CAB530M12BM3 Rev. 0
CAB530M12BM31200 V, 530 A All-Silicon CarbideHalf-Bridge ModuleTechnical Features VDS1200 VIDS530 APackage 61.4 mm X 106.4 mm X 30 mmIndustry Standard 62mm FootprintUltra Low Loss, High-Frequency OperationZero Turn-off Tail Current from MOSFETNormally-off, Fail-safe Device OperationCopper Baseplate and Aluminum Nitride InsulatorApplications Railway & TractionEV Charging InfrastructureIndustrial Automation & TestingHigh-Frequency Power SuppliesRenewable Energy Systems & Grid-Tied InvertersActive Front Ends & AC InvertersSystem Benefits Lightweight, Compact Form-Factor with 62mm-Format Enables System Retrofit Increased System Efficiency due to Low Switching & Conduction Losses of SiCMaximum Parameters (Validated by Design)SymbolParameterVDS maxDrain-Source VoltageVGS maxGate-Source Voltage, Maximum Value-8 19VGS opGate-Source Voltage, RecommendedOp. Value-4 15Max.UnitTest ConditionsNote1200VTransient, 100 nsFig. 32StaticVGS 15 V, TC 25 C, TVJ 175 C Fig. 20541VGS 15 V, TC 90 C, TVJ 175 CDC Source-Drain Current719VGS 15 V, TC 25 C, TVJ 175 CDC Source-Drain Current (Body Diode)442DC Continuous Drain CurrentISDAVGS -4 V, TC 25 C, TVJ 175 CIDS (pulsed) Maximum Pulsed Drain-Source Current1060VGS 15 VISD (pulsed) Maximum Pulsed Diode Current1060VGS 15 VTVJ op1Typ.719IDSISD BDMin.Maximum Virtual JunctionTemperature under SwitchingConditions-40150175 CTVJ 25 C;tPmax limited byTVJmaxOperationIntermittent with Reduced LifeRev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.
MOSFET Characteristics (Per Position) (TVJ 25 C unless otherwise specified)SymbolParameterMin.V(BR)DSSDrain-Source Breakdown Voltage1200VGS(th)Gate Threshold VoltageIDSSZero Gate Voltage Drain CurrentIGSSGate-Source Leakage EOnTurn-On Switching Energy, TJ 25 CTJ 125 CTJ 150 C16.815.616.1Turn-Off Switching Energy, TJ 25 CTJ 125 CTJ 150 C15.514.914.9Internal Gate Resistance2.9CissInput Capacitance39.6CossOutput Capacitance1.4CrssReverse Transfer Capacitance84QGSGate to Source Charge384QGDGate to Drain Charge462QGTotal Gate Charge1362FET Thermal Resistance, Junction to Case0.065RG(int)Rth JCMax.2.5gfsEOff2Drain-Source On-State Resistance Test ConditionsNoteVGS 0 V, TVJ -40 CVDS VGS, ID 140 mAVGS 0 V, VDS 1200 VVGS 15 V, VDS 0 VVGS 15 V, ID 530 AVGS 15 V, ID 530 A, TVJ 150 CVDS 20 V, IDS 530 AVDS 20 V, IDS 530 A, TVJ 150 CVDS 600 V,ID 530 A,VGS -4 V/ 15 V,RG(ext) 1.5 Ω,L 13.6 μHFig. 2Fig. 3Fig. 4Fig. 11Fig. 13VAC 25 mV, f 100 kHzVGS 0 V, VDS 800 V,VAC 25 mV, f 100 kHzFig. 9VDS 800 V, VGS -4 V/ 15 VID 530 APer IEC60747-8-4 pg 21 C/WRev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.Fig. 17
Diode Characteristics (Per Position) (TVJ 25 C unless otherwise specified)Symbol ParameterMin.Typ.Max.5.7UnitVFDiode Forward VoltageVtrrReverse Recovery Time44nsQRRReverse Recovery Charge8.5IRRMPeak Reverse Recovery Current300μCErrDiode Energy TVJ 25 CTVJ 125 CTVJ 150 C0.521.752.375.0AmJTest ConditionsVGS -4 V, IF 530 A, TVJ 25 CVGS -4 V, IF 530 A, TVJ 150 CVGS -5 V, ISD 530 A, VR 800 VdiF/dt 14.0 A/ns, TVJ 150 CVDS 600 V, ID 530A,VGS -5 V/20 V, RG(ext) 1.5 Ω,L 13.6 μHModule Physical CharacteristicsSymbol ParameterR1-3Min.Package Resistance, M2 (Low-Side)LStrayStray InductanceTCCase TemperatureWWeightMSMounting TorqueVisolCase Isolation VoltageClearance DistanceCreepage DistanceMax.Unit0.42Package Resistance, M1 (High-Side)R1-2Typ.TC 25 C, ISD 530 A, Note 10.60mΩ0.280.40nH12530055.5455.53040Between Terminals 2 and 3 CN-mkV930TC 25 C, ISD 530 A, Note 1g45TC 150 C, ISD 530 A, Note 1TC 150 C, ISD 530 A, Note 111.1-40Test ConditionsBaseplate, M6-1.0 boltsPower Terminals, M6-1.0 boltsAC, 50 Hz, 1 minTerminal to TerminalmmTerminal to BaseplateTerminal to TerminalTerminal to BaseplateNote 1 Total Effective Resistance (Per Switch Position) MOSFET RDS(on) Switch Position Package Resistance.3Rev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.NoteFig. 7Fig. 31Fig. 14
