A Review Of The 67th Ieee InteRnAtionAl ElectRon Devices M

1y ago
6 Views
2 Downloads
4.36 MB
56 Pages
Last View : 1m ago
Last Download : 2m ago
Upload by : Jewel Payne
Transcription

JANUARY 2022 VOL. 29, NO. 1 ISSN: 1074 1879TableofContentsTECHNICAL BRIEFS 1 2021 IEEE International Electron DevicesMeeting (IEDM) 2021 IEEE International Flexible ElectronicsConference (IFETC-3) 2021 IEEE Electron Devices Technology andManufacturing Conference (EDTM) 2021 IEEE International Interconnect TechnologyConference (IITC) 2021 IEEE International Physics ReliabilitySymposium (IRPS)UPCOMING TECHNICAL MEETINGS 22 6th IEEE Electron Devices Technology andManufacturing Conference (EDTM) 34th IEEE International Conference onMicroelectronic Test Structures (ICMTS) 2022 IEEE International Memory Workshop (IMW)SOCIETY NEWS 25 Message from Editor-in-Chief EDS Board of Governors Meeting—December 2021 Message from EDS Vice President of Regionsand Chapters Congratulations to the 2021 IEEE EDS Award Winners! IEEE EDS Fellows Elected in 2021 New EDS Distinguished Lecturers Call for Nominations—EDS Student Fellowshipsfor 2022YOUNG PROFESSIONALS 32 Interviews with Dr. Qianqian Huang andDr. Harshit AgarwalWOMEN IN ENGINEERING 35 Hui-Ying Yang—Material Sciences in Serviceof Society DevelopmentCHAPTER NEWS 37 IEEE EDS Malaysia COVID-19 Awareness Program Bridging Digital Inequalities Amongst the UrbanPoor Communities in Malaysia STEM Outreach: Let’s Code with Microbit ED Malaysia Chapter Research Grant WritingWorkshop and Membership DriveREGIONAL NEWS 39EDS MEETINGS CALENDAR 54EDS VISION, MISSION AND FIELD OF INTERESTSTATEMENT 56EDITOR-IN-CHIEF: DANIEL TOMASZEWSKITechnical BriefsA Review of the 67thIEEE International ElectronDevices MeetingMeng-Fan (Marvin) Chang, IEDM 2021 Publicity ChairSrabanti Chowdhury, IEDM 2021 Publicity Co-ChairEdited by Daniel Tomaszewski, EDS Newsletter Editor-in-Chief,and Manoj Saxena, EDS Newsletter Associate Editor-in-ChiefThe annual IEEE IEDM conference (www.ieee-IEDM.org),sponsored by the IEEE Electron Devices Society, is theworld’s largest, most influential forum for the unveiling ofbreakthroughs in transistorsand related micro/nanoelectronics devices. At IEDM each year,the world’s best scientists and engineers in nano/microelectronicsgather to participate in a technical program.The 67th IEEE IEDM was scheduled for 11–15 December 2021 atthe Hilton San Francisco Union Square Hotel. The main theme of the67th annual IEEE IEDM was “Devices for a New Era of Electronics:From 2D Materials to 3D Architectures.” The Conference was held inperson with online access to recorded content afterward.“This year the IEEE IEDM conference features a rich collection ofpresentations on topics that are on everyone’s minds. Among themare the advent of 2D materials, the growing number and diversityof 3D architectural concepts, the rise of system/technology co-optimization, and the possible end of Moore’s Law. Breakthroughs inthese and other areas will be presented and discussed, and ultimately will help the industry and society as a whole move forward,”said Meng-Fan (Marvin) Chang, IEDM 2021 Publicity Chair, IEEE Fellow, Distinguished Professor of Electrical Engineering at National(continued on page 3)Your Comments SolicitedYour comments are most welcome. Please write directly to theEditor-in-Chief of the Newsletter atdaniel.tomaszewski@imif.lukasiewicz.gov.pl

