Appendix 5 Model Card Parameters For Built-in Components

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Appendix 5Model card parameters for built-incomponentsIn this Appendix, names and default values of model card parameters are given for built-in analoguecomponents. These are SPICE models of diode, MOSFET, BJT, and JFET. In SPICE manuals more detailedexplanations of these models and model card parameters can be found. Nevertheless, there are different versions ofSPICE, and we hope this list of model card parameters can be useful to determine which version of SPICE model isimplemented in Alecsis.If you need some version of the model that is not built into Alecsis, you have to define new model inAleC .Note:In the parameter tables, some of the parameters are dummy, i.e. they have no meaning. They aregiven here for completeness, as memory is allocated for them (as in SPICE). Some of them are used for results ofparameters preprocessing.A5.1. Diode model card parametersSPICE 2G6 diode model is built into Alecsis.208

Appendix 5. Model card parameters for built-in components209Physical units are not given in the following table. We will give theseunits in new versions of this Manual.Table A5.1.namedefaultDiode model card parameters in Alecsis.unit-meaningdummy, not usedsaturation currentis1e-14parasitic resistancers0.0emission coefficientn1.0transit timett0.0zero-bias p-n capacitancecjo0.0p-n potentialvj1.0p-n grading coefficientm0.5bandgap voltageeg1.11IS temperature coefficientxti3.0flicker noise coefficientkf0.0flicker noise exponentaf1.0forward-bias depletion capacitance coefficientfc0.5reverse breakdown "knee" voltagebv0.0reverse breakdown "knee" currentibv1e-3Following parameters are read from the model card, but are not used in the current version of the model:recombination current parameterisremission coefficient for ISRnrhigh-injection "knee" currentikfreverse breakdown ideality factornbvlow-level reverse breakdown "knee" currentibvllow-level reverse breakdown ideality factornbvlIKF temperature coefficient (linear)tikfBV temperature coefficient (linear)tbv1BV temperature coefficient (quadratic)tbv2RS temperature coefficient (linear)trs1RS temperature coefficient (quadratic)trs2-A5.2. MOSFET model card parametersAlecsis has four versions (levels) of MOS models. These are level 1, level 2, level 3 and level 13 models.The first three are standard SPICE models. Fourth model is BSIM model (Berkeley Short-Channel IGFET Model),which is denoted as level 13 in HSPICE.A5.2.1. MOSFET level 1, 2 and 3 parametersSPICE 2G6 MOSFET level 1, 2, and 3 models are built into Alecsis.

210Alecsis 2.3 - User’s manualParameter explanations are not given in the following table. We will givethese explanations in new versions of this Manual.Table A5.2.MOSFET level 1, 2, and 3 model card parameters in )m/smAA/m21/VF/m2V-meaningFor use of macromodels.

Appendix 5. Model card parameters for built-in components211Following parameters are read from the model card, but are not used in the current version of the model:rgΩrbΩrdsΩA/mjsswn VpbswFcbdFcbssttmwdutraThe following two parameters are used, if they are not given when MOS transistor is invoked (connected):mchannel lengthl0.0mchannel widthw0.0A5.2.2. BSIM parameters (level 13)HSPICE MOSFET level 13 model is built into Alecsis.Table A5.3.MOSFET level 13 model card parameters in V µmV µmVV µmV µmV1/2V1/2 µmV1/2 µmµmµmµmµmcm2/(Vs)µmµm1/V(1/V) µm(1/V) µmµm/V(µm/V) µm(µm/V) µm(cm/V)2 / s((cm/V)2 / s) µm((cm/V)2 / s) µmmeaningmosfet model level selector, 13 for HSPICE BSIMflatband voltage and its length and width sensitivitiestwo times the Fermi potential, its length and widthsensitivitiesroot-vbs threshold coefficient, its length and widthsensitivitieslinear vbs threshold coefficient, its length and widthsensitivitieslinear vds threshold coefficient, its length and widthsensitivitieslow drain field first order mobilitydifference between drawn poly and electricaldifference between drawn diffusion and electricalgate field mobility reduction factor, its length and widthsensitivitiesdrain field mobility reduction factor, its length and widthsensitivitiesvbs correction to low field first order mobility, its length andwidth sensitivities