Typical Performance800Normalized On-resistance (p.u.)Drain-Source Current, IDS (A)1.8tp 300 μsVGS 15 V100025 C-40 C600100 C125 C150 C400200tp 300 μsVGS 15 V1.71.6150 C1.51.4125 C1.3100 C1.21.1-40 C1.025 C0.9001234057006005001.2150 C125 C100 C4001.00.83000.62000.425 C0 C-25 C-40 C1000.20.00-50-25025507510012515017502Virtual Junction Temperature, TVJ ( C)tp 300 μsVGS 15 V-40 C25 C600100 C125 C150 C400810tp 300 μsVGS 0 V10008006Figure 4. Transfer Characteristic for Various JunctionTemperaturesSource-Drain Current, ISD (A)Source-Drain Current, ISD (A)10004Gate-Source Voltage, VGS (V)Figure 3. Normalized On-State Resistance vs.Junction Temperature2000150 C125 C100 C80060025 C0 C-25 C-40 C400200001234Source-Drain Voltage, VSD (V)Figure 5. 3rd Quadrant Characteristic vs. Junction Temperatures atVGS 15 V41000tp 300 μsVDS 20 VDrain-Source Current, IDS (A)Normalized On-resistance (p.u.)1.4800Figure 2. Normalized On-State Resistance vs. Drain Current for VariousJunction Temperaturestp 300 μsVGS 15 VID 530 A1.6600Drain-Source Current, IDS (A)Figure 1. Output Characteristics for Various JunctionTemperatures1.8400200Drain-Source Voltage, VDS (V)501234567Source-Drain Voltage, VSD (V)Figure 6. 3rd Quadrant Characteristic vs. Junction Temperatures atVGS 0 V (Diode)Rev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.8
Typical PerformanceCiss80010150 C125 C100 C600400Capacitance (nF)Source-Drain Current, ISD (A)100tp 300 μsVGS -4 V100025 C0 C-25 C-40 C2000.100123456Coss17890.010Source-Drain Voltage, VSD (V)100150200Figure 8. Typical Capacitances vs. Drain to Source Voltage(0 V - 200 V)1004.0Conditions:VGS VDSIDS 140 mA3.5Threshold Voltage, Vth (V)Ciss10Capacitance (nF)50Drain-Source Voltage, VDS (V)Figure 7. 3rd Quadrant Characteristic vs. Junction Temperatures atVGS - 4 V (Diode)3.02.512.0Coss1.50.102001.0CrssTJ 25 CVAC 25 mVf 100 kHz0.010.50.04006008001,0001,200-50Drain-Source Voltage, VDS (V)Switching Energy (mJ)120Conditions:TVJ 25 CVDD 600 VRG(ext) 1.5 ΩVGS -4/ 15 VL 13.6 µH7060500255075100125150175Figure 10. Threshold Voltage vs. Junction TemperatureConditions:TVJ 25 CVDD 800 VRG(ext) 1.5 ΩVGS -4/ 15 VL 13.6 µHEOff EOn100Switching Energy (mJ)80-25Virtual Junction Temperature, TVJ ( C)Figure 9. Typical Capacitances vs. Drain to Source Voltage(0 V - 1200 V)EOff4030EOn2080EOff EOn60EOffEOn402010ERR002004006008001000Source Current, IS (A)Figure 11. Switching Energy vs. Drain Current(VDS 600 V)5CrssTJ 25 CVAC 25 mVf 100 kHz1200ERR002004006008001000Source Current, IS (A)Figure 12. Switching Energy vs. Drain Current(VDS 800 V)Rev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.1200