ELECTRON DEVICESNEWSLETTERSOCIETYEDITORIAL STAFFPresidentRavi TodiWestern Digital TechnologiesEmail: rtodi@ieee.orgTreasurerBin ZhaoFreescale SemiconductorEmail: bin.zhao@ieee.orgSecretaryM.K. RadhakrishnanNanoRelEmail: radhakrishnan@ieee.orgJr. Past PresidentFernando GuarinGlobalFoundriesEmail: fernando.guarin@ieee.orgSr. Past PresidentSamar SahaProspicient DevicesEmail: samar@ieee.orgVice President of EducationNavakanta BhatIndian Institute of ScienceEmail: navakant@gmail.comVice President of MeetingsKazunari IshimaruKioxia CorporationEmail: kazu.ishimaru@kioxia.comEditor-In-ChiefDaniel TomaszewskiInstitute of Microelectronics and PhotonicsEmail: daniel.tomaszewski@imif.lukasiewicz.gov.plVice President of Membershipand ServicesPatrick FayUniversity of Notre DameEmail: pfay@nd.eduAssociate Editor-in-ChiefManoj SaxenaDeen Dayal Upadhyaya CollegeUniversity of DelhiEmail: msaxena@ieee.orgScandinavia & Central EuropeREGIONS 1–6, 7 & 9Marcin JanickiEastern, Northeastern &Lodz University of TechnologySoutheastern USAEmail: janicki@dmcs.pl(Regions 1, 2 & 3)Rinus LeeUnited Kingdom, MiddleTEL Technology Center, AmericaEast & AfricaEmail: rinuslee@ieee.orgStewart SmithCentral USA & CanadaScottish Microelectronics Centre(Regions 4 & 7)Email: stewart.smith@ed.ac.ukMichael AdachiWestern EuropeSimon Fraser UniversityMike SchwarzEmail: mmadachi@sfu.caMittelhessen University ofSouthwestern & Western USAApplied Sciences(Regions 5 & 6)Email: mike.schwarz1980@Muhammad Mustafa Hussaingooglemail.comUniversity of California—BerkeleyEmail: MuhammadMustafa.REGION 10Hussain@kaust.edu.saAustralia, New Zealand &South East AsiaLatin America North (Region 9)Sharma Rao BalakrishnanJoel Molina ReyesUniversiti Sains Islam MalaysiaINAOEEmail: sharma@usim.edu.myEmail: jmolina@inaoep.mxNorth East and East AsiaTuo-Hung HouLatin America South (Region 9)National Yang Ming Chiao TungPaula Ghedini Der AgopianUniversityUNESP, Sao Paulo State UniversityEmail: thhou@mail.nctu.edu.twEmail: paula.agopian@unesp.brVice President of Publicationsand ProductsJoachim BurghartzInstitute for MicroelectronicsStuttgartEmail: burghartz@ims-chips.deVice President of Regions/ChaptersMurty PolavarapuSpace Electronics SolutionsEmail: murtyp@ieee.orgVice President of StrategicDirectionsPaul BergerThe Ohio State UniversityEmail: pberger@ieee.orgVice President of TechnicalCommitteesJohn DallessaseUniversity of Illinois at UrbanaChampaignEmail: jdallesa@illinois.eduIEEE prohibits discrimination, harassment, and bullying. For more information,visit -26.html.REGION 8Eastern EuropeKateryna ArkhypovaIRE NASUEmail: arkhykate@ieee.orgEDS Board of Governors (BoG)Elected Members-at-LargeElected for a three-year term (maximum two terms) with ‘full’ voting privileges2021 Term 2022 Term 2023 TermPaul Berger(1) Constantin Bulucea (1) Roger BoothNavakanta Bhat(2) Daniel Camacho(1) Xiojun GuoMerlyne De Souza (1) John Dallesasse(1) Edmundo A. Gutierrez-D.Kazumari Ishimaru (1) Mario Lanza(1) Francesca IacopiWilliam (Bill) Nehrer (1) Geok Ing Ng(1) Benjamin IniguezMurty Polavarapu (2) Claudio Paoloni(1) P. Susthitha MenonCamilo Velez Cuervo (1) Hitoshi Wakabayashi (1) Manoj SaxenaSumant Sood(2)(1)(2)(1)(2)(1)(2)(2)South AsiaSoumya PanditUniversity of CalcuttaEmail: soumya pandit@ieee.orgContributions WelcomeReaders are encouraged to submit news items concerning the Society andits members. Please send your ideas/articles directly to either Editor-inChief or the Regional Editor for your region. The email addresses of allRegional Editors are listed on this page. Email is the preferred form ofsubmission.Newsletter DeadlinesIssueDue DateOctoberJanuaryAprilJulyJuly 1stOctober 1stJanuary 1stApril 1stThe EDS Newsletter archive can be found on the Society web site athttp://eds.ieee.org/eds-newsletters.html. The archive contains issues fromJuly 1994 to the present.IEEE Electron Devices Society Newsletter (ISSN 1074 1879) is published quarterly by the Electron Devices Society of the Institute of Electrical and ElectronicsEngineers, Inc. Headquarters: 3 Park Avenue, 17th Floor, New York, NY 10016–5997. Printed in the U.S.A. One dollar ( 1.00) per member per year is included inthe Society fee for each member of the Electron Devices Society. Periodicals postage paid at New York, NY and at additional mailing offices. Postmaster: Sendaddress changes to IEEE Electron Devices Society Newsletter, IEEE, 445 Hoes Lane, Piscataway, NJ 08854.Copyright 2022 by IEEE: Information contained in this Newsletter may be copied without permission provided that copies arenot used or distributed for direct commercial advantage, and the title of the publication and its date appear on each photocopy.2IEEE Electron Devices Society Newsletter January 2022Promoting Sustainable ForestrySFI-01681

