Features And Benefits - LCSC
MH254 Micropower CMOS Unipolar Hall Effect Switch MH254 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding, temperature dependencies, and thermal stress. MH254 is special made for low operation voltage, 1.65V, to active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator, small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer fabrication processing is used to take advantage of low-voltage requirements, component matching, very low input-offset errors, and small component geometries. This device requires the presence of unipolar magnetic fields for operation. The package type is in a Halogen Free version has been verified by third party Lab. Features and Benefits CMOS Hall IC Technology Strong RF noise protection 1.65 to 6V for battery-powered applications Operation down to 1.65V, Unipolar Hall Switch Micro power consumption High Sensitivity for reed switch replacement applications Low sensitivity drift in crossing of Temp. range Ultra Low power consumption at 5uA (Avg) High ESD Protection, HBM 4KV( min ) Totem-pole output Applications Solid state switch Handheld Wireless Handset Awake Switch ( Flip Cell/PHS Phone/Note Book/Flip Video Set) Magnet proximity sensor for reed switch replacement in low duty cycle applications Water Meter PDA PDVD NB Pad PC 112715 Page 1 of 9 Rev. 1.01
MH254 Micropower CMOS Unipolar Hall Effect Switch Ordering Information XXXXXXXXX - X Company Name and Product Category MH:MST Hall Effect/MP:MST Power MOSFET Part number Sorting Code 382 . If part # is just 3 digits, the forth digit will be omitted. Package type Temperature range Temperature Code Part number E: 85 , I: 105 , K: 125 , L: 150 Package type 3, Company Name and Product Category SQ:QFN-3,ST:TSOT-23,SN:SOT-553,SF:SOT-89(5pin) Sorting α,β,Blank . Part No. MH254ESQ Temperature Suffix E (-40 to 85 ) Package Type SQ (DFN-2020) Custom sensitivity selection is available by MST sorting technology Functional Diagram VDD Awake/Sleep Timing Control Offset Cancellation VDD Control Logic Amp Out Hall Sensor GND Note: Static sensitive device; please observe ESD precautions. Reverse V DD protection is not included. For reverse voltage protection, a 100Ω resistor in series with VDD is recommended. MH254, HBM 4KV which is verified by third party lab. 112715 Page 2 of 9 Rev. 1.01
MH254 Micropower CMOS Unipolar Hall Effect Switch Absolute Maximum Ratings At(Ta 25 ) Characteristics Values Unit Supply voltage,(VDD) 7 V Output Voltage,(Vout) 7 V -0.3 V Unlimited Gauss 1 mA Operating temperature range, (Ta) -40 to 85 Storage temperature range, (Ts) -65 to 150 Maximum Junction Temp,(Tj) 150 SQ 540 /W (θJC) SQ 390 /W 230 mW Reverse Voltage , (VDD) (VOUT) Magnetic flux density Output current,(IOUT) (θJA) Thermal Resistance Package Power Dissipation, (PD) SQ Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximumrated conditions for extended periods may affect device reliability. Electrical Specifications DC Operating Parameters：Ta 25 , VDD 1.8V Parameters Supply Voltage,(VDD) Supply Current,(IDD) Test Conditions Operating Min 1.65 Max Units 6 Volts Awake State 1.4 3 mA Sleep State 3.6 7 μA 5 10 μA 1 uA Average Output Leakage Output off Output High Current,(I off) Voltage,(VOH) IOUT 0.5mA(Source) Output Low Voltage,(VOL) IOUT 0.5mA(Sink) Awake mode time,(Taw) Operating Sleep mode time,(TSL) Operating V VDD-0.2 Duty Cycle,(D,C) Electro-Static Discharge Typ 0.2 V 40 80 uS 40 80 mS 0.1 HBM 4 % KV Typical application circuit C1：10nF C2：100pF 112715 Page 3 of 9 Rev. 1.01
MH254 Micropower CMOS Unipolar Hall Effect Switch MH254ESQ Magnetic Specifications DC Operating Parameters：Ta 25 , VDD 1.8V Parameter Symbol Test Conditions Min. Operating Point BOP N pole to branded side, B BOP, Oout On Release Point BRP N pole to branded side, B BRP, Vout Off -20 Hysteresis BHY BOPx - BRPx 10 -50 Typ. Max. -30 Units Gauss -10 Gauss Gauss MH254ESQ Output Behavior versus Magnetic Polar DC Operating Parameters：Ta -40 to 85 , VDD 1.8V to 6V Parameter Test condition OUT Null or weak magnetic field B 0 or B BRP High North pole B Bop(-55 -10) Low SQ Package Out2 Output Voltage in Volts High State Low State N VDSON 112715 BOPN S BRPN 0 Magnetic Flux Density in Gauss Page 4 of 9 Rev. 1.01