Alecsis 2.3 - User’s e-50.01.0e-40.80.60.50.332.0e-60.51/V(1/V) µm(1/V) µm1/V(1/V) µm(1/V) µm1/V2(1/V2) µm(1/V2) µmµm/V2(µm/V2) µm(µm/V2) µmcm2/(Vs)cm2/(Vs) µmcm2/(Vs) µm(cm/V)2 / s((cm/V)2 / s) µm((cm/V)2 / s) µm(cm/V)2 / s((cm/V)2 / s) µm((cm/V)2 / s) µmµm/V2(µm/V2) µm(µm/V2) µmµmºCVF/mF/mF/mµmµm1/V(1/V) µm(1/V) µm1/V(1/V) µm(1/V) µmΩ/squareF/m2F/mA/m2VVmmvbs correction to linear vds threshold coefficient, its lengthand width sensitivitiesvds correction to linear vds threshold coefficient, its lengthand width sensitivitiesvbs reduction to gate field mobil. reduction factor, its lengthand width sensitivitiesvbs reduction to drain field mobil. reduction factor, itslength and width sensitivitieshigh drain field mobility, its length and width sensitivitiesvbs reduction to high drain field mobility, its length andwidth sensitivitiesvds reduction to high drain field mobility, its length andwidth sensitivitiesvds reduction to drain field mobility reduction factor, itslength and width sensitivitiesgate oxide thicknessreference temperature of modelcritical voltage for high drain field mobility reductiongate to drain parasitic capacitance; f/m of widthgate to source parasitic capacitance; f/m of widthgate to bulk parasitic capacitance; f/m of lengthselector for gate capacitance charge sharing coefficientdummy, not useddummy, not usedlow field weak inversion gate drive coefficient, - -, value of200 for n0 disables weak inversion calculationvbs reduction to low field weak inversion gate drivecoefficient., its length and width sensitivitiesvds reduction to low field weak inversion gate drivecoefficient., its length and width sensitivitiessheet resistance / squarezero-bias bulk junction bottom capacitancezero-bias bulk junction sidewall capacitancebulk junction saturation currentbulk junction bottom potentialbulk junction sidewall potentialbulk junction bottom grading coefficientbulk junction sidewall grading coefficientdefault width of the layeraverage variation of size due to side etching or maskcompensation

Appendix 5. Model card parameters for built-in components213A5.3. BJT model card parametersSPICE 2G6 bipolar junction transistor (BJT) model is built into Alecsis.Table A5.4.BJT model card parameters in c1.0e-16100.1.0. (means )0. (means )0.1.51.1.0. (means )0. (means cjc0.0. (means )0. (means rb)0.0.0.0.750.330.0.0. (means ningdummy, not usedsaturation currentideal maximum forward current gainforward current emission coefficientforward early voltagecorner for forward beta high-current roll-offbase-emitter leakage saturation currentbase-emitter leakage emission coefficientideal maximum reverse current gainreverse current emission coefficientreverse early voltagecorner for reverse beta high-current roll-offbase-collector leakage saturation currentbase-collector leakage emission coefficientdummy, not useddummy, not usedzero bias base resistancecurrent where base resistance falls halfway to its minimum valueminimum base resistance at high currentsemitter resistancecollector resistancezero-bias base-emitter depletion capacitancebase-emitter built-in potentialbase-emitter junction grading coefficientideal forward transit timecoefficient for bias dependence of tfvoltage describing vbc depencence of tfhigh-current parameter for effect on tfexcess phase at f 1/(2*π*tf)zero-bias base-collector depletion capacitancebase-collector built-in potentialbase-collector junction grading coefficientfraction of base-collector depletioncapacitance connected to internal base nodeideal reverse transit timedummy, not useddummy, not useddummy, not useddummy, not usedzero-bias collector-substrate capacitancesubstrate-junction built-in potentialsubstrate-junction exponential factorforward and reverse beta temperature coefficientenergy gap for temperature effect on issaturation current temperature exponentflicker noise coefficient

214Alecsis 2.3 - User’s manualflicker noise exponentcoefficient for forward-bias depletionFollowing parameters are read from the model card, but are not used in the current version of the model:high-current roll-off coefficientnkAsubstrate p-n saturation currentisssubstrate p-n emission coefficientnsCepitaxial region charge factorqcoepitaxial region resistancercoΩVcarrier mobility "knee" voltagevoepitaxial region doping factorgamma1/ºCRE temperature coefficient(linear)tre11/(ºC)2RE temperature coefficient(quadratic)tre21/ºCRB temperature coefficient(linear)tbr11/(ºC)2RB temperature coefficient(quadratic)tbr21/ºCRBM temperature coefficient(linear)trm11/(ºC)2RBM temperature coefficient(quadratic)trm21/ºCRC temperature coefficient(linear)trc11/(ºC)2RC temperature coefficient(quadratic)trc2affc1.0.5A5.4. JFET model card parametersSPICE JFET model is built into Alecsis.Physical units and parameter explanations are not given in the followingtable for most of the parameters. We will give these units andexplanations in new versions of this Manual.Table 2.01e-40.00.00.00.00.01.01e-140.01.00.5JFET model card parameters in Alecsis.unit-meaningdummy, not used-dummy, not useddummy, not useddummy, not used

Appendix 5. Model card parameters for built-in components215dummy, not usedFollowing parameters are read from the model card, but are not used in the current version of the model:dummy, not useddummy, not useddummy, not usedgate p-n emission coefficientngate p-n recombination current parameterisremission coefficient for ISRnrionization coefficientalphaionization "knee" voltagevkgate p-n grading coefficientmVTO temperature coefficientvtotcBETA exponential temperature coefficientbetatceIS temperature coefficientxti

components. These are SPICE models of diode, MOSFET, BJT, and JFET. In SPICE manuals more detailed explanations of these models and model card parameters can be found. Nevertheless, there are different versions of SPICE, and we hope this list of model card parameters can be useful to determine which version of SPICE model is implemented in Alecsis.

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