A Review of the 67thIEEE International Electron Devices Meeting(continued from page 1)Tsing Hua University, and Director ofCorporate Research at TSMC. “New,fast-growing electronics applicationsoften require novel semiconductorsolutions,” said Srabanti Chowdhury, IEDM 2021 Publicity Vice Chairand Associate Professor of ElectricalEngineering at Stanford University.“With 3D technologies offering manyintriguing ways to get around scalingissues, they open up new and exciting possibilities for highly integratedsystems with far greater capabilities,”she added.When organizing the Conference, great emphasis was placed oneducational opportunities. “As the COVID-19 pandemic has demonstrated, the world is becoming increasingly reliant on electronic technologies.The good news is that the IEDM Tutorials and Short Courses will provide attendees with the invaluableknowledge and information neededto advance the state-of-the-art in critical areas of the field,” said Meng-Fan(Marvin) Chang. “The opportunityto engage with the world’s technicalleaders in these highly specializedareas is one of the hallmarks of theIEDM conference,” he added. “TheIEDM Tutorials and Short Coursesrepresent a great opportunity to explore evolving areas of the field, withtopics that include novel materialsand device types; advances in process and packaging technologies;new design approaches; and muchmore,” said Srabanti Chowdhury.Except for the Tutorials and ShortCourses, the Conference technicalprogram included plenary and regular talks, the evening panel, focussessions, a supplier exhibit, IEEEEDS award presentations and otherevents highlighting leading work inmore areas of the field than any otherconference. The events of the 67thIEDM are briefly reported below.TutorialsThe five-day Conference programstarted on 11 December 2021 withsix tutorials. The 90-minute Saturdaytutorial sessions on emerging technologies have become a popular andgrowing part of the IEEE IEDM. Theyare presented by experts in the fieldto bridge the gap between textbooklevel knowledge and leading-edgecurrent research, and to introduce attendees to new fields of interest. Thefollowing tutorials were held duringthe time-frame of the 67th IEDM: Beyond the FinFET Era: Challenges and Opportunities for CMOSTechnology; Kai Zhao (IBM)presented some of the recentadvancements in nanosheet technology which make it the bestcandidate beyond FinFETs.K. Zhao reviewed the latest research directions for device architectural options beyondnanosheet and the corresponding challenges and opportunities. TCAD-Based DTCO and STCO;Asen Asenov (Glasgow University) introduced the key conceptsof Design-Technology Co-Optimization (DTCO) and System-Technology Co-Optimization (STCO)and the corresponding DTCO/STCO tools and flows originally developed by Gold StandardSimulations (GSS) and now marketed by Synopsys after the acquisition of GSS in 2016. Theconcepts were illustrated with examples including both FinFETand PDSOI technologies.A. Asenov described how theDTCO and STCO can be used tomake critical decisions regardingfuture technology generations. 6G Technology Challenges fromDevices to Wireless Systems;Aarno Pärssinen (Oulu University) addressed many aspects ofimplementation of radio systemsfor anticipated 6G requirements.Principles of wireless communications systems were analyzedagainst link capacity and range.The challenges of RF transceivers with regard to circuit and device aspects were explored. A.Pärssinen provided insight intothe challenges of present and future technologies at different hierarchies and considered thetrade-offs of next-generationcommunication. Selective and Atomic-Scale Processes for Advanced Semiconductor Manufacturing; RobertClark (Tokyo Electron) reviewedthe post-Dennard-style trends indevice scaling. He outlined forces driving 3D integration and theeffect of these changes on manufacturing technologies. Multi‐patterning and atomic scaleprocesses (ALD, ALS) used for10nm and beyond manufacturing were introduced. Selectiveprocessing including ASD wasexplained. This emerging technology enables new device nodesand integration schemes. Finally,a view of how IC manufacturingwill continue to evolve through3D monolithic and heterogeneous integration was presented. Machine Learning for Semiconductor Device and CircuitModeling; Elyse Rosenbaum(University of Illinois, UrbanaChampaign) focused on Machine Learning (ML) models thatare especially suitable for deviceand circuit modeling. She reviewed prior works that appliedML to parameter extraction,TCAD, device modeling or circuitmodeling. GaN Power Device Technologyand Reliability; Dong Seup LeeJanuary 2022 IEEE Electron Devices Society Newsletter3

