Comparison Of Singulation Techniques - Institute Of Electrical And .

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IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Comparison of SingulationTechniquesElectronic Packaging Society, Silicon Valley ChapterSept. 28, 2017ANNETTE TENGSept 28, 20171Definition of omex-ind.com21

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Assembly Flow for SingulationWashwaferWafer( 0.70mm) Apply frontside tapeRough grindFine grindRemovefront sidetapeSingulate/dicingBackendassemblyMount dicingtapeon backsideof waferAteng@promex-ind.com9/28/20173Wafer Singulation TechniquesPlasma dicingThermal Laser SeparationStealth Laser DicingLaser DicingSaw with BladeScribe & 006200720082009201020112012201320142015201620172

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017 SAW LASER Ablation Stealth TLS PlasmaSept 28, 2017Annetteteng@promex-ind.com5Saw Machines Cut Precision: 0.1umBlade height control:0.1umA t bladeAutobl d wear adjustdj tBroken blade detect10/24/2017www.cpmt.org/scv63

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Saw Blades-18um and upResin bond bladeAteng@promex-ind.comSaw TapeHighNon UVUV-TAPETAPEDiepickAAdhesive StrengthSawUV etteteng@promex-ind.com84

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Dice Before Grindallows for ultrathin diesWafer FrontsidegroovegroovegrooveGrooveDicing tapeBackGrind stress reliefBackgrind tapeWashBackgrind tape10um Si diesTape FlipWafer FrontsideTape and frame10/24/2017Annetteteng@promex-ind.com920-40um dies well establishedinFlashdrivesi DRAM andd Flhdi(Micron, Sandisk, Samsung)25um copper pillars25-40um die thickness6-7um TSV diameterSept 28, 2017www.cpmt.org/scvAnnetteteng@promex-ind.com105

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017VERSATILITY of SAWProfile cutsDAFMultilayer materialMetallized waferg needlesMakingMetallized streetMultilayer materials10/24/201711WAFER THICKNESS CUTOFF FOR LASER AND PLASMASAW5000umSept 28, 2017www.cpmt.org/scvAnnetteteng@promex-ind.com126

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Problems with Saw-Water issues; chipouts;Saw dustSedimentation onbond padsGaAs chipoutInP chipoutSapphire chipoutGalvanic corrosionof Aluminum padsGalvanic corrosionof Aluminum pads1. SAW2. LASER 2a. Ablation 2b. Stealth 2c. Thermal Laser Separation3. PlasmaSept 28, 2017www.cpmt.org/scvAnnetteteng@promex-ind.com147

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Laser SingulationThermalshockSawCoatingLaserablation/ stealthCleaveRemovalofCoatingTape .com15Ablation vs StealthTechnologyAblation(requires coating & washing)Sublimation by irradiating short pulse laserStealth(coating not required)Creating SD (modified) layer by focusing laserinside materialShort pulse laserShort pulselaserCollecting lensCollecting cvGroovingScribingFull cutDAF cutWorkpieceChip separation bySD layer creation Breaking/ExpandAnnetteteng@promex-ind.com168

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017STEALTH DICING on GaAsExample on GaAs mirror waferWafer Thickness: 100um(DP finish), Chip size 5x5mm, Feed speed 240mm/secTop sideBack sideCH1CH2Chip SeparationMethodSD Irradiation SideSD Irradiation SideTape expand 3 pointbreaking1passSD Irradiation SideSD Irradiation Side2passTape expandonlySD Irradiation SideSD Irradiation Side3passTape expandonly17 2014 Disco Corporation.InP Laser scribe & Break vs Through CutLASERApply Protective film110 mProtectivefilmWash off protective filmInPInPDicing tapeMetal filmDicing tapeLaser GroovingExpand on stretchable dicing tapeDicing tapeSlitDicing tapeBreaking processMetal filmProtective film110 mLASERInPInPDicing tapeLaser Full CutExpand on stretchable dicing tapeShipping formatClean 2015 Disco Corporation.www.cpmt.org/scv189

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Tape Expanding BreakingDiscoDDS2010Expanding-stretchable tapeDie separation will be performed by following the curveon breaking barBreakingDirection of separation-stretchable tapeVacuum19 2013 Disco Corporation.InP Ablation Fullcut vs. Scribing BreakingThickness 100um, Index 0.25 x 0.25mm, street width 20umFreque Feed KerfPa Powerncyspeed widthss [W][kHz] [mm/s] [µm]MachineDFL7160Type-D1F-1, BSS34.030150Laser full cut Photographs*Front sideCross section10.5*Photographs were taken with the parameter setting sample.MachineDAL7020Type-S1No. 3-50Pas Power[[W]]s10.6 2015 Disco Corporation.www.cpmt.org/scvFrequen Feedcyspeed[kHz][mm/s]100180Kerfwidth[µm]Laser scribing Photographs*Front sideCross section8.5Processed depth: 49.8 µm2010

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Stealth Dicing on InPThickness: 200um, Index: 2mm x 2mmTop sideCross-sectionBack sideX sideY sideMapping passSD ConditionCH1CH2Feed speed [mm/s]Power [W]DF [ m][ ]ProcessFlowDC tape mountFront 5-7Laser backsideUV frontsideDetape topsideFlip & ExpandUVTape mount on back sideGrip ring21 2015 Disco Corporation.Laser Dicing Technologies vs. materials/applicationsProcessMaterialDeviceLaser grooving blade full cutLow-kCPU & LogicLaserfull cutSi, Ge, SiC, GaAsMetal Substrate, DAFSolar Cells/Power DeviceLED, Power DeviceRF Device, NAND FlashLaser scribe BreakSapphireAlumina CeramicsLED, SensorsStealth dicingSilicon, Sapphire, SiCGlass, FuSi, InP, GaAsMEMS/RFID/Linear SensorLED, Power DeviceMedical, etcVia HoleLitaO3, LiNb, SOI WaferSAW Device, MEMS 2015 Disco Corporation.www.cpmt.org/scv2211

