BE 2018 SCHEME THIRD SEMESTER SYLLABUS EC / TC

BE 2018 SCHEME THIRD SEMESTER SYLLABUS EC / TC

B. E. COMMON TO ALL PROGRAMMESChoice Based Credit System (CBCS) and Outcome Based Education (OBE)SEMESTER - IIITRANSFORM CALCULUS, FOURIER SERIES AND NUMERICAL TECHNIQUESCourse CodeCIE Marks4018MAT31Teaching Hours/Week (L:T:P)(2:2:0)SEE Marks60CreditsExam Hours0303Course Learning Objectives: To have an insight into Fourier series, Fourier transforms, Laplace transforms, Differenceequations and Z-transforms. To develop the proficiency in variational calculus and solving ODE’s arising in engineeringapplications, using numerical methods.Module-1Laplace Transforms: Definition and Laplace transform of elementary functions. Laplace transforms ofPeriodic functions and unit-step function – problems.Inverse Laplace Transforms: Inverse Laplace transform - problems, Convolution theorem to find the inverseLaplace transform (without proof) and problems, solution of linear differential equations using Laplacetransform.Module-2Fourier Series: Periodic functions, Dirichlet’s condition. Fourier series of periodic functions period 2 andarbitrary period. Half range Fourier series. Practical harmonic analysis, examples from engineering field.Module-3Fourier Transforms: Infinite Fourier transforms, Fourier sine and cosine transforms. Inverse Fouriertransforms. Simple problems.Difference Equations and Z-Transforms: Difference equations, basic definition, z-transform-definition,Standard z-transforms, Damping and shifting rules, initial value and final value theorems (without proof) andproblems, Inverse z-transform. Simple problems.Module-4Numerical Solutions of Ordinary Differential Equations (ODE’s): Numerical solution of ODE’s of firstorder and first degree- Taylor’s series method, Modified Euler’s method. Range - Kutta method of fourthorder, Milne’s and Adam-Bashforth predictor and corrector method (No derivations of formulae), Problems.Module-5Numerical Solution of Second Order ODE’s: Runge -Kutta method and Milne’s predictor and correctormethod.(No derivations of formulae).Calculus of Variations: Variation of function and functional, variational problems, Euler’s equation,Geodesics, hanging chain, problems.Course Outcomes: At the end of the course the student will be able to: CO1: Use Laplace transform and inverse Laplace transform in solving differential/ integralequation arising in network analysis, control systems and other fields of engineering. CO2: Demonstrate Fourier series to study the behaviour of periodic functions and theirapplications in system communications, digital signal processing and field theory. CO3: Make use of Fourier transform and Z-transform to illustrate discrete/continuousfunction arising in wave and heat propagation, signals and systems. CO4: Solve first and second order ordinary differential equations arising in engineeringproblems using single step and multistep numerical methods. CO5:Determine the extremals of functionals using calculus of variations and solveproblems arising in dynamics of rigid bodies and vibrational analysis.Question paper pattern:1. The question paper will have ten full questions carrying equal marks.2. Each full question will be for 20 marks.

There will be two full questions (with a maximum of four sub- questions) from each module.Sl.Name of theName of theTitle of the BookEdition and YearNo.Author/sPublisherTextbooks1Advanced EngineeringE. KreyszigJohn Wiley & Sons 10th Edition, 2016Mathematics2Higher EngineeringB. S. GrewalKhanna Publishers 44th Edition, 2017Mathematics3Engineering MathematicsSrimanta Pal et alOxford University 3rd Edition, 2016PressReference Books1Advanced EngineeringC. Ray Wylie, Louis McGraw-Hill6th Edition, 1995MathematicsC. BarrettBook Co2Introductory Methods ofS. S. SastryPrentice Hall of4th Edition 2010Numerical AnalysisIndia3Higher EngineeringB.V. RamanaMcGraw-Hill11th Edition,2010Mathematics4A Text Book of EngineeringN. P. Bali andLaxmi Publications 2014MathematicsManish Goyal5AdvancedEngineering ChandrikaPrasad Khanna2018Mathematicsand Reena GargPublishing,Web links and Video Lectures:1. http://nptel.ac.in/courses.php?disciplineID 1112. http://www.class-central.com/subject/math(MOOCs)3. http://academicearth.org/4. VTU EDUSAT PROGRAMME - 20

B. E. EC / TCChoice Based Credit System (CBCS) and Outcome Based Education (OBE)SEMESTER - IIINETWORK THEORYSubject CodeCIE Marks4018EC32Number of Lecture Hours/Week (L:T:P)3:2:0SEE marks60(L:T:P)CREDITS04Exam Hours03Course Learning Objectives: This course will enable students to: Describe basic network concepts emphasizing source transformation, source shifting, mesh and nodaltechniques to solve for resistance/impedance, voltage, current and power. Explain network Thevenin‘s, Millman‘s, Superposition, Reciprocity, Maximum Power transfer andNorton‘s Theorems and apply them in solving the problems related to Electrical Circuits. Explain the behavior of networks subjected to transient conditions. Use applications of Laplace transforms to network problems. Study two port network parameters like Z, Y, T and h and their inter-relationships and applications. Study of RLC Series and parallel tuned circuit.Module – 1Basic Concepts: Practical sources, Source transformations, Network reduction using Star – Deltatransformation, Loop and node analysis with linearly dependent and independent sources for DC and ACnetworks.Module – 2Network Theorems:Superposition, Millman‘s theorems, Thevinin‘s and Norton‘s theorems, Maximum Power transfer theorem.Module – 3Transient behavior and initial conditions: Behavior of circuit elements under switching condition and theirRepresentation, evaluation of initial and final conditions in RL, RC and RLC circuits for AC and DCexcitations.Module – 4Laplace Transformation & Applications: Solution of networks, step, ramp and impulse responses, waveformSynthesis.Module – 5Two port network parameters: Definition of Z, Y, h and Transmission parameters, modelling with theseparameters, relationship between parameters sets.Resonance:Series Resonance: Variation of Current and Voltage with Frequency, Selectivity and Bandwidth, Q-Factor,Circuit Magnification Factor, Selectivith with Variable Capacitance, Selectivity with Variable Inductance.Parallel Resonance: Selectivity and Bandwidth, Maximum Impedance Conditions with C, L and f Variable,current in Anti-Resonant Circuit, The General Case-Resistance Present in both Branches.Course Outcomes: At the end of the course, the students will be able to: Determine currents and voltages using source transformation/ source shifting/ mesh/ nodal analysis andreduce given network using star-delta transformation/source transformation/ source shifting. Solve network problems by applying Superposition/ Reciprocity/ Thevenin‘s/ Norton‘s/ MaximumPower Transfer/ Millman‘s Network Theorems and electrical laws to reduce circuit complexities and toarrive at feasible solutions. Calculate current and voltages for the given circuit under transient conditions. Apply Laplace transform to solve the given network. Solve the given network using specified two port network parameter like Z or Y or Tor h. Understand the concept of resonance.

