Lecture 05BJTs CircuitsMicroelectronic Circuit bymeiling CHEN1
topics Large-signal operation BJT circuits at DC BJT biasing schemesMicroelectronic Circuit bymeiling CHEN2
Large-signal Æ Bias (DC) signal (AC)Bias signalvo Vcc iC Rc Vcc Rc I S evBEVTvBE VBE viMicroelectronic Circuit bymeiling CHEN3
DC load line : VBB I B RB VBEMicroelectronic Circuit bymeiling CHEN4
VCC I C RC VCEMicroelectronic Circuit bymeiling CHEN5
head room (small)Leg room (small)VCC I C RCA VCE QAVCC I C RCB VCE QBRCB RCAMicroelectronic Circuit bymeiling CHEN6
BJT operate as a switchSwitch off:vI 0.5V i B 0 i C 0 v C VCCSwitch on:vC 0.2V 0VSwitch on Æ saturation modeSwitch off Æ cut-off modeMicroelectronic Circuit bymeiling CHEN7
Example 5.3BJT work in saturation modeVC VCE ( sat ) 0.2V50 β10 0.2I C ( sat ) 9.8mA1kI C ( sat ) 9.8mI B (max) 0.196mA50β min 150I C ( sat ) 9.8mI B (min) 0.0653mA150β maxI B I B (max) overdriveRB factor5 0.7 4.3 2.2kIB1.96Microelectronic Circuit bymeiling CHEN8
Example 5.4 (DC analysis)Reverse biasβ 100forward biasAssume BJT in active mode :VE 4 0.7V 3.3VIE VE3.3 1mARE 3.3k100 1mA 0.99mAI C αI E 100 1I B I E I C 0.01mAActive mode checkVC 10 I C 4.7 k 5.3VMicroelectronic Circuit bymeiling CHEN9
Example 5.5 (DC analysis)Assume BJT in active mode :VE 6 0.7V 5.3Vβ 100VE5 .3IE 1.6mARE 3.3k100 1.6mA 1.584mAI C αI E 100 1I B I E I C 0.016mAVC 10 I C 4.7 k 2.48VJC : forward bias Not in active modeJE : forward biasMicroelectronic Circuit bymeiling CHEN10
Assume BJT in saturation mode :VE 6 0.7V 5.3VVC VE VCE ( sat ) 5.3 0.2 5.5VIE 5 .3VE 1.6mAI E 3.3m10 5.5IC 0.96mA4 .7I B I E I C 0.64mAMicroelectronic Circuit bymeiling CHEN11
Example 5.6 (DC analysis)VBE 0VI B 0mAβ 100I E 0mAI C 0mAVC Vcc 10VMicroelectronic Circuit bymeiling CHEN12
Example 5.7 (DC analysis)forward biasActive mode checkβ 100reverse biasVE 0.7V10 0.7 4.65mA2kAssume BJT in active mode :100I C αI E 4.65m 4.6mA101VC I C RC 10V 4.6m 1k 10 5.4VIE I B I E I C 0.05mAMicroelectronic Circuit bymeiling CHEN13
Example 5.8 (DC analysis)Reverse biasforward biasβ 100Assume BJT in active mode :5V 100k I B VBE 100k I B 0.7 I B 0.043mAI C βI B 4.3mAVC 10 I C RC 10 4.3m 2k 1.4VMicroelectronic Circuit bymeiling CHEN14
Example 5.9 (DC analysis)β 30Assume BJT in active mode :VE VEB VBRBl arg e I B 05 0.7 4.3mA1kI C I E 4.3V VC 10k 4.3m 5V 38V (impossible)VE 0.7V I E I C (max) 0.5mA VC 0VMicroelectronic Circuit bymeiling CHEN15
Example 5.10 (DC analysis)Reverse biasβ 100forward biasThevenin’s equivalent circuitVBB I B RBB VBE I E REVBB 15VVBB I B RBB VBE ( βI B I B ) RERBB I B 0.0128mA50k 5V100k 50k 100k // 50k 33.3kAssume BJT in active mode : I E 101 I B 1.29mA I C 1.28mAMicroelectronic Circuit bymeiling CHEN16
Example 5.11 (DC analysis)β 100β 10015V ( I C1 I B 2 ) RC1 VC1 I C1 RC1 VC1 VC1 8.6VstartVE 2 VC1 0.7V 9.3V15 9.3 2.85mA2k αI E 2 2.82mAIE2 IC 2with I B 2 0.028mAFind correct currentby iterationVC 2 I C 2 2.7 k 7.62VI B2 IE2 0.028mA101Microelectronic Circuit bymeiling CHEN17
Exercise 5.30 (DC analysis)β 100β 100IC3VC 2Microelectronic Circuit bymeiling CHEN18
Example 5.12 (DC analysis)β 100β 100Q1 and Q2 cannot be conducting at same time.If Q1 ON than Q2 OFF, and vice versa.Assume Q1 on and Q2 off :Microelectronic Circuit bymeiling CHEN19
BJT’s biasing schemes1.2.3.4.5.self-biasBase fixed biasCollector-feedback biasTwo power supply version biasConstant current biasMicroelectronic Circuit bymeiling CHEN20
Why we need good biasing scheme?1.Temperature change ÆCollector biasing current change2.Device change Æ biasing current changeiCT1 T2 T3iC1iC 2vBEiC I S eVBEVTKT 1.38 10 23 ( o K )VT q1.6 10 19Microelectronic Circuit bymeiling CHEN21
