SN65HVD82 Robust RS-485 Transceiver

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ProductFolderOrderNowTechnicalDocumentsSupport &CommunityTools &SoftwareSN65HVD82SLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017SN65HVD82 Robust RS-485 Transceiver1 Features3 Description This device has robust drivers and receivers fordemanding industrial applications. The bus pins arerobust to ESD events, with high levels of protection toHuman-Body Model, Air-Gap Discharge, and ContactDischarge specifications.1 Bus I/O Protection– 16-kV HBM Protection– 12-kV IEC61000-4-2 Contact Discharge– 4-kV IEC61000-4-4 Fast Transient BurstIndustrial Temperature Range –40 C to 85 CLarge Receiver Hysteresis (60 mV Typical) forNoise RejectionLow-Power Consumption– 1-µA Standby Current– 1-mA Quiescent CurrentSignaling Rate Optimized for 250 kbpsCreate a Custom Design Using the SN65HVD82With the WEBENCH Power DesignerDevice Information(1)PART NUMBER2 Applications The device combines a differential driver and adifferential receiver, which operate from a single 5-Vpower supply. The driver differential outputs and thereceiver differential inputs are connected internally toform a bus port suitable for half-duplex (two-wire bus)communication. The device features a wide commonmode voltage range making the device suitable formulti-point applications over long cable runs. Thedevice is characterized from –40 C to 85 C.SN65HVD82Electrical MetersBuilding AutomationIndustrial NetworksSecurity ElectronicsPACKAGESOIC (8)BODY SIZE (NOM)4.90 mm 3.91 mm(1) For all available packages, see the orderable addendum atthe end of the datasheet.Logic Diagram (Positive Logic)RREDED1236 A7B41An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.

SN65HVD82SLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017www.ti.comTable of Contents12345678Features .Applications .Description .Revision History.Pin Configuration and Functions Absolute Maximum Ratings .ESD Ratings.Recommended Operating Conditions.Thermal Information .Electrical Characteristics.Switching Characteristics .Typical Characteristics .Parameter Measurement Information . 7Detailed Description . 108.1 Overview . 108.2 Functional Block Diagram . 108.3 Feature Description. 108.4 Device Functional Modes. 119Application and Implementation . 139.1 Application Information. 139.2 Typical Application . 1910 Power Supply Recommendations . 2111 Layout. 2111.1 Layout Guidelines . 2111.2 Layout Example . 2212 Device and Documentation Support . 2312.112.212.312.412.5Device Support.Community Resources.Trademarks .Electrostatic Discharge Caution .Glossary .232323232313 Mechanical, Packaging, and OrderableInformation . 244 Revision HistoryChanges from Revision A (July 2015) to Revision BPage Added WEBENCH links to data sheet . 1 Changed pin 6 From: B To: A and pin 7 From: A To: B in Figure 19 . 15Changes from Original (October 2012) to Revision A 2PageAdded Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device FunctionalModes, Application and Implementation section, Power Supply Recommendations section, Layout section, Deviceand Documentation Support section, and Mechanical, Packaging, and Orderable Information section . 1Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD82

SN65HVD82www.ti.comSLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 20175 Pin Configuration and FunctionsD Package16-Pin SOIC(Top View)R18VCCRE27BDE36AD45GNDPin tDriver output or receiver input (complementary to B)B7Businput/outputDriver output or receiver input (complementary to A)D4Digital inputDriver data inputDE3Digital inputDriver enable, active highGND5ReferencepotentialR1RE2Digital inputVCC8SupplyLocal device groundDigital output Receive data outputReceiver enable, active low4.5-V to 5.5-V supply6 Specifications6.1 Absolute Maximum Ratings (1)VCCTJMINMAXUNITSupply voltage–0.57VVoltage range at A or B Inputs–1818VVInput voltage range at any logic pin–0.35.7Voltage input range, transient pulse, A and B, through 100Ω–100100VReceiver output current–2424mA170 CJunction temperatureContinuous total power dissipationTSTG(1)See Thermal InformationStorage temperature–65150 CStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratingsonly, which do not imply functional operation of the device at these or any other conditions beyond those indicated under RecommendedOperating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.6.2 ESD n body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) 4000Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) 1500Machine model (MM), JEDEC Standard 22 400IEC 61000-4-2 ESD (Contact Discharge)Bus terminals and GND 12000IEC 60749-26 ESD (Human Body Model)Bus terminals and GND 16000IEC 61000-4-4 EMC (Fast Transient Burst Immunity)Bus terminals and GND 4000UNITVJEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD823