Question paper pattern: Examination will be conducted for 100 marks with question paper containing 10 full questions, eachof 20 marks. Each full question can have a maximum of 4 sub questions. There will be 2 full questions from each module covering all the topics of the module. Students will have to answer 5 full questions, selecting one full question from each module. The total marks will be proportionally reduced to 60 marks as SEE marks is 60.Text Books:1. M.E. Van Valkenberg (2000), ―Network analysisǁ, Prentice Hall of India, 3rdedition, 2000,ISBN: 9780136110958.2. Roy Choudhury, ―Networks and systemsǁ, 2nd edition, New Age InternationalPublications, 2006, ISBN: 9788122427677Reference Books:1. Hayt, Kemmerly and Durbin ―Engineering Circuit Analysisǁ, TMH 7th Edition,2010.2. J. David Irwin /R. Mark Nelms, ―Basic Engineering Circuit Analysisǁ, John Wiley, 8thed, 2006.3. Charles K Alexander and Mathew N O Sadiku, ― Fundamentals of Electric Circuitsǁ, TataMcGraw-Hill, 3rd Ed, 2009.

B. E. EC / TCChoice Based Credit System (CBCS) and Outcome Based Education (OBE)SEMESTER - IIIELECTRONIC DEVICESCourse CodeCIE Marks18EC33Number of Lecture Hours/Week (L:T:P)03SEE marksCREDITS03Exam Hours406003Course Learning Objectives: This course will enable students to: Understand the basics of semiconductor physics and electronic devices. Describe the mathematical models BJTs and FETs along with the constructional details. Understand the construction and working principles of optoelectronic devices Understand the fabrication process of semiconductor devices and CMOS process integration.Module-1SemiconductorsBonding forces in solids, Energy bands, Metals, Semiconductors and Insulators, Direct and Indirectsemiconductors, Electrons and Holes, Intrinsic and Extrinsic materials, Conductivity and Mobility, Drift andResistance, Effects of temperature and doping on mobility, Hall Effect. (Text 1: 3.1.1, 3.1.2, 3.1.3, 3.1.4, 3.2.1,3.2.3, 3.2.4, 3.4.1, 3.4.2, 3.4.3, 3.4.5).Module-2P-N JunctionsForward and Reverse biased junctions- Qualitative description of Current flow at a junction, reverse bias,Reverse bias breakdown- Zener breakdown, avalanche breakdown, Rectifiers. (Text 1: 5.3.1, 5.3.3, 5.4, 5.4.1,5.4.2, 5.4.3)Optoelectronic Devices Photodiodes: Current and Voltage in an Illuminated Junction, Solar Cells,Photodetectors. Light Emitting Diode: Light Emitting materials.(Text 1: 8.1.1, 8.1.2, 8.1.3, 8.2, 8.2.1)Module – 3Bipolar Junction TransistorFundamentals of BJT operation, Amplification with BJTS, BJT Fabrication, The coupled Diode model (EbersMoll Model), Switching operation of a transistor, Cutoff, saturation, switching cycle, specifications, Drift in thebase region, Base narrowing, Avalanche breakdown. (Text 1: 7.1, 7.2, 7.3, 7.5.1, 7.6, 7.7.1, 7.7.2, 7.7.3).Module-4Field Effect TransistorsBasic pn JFET Operation, Equivalent Circuit and Frequency Limitations, MOSFET- Two terminal MOSstructure- Energy band diagram, Ideal Capacitance – Voltage Characteristics and Frequency Effects, BasicMOSFET Operation- MOSFET structure, Current-Voltage Characteristics. (Text 2: 9.1.1, 9.4, 9.6.1, 9.6.2,9.7.1, 9.7.2, 9.8.1, 9.8.2).Module-5Fabrication of p-n junctionsThermal Oxidation, Diffusion, Rapid Thermal Processing, Ion implantation, chemical vapour deposition,photolithography, Etching, metallization. (Text 1: 5.1)Integrated CircuitsBackground, Evolution of ICs, CMOS Process Integration, Integration of Other Circuit Elements. (Text 1: 9.1,9.2, 9.3.1, 9.3.3).Course Outcomes: After studying this course, students will be able to: Understand the principles of semiconductor Physics Understand the principles and characteristics of different types of semiconductor devices Understand the fabrication process of semiconductor devices. Utilize the mathematical models of semiconductor junctions and MOS transistors for circuits andsystems.