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Disco Laser Systems (Head Optics)Wafer TypeAblation LaserLow-K GroovingType-F Standard OpticsType-FX BSS6 OpticsSi Full cutType-D BSS3Type M BSS5 (Ultra thin)Type-MGaAs / InP Full cutType-G BSS3GType-D BSS3SDE21GeType-K BSS4SDE03Sapphire Full cutType-F Sapphire OpticsSDE31SiC Full cutType-D BSS3SDE41DAF CutType-A DAF Optics( Use DDS2300 )Glass / LTLN / GaNUnder R&D (see below)SDE33/ SDE12OthersFeasibility for most of Laser processavailable in Japan. Such as VIA, glassdicing, curved shape dicing, LLO etc.Some SD engine are underR&D phase. To be releasedwww.cpmt.org/scvSDE01 / SDE03SDE03R / SDE05/ SDE0623 2013 Disco Corporation.Sept 28, 2017Stealth DicingAnnetteteng@promex-ind.com2412

IEEE Electronics Packaging Society, SCV Chapterwww.cpmt.org/scvSeptember 28, 2017Sept 28, 2017Annetteteng@promex-ind.com25Sept 28, 2017Annetteteng@promex-ind.com2613

IEEE Electronics Packaging Society, SCV ChapterSept 28, 2017September 28, 2017Annetteteng@promex-ind.com27REDUCING KERF ON REDUCING COST & INCREASING PRODUCTIVITY60000005654880NUMBER OF DIES/8" WAFERTotal dies per wafer50000004760000NUMBER OF DIES/12" 800Street width reduction vs yield00.0000.0200.0400.0600.0800.1000.120Street width (mm) added to a 0.250mmx0.200mm die1400012000KERF/street widthTotal number of cutsDiodeLxW0 2500.250x0.200mm10000800060004000Singulation /wafer cost high for smallerdies2000000.020.040.060.080.10.12Street widtrh (mm) added to diodeSept 28, 2017www.cpmt.org/scvAnnetteteng@promex-ind.com2814

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017SMALL DIES MAKERS OF RFID & DIODES ARESept 28, 2017Annetteteng@promex-ind.comTO PLASMA291. SAW 0.2m2. LASER Ablation 1m3. Stealth Dicing 1m4.Plasma 5mSept 28, 2017www.cpmt.org/scvAnnetteteng@promex-ind.com3015

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017 2014, ON Semiconductor,All Rights Reserved31/11IssuesRemoval of FlourinatedresiduesPlasma resistant carriertape32/11www.cpmt.org/scv16

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017PLASMA DICING PROCESS Removalof FresiduesRemovalof PRSawgrooving3310/24/2017ESTABLISHED PLASMA SINGULATION FROM ONSEMI (courtesy of Harry Gee)PRSilicon wafercarrierSi waferFEOLRedistributionSolder bumpIR and Stepperpattern PRPRIR Image ofunderlying metalfrom top foralignment of thestreetPR pattern ofthe street afterexposureSilicon waferBond tocarrier waferWaferBackgrindPlasmasingulationcarrierAfter Plasma etchPRdieEncapsulatiearound diesCarrierremovalWafer probediecarrierRemove PRdieCSPsingulationSept 28, 2017www.cpmt.org/scvLaser markdiecarrierAnnetteteng@promex-ind.com3417

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 20171. SAW 0.2m 2. LASER Ablation 1m3. Stealth Dicing 1m4. Plasma 5mComparisonSept 28, 2017Annetteteng@promex-ind.com35Sidewall Comparison of Saw n LaserLaser ablate and stretchSaw with BladeScribe and BreakSawSept 28, 2017www.cpmt.org/scvAnnetteteng@promex-ind.com3618

IEEE Electronics Packaging Society, SCV ChapterSept 28, 2017September 28, 2017Annetteteng@promex-ind.com37/11Advantages of Plasma Batch process High UPH for tiny dies Narrow Kerf yields more dieper wafer Accuracy of die defined onpassivation Improvement in Die Strength Rounded corner at each die ShapeShotherth thanth rectangulartl Multi Project Wafer(MPW)Pizza cutSept 28, 119

IEEE Electronics Packaging Society, SCV ChapterSeptember 28, 2017Foundry equipment suppliersto assembly.Foundryy Plasma DicinggSuppliers includesPlasmaTherm has partnered withDiscoPanasonicSPTSSept 28, sco Hi-Tec America, Inc.www.discousa.comdamianp@discousa.com & Jordan k@discousa.comSept 28, 2017www.cpmt.org/scvAnnetteteng@promex-ind.com4020

Comparison of Singulation Techniques Electronic Packaging Society, Silicon Valley Chapter Sept. 28, 2017 ANNETTE TENG Sept 28, 2017 1 . Comparison Sept 28, 2017 Annetteteng@promex-ind.com 35 Plasma dicing TLS Sidewall Comparison of Saw Techniques Plasma Stealth Laser Ablation Laser

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