SN65HVD82SLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017www.ti.com6.3 Recommended Operating ConditionsMINNOMMAXVCCSupply voltage4.555.5VVIInput voltage at any bus terminal (separately or common mode) (1)–712VVIHHigh-level input voltage (D, DE and RE inputs)2VCCVVILLow-level input voltage (D, DE and RE inputs)00.8VVIDDifferential input voltage (A and B inputs)–1212VOutput current, Driver–6060mA8mAIOOutput current, Receiver–8RLDifferential load resistance54CLDifferential load capacitance1/tUISignaling rateTAOperating free-air temperature (see Application and Implementation section for thermalinformation)TJJunction Temperature(1)UNIT60Ω50pF250kbps–4085 C–40150 CThe algebraic convention, in which the least positive (most negative) limit is designated as minimum is used in this data sheet.6.4 Thermal InformationSN65HVD82THERMAL METRIC (1)D (SOIC)UNIT8 PINSRθJAJunction-to-ambient thermal resistance116.1 C/WRθJC(top)Junction-to-case (top) thermal resistance60.8 C/WRθJBJunction-to-board thermal resistance57.1 C/WψJTJunction-to-top characterization parameter13.9 C/WψJBJunction-to-board characterization parameter56.5 C/W(1)4For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics applicationreport, SPRA953.Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD82

SN65HVD82www.ti.comSLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 20176.5 Electrical Characteristicsover recommended operating conditions (unless otherwise noted)PARAMETER VOD Driver differential output voltagemagnitudeTEST CONDITIONSMINTYPMAXUNITSee Figure 5, RL 60 Ω, 375 Ω on each output to –7 V to 12 V1.5RL 54 Ω (RS-485)1.52V22.5VRL 100 Ω (RS-422)See Figure 6VΔ VOD Change in magnitude of driverdifferential output voltageRL 54 Ω, CL 50 pFSee Figure 6–0.200.2VVOC(SS)Steady-state common-mode outputvoltageCenter of two 27-Ω load resistorsSee Figure 61VCC/23VΔVOCChange in differential driver outputcommon-mode voltage–0.200.2VVOC(PP)Peak-to-peak driver common-modeoutput voltageCODDifferential output capacitanceVIT Positive-going receiver differential inputvoltage thresholdVIT–Negative-going receiver differential inputvoltage thresholdVHYSReceiver differential input voltagethreshold hysteresis (VIT – VIT–)VOHReceiver high-level output voltageIOH -8 mAVOLReceiver low-level output voltageIOL 8 mAIIDriver input, driver enable, and receiverenable input currentIOZReceiver output high-impedance currentVO 0 V or VCC, RE at VCCIOSDriver short-circuit output current IOS with VA or VB from –7 V to 12 VIIBus input current (disabled driver)VCC 4.5 to 5.5 V or VCC 0 V,DE at 0 ��2–10VI 12 V75VI –7 river and Receiver enabledDE VCC, RE GND,No load900Driver enabled, receiver disabledDE VCC, RE VCC,No load650Driver disabled, receiver enabledDE GND, RE GND,No load650Driver and receiver disabledDE GND, D GND,RE VCC, No loadSupply current (quiescent)Supply current (dynamic)(1)850μAμA0.42See Typical CharacteristicsUnder any specific conditions, VIT is assured to be at least VHYS higher than VIT-.Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD825

