IGBT operation High RBSOA up to high di/dt Optimized for low switching losses Cosmic radiation withstand rating Target market: developed to operatesafely in power electronic circuitsemploying IGBT and IEGT presspacks, where di/dts up to 5 kA/µsare especially required. This is possible thanks to a doping profile of thesilicon wafer, optimized for a widerange of current densities and di/dts6,500 V reverse blocking (RB) IGCT Capable of blocking reverse voltage(symmetrical IGCT) Low on-state losses and highestpower density Highest inverter efficiencies Target market: The RB-IGCT is thepower switch of choice for CSI e.g.for medium voltage drive systems aswell for breaker applicationsProcess change notificationsPCN nr.Part nr.SubjectPCN issuing dateIGBT 14-065SNA 3600E170300 / 5SNAsubstrate RG integrated5 Aug 20142400E170305 and adapted standardsin chip5STP 03D6500, 5STP 08F6500Back end production linePCT 14-0419 Sep 2014 Very low inductanceHigh current densityExcellent paralleling capabilitiesIntegrated temperature sensorDedicated mounting area for gatedrive boardThe first modules to be developed will be1,700 V / 2 x 900 A (samples in 2015)and 3,300 V / 2 x 450 A rated AlSiCbased LinPaks for demanding tractionapplications. Cu-based industrial LinPakswith 1,700 V / 2 x 900 A and 1,200 V / 2x 1,000 A ratings as well as 4.5 kV and6.5 kV high-voltage traction versions withthe same footprint, but rearranged electrical connections in order to cope withhigher clearance and creepage requirements will be introduced next.For more information about the newLinPak please call or email, or visit ourwebsite at www.abb.com/semiconductors. (rs)Phased-out productsBiMOS and bipolarMaterialLast deliveries5SDD 10T1800Dec 20145SDD 38F2000Dec 20145SDD 17F6000Dec 20145SDD 92Z0200Dec 20145SDD 92Z0400Dec 20145SDD 0105Z0400Dec 20145SDD 0135Z0200Dec 20145SDD 0135Z0400Dec 20145SDF 90Z0400Dec 20145SDF 0103Z0400Dec 20145SDF 0131Z0400Dec 20145SMX 12L2520Nov. 20145SLX 12L2510Nov 20145SMX 12/76/86E1280Sep 20165SMX 12/76/86H1280Sep 20165SMX 12/76/86K1280Sep 20165SMX 12/76/86L1280Sep 2016ABB news 3 14
5Product in focusAsymmetric 4.5 kV IGCTsSince different applications require different medium voltage drive characteristics, the installed power semiconductorsneed to be differently tuned to have theright trade-off between conduction andturn-off losses for the given use. Thebasic phenomenon making the tuningpossible is that the operation of bipolarpower devices, like IGCTs, is based onthe injection of charged carriers (electrons and holes) into the base regions,where they recombine and annihilateafter a certain time called carrier lifetime. This lifetime can be reduced byelectron or ion (proton or helium) irradiation. When the processed IGCT waferleaves the wafer manufacturing it has along life time meaning that it in its original state has a low on-state voltage buthigh turn-off losses. By selecting theirradiation dose (number of impingingelectrons or ions per device area andtime), the concentration of generatedpoint defects in the silicon bulk canbe controlled and the required lifetimeachieved. Higher irradiation dosesachieve lower turn-off losses and highruggedness during fast switching at theprice of increased on-state voltage.For the commonly used 4.5 kV asymmetric IGCT ABB offers four predefinedstandard devices. Two with the standardtechnology and two with the HPT technology featuring an increased turn-offcapability. The difference betweenthe two technologies is the improvedswitching capability for the HPT technology. Each of these devices has itsunique irradiation scheme giving fourdevices with different electrical characteristics making it easy to find the deviceneeded for a specific application. Thefigure below shows the four standardIGCTs in their respective position on theconduction (on-state) versus turn-off(Eoff) losses trade-off curve. For applications with a high switching frequencythe 5SHY 40L4511 would normally bethe device of choice whereas the 5SHY35L4522 is tailored for applications witha low switching frequency. The devices5SHY 55L4500 and 35L4520 are aimingfor the golden mean. In special caseswhere it would be advantageous to havea device located somewhere in-betweenthe predefined standard devices acustomer specific solution can easily berealized to optimize the trade-off for itsgiven application. Adjusting the on-statevoltage and turn-off losses impacts other parameters, such as surge current,but there are no fundamental differencescaused by the irradiation. Due to this itis possible to use the same gate unit forall four standard devices and possiblecustomer specific devices in-betweenwithout the need for device dependentadjustments. (ch/bb)Portrait:ABB distributorNIEC-Nihon InterElectronicsCorporationNihon Inter Electronics Corp (NIEC), established in Kanagawa, Japan, in 1957,now listed on the second section of theTokyo Stock Exchange, is specializedin R&D, manufacturing and selling ofpower semiconductor devices to powersupply, renewable energy and automotive applications as well as distributingelectrical components (units). Since1995, NIEC distributes ABB Semiconductors’ products to Japanese customers. NIEC has seven subsidiaries inJapan and around East Asia with over500 employees. One of the subsidiaries manufactures