(Texas Instruments) introduceda broad overview of GaN power device technology. Basics ofGaN, including polarization, device structure, and fabricationprocess were covered. Variousreliability were reviewed, starting from intrinsic device levelto real applications. The tutorial concluded with a discussion ofthe recent progress and future ofGaN technology.Short CoursesThe IEDM program was continuedwith two short courses held on Sunday, 12 December 2021. In contrastto the tutorials, the full-day shortcourses are focused on a singletechnical topic. They offer the opportunity to learn about important areasand developments, and to networkwith global experts. The followingtwo short courses were held duringthe time-frame of the 67th IEDM: Future Scaling and IntegrationTechnology, organized by DechaoGuo (IBM Research) with the following presentations: Processes and Materials Engineering Innovations forAdvanced Logic TransistorScaling; Benjamin Colombeau(Applied Materials) discussedprocess technology and materials engineering approachesused to extend FinFET scaling more specifically for critical FEOL modules (channel,junction, gate and contact). Hediscussed benefits and challenges of GAA Nanosheetarchitecture for the forthcoming generation of advancedCMOS. He also highlightedhow novel co-optimized processes and materials innovations play a critical role toaddress integration and deviceperformance challenges. Interconnect Resistivity: NewMaterials; Daniel Gall (Rensselaer Polytechnic Institute) presented recent research resultsfocusing on new materials for4high-conductivity narrow interconnects that outperformCu. The speaker discussedmetals with a small mean freepath of electrons to rendertheir scattering at surfaces andgrain boundaries negligible,2D materials as new liner/barrier layers which maximize theconductor cross-sectional areaand facilitate specular surfacescattering, and topologicalmetals with protected surfacestates that suppress electronscattering. Metrology and Material Characterization for the Era of 3DLogic and Memory; Roy Koret(Nova Ltd.) presented metrology platforms that havematured during the 2D integration era. The course covered among other topics, ause of Critical DimensionScanning Electron Microscopy(CDSEM), Transmission Electron Microscopy (TEM), X-rayPhotoelectron Spectroscopy (XPS), X-ray Fluorescence(XRF), Atomic Force Microscopy (AFM), Optical Scatterometry (OCD), and a useof hybrid approach and Machine L earning in high volume manufacturing. Beyond FinFET Devices: GAA,CFET, 2D Material FET; ChungHsun Lin (Intel) presented thestatus of Beyond FinFET solutions, their engineering opportunities and challenges forhigh volume manufacturing.He discussed GAA transistors,complementary FETs (CFETs),and atomic channel FETs with2D materials. The GAA transistor is the most pragmatic architecture in the near term toenable incremental Contacted Poly Pitch and gate lengthscaling. CFET enables additional cell area scaling andheterogeneous integration forhigh mobility channel enablement. 2D material FET pro-IEEE Electron Devices Society Newsletter January 2022vides the ultimate gate lengthscaling with high mobilitychannel capability. Heterogenous Integration Using Chiplets & Advanced Packaging; MadhavanSwaminathan (Georgia Tech)addressed among others advanced packaging platformsavailable for 2.5D and 3D integration, technologies availabletoday and emerging ones, andan effect of the heterogeneityon signal integrity and powerdelivery. The presenter compared the technologies alongwith details on construction,line dimensions, form factor,bandwidth density, data rate,power delivery metrics, thermal management solutions,and system integration potential. Details on emergingtechnologies such as glass interposer were also presented. Design-Technology Co-Optimization/System-TechnologyCo-Optimization; Victor Moroz(Synopsys) discussed DTCOand STCO methodologies applied to advanced CMOS logic and SRAM to explore andquantify different innovationsin design and technology. TheDTCO analysis was applied to(i) CMOS operating at cryogenic temperatures and (ii)the role of transistor variability as the driving force behindindustry transitions from planar MOSFET to FinFET to GAAtechnologies. The STCO analysis was applied to 3D heterogeneous integration requiringresolving interrelated electrical, thermal, stress, and powerdelivery challenges. Emerging Technologies for LowPower Edge Computing, organized by Huaqiang Wu (TsinghuaUniversity) and John Paul Strachan,(Forschungszentrum Jülich) withpresentations: Mobile NPUs for IntelligentHuman/Computer Interaction;