SN65HVD82SLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017www.ti.com6.6 Switching Characteristicsover recommended operating conditions (unless otherwise noted)PARAMETERTEST 0nsDRIVERtr, tfDriver differential output rise/fall timetPHL, tPLHDriver propagation delaytSK(P)Driver pulse skew, tPHL – tPLH tPHZ, tPLZDriver disable timetPZH, tPZLRL 54 Ω, CL 50 pF, See Figure 7Receiver enabledDriver enable timeSee Figure 8 and Figure 9Receiver tr, tfReceiver output rise/fall timetPHL, tPLHReceiver propagation delay timetSK(P)Receiver pulse skew, tPHL – tPLH tPLZ, tPHZReceiver disable timetPZL(1), tPZH(1)tPZL(2), tPZH(2)CL 15 pF, See Figure 10Receiver enable time115ns50500nsDriver enabled, See Figure 1120130nsDriver disabled, See Figure 1228μs6.7 Typical Characteristics5715VOLDriver Rise and Fall Time (ns)Driver Output Voltage 506070Driver Output Current (mA)80–40–20020406080100Temperature ( C)C003Figure 1. Driver Output Voltage vs Driver Output Current120C002Figure 2. Driver Rise and Fall Time vs Temperature625VIT (VIC 12V)5Receiver Output [R] (V)Supply Current (mA)201510543VIT-(VIC 12V)VIT-(VIC -7V)Series6VIT-(VIC 0V)210050100150200250Signaling Rate erential Input Voltage [VID] (mV)C001Figure 3. Supply Current vs Signaling Rate6VIT (VIC -7V)VIT (VIC 0V)–130–110C004Figure 4. Receiver Output vs Differential Input VoltageSubmit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD82

SN65HVD82www.ti.comSLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 20177 Parameter Measurement InformationInput generator rate is 100 kbps, 50% duty cycle, rise and fall times less than 6 nsec, output impedance 50 Ω.375 W 1%VCCDE0 V or 3 VDAVOD60 W 1%B –7 V V(test) 12 V375 W 1%S0301-01Figure 5. Measurement of Driver Differential Output Voltage With Common-Mode LoadA0 V or 3 1Figure 6. Measurement of Driver Differential and Common-Mode Output With RS-485 Load50%50%A: :B Copyright 2016, Texas Instruments IncorporatedFigure 7. Measurement of Driver Differential Output Rise and Fall Times and Propagation Delays3VDDEInputGeneratorVI50 WA3VS1BCL 50 pF 20%CL Includes Fixtureand InstrumentationCapacitanceVOVIRL 110 W 1%50%50%VO0V0.5 VtPZHVOH90%50%tPHZ»0VS0304-01D at 3V to test non-inverting output, D at 0V to test inverting output.Figure 8. Measurement of Driver Enable and Disable Times With Active High Output and Pull-Down LoadSubmit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD827

SN65HVD82SLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017www.ti.comParameter Measurement Information 3VRL 110 W 1%tPZLtPLZCL 50 pF 20%VI50 W»3VCL Includes Fixtureand InstrumentationCapacitanceVO50%10%VOLS0305-01D at 0V to test non-inverting output, D at 3V to test inverting output.Figure 9. Measurement of Driver Enable and Disable Times With Active Low Output and Pull-up Load3VAInputGeneratorRVI50 W1.5 VVIVO50%0VB0V50%tPLHCL 15 pF 20%REtPHL90% 90%VO50%10%CL Includes Fixtureand Figure 10. Measurement of Receiver Output Rise and Fall Times and Propagation Delays3VVCCDEA0 V or 3 V DREInputGeneratorVI1 kW 1%R VOBS1CL 15 pF 20%CL Includes Fixtureand InstrumentationCapacitance50 W3VVI50%50%0VtPZH(1)tPHZVOH90%VO50%D at 3 VS1 to GND»0VtPZL(1)tPLZVCCVO50%D at 0 VS1 to VCC10%VOLS0307-01Figure 11. Measurement of Receiver Enable/Disable Times With Driver Enabled8Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD82

SN65HVD82www.ti.comSLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017Parameter Measurement Information (continued)VCCA0 V or 1.5 VR VOS1B1.5 V or 0 VREInputGeneratorVI1 kW 1%CL 15 pF 20%CL Includes Fixtureand InstrumentationCapacitance50 W3VVI50%0VtPZH(2)VOHVOA at 1.5 VB at 0 VS1 to GND50%GNDtPZL(2)VCCVO50%VOLA at 0 VB at 1.5 VS1 to VCCS0308-01Figure 12. Measurement of Receiver Enable Times With Driver DisabledSubmit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD829