POWER STACK usingABB products and has many assemblydelivery records.As the power semiconductor pioneerin Japan, NIEC provides discrete andpower module devices to the widerange of markets as industrial, automotive and renewable energy. We have agood relationship with main manufacturers of electrical power conversioncompanies in Japan. With experienceand know-how of more than 55 yearsin the global semiconductor market, weprovide the most suitable devices, withthe best quality and in a timely mannerto the customers.We have the certification and accreditation of ISO 9001:2008, ISO/TS16949:2002 and ISO 14001:2004 andalso have received best quality awardstwo years in a row for our high-qualityproducts and services from one ofthe Japanese automotive componentcompanies.Our goal is to enhance our technologiesto offer higher power conversion efficiency to the customers for their satisfaction and success. (ni)Trade-off curve for ABBs standard 4.5 kV asymmetric IGCTs.ABB news 3 14
6Technology in focusHPT Increasing or stabilizing the maximumcontrollable current in an IGCT involveswork in two directions. On one hand,a classic electrical engineering effortis required to minimize stray impedance in the gate circuit – parallelizingcurrent paths and bringing antiparallelcurrents close together. This ascertainsthat the gate signal distributes quicklyto all parts of the device – which getsmore difficult for large-area devices.The other approach targets the currenthandling capability of the semiconductor switching cell – the “local capability”.ABB showed the effects of modulatingthe p-base in 2007 with the introductionof HPT technology. Particularly, guidingthe current using doping concentrationgradients below the thyristor segmentswas extremely beneficial for balancingthe large-area effect on current capability. The HPT technology improved thedevice capability over the whole operat-Publicationscalendaring temperature range, particularly atlow temperatures.The wishes to further increase the current capability at higher temperatures,facilitate a higher maximum junctiontemperature and to additionally reducethe switching losses triggered the development of an advanced HPT platform:the HPT platform.ABB introduced the HPT technology in2011. The fine-tuning of doping concentration profiles below the thyristorsegments avoided current crowdingwithin the electric field that establishesduring turn-off. A weaker anode designlowered the switching losses. ABB nowadapts the HPT technology for reverseconducting IGCTs. The technology isalready available for implementation inupcoming asymmetric IGCTs with increased junction temperature specifications. (tw/ma) Bodo’s Power Systems, May 2014“Record performance with IGCTs,cool” Power Electronic Europe, July 2014“Fast thyristors. When burning forinduction heating solutions” Power Electronic Europe, October2014“Thyristors for 10 GW PowerTransmission”Impr
NIEC-Nihon Inter Electronics Corporation. ABB news 3 14 2 Grimsel in the Swiss Alps is a nice place to escape the hot summer in Switzerland This is, obviously, not the reason I am mentioning it here, Grimsel is also a place where the latest record frequency converter from ABB, taking advan-tage of ABB’s great IGCTs, was installed. More than 1,000 IGCTs make sure that the pumped stor-age .
ABB Control SECRL - 1 2001-06-19 A New Contactor Range from ABB New Generation ABB Contactors. ABB Control SECRL - 2 2001-06-19 The ABB range of A The ABB range of A contactorscontactors A 9, A 12, A 16 A 26, A 30, A 40 A 50, A 63, A 75 A 95, A
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ABB - global market and technology leader in AC drives ABB (www.abb.com) is a leader in power and automation technologies that enable utility and industry customers to improve their performance while lowering environmental impact. ABB is the world's largest drives manufacturer. The ABB Group of companies operates in around 100 countries
E-bypass. The ABB E-Clipse Bypass has taken these developments to the next level. In addition to the benefits of the previous ABB design, ABB has added new capabilities focused upon the changing and evolving customer and market requirements. This brochure will give the user a brief overview
In 1994, ABB pioneered serial communications for VFDs in the HVAC industry. Today ABB has installed over 150,000 units (in the U.S. alone) connected to building automations systems using the various HVAC communications protocols. The ABB E-Clipse Bypass includes serial communications in the bypass mode. Now, going to bypass does not mean losing
values quoted in the Coil voltage selection table Coil consumption at Uc max. q 20 C: 9 W pull-in/holding Replacement coils: consult us (standard coils used on NL control relays are not suitable for TNL control relays). Pos.1 A B Pos. 3, 4 ABB ABB ABB ABB A B Ambient temp. Max. switching frequency mm mm C Operating cycles/h
ANSI A300 (Part 7), approved by industry consensus in 2006, contains many elements needed for an effective TVMP as required by this Standard. One key element is the “wire zone – border zone” concept. Supported by over 50 years of continuous research, wire zone – border zone is a proven method to manage vegetation on transmission rights-of-ways and is an industry accepted best practice .
