4. SPICE LEVEL 1 MOSFET MODEL - Pub.ro
4. SPICE LEVEL 1 MOSFETMODELInstitute ofMicroelectronicSystemsFour mask layout and cross section of a Nchannel MOS Transistor.4: MOSFET ModelInstitute ofMicroelectronicSystems2
Layout and cross section of a n-well CMOStechnology.Institute ofMicroelectronicSystems4: MOSFET Model3Equations for the different operation regionsI DS 0(VGS VTH )I DS KP(W Leff )VDS [2(VGS VTH ) VDS ](1 LAMBDA VDS )2(0 VDS VGS VTH )I DS KP(W Leff )(VGS VTH )2 (1 LAMBDA VDS )2(0 VGS VTH VDS )Where the threshold voltage is given by:(VTH VT 0 GAMMA 2 PHI VBS 2 PHI)and the channel length:Leff L 2 LD4: MOSFET ModelInstitute ofMicroelectronicSystems4
Where L is the length of the polysilicon gate and LD is the gateoverlap of the source and drain.The elements in the large signal MOSFET model are shown inthe following figure.Institute ofMicroelectronicSystems4: MOSFET Model5MOSFET SPICE PARAMETERS.Parameter NameSPICE SymbolAnalytical SymbolUnitsChannel lengthLeffLMPoly gate lengthLLgateMLateral diffusion/Gate-source hreshold voltage/Zero-bias thresholdVTOVTOVChannel-lengthmodulation parameterLAMBDAλnV-1Bulk threshold/Backgate effect parameterGAMMAγnV1/2PHI-φPVSurface potential/Depletion drop ininversion4: MOSFET ModelInstitute ofMicroelectronicSystems6
Specifying MOSFET Geometry in SPICE.Mname D G S B MODname L W AD AS PD PS NRD NRS 4: MOSFET ModelInstitute ofMicroelectronicSystems7LEVEL 1 MOSFET MODEL PARAMETERS.MODEL MODname NMOS/PMOS VTO KP GAMMA PHI LAMBDA RD RS RSH CBD CBS CJ MJ CJSW MJSW PB IS CGDO CGSO CGBO TOX LD where:NMOS/PMOS- MOSFET type.VTO- Threshold voltage (V)KP- Transconductance parameter (A/V2)GAMMA- Bulk threshold parameter (V1/2)PHI- Surface potential (V)LAMBDA- Channel length modulation parameter (V-1)RD- Drain resistance (Ω)4: MOSFET ModelInstitute ofMicroelectronicSystems8
LEVEL 1 MOSFET MODEL PARAMETERS.RS- Source resistance (Ω)RSH- Sheet resistance of the drain/source diffusions (Ω/ )CBD- Zero bias drain-bulk junction capacitance (F)CBS- Zero bias source-bulk junction capacitance (F)MJ- Bulk junction grading coefficient (dimensionless)PB- Built-in potential for the bulk junction (V) With CBD, CBS, MJ and PB, SPICE computes the voltagedependences of the drain-bulk and source-bulk capacitances:C BD (VBD ) 4: MOSFET ModelCBD(1 VBD PB )MJC BS (VBS ) CBS(1 VBS PB )MJInstitute ofMicroelectronicSystems9Large-signal, charge-storage capacitors ofthe MOS device.4: MOSFET ModelInstitute ofMicroelectronicSystems10
LEVEL 1 MOSFET MODEL PARAMETERS.CJ- Zero bias planar bulk junction capacitance (F/m2)CJSW- Zero bias sidewall bulk junction capacitance (F/m)MJSW- Sidewall junction grading coefficient (dimensionless) If CJ, CJSW, and MJSW are given, a more accurated simulationof these capacitances is performed using the following equations:C BD (VBD ) CJ ADCJSW PD MJ(1 VBD PB ) (1 VBD PB )MJSWC BS (VBS ) CJ ASCJSW PS MJ(1 VBS PB ) (1 VBS PB )MJSW4: MOSFET ModelInstitute ofMicroelectronicSystems11Bottom and Sidewall components of thebulk junction capacitors.Bottom ABCDSidewall ABEF BCFG DCGH ADEH4: MOSFET ModelInstitute ofMicroelectronicSystems12
LEVEL 1 MOSFET MODEL PARAMETERS.IS- Saturation current of the junction diode (A)CGDO- Overlap capacitance of the gate with drain (F)CGSO- Overlap capacitance of the gate with source (F)CGBO- Overlap capacitance of the gate with bulk (F)TOX- Gate oxide thickness (m)LD- Lateral diffusion (m)4: MOSFET ModelInstitute ofMicroelectronicSystems13Overlap Capacitances of an MOS transistor.(a) Top view showing the overlap between the source or drainand the gate. (b) Side view.4: MOSFET ModelInstitute ofMicroelectronicSystems14