SN65HVD82SLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017www.ti.com8 Detailed Description8.1 OverviewThe SN65HVD82 device is a half-duplex RS-485 transceiver suitable for data transmission at rates up to 250kbps over controlled-impedance transmission media (such as twisted-pair cabling). The device features a highlevel of internal transient protection, making it able to withstand up ESD strikes up to 12 kV (per IEC 61000-4-2)and EFT transients up to 4 kV (per IEC 61000-4-4) without incurring damage. Up to 256 units of SN65HVD82may share a common RS-485 bus due to the device’s low bus input currents. The device also features a lowstandby current consumption of 400 nA (typical).8.2 Functional Block DiagramRREDED1236 A7B4Figure 13. Logic Diagram (Positive Logic)8.3 Feature Description8.3.1Receiver FailsafeThe differential receiver is failsafe to invalid bus states caused by: open bus conditions such as a disconnected connector shorted bus conditions such as cable damage shorting the twisted-pair together, or idle bus conditions that occur when no driver on the bus is actively drivingIn any of these cases, the differential receiver will output a failsafe logic High state so that the output of thereceiver is not indeterminate.Receiver failsafe is accomplished by offsetting the receiver thresholds so that the “input indeterminate” rangedoes not include zero volts differential. In order to comply with the RS-422 and RS-485 standards, the receiveroutput must output a High when the differential input VID is more positive than 200 mV, and must output a Lowwhen the VID is more negative than –200 mV. The receiver parameters which determine the failsafeperformance are VIT and VIT– and VHYS. As seen in the Electrical Characteristics table, differential signals morenegativethan–200 mV will always cause a Low receiver output. Similarly, differential signals more positive than 200 mV willalways cause a High receiver output.When the differential input signal is close to zero, it will still be above the VIT threshold, and the receiver outputwill be High. Only when the differential input is more negative than VIT– will the receiver output transition to aLow state. So the noise immunity of the receiver inputs during a bus fault condition includes the receiverhysteresis value VHYS (the separation between VIT and VIT– ) as well as the value of VIT .Signals which transition from positive to negative (or from negative to positive) will transition only once, ensuringno spurious bits.8.3.2 Low-Power Standby ModeWhen both the driver and receiver are disabled (DE transitions to a low state and RE transitions to a high state)the device enters standby mode. If the enable inputs are in this state for a brief time (e.g. less than 100 ns), thedevice does not enter standby mode. This prevents inadvertently entering standby mode during driver/receiverenabling. Only when the enable inputs are held in this state a sufficient duration (e.g. for 300 ns or more), thedevice is assured to be in standby mode. In this low-power standby mode, most internal circuitry is powereddown, and the steady-state supply current is typically less than 400 nA. When either the driver or the receiver isre-enabled, the internal circuitry becomes active.10Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD82

SN65HVD82www.ti.comSLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 20178.4 Device Functional ModesTable 1. Driver Function TableINPUTENABLEDDEAOUTPUTSHHHLActively drive bus HighLHLHActively drive bus LowXLZZDriver disabledXOPENZZDriver disabled by defaultOPENHHLActively drive bus High by defaultBTable 2. Receiver Function TableDIFFERENTIAL INPUTENABLEOUTPUTVID VA – VBRERVIT VIDLHReceive valid bus HighVIT– VID VIT L?Indeterminate bus stateVID VIT–LLReceive valid bus LowXHZReceiver disabledXOPENZReceiver disabled by defaultOpen-circuit busLHFail-safe high outputShort-circuit busLHFail-safe high outputIdle (terminated) busLHFail-safe high outputSubmit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD8211

SN65HVD82SLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017www.ti.comD and RE InputsDE InputVCCVCC100 kW1 kW1 kWInputInput100 kW9V9VA InputB InputVCCVCC16 V16 VR3R1R1R3InputInput16 VR216 VA and B OutputsR2R OutputVCCVCC16 V5WOutputOutput9V16 VFigure 14. Equivalent Input and Output Schematic Diagrams12Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD82