Typical Performance504035Reverse Recovery Energy (mJ)45Switching Energy (mJ)3.0Conditions:IS 530 A, VDD 600 VRG(ext) 1.5 Ω, VGS -4/ 15 VL 13.6 µHEOff EOn302520EOnEOff151050Conditions:IS 530 ARG(ext) 1.5 ΩVGS -4/ 15 VL 13.6 µH2.52.0ERR (VDD 600 V)1.51.00.50.0025507510012515017502550Junction Temperature, TVJ ( C)706050EOn40EOff302010ERR00123456781250.6EOff EOnConditions:TVJ 25 CIS 530 AVDD 600 VVGS -4/ 15 VL 13.6 µH80100150175Figure 14. Reverse Recovery Energy vs. Junction TemperatureReverse Recovery Energy (mJ)9075Junction Temperature, TVJ ( C)Figure 13. MOSFET Switching Energy vs. Junction TemperatureSwitching Energy (mJ)ERR (VDD 800 V)910Conditions:TVJ 25 CIS 530 AVDD 600 VVGS -4/ 15 VL 13.6 µH0.50.40.30.2ERR (VDD 600 V)0.10.00111345678910External Gate Resistor, RG(ext) (Ω)External Gate Resistor, RG(ext) (Ω)Figure 15. MOSFET Switching Energy vs. External Gate Resistance2Figure 16. Reverse Recovery Energy vs. External Gate Resistance10000.5Drain-Source Current, IDS (A)Junction-to-Case Imped., Zthjc ( C/W)0.10.30.010.10.050.020.0010.01Single Pulse1E-610E-6100E-61E-310E-3100E-3110Time, tp (s)Figure 17. MOSFET Junction to Case Transient Thermal Impedance,Zth JC ( C/W)61001010.10.010.0001Limited byRDS(on)Conditions:Tc 25 CD 0Parameter: tp0.1110100Drain-Source Voltage, VDS (V)Figure 18. Forward Bias Safe Operating Area (FBSOA)Rev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.100011
Typical Performance1100Drain-Source Current, IDS (A)Drain-Source DC Current, IDS (DC) (A)8001000ChipModule (RG 1.5)900800700600500400300Conditions:TVJ 150 CLStray-Bussing 4.5 nHLStray-Module 11.1 nH200100Conditions:TVJ 150 50Output Current, IOut (Arms)FET Power Dissipation, PD (W)100050000255075100125Case Temperature, TC ( C)Figure 21. Maximum Power Dissipation Derating vs.Case Temperature7100125150VDS 800 VTC 90 CTVJ 150 CMF 1RG-EXT 1.5 Ω6001500-2575700Conditions:TVJ 150 C-5050Figure 20. Continuous Drain Current Derating vs.Case TemperatureFigure 19. Reverse Bias Safe Operating Area (RBSOA)200025Case Temperature, TC ( C)Drain-Source Voltage, VDS (V)15050040030020010000102030405060708090Switching Frequency, FS (kHz)Figure 22. Typical Output Current Capability vs. Switching Frequency(Inverter Application)Rev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.
Timing Characteristics45035030022.5di/dt (A/ns) and dv/dt (V/ns)400Time (ns)25.0Conditions:TVJ 25 CVDD 600 VRG(ext) 1.5 ΩVGS -4/ 15 15.0dv/dtOFF12.510.07.55.00.010000200400Source Current, IS (A)di/dt (A/ns) and dv/dt (V/ns)Time 1412dv/dtOFF10di/dtON8Conditions:IS 530 AVDD 600 VRG(ext) 1.5 ΩVGS -4/ 15 V64200255075100125150175025Junction Temperature, TVJ ( C)Time (ns)600125150175400tdon200trtf100Conditions:TVJ 25 CIS 530 AVDD 600 VVGS -4/ 15 2000123456789External Gate Resistor, RG(ext) (Ω)Figure 27. Timing vs. External Gate Resistance810020tdoffdi/dt (A/ns) and dv/dt (V/ns)70075Figure 26. dv/dt and di/dt vs. Junction TemperatureConditions:TVJ 25 CIS 530 AVDD 600 VVGS -4/ 15 V80050Junction Temperature, TVJ ( C)Figure 25. Timing vs. Junction Temperature9001000203000800Figure 24. dv/dt and di/dt vs. Source CurrentConditions:IS 530 A, VDD 600 VRG(ext) 1.5 Ω, VGS -4/ 15 V350600Source Current, IS (A)Figure 23. Timing vs. Source Current400Conditions:TVJ 25 CVDD 600 VRG(ext) 1.5 ΩVGS -4/ 15 Vdi/dtON2.5tf0di/dtOFF20.01011012345678910External Gate Resistor, RG(ext) (Ω)Figure 28. dv/dt and di/dt vs. External Gate ResistanceRev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.1112
Definitions9Figure 29. Turn-off Transient DefinitionsFigure 30. Turn-on Transient DefinitionsFigure 31. Reverse Recovery DefinitionsFigure 32. VGS Transient DefinitionsRev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.
Schematic and Pin OutNote 2. The anti-parallel diodes shown in the schematic are MOSFET body diodes.Package Dimensions (mm)CAB530M12BM3HA2103-A01010Rev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.
