SEMICONDUCTOR TECHNICAL DATA - QSL
Order this documentby MRF897/DSEMICONDUCTOR TECHNICAL DATAThe RF Line Designed for 24 Volt UHF large–signal, common emitter, class–AB linearamplifier applications in industrial and commercial FM/AM equipment operatingin the range 800–970 MHz.30 W, 900 MHzRF POWERTRANSISTORNPN SILICON Characterized with Series Equivalent Large–Signal Parameters from 800to 960 MHz Silicon Nitride Passivated 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR@ 26 Vdc, and Rated Output Power Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal–Migration Circuit board photomaster available upon request by contactingRF Tactical Marketing in Phoenix, AZ.CASE 395B–01, STYLE 1MAXIMUM RATINGSRatingSymbolValueUnitCollector–Emitter VoltageVCEO30VdcCollector–Emitter VoltageVCES60VdcEmitter–Base VoltageVEBO4.0VdcCollector–Current — ContinuousIC4.0AdcTotal Device Dissipation @ TC 25 CDerate above 25 CPD1050.60WattsW/ CStorage Temperature RangeTstg–65 to 150 CSymbolMaxUnitRθJC1.67 C/WTHERMAL CHARACTERISTICSCharacteristicThermal Resistance, Junction to CaseELECTRICAL CHARACTERISTICS (TC 25 C unless otherwise noted.)SymbolMinTypMaxUnitCollector–Emitter Breakdown Voltage (IC 50 mAdc, IB 0)V(BR)CEO3033—VdcCollector–Emitter Breakdown Voltage (IC 50 mAdc, VBE 0)V(BR)CES6080—VdcEmitter–Base Breakdown Voltage (IE 5 mAdc, IC —Cob142128pFCharacteristicOFF CHARACTERISTICSCollector Cutoff Current (VCE 30 Vdc, VBE 0)ON CHARACTERISTICSDC Current Gain (ICE 1.0 Adc, VCE 5 Vdc)DYNAMIC CHARACTERISTICSOutput Capacitance (VCB 24 Vdc, IE 0, f 1.0 MHz)(continued)REV 6MOTOROLARF DEVICE DATA Motorola,Inc. 1994MRF8971ARCHIVE INFORMATIONARCHIVE INFORMATION Specified 24 Volt, 900 MHz CharacteristicsOutput Power 30 WattsMinimum Gain 10 dB @ 900 MHz, class–ABMinimum Efficiency 30% @ 900 MHz, 30 Watts (PEP)Maximum Intermodulation Distortion –30 dBc @ 30 Watts (PEP)
ELECTRICAL CHARACTERISTICS — continued (TC 25 C unless otherwise mitter Amplifier Power Gain(VCC 24 Vdc, Pout 30 Watts (PEP), Icq 125 mA, f1 900 MHz,f2 900.1 MHz)Gpe10.012.0—dBCollector Efficiency(VCC 24 Vdc, Pout 30 Watts (PEP), Icq 125 mA, f1 900 MHz,f2 900.1 MHz)η3538—%Intermodulation Distortion(VCC 24 Vdc, Pout 30 Watts (PEP), Icq 125 mA, f1 900 MHz,f2 900.1 MHz)IMD—–37–30dBcOutput Mismatch Stress(VCC 26 Vdc, Pout 30 Watts (PEP), Icq 125 mA, f1 900 MHz,f2 900.1 MHz, Load VSWR 5:1 (all phase angles))ψ No Degradation in Output PowerBefore and After Test B1, B2, B3, B4 — Ferrite Bead, Fair Rite #2743019447C1 — 0.8–8.0 pF Trimmer Capacitor, JohansonC2, C3, C23, C24 — 43 pF, 100 mil, ATC Chip CapacitorC4, C5, C18, C19, C21, C22 — 820 pF, 100 mil, Chip Capacitor, KemetC6, C7, C11, C12 — 10 µF, Lytic Capacitor, PanasonicC8, C9, C16, C17 — 100 pF, 100 mil, Chip Capacitor, Murata ErieC10 — 13 pF, 50 mil, ATC Chip CapacitorC13, C14 — 250 µF Lytic Capacitor, MalloryC15 — 1.1 pF, 50 mil, ATC Chip CapacitorC20 — 6.8 pF, 100 mil, ATC Chip CapacitorL1, L2, L3, L4, L5, L6 — 5 Turns 20 AWG, IDIA 0.126″ choke N1, N2 — Type N Flange Mount, Omni Spectra 3052–1648–10Q1 — Bias Transistor BD136 PNPR1, R12 — 39 Ohm, 2.0 WR3, R4, R5, R6 — 4.0 x 39 Ohm, 1/8 W, Chips in Parallel,R3, R4, R5, R6 — Rohm 390–JTL1–TL11 — See PhotomasterBalun1, Balun2, Coax 1, Coax 2 — 2.20″ 50 Ohm, 0.088″ o.d.Balun1, Balun2, Coax 1, Coax 2 — semi–rigid coax, Micro CoaxBalun1, Balun2, Coax 1, Coax 2 — UT–85–M17Board — 1/32″ Glass Teflon, Arlon GX–0300–55–22, εr 2.55Figure 1. MRF897 Broadband Test CircuitMRF8972MOTOROLA RF DEVICE DATAARCHIVE INFORMATIONARCHIVE INFORMATIONFUNCTIONAL CHARACTERISTICS