SN65HVD82www.ti.comSLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 20179 Application and ImplementationNOTEInformation in the following applications sections is not part of the TI componentspecification, and TI does not warrant its accuracy or completeness. TI’s customers areresponsible for determining suitability of components for their purposes. Customers shouldvalidate and test their design implementation to confirm system functionality.9.1 Application Information9.1.1 Device ConfigurationThe SN65HVD82 is a half-duplex, 250-kbps, RS-485 transceiver operating from a single 5-V supply. The driverand receiver enable pins allow for the configuration of different operating modes.RRRRRRREAREAREADEBDEBDEBDDDa) Independent driver andreceiver enable signalsDDb) Combined enable signals foruse as directional control pinDc) Receiver always onCopyright 2016, Texas Instruments IncorporatedFigure 15. SN65HVD82 Transceiver ConfigurationsUsing independent enable lines provides the most flexible control as it allows for the driver and the receiver to beturned on and off individually. While this configuration requires two control lines, it allows for selective listeninginto the bus traffic, whether the driver is transmitting data or not.Combining the enable signals simplifies the interface to the controller by forming a single, direction-control signal.Thus, when the direction-control line is high, the transceiver is configured as a driver, while for a low the deviceoperates as a receiver.Tying the receiver-enable to ground and controlling only the driver-enable input, also uses one control line only.In this configuration a node not only receives the data from the bus, but also the data it sends and thus can verifythat the correct data have been transmitted.9.1.2 Bus – DesignAn RS-485 bus consists of multiple transceivers connecting in parallel to a bus cable. To eliminate linereflections, each cable end is terminated with a termination resistor, RT, whose value matches the characteristicimpedance, Z0, of the cable. This method, known as parallel termination, allows for higher data rates over longercable length.Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD8213

SN65HVD82SLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017www.ti.comApplication Information (continued)RRREBDEDRARARTRTDABRAR RE DE DDEDBRDREBDDR RE DE DCopyright 2016, Texas Instruments IncorporatedFigure 16. Typical RS-485 Network with SN65HVD82 TransceiversCommon cables used are unshielded twisted pair (UTP), such as low-cost CAT-5 cable with Z0 100 Ω, andproper RS-485 cable with Z0 120 Ω.Line measurements have shown that making RT by up to 10% larger than Z0 improves signal quality. Typicalcable sizes are AWG 22 and AWG 24.The theoretical maximum bus length is assumed with 4000 ft or 1200 m, and represents the length of an AWG24 cable whose cable resistance approaches the value of the termination resistance, thus reducing the bussignal by half or 6 dB.The theoretical maximum number of bus nodes is determined by the ratio of the RS-485 specified maximum of32 unit loads (UL) and the actual unit load of the applied transceiver. For example, the SN65HVD82 is a 1/8 ULtransceiver. Dividing 32 UL by 1/8 UL yields 256 transceivers that can be connected to one bus.9.1.3 Cable-Length Versus Data RateThere is an inverse relationship between data rate and cable length. That is, the higher the data rate the shorterthe cable and conversely the lower the data rate the longer the cable. While most RS-485 systems utilize datarates between 10 kbps and 100 kbps, applications such as e-metering often operate at rates of up to 250 kbpseven at distances of 4000 feet and above. This is possible by allowing for small signal jitter of up to 5 or 10%.10000CABLE LENGTH - ft5,10,20 % 100k1M10M100MDATA RATE - bpsFigure 17. Cable Length vs Data Rate Characteristic14Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD82

SN65HVD82www.ti.comSLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017Application Information (continued)9.1.4 Stub – LengthWhen connecting a node to the bus, the distance between the transceiver inputs and the cable trunk, known asthe stub, should be as short as possible. The reason for this is that a stub presents a non-terminated piece ofbus line which can introduce reflections if too long. As a rule of thumb the electrical length or round-trip delay of astub should be less than one tenth of the driver’s rise time, thus leading to a maximum physical stub length of:LStub 0.1 tr v c, with tr as the driver’s 10/90 rise time, c as the speed of light (3 108 m/s or 9.8 108 ft/s),and v as the signal velocity of the cable (v 78%) or trace (v 45%) as a factor of c.Thus, for the SN65HVD82 with a minimum rise time of 400 ns the maximum cable stub length yields LStub 0.1 400 10-9 3 108 0.78 9.4 m or 30.6 ft.LSABRDR RE DE DFigure 18. Stub Length9.1.5 3-V to 5-V InterfaceInterfacing the SN65HVD82 to a 3-V controller is easy. Because the 5-V logic inputs of the transceiver accept 3V input signals they can be directly connected to the controller I/O. The 5-V receiver output, R, however must belevel-shifted via a Schottky diode and a 10-kV resistor to connect to the controller input. When R is high, thediode is reverse biased and the controller supply potential lies at the controller input. When R is low, the diode isforward biased and conducts. In this case only the diode forward voltage of 0.2 V lies at the controller input.3.3 V10 0.1 µFCopyright 2017, Texas Instruments IncorporatedFigure 19. 3 V – 5 V Interface9.1.6 Noise ImmunityThe input sensitivity of a standard RS-485 transceiver is 200 mV. When the differential input voltage, VID, isgreater than 200 mV, the receiver output turns high, for VID 200 mV the receiver outputs low. Bus voltages inbetween these levels can cause the receiver output to go high, or low, or even toggle between logic states. Smallbus voltages however occur every time during the bus access hand-off from one driver to the next as the lowimpedance termination resistors reduce the bus voltage to zero. To prevent receiver output toggling during busidling, and thus increasing noise immunity, external bias resistors must be applied to create a bus voltage that isgreater than the input sensitivity plus any expected differential noise.Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD8215