Hoi-Jun Yoo (KAIST) made areview of the status of AI andDeep Neural Network (DNN)SoCs from the viewpoint ofmobile and edge AIs. The optimization methods for mobile DNN accelerators whichtarget low power consumption and high performance,were explained at both hardware-level and software-level. Moreover, he introduced6 lessons learned from over10 years of NPU design experiences. These lessons explained the advantages andtrade-offs of the state-of-theart techniques for not only inference processors but alsomobile training processors. Heshowed the past, current, andfuture of the mobile NPU designs with the lessons and examples of implemented chipsfor various human-computerinteraction (HCI) applicationssuch as emotion recognition,object tracking, GAN, DRL, andothers. Brain-Inspired Strategies forOptimizing the Design of Neuromorphic Sensory-Processing Systems; Giacomo Indiveri(University of Zurich) presented neuromorphic electroniccircuits that directly emulatethe physics of computationused by biological neural processing systems, and braininspired signal processingstrategies to build beyondvon Neumann ultra-low power computing technologies forreal-world sensory-processingedge-computing applications. Memory-Based AI & Data Analytics Solutions; Euicheol Lim(SK Hynix) showed in his talkthe demand of near data processing. With solution examples the speaker explainedwhat architecture for near dataprocessing is feasible. The analog computing in memorythat processes data and pro-cessing in analog cell arrayswere introduced as extremeexamples of near data processing. Material Strategies for Memristor-Based AI Hardwareand their Heterointegration;Jeehwan Kim (MIT) presenteda material strategy to preciselyconfine the conducting pathsin memristors. It allows theoperation of 1R-based crossbar arrays with great programmability. By embedding sucha crossbar array into the edgeof a heterogeneously integrated chip, reconfigurable heterochips with stackability weredemonstrated. They featured(i) memristor crossbar arraysfor non-von Neumann computing and (ii) optical communication between chips viaintegrated LEDs and photodiodes. An outlook of somerecent reconfigurable heterogeneous integration schemesfor future electronicswas made. RRAM Devices for Data Storage and In-Memory Computing; Wei Lu (University ofMichigan) discussed in-memory computing (IMC) systemsbased on an emerging device—resistive-random accessmemory (RRAM). Approaches towards a scalable IMCsystem were introduced toaddress device nonidealitiesand accommodate practical AImodels. Practical Implementationof Wireless Power Transfer; Hubregt Visser (Imec) discussed different buildingblocks of a receiver for ultralow power level long-distancewireless power transfer (WPT)i.e., antenna, rectifier, boostconverter and load. For this,the design steps of a couple ofpractical, remotely poweredapplications like an electricclock, a temperature sensorwith display and a wirelesstemperature and humiditysensor were presented.Plenary SessionThe first point of the IEDM programon Monday, 13 December 2021 wasa plenary session. Three plenarytalks were delivered, namely: The Smallest Engine Transforming Our Future: Our Journey IntoEternity Has Only Begun by KinamKim, Vice Chairman & CEO,Samsung Electronics DeviceSolutions Division, Creating the Future: AugmentedReality, the Next Human-MachineInterface by Michael Abrash,Chief Scientist, Facebook Reality Labs, Quantum Computing Technology by Heike Riel, Head of Science& Technology, IBM Research andIBM Fellow.The plenary session was followedby a number of regular sessions, focus sessions, an Evening Panel anda Career Luncheon. The most newsworthy sessions and papers are briefly presented below.Focus SessionsFive Focus Sessions on key emerging technologies covered a rangeof topics addressing the gaps, challenges and opportunities for newapproaches and technologies, including system-level issues and requirements; benchmarks of currenttechnologies; and R&D directions forthe new materials, devices, circuits,and modeling/manufacturing/testingapproaches needed: Focus Session on Advanced Logic Technology—Stacking of Devices, Circuits, Chips: Design,Fabrication and Metrology Challenges and Opportunities (Session #3, 13 December 2021)3D stacking from the device tothe package level is a growing trendthat will enable the industry to moveto larger, more densely integratedcircuits and systems. It will benefitgreatly from the ability to integrateJanuary 2022 IEEE Electron Devices Society Newsletter5