Supporting Links & Tools CGD1200HB2P-BM3 Evaluation Gate DriverCGD12HB00D: Differential Transceiver BoardCPWR-AN-35: Thermal Interface Material Application NoteKIT-CRD-CIL12N-BM: Dynamic Performance Evaluation Board for the BM2 and BM3 ModuleNotes11 This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the humanbody nor in applications in which failure of the product could lead to death, personal injury or property damage, includingbut not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similaremergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, specialprecautions are required to realize optimal performance. The interconnection between the gate driver and module housingneeds to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, greatcare is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.Rev. 0, 2021-03-02CAB530M12BM34600 Silicon Dr., Durham, NC 27703Copyright 2021 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree , the Cree logo, Wolfspeed , and the Wolfspeed logoare registered trademarks of Cree, Inc.
4 5 5.5 N-m Baseplate, M6-1.0 bolts 4 5 5.5 Power Terminals, M6-1.0 bolts V isol Case Isolation Voltage 5 kV AC, 50 Hz, 1 min Clearance Distance 9 mm Terminal to Terminal 30 Terminal to Baseplate Creepage Distance 30 Terminal to Terminal 40 Terminal to Baseplate Note 1 Total Eff
The Rt. Rev. George N. Hunt The Rev. Frederick K. Jellison The Rev. Dn. Ida R. Johnson The Rev. Michaela Johnson The Rev. Paul S. Koumrian The Rev. Canon Harry E. Krauss * The Rev. H. August Kuehl The Rev. Richard T. Laremore * The Rev. Donald A. Lavallee The Rev. Canon John E. Lawrence The Rev. Dr. Gary C. Lemery * The Rev. Dn. Betsy Lesieur *
NACE Rev. 1.1 (ISIC Rev. 3) codes are often linked with more than one NACE Rev. 2 (ISIC Rev. 4) code. For example, 323 NACE Rev. 1.1 is linked with 261, 263 and 264 NACE Rev. 2 codes; 261 NACE Rev. 2 is linked with only one part of 311, 312, 313, 321 and 323 NACE Rev. 1.1 codes. Thus, it is not possible to obtain full codes of NACE
1912-1914 Most Rev. Edward Joseph Hanna 1939-1948 Most Rev. Thomas Arthur Connolly 1947-1962 Most Rev. Hugh Aloysius Donohoe 1948-1950 Most Rev. James Thomas O’Dowd 1950-1969 Most Rev. Merlin Joseph Guilfoyle 1637-1969 Most Rev. Mark Joseph Hurley 1967-1979 Most Rev. William Joseph McDonald 1970-1974 Most Rev. Norman Francis McFarland
Unión Pentecostés de Iglesias Locales Internacional, Incorporadas BOARD OF TRUSTEES Rev. Dr. Santiago "Jimmy" Longoria, Jr. Rev. C. Isaac De Los Santos D.Th Rev. Dr. John V. Carmona Rev. Josué B. Sánchez Rev. Roy Faragoza Rev. Becky Tafolla Rev. Salomon Munoz COMISIÓN DE ARTÍCULOS CONSTITUCIONALES Rev. Josué B. Sánchez
16 Rev. Michael Keller 1983 17 Rev. Cyril McDonnell 2000 19 Rev. Thomas Foudy 2019 21 Msgr. David Bushey 1994 21 Rev. Jose Izquierdo SJ 1997 22 Rev. Julian Bastarrica, OFM 1990 23 Rev. Harry Ringenberger 2016 29 Rev. John Lama 1994 Eternal rest grant unto them O Lord, And may perpetual light shine upon them.
Apr 11, 2016 · The Rev. Alton Jones The Rev. James L. Smith The Rev. Robert Postell The Rev. Mose Thomas The Rev. Frederick D. Wallace The Rev. Martha Williams 2016 Sister Annie McBride BAHAMAS CONFERENCE 2012 2013 2014 The Rev. Herman Thompson Mrs. Florence Louise Gibson 2015 Sister Rebecca Major Sister Jacqueline Forbes 2016
The Rev. John Miles Evans Mr. David and The Rev. Katrina L. Grusell The Rev. Lura M. Kaval The. Rev. W. Allan Knight The Rev. Richard Jr. and Mrs. Jeanne M. Laribee Mr. Paul and Mrs. Colleen Mawicke James I. Melhorn The Rev. James and Mrs. Debbie Ransom Mr. Norman K. Ross The Rev. Anjel and Mr. Stuart Scarborough The
AS 8 PROTEIN SYNTHESIS QUESTIONSHEET 10 (b) (i) genetic code on DNA is copied into mRNA; double helix of DNA unwinds (in region to be copied); complementary nucleotides line up along coding strand of DNA; A to U and C to G; assemble together to make a complementary strand of mRNA; under influence of RNA polymerase; mRNA unzips from DNA template and passes to ribosomes; max 5 (ii) ATP provides .