SN65HVD82SLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017www.ti.comApplication Information (continued)RVHYS-min60mV-80-20VID - mV800Vnoise-max 160mVppFigure 20. SN65HVD82 Noise ImmunityThe SN65HVD82 transceiver circumvents idle-bus and differential noise issues by providing a positive inputthreshold of –20 mV and a typical hysteresis of 60 mV. In the case of an idle-bus condition therefore, adifferential noise voltage of up to 160 mVPP can be present without causing the receiver output to change statesfrom high to low. This increased noise immunity eliminates the need for idle-bus failsafe bias resistors and allowsfor long haul data transmissions in noisy environment.9.1.7 Transient ProtectionThe bus terminals of the SN65HVD82 transceiver family possess on-chip ESD protection against 15 kV humanbody model (HBM) and 12 kV IEC61000-4-2 contact discharge. As stated in the IEC 61000-4-2 standard,contact discharge is the preferred test method; although IEC air-gap testing is less repeatable than contacttesting, air discharge protection levels are inferred from the contact discharge test results. The IEC-ESD test isfar more severe than the HBM-ESD test. The 50% higher charge capacitance, CS, and 78% lower dischargeresistance, RD of the IEC-model produce significantly higher discharge currents than the .5k)CS150pF(100pF)DeviceUnderTestCurrent - ARC403530252015105010kV IEC10kV HBM050100150200250300Time - nsCopyright 2016, Texas Instruments IncorporatedFigure 21. HBM and IEC-ESD Models and Currents in ComparisonEFTs are usually caused by relay contact bounce or the interruption of inductive loads, while surge transientsoften results from lightning strikes (direct strike or induced voltages and currents due to an indirect strike), or theswitching of power systems including load changes and short circuits switching. These transients are oftenencountered in industrial environments, such as factory automation and power-grid systems.16Submit Documentation FeedbackCopyright 2012–2017, Texas Instruments IncorporatedProduct Folder Links: SN65HVD82

SN65HVD82www.ti.comSLLSED6B – OCTOBER 2012 – REVISED NOVEMBER 2017Application Information (continued)2220181614121086420Pulse Power - MWPulse Power - kWFigure 22 compares the pulse-power of the EFT and surge transients with the power caused by an IEC-ESDtransient. As can be seen the tiny blue blip in the bottom left corner of the left diagram represents the power of a10-kV ESD transient, which already dwarfs against the significantly higher EFT power spike and certainly againstthe 500-V surge transient. This type of transient power is well representative for factory environments in industrialand process automation. The right diagram compares the enormous power of a 6-kV surge transient, which morelikely occurs in e-metering applications of power generating and power grid systems, with the aforementioned500-V surge transient. Note that the unit of the pulse-power changes from kW to MW, thus making the power ofthe 500-V surge transient almost dropping off the scale.0.5kV Surge4kV EFT10kV .00.80.60.40.206kV Surge0.5kV Surge0510152025303540Time - μsTime - μsFigure 22. Power Comparison of ESD, EFT, and Surge TransientsIn the case of surge transients, their long pulse duration and slowly decreasing pulse power signifies high energycontent.The electrical energy of a transient that is dumped onto the transceiver’s internal protections cells is convertedinto thermal energy, or heat that literally fries the protection cells, thus destroying the transceiver. Figure 23showcases the large differences in transient energies for single ESD, EFT, and surge transients as well as for anEFT pulse trai

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) SN65HVD82 D (SOIC) UNIT 8 PINS RθJA Junction-to-ambient thermal resistance 116.1 C/W RθJC

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