Example of MOSFET model parametersvalues.4: MOSFET ModelParameter NameN Channel MOSFETP Channel MOSFETUnitsGate oxide thickness TOX150150AngstromsTransconductanceparameter KP50 x 10-625 x 10-6A/V2Threshold voltage1.0-1.0VChannel-lengthmodulation parameterLAMBDA0.1/L (L in µm)0.1/L (L in µm)V-1Bulk threshold parameterGAMMA0.60.6V1/2Surface potential PHI0.80.8VGate-Drain overlapcapacitance. CGDO5 x 10-105 x 10-10F/mGate-Source overlapcapacitance. CGSO5 x 10-105 x 10-10F/mZero-bias planar bulkdepeltion capacitance CJ10-43 x 10-4F/m2Zero-bias sidewall bulkdepletion capacitanceCJSW5 x 10-103.5 x 10-10F/mBulk junction potential PB0.950.95VPlanar bulk junctiongrading coefficient MJ0.50.5Sidewall bulk junctiongrading coefficient MJSW0.330.33Institute ofMicroelectronicSystems15
4: MOSFET Model 9 Institute of Microelectronic Systems LEVEL 1 MOSFET MODEL PARAMETERS. RS-Source resistance (Ω)RSH-Sheet resistance of the drain/source diffusions (Ω/ )CBD-Zero bias drain-bulk junction capacitance (F)CBS-Zero bias source-bulk junction capacitance (F)MJ-Bulk junction grading coefficient (dimensionless)PB-Built-in potential for the bulk junction (V)
RIT MOSFET SPICE Parameters Page 11 Rochester Institute of Technology Microelectronic Engineering SPICE LEVEL-1 PARAMETERS FOR MOSFET (cont.) 1. LEVEL 1 Shichman-Hodges Model (If not specified the default is LEVEL 1) 2. VTO zero bias threshold voltage (Do not use, let SPICE calculate from Nsub,TOX
MOSFET Cross Section. 9/14/2015 2 Power MOSFET in OhmicRegion MOSFET Static Characteristics. 9/14/2015 3 MOSFET Depletion capacitance MOSFET Equivalent Circuit. . Neglect semiconductor device capacitances, MOSFET switching times, etc. Neglect conduction losses Neglect ripple in inductor current and capacitor voltage. 9/14/2015 .
SiC MOSFET is the optimal fit for High Power, High Frequency and High Temperature applications SiC MOSFET. SiC MOSFET Driving Requirements 14 Driving a SiC MOSFET is almost as easy as driving a silicon MOSFET: Just need V GS 20V to get the right R DS(on)
Standard SPICE models: Diode, BJT, MOSFET, JFET and MESFET CMC and other models: BJT –HICUM/L2/L0 MOSFET –EKV2.6 Qucs-S/Xyce Standard SPICE models: Diode, BJT, MOSFET, JFET and MESFET CMC and other models: BJT –VBIC 1.3, FBH HBT_X, HICUML0/L2, MEXTRAM. MOSFET –BSIM3, BSIM4, BSIM6, BSIM_SOI, BSIM_CMG, MVS, PSP Verilog-A ADMS generated models
–common semiconductor devices: diode, BJT, FET Advanced Topics in VLSI Systems 3 . SPICE History . 1976 SPICE 2D New MOS Models 1979 SPICE 2E Device Levels (R. Newton appears) 1980 SPICE 2G Pivoting (ASV appears) Advanced Topics in VLSI Systems . 4 . SPICE History
This is designed for integrated circuit design with special device models. Œ RAD-SPICE Š supplied by Meta-Software. This is for simulating circuits subjected to ionizing radiation. Œ IG-SPICE Œ supplied by A. B. Associates. Œ Cadence-SPICE Š supplied by Cadence Design Œ SPICE-Plus Š supplied by Valid Logic 6 What is SPICE OPUS ?
.lib .sub .mod 1.1.1 Schnelle Lösung mit Spice-Text in Simulationsoberfläche Für die schnelle Anwendung wird einfach die Spice-Datei als Spice-Befehl in die Schema-tic-Oberfläche hineinkopiert, siehe nachfolgende Abbildung Abb. 1.2: Abb. 1.2: Spice-Modelldatei als Spice-Directive hineinkopiert in die Simulationsoberfläche. Man
MOSFET models are either p-channel or n-channel models; they are classified according to level, such as Level 1 or Level 50. This chapter covers the design model and simulation aspects of MOSFET models, parameters of each model level, and associated equations. MOSFET diode and MOSFET capacitor model parameters and equations are also described.