heterogeneous technologies intoone solution (e.g., CFETs, quantumtechnologies etc.), along with newapproaches to inspection and metrology. These issues were addressed inthe following talks: CFET Design Options, Challenges, and Opportunities for3D Integration, L. Liebmann,TEL Technology Center America 3D Sequential Integration: Applications and Associated KeyEnabling Modules (Design &Technology), P. Batude et al,CEA-Leti/STMicroelectronics/SOITEC/Universite GrenobleAlpes/Universite SavoieMont Blanc Inspection and MetrologyChallenges for 3nm Node Devices and Beyond, T. Shohjohet al, Hitachi/Imec Heterogeneous Integration Enabled by State-of-the-Art 3DICand CMOS Technologies: Design, Cost, and Modeling,X.-W. Lin et al, Synopsys/ICKnowledge Design for 3D Stacked Circuits,P. Franzon et al, North CarolinaState University 3D SoC Integration, Beyond2.5D Chiplets, E. Beyne et al,Imec Foundry Perspectives on2.5D/3D Integration and Roadmap, Douglas C. H. Yu et al,TSMC Focus Session on Emerging Device and Compute Technology—Device Technology for QuantumComputing (Session #14, 14 December 2021)This Session explored R&D directions concerning new materials,devices, circuits, manufacturing andpackaging approaches for QuantumComputing. The following talks concerning these topics were delivered: Si MOS and Si/SiGe QuantumWell Spin Qubit Platforms forScalable Quantum Computing,R. Pillarisetty et al, Intel/TU Delft Material and Integration Challenges for Large-Scale Si6Quantum Computing, M. Vinetet al, CEA-Leti/ CNRS Neel Institute/CEA IRIG/UniversiteGrenoble Alpes High-Fidelity Two and ThreeSpin Operations in Si with Triple Quantum Dots, S. Tarucha,RIKEN Center for QuantumComputing Silicon-Based Quantum Computing: High-Density, HighTemperature Qubits, A.Dzurak, University of NewSouth Wales 3D Integration Technology forQuantum Computer Basedon Diamond Spin Qubits,R. Ishihara et al, Delft University/Fujitsu Quantum Photonics withSnV Centers in Diamond, S.Aghaeimeibodi et al, StanfordUniversity Packaging and IntegrationChallenges in a Superconducting-Qubit-Based Quantum Computer, M. Giustina,Google Focus Session on Memory Technology/Advanced Logic Technology—STCO for Memory-CentricComputing and 3D Integration(Session #25, 15 December 2021)As integrated circuits becamemore powerful and offered morefunctionality, the line started to blurbetween where a device ended andwhere a circuit began. A need wasseen to design devices and circuitssynergistically, a move called designtechnology co-optimization (DTCO).Now, taking the idea of synergisticdesign a step further, system-technology co-optimization (STCO) is agrowing trend. The approach encompasses leading-edge 3D conceptsand heterogeneous technologies,and it is essential to enable newways of computing, and to optimizethe performance of new computingsystems. One example is computingin-memory (CIM) for artificial intelligence (AI)-based applications. Whereand how data is stored in a CIM architecture is critical to its performance.IEEE Electron Devices Society Newsletter January 2022The presentations below were aboutthese matters: Human-Centric Computing, J.M. Rabaey, University of California at Berkeley/Imec In-Memory Computing withAssociative Memories: ACross-Layer Perspective, X.Sharon Hu et al, University ofNotre Dame/Rochester institute of Technology/ZhejiangUniversity Monolithic 3D Compute-inMemory Accelerator withBEOL Transistor-Based Reconfigurable Interconnect, Y. Luo,Georgia Institute of Technology/University of Notre Dame The Future of Hardware Technologies for Computing: N3XT3D MOSAIC, Illusion Scaleup,Co-Design, R.M. Radway et al,Stanford University/Facebook Enabling RRAM-Based BrainInspired Computation by CoDesign of Device, Circuit, andSystem, C. Dou et al, ChineseAcademy of Sciences/FudanUniversity Co-Design In High-Performance Computing Systems, J.Moreno et al, IBM Mm-Wave Automotive Radar:From Evolution to Revolution,K. Doris, NXP Semiconductors Focus Session on Sensors,MEMS, and Bioelectronics/Optoelectronics, Displays, and Imaging Systems—Technologies forAR/VR and Intelligent Sensors(Session #35, 15 December 2021)AI and new architectures makepossible new types of sensors for agrowing number of use cases. Theywere discussed in the talks listed below: Integrating Taste Technologywith Audiovisual Media,H. Miyashita, Meiji University A Miniature Electronic Nosefor Breath Analysis, Z. Li et al,National Tsing Hua University/Taiwan Semiconductor Research Institute/ITRI/EnosimBio-tech