MH254 Micropower CMOS Unipolar Hall Effect Switch Performance Graph Typical Temperature(TA) Versus Flux Density 55 55 45 45 35 35 25 25 Flux Density(Gauss） Flux Density(Gauss) Typical Supply Voltage(VDD) Versus Flux Density 15 Bop-N 5 Brp-N -5 -15 -25 15 5 -25 -35 -45 -45 1.65 1.8 2 2.5 2.7 3 -55 3.3 3.5 Supply Voltage(V) 0 25 Current consumption Awake current(uA) 11 sleep current(mA) 9 Average current(uA) 7 5 3 13 Awake current(uA) 11 sleep current(mA) 85 Average current(uA) 9 7 5 3 -20 0 20 40 55 70 -1 1.65 85 2.3 3 3.5 4.2 4.8 5.4 6 Supply Voltage(V) Temperature( ) Typical Supply Voltage(VDD) Versus Output Voltage(VDSON) Typical Temperature(TA) Versus Output Voltage(VDSON) 250.0 250.0 Output Saturation Voltage (mV) Output Saturation Voltage (mV) 70 1 1 200.0 150.0 100.0 50.0 2.3 3 3.5 4.2 4.8 5.4 6 Supply Voltage(V) 112715 55 15 13 0.0 1.65 40 Typical Supply Voltage(VDD) Versus Supply current current(IDD) 15 Current consumption -40 -20 Temperature( ) Typical Temperature(TA) Versus Supply Current(IDD) -1 -40 Brp-N -15 -35 -55 Bop-N -5 200.0 150.0 100.0 50.0 0.0 -40 -20 0 20 40 55 70 85 Temperature( ) Page 5 of 9 Rev. 1.01
MH254 Micropower CMOS Unipolar Hall Effect Switch Typical Supply Voltage(VDD) Versus Leakage Current(IOFF) Power Dissipation versus Temperature(TA) 700 Package power Dissipation(mW) Output Leakage Current(uA) 0.050 0.040 0.030 0.020 0.010 600 500 400 300 200 SQ Package 100 Rθja 543 /w 0 0.000 1.65 2.3 3 3.5 4.2 4.8 5.4 6 -40 0 40 80 120 160 Temperature( ) Supply Voltage(V) Package Power Dissipation The power dissipation of the Package is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, Ta. Using the values provided on the data sheet for the package, PD can be calculated as follows: PD TJ(max) - Ta R j a The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature Ta of 25 C, one can calculate the power dissipation of the device which in this case is 230 milliwatts. PD (ST) 150 C - 25 C 230mW 540 C/ W The 540 /W for the SN package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 230 milliwatts. There are other alternatives to achieving higher power dissipation from the Package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 112715 Page 6 of 9 Rev. 1.01
MH254 Micropower CMOS Unipolar Hall Effect Switch Sensor Location, package dimension and marking MH254ESQ Package SQ Package Hall Plate Chip Location (Top view) NOTES: 1. 1 3 PINOUT (See Top View at left) 1 Pin 1 VDD Pin 2 Output Pin 3 GND Hall Sensor Location 2. 2 1 Controlling dimension: mm; 3. Chip rubbing will be 10mil 4. maximum; Chip must be in PKG. center. MH 254 SQ Package Date Code XX Week Code week 1 2 3 4 5 6 7 8 9 10 11 12 13 code SA SB SC SD SE SF SG SH SI SJ SK SL SM week 14 15 16 17 18 19 20 21 22 23 24 25 26 code SN SO SP SQ SR SS ST SU SV SW SX SY SZ week 27 28 29 30 31 32 33 34 35 36 37 38 39 code TA TB TC TD TE TF TG TH TI TJ TK TL TM week 40 41 42 43 44 45 46 47 48 49 50 51 52 TR TS TT TU TV TW TX TY TZ code TN TO TP TQ EX：2014 Year 8 Week SH 112715 Page 7 of 9 Rev. 1.01
MH254 Micropower CMOS Unipolar Hall Effect Switch QFN2020-3 Tape On Reel Dimension NOTES: 1. 2. 3. Material: Conductive polystyrene; DIM in mm; 10 sprocket hole pitch cumulative tolerance 0.2; Camber not to exceed 1mm in 100mm; Pocket position relative to sprocket hole measured as true position of pocket, not pocket hole; (S.R. OHM/SQ) Means surface electric resistivity of the carrier tape. 4. 5. 6. IR reflow curve Lead Temperature 255 5 10 1 sec ec 5 /s ec 2 5 /s 150 10 90 30 sec 2 Room Temperature (Soldering, 260 /10 sec) SECOND ST Soldering Condition 112715 Page 8 of 9 Rev. 1.01
MH254 Micropower CMOS Unipolar Hall Effect Switch Packing specification: Package Reel Box Carton QFN2020-3 3,000pcs/reel 10 reel/box 2 box/carton Weight 0.13kg 1.4kg 3.7kg Inner box label：Size: 3.4cm*6.4cm Bag and inner box Halogen Free Label Carton label：Size: 5.6 cm * 9.8 cm Bag and inner box Halogen Free Label Combine: When combine lot, one reel could have two D/C and no more than two DC. One carton could have two devices, no more than two; 112715 Page 9 of 9 Rev. 1.01
Micropower CMOS Unipolar Hall Effect Switch MH254 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity . unipolar magnetic fields for operation. . Pad PC . V 112715 Page 2 of 9 Rev. 1.01 MH254 Micropower CMOS Unipolar Hall Effect Switch
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