VBB VBEIE RE 1R Bβ1. Self-BiasInsensitive to T and βConstrains:VBB VBERE Voltage-divider :RB1 βRRQ RB 1 2R1 R2RE Suggestion:( R1 R2 ) 0.1 I E VCCThe rule of thumb :(經驗法則)VBB 13 VCCI C RC 13 VCC R1 , R2 small I B Trade-offRB1 βVCE (orVCB ) 13 VCCMicroelectronic Circuit bymeiling CHEN22
1. Self-Bias (emitter feedback bias)VCCVCC VBEIE RBRE 1 βRCRBVEREThe rule of thumb :VBB 13 VCCI C RC 13 VCCVCE (orVCB ) 13 VCCMicroelectronic Circuit bymeiling CHEN23
Example 5.13 design the following self bias circuitVBB VBEIE RBRE 1 βThe rule of thumb :VB 13 12 4VVE 4 VBE 3.3VgivenI E 1mAVCC 12Vβ 100( R1 R2 ) 0.1 I E VCCRE VE 3.3 3.3kI E 1m134 ( R1 R2 ) 0.1 1 12 L (a ) RC 12 4kαI E 0.99 1mR2VCC L (b)VB 4V R1 R2R1 80k(a ), (b) R2 40kMicroelectronic Circuit bymeiling CHEN24
2. Base fixed biasVCCRCRBType 1IC β (VBB VBE )RBType 3Type 2IC β (VCC VBE )RBIC RBRB RB1 // RB 2VBBMicroelectronic Circuit bymeiling CHENβ (VBB VBE )RB 2 VCCRB1 RB 225
3. Collector-feedback bias (a)Constrains:RC VCC I E RC I BRB VBEV VI E I B I C CC RBERC 1 BβRB1 βT I C I C RC VCE I B I C Good biasing schemeMicroelectronic Circuit bymeiling CHEN26
3. Collector-feedback bias (b)VCCRBRCVCC ( I B I C ) RC I BRB VBE ( I B I C ) REVCC VBEI E I B IC RC RE 1R BβRET I C I E VCE I B I C Good biasing schemeMicroelectronic Circuit bymeiling CHEN27
4. Two-power supply versionI B RB VBE I E RE VEEVEE VBE IE RE 1R BβConstrains:VBB VBERBRE 1 βMicroelectronic Circuit bymeiling CHEN28
5. Constant current bias by Current mirrorI REF I C1 I B1 I B 2Q Q1 Q2 I B1 I B 2 I BI REF I C1 2 I B ( β 2) I BI I C 2 I C1 ( β 2) I BIV ( VEE ) VBEI Re f CCRVCC VEE VBEI I Re f RI REFMicroelectronic Circuit bymeiling CHEN β( β 2) β29
BJTs Circuits. Microelectronic Circuit by meiling CHEN 2 topics Large-signal operation BJT circuits at DC BJT biasing schemes. Microelectronic Circuit by meiling CHEN 3 BE BE i o cc C c cc c S v V v v V i R V R I eVT vBE . Example 5.4 (DC analysis) V I k V I I I mA I I mA mA mA R k V I V V V C C B E C C E E E E E .
Introduction of Chemical Reaction Engineering Introduction about Chemical Engineering 0:31:15 0:31:09. Lecture 14 Lecture 15 Lecture 16 Lecture 17 Lecture 18 Lecture 19 Lecture 20 Lecture 21 Lecture 22 Lecture 23 Lecture 24 Lecture 25 Lecture 26 Lecture 27 Lecture 28 Lecture
Ensure the NUU Riptide is fully charged before using as a USB speaker. Your computer's USB port may not be able to supply enough power to charge and play music at the same time. h & i Aux-In & Aux-Out The NUU Riptide can connect to any device with a 3.5mm headphone 13 Riptide_UserManual_Final.indd 14 7/17/2014 3:07:13 PM
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Partial Di erential Equations MSO-203-B T. Muthukumar tmk@iitk.ac.in November 14, 2019 T. Muthukumar tmk@iitk.ac.in Partial Di erential EquationsMSO-203-B November 14, 2019 1/193 1 First Week Lecture One Lecture Two Lecture Three Lecture Four 2 Second Week Lecture Five Lecture Six 3 Third Week Lecture Seven Lecture Eight 4 Fourth Week Lecture .
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electromagnetic compatibility and product safety. 5 3. Test plan Before proceeding with any testing, the vendor needs to submit a test plan for approval by the designated Project Officer, who will assess the test plan and notify the vendor in writing as to whether the test plan has been approved or rejected. If rejected or incomplete, the Project Officer will state the reason and allow the .