Computational Imaging withVision Sensors Embedding InPixel Processing, J.N.P. Martelet al, Stanford AI SoCs for AR/VR User-Interaction, J. Ryu et al, KAIST AR Glasses: Fatigue-Free Optical Engines and Energy-Efficient SLAM Sensors, H.-S. Leeet al, Samsung Focus Session on Emerging Device and Compute Technology/Optoelectronics, Displays, andImaging Systems—TopologicalMaterials, Devices and Systems(Session #38, 15 December 2021)Topological materials, where thesurface is conducting but the bulk portion of the material is an insulator, arebeing investigated for their potential toenable ultra-small devices. This verypromising theme was discussed in: Spin-Charge Interconversionin Topological Insulators andTopological Semimetals forSpin-Orbit Torque Devices, N.Samarth et al, PennsylvaniaState University Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor,M.S. Fuhrer et al, ARC Centre of Excellence in FutureLow-Energy Electronics Technologies/Monash University/University of New SouthWales/ University of Wollongong/RMIT University Essential Design Criteria forTopological Electronics andSpintronics, G. J. de Coster etal, Army Research Laboratory/University of Illinois at Urbana-Champaign Topological Semimetals forElectronic Devices, A. Rashidi,et al, University of Californiaat Santa Barbara Semiconductor TopologicalNanophotonics, Y. Ota et al,Keio University/University ofTokyo Symmetry-Enabled New Microlasers, L. Feng et al, University of PennsylvaniaRegular SessionsAmong the papers presented duringthe regular sessions held from 13–15December, a few general tracks maybe distinguished. These tracks arebriefly characterized below. Noteworthy papers are briefly presented.A. CMOS Technology: New Waysto Advance Moore’s Law3D at the Device Level: CMOS transistors are built in a lateral, or horizontal, fashion, and countless advancesover decades have shrunk their dimensions so that billions of them cannow be put on a chip, in accordancewith the predictions of Moore’s Law.But shrinking transistors further inorder to boost chip performance andadd new features is difficult and costly. Would orienting them vertically instead of horizontally save space andmake it easier to extend the life ofMoore’s Law?Inspired by trench-based DRAMvertical access transistors, a teamfrom IBM and Samsung describedin Paper #26.1, how they turned transistor architecture on its side, withCMOS devices built using so-calledVertical-Transport Nanosheets (VTFETs) on bulk silicon and with a 45nmgate pitch. The vertical devices offerthe opportunity for continued scaling because gate length and spacersize—two key elements which de-termine gate pitch (the distance between transistors)—can be optimizedin ways that aren’t possible horizontally. Also, the VTFET devices promise to deliver outstanding operatingvoltage and drive current as a resultof reduced electrostatic and parasiticlosses (SS