'() '()1 & * , & - . . . ". / . 1 . % & '() , & - / ! 0 " / ' . ". / ' / "* & . 2 2 2 2 (2 (2 2 % & '()% & '() & * , & - 2 2 2 Figure 4. Output Power versus Supply Voltage 1 . ". /2 Figure 5. Intermodulation versus Output Power , & - - - - % & '() & * , & - - 0 0 . 0 "* 0 . 0 "* Figure 3. Output Power versus Frequency % ! "'() Figure 2. Output Power versus Input Power & * , & - 1 . ". / Figure 6. Power Gain versus Output PowerMOTOROLA RF DEVICE DATA η & . " & * , & - /. % ! "'() Figure 7. Broadband Test Fixture PerformanceMRF8973ARCHIVE INFORMATION . η ! "# . /. . ARCHIVE INFORMATION . ". / & . % & '()1 . ". /
ZinOhmsZOL*Ohms 9 2 9 9 9 9 9 9 9 ARCHIVE INFORMATIONARCHIVE INFORMATIONfMHz% & '()3 6 & 159:; 1% 7 1? 4-:- @1 * 4-? * 5 3 6 & 45 1 A74 7 7 * B4 1? C 8 ;4B 53 6 & 1: ?: ?1A C B1@ ; 5* %C ,: 5 D 345 3 631 & 7-8% & '()NOTE: Zin & ZOL* are givenfrom base–to–base andcollector–to–collector respectively.1 & . " & Figure 8. Series Equivalent Input/Output ImpedancesMRF8974MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS–A– " 1234 /E ' / 0 0 /! ' 0 ' / E ( Q 2 PLU' ' '–B–5K/ ! E GDJNHEC–T– / / ' DIMABCDEGHJKNQUINCHESMINMAX / MILLIMETERSMINMAX / SEATINGPLANECASE 395B–01ISSUE AMOTOROLA RF DEVICE DATAMRF8975
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in differentapplications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola doesnot convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure ofthe Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any suchunintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmlessagainst all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.Motorola andare registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.Literature Distribution Centers:USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.MRF8976 MRF897/DMOTOROLA RF DEVICE DATA*MRF897/D*
SEMICONDUCTOR TECHNICAL DATA . MOTOROLA RF DEVICE DATA Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola a
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However, the semiconductor body can alternatively be of Si or of a high-bandgap com-pound semiconductor material like Ga 2O3 or GaN. [0019] According to atl east one embodiment, the pow-er semiconductor device is a field-effect transistor or an insulated gate bipolar transistor, IGBT for short. For ex-ample, the power semiconductor device .
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Advanced Semiconductor Plating – Key Fundamentals PAN100 / 2 . are multiple types of reactors in use in the semiconductor industry, the specifications for leading products and devices drives the use of a single-wafer fountain reactor. All the . modern semiconductor power supplies.
Semiconductor Optical Amplifiers 9.1 Basic Structure of Semiconductor Optical Amplifiers (SOAs) 9.1.1 Introduction: Semiconductor optical amplifiers (SOAs), as the name suggests, are used to amplify optical signals. A typical structure of a InGaAsP/InP SOA is shown in the Figure below. The basic structure consists of a heterostructure pin junction.File Size: 1MB
basics of semiconductor devices. However, the book does not draw on the student’s knowledge of circuits and can thus be used as a first course in semiconductor devices. Given that the presentation is a bit briefer than most semiconductor device texts on the fundamentals, the book is
Araling Panlipunan . ang ikalawang sangay ng heograpiya – ang heograpiyang pantao na tumutukoy sa pag-aaral ng wika, lahi, relihiyon, at pangkat-etnolingguwistiko sa iba’t ibang bahagi ng daigdig. Ang mga paksa na nakapaloob sa modyul na ito ay sistematikong inayos upang mas madaling maunawaan ang daloy ng iyong pag-aaral. May mga angkop na gawaing inihanda para sa iyo upang maging .