The annual IEEE IEDM confer - ence (www.ieee-IEDM.org), sponsored by the IEEE Elec-tron Devices Society, is the world's largest, most influen- . JANUARY 2022 VOL. 29, NO. 1 ISSN: 1074 1879 EDITOR-IN-CHIEF: DANIEL TOMASZEWSKI A Review of the 67th ieee inteRnAtionAl electRon Devices Meeting

Related Documents:

May 02, 2018 · D. Program Evaluation ͟The organization has provided a description of the framework for how each program will be evaluated. The framework should include all the elements below: ͟The evaluation methods are cost-effective for the organization ͟Quantitative and qualitative data is being collected (at Basics tier, data collection must have begun)

Silat is a combative art of self-defense and survival rooted from Matay archipelago. It was traced at thé early of Langkasuka Kingdom (2nd century CE) till thé reign of Melaka (Malaysia) Sultanate era (13th century). Silat has now evolved to become part of social culture and tradition with thé appearance of a fine physical and spiritual .

On an exceptional basis, Member States may request UNESCO to provide thé candidates with access to thé platform so they can complète thé form by themselves. Thèse requests must be addressed to esd rize unesco. or by 15 A ril 2021 UNESCO will provide thé nomineewith accessto thé platform via their émail address.

̶The leading indicator of employee engagement is based on the quality of the relationship between employee and supervisor Empower your managers! ̶Help them understand the impact on the organization ̶Share important changes, plan options, tasks, and deadlines ̶Provide key messages and talking points ̶Prepare them to answer employee questions

Dr. Sunita Bharatwal** Dr. Pawan Garga*** Abstract Customer satisfaction is derived from thè functionalities and values, a product or Service can provide. The current study aims to segregate thè dimensions of ordine Service quality and gather insights on its impact on web shopping. The trends of purchases have

Chính Văn.- Còn đức Thế tôn thì tuệ giác cực kỳ trong sạch 8: hiện hành bất nhị 9, đạt đến vô tướng 10, đứng vào chỗ đứng của các đức Thế tôn 11, thể hiện tính bình đẳng của các Ngài, đến chỗ không còn chướng ngại 12, giáo pháp không thể khuynh đảo, tâm thức không bị cản trở, cái được

67th ave 59th ave 51st ave 27th ave 7th st 16th st 24th st 32nd st 40th st 48th st 56th st thomas rd indian school rd camelback rd greenway rd bell rd jomax rd deer valley rd union hills dr bell rd greenway rd peoria ave 91st ave 83rd ave 75th ave 67th ave 59th ave 51st ave . se il l a g e p k w y e e woodst s 4 8 h s t s 4 1 s t a ve s 2 n d .

Le genou de Lucy. Odile Jacob. 1999. Coppens Y. Pré-textes. L’homme préhistorique en morceaux. Eds Odile Jacob. 2011. Costentin J., Delaveau P. Café, thé, chocolat, les bons effets sur le cerveau et pour le corps. Editions Odile Jacob. 2010. Crawford M., Marsh D. The driving force : food in human evolution and the future.