Power Semiconductor Product Guide 2018
Power SemiconductorProduct Guide 2018
ContentsIGBT ModulesDynex Semiconductor has a rich history in thedesign, development and production o f HighPower Semiconductors and Power Assemblies.Throughout the years, our products have beenapplied in projects that vary from Traction,Power Quality through HVDC, RenewableEnergy production, to helping science advance.1200V IGBT ModulesChoppers, Dual Switches and Single Switches041700V IGBT ModulesBi-directional Switches, Choppers, Dual Switches,Half Bridges and Single Switches043300V IGBT ModulesChoppers, Dual Switches, Half Bridgesand Single Switches054500V IGBT ModulesChoppers, Single Switches066500V IGBT ModulesChoppers, Single switches06IGBT Press-pack06Custom IGBT Modules07FRD Modules081200V FRD ModulesDual Diodes and Triple Diodes101800V FRD ModulesDual Diodes and Triple Diodes103300V FRD ModulesDual Diodes, Triple Diodes and Series Pair Diodes104500V and 6500V FRD ModulesDual Diodes and Triple Diodes11Bipolar Thyristors and DiodesPhase Control Thyristors1214-15Gate Turn off Thyristors16Asymmetric Bypass Thyristors16Pulsed Power Thyristors17Rectifier DiodesFast Recovery Diodes18-1919Foundry Services20Explanation of Part Numbers22Package OutlinesDYN-PS-180010224IGBT Modules25-26FRD Modules27Thyristors and Diodes28GTO29Symbols and Definitions30Important Information32
IGBT ModulesSuperior Power Cycling with thelatest IGBT generation die23
IGBT ModulesIGBT Modules1700V IGBT Modules1200V IGBT )at TC( C)VCE (sat)@Tc 25 C(V)Total Esw@Tc 125 C(mJ)Rth(j-c)(per switch)( C/kW)BaseplateDims(mm)IsolationVoltageTechHalf BridgeNEW600901.713949122 x 622.5 kVTSPTTSPT sIC(A)at TC( C)VCE (sat) @Tc 25 C(V)Total Esw@Tc 125 C(mJ)Rth(j-c)(per switch)( 7M1-S300Half BridgeNEW450851.827655122 x 623.4 kVTSPTTG1000HF17H1-S300Half BridgeNEW10001001.8574520250 x 894 kVTSPTPartNumberTSPT RangeAISiC Baseplate8006190 x 1402.5kVDNPTTSPT Range2.25708190 x 140 x 1304 kVTSPT2.25009140 x 22140 x 1304 kVTSPT852.240012140 x 1302.5kVDNPT852.228018140 x 1302.5kVDNPT800852.228018140 x 1302.5kVDNPT600852.220024140 x 1302.5kVDNPTConfiguration400852.212036140 x 1302.5kVDNPTProductionStatusIC(A)at TC( C)MP800852.228018140 x 1302.5kVDNPTTotal Esw@Tc 150 C(mJ)Rth(j-c)(perswitch)( C/kW)BaseplateDims(mm)IsolationVoltageChopperVCE (sat)@Tc 25 C(V)TechMPDIM1600FSS12-ASingleMP1600852.25009140 x 2007190 x 1406kVd2DIM1200FSS12-ASingleMP1200852.240012140 x 510012190 x 1406kVd2DIM800FSS12-ASingleMP800852.228018140 x 1302.5kVDNPTDIM800DDS12-ADualMP800852.228018140 x 1302.5kVDNPTDIM600DDS12-ADualMP600852.220024140 x 190 x 1406kVd2DIM400DDS12-ADualMP400852.212036140 x 008190 x 14010.2kVd2DIM800DCS12-AChopperMP800852.228018140 x 2140 x 140 x 13010.2kVd2DIM500GDM33-TSDualMP5001102.2210024140 x 0 x 2190 x 40 x 1306kVd2DIM250PKM33-TSChopperMP2501102.2104048140 x 736kVd2DIM250PLM33-TSChopperMP2501102.2104048140 x 736kVd2DIM250PHM33-TSHalf BridgeMP2501102.2104048140 x IM800DCM12-ACopper BaseplatePartNumberd2 MS Range1700V IGBT ModulesPartNumber3300V IGBT ModulesConfigurationProductionStatusIC(A)at TC( C)VCE (sat) @Tc 25 C(V)Total Esw@Tc 125 C(mJ)Rth(j-c)(per switch)( C/kW)BaseplateDims(mm)IsolationVoltageTechDNPT Ranged2 TS Range (standard)DIM2400ESM17-ASingleMP2400752.719506190 x 1404 kVDNPTDIM1600FSM17-ASingleMP1600752.712509140 x 1304 kVDNPTd2 TL Range (low conduction losses)DIM1200FSM17-ASingleMP1200752.7100012140 x 1304 kVDNPTDIM1500ESM33-TLSingleMP15001152.078008190 x 1406 kVd2DIM800FSM17-ASingleMP800752.770018140 x 1304 0 x 14010.2 kVd2DIM800DDM17-ADualMP800752.770018140 x 1304 kVDNPTDIM1000NSM33-TLSingleMP10001152.0484012140 x 1306 kVd2DIM600DDM17-ADualMP600752.762024140 x 1304 40 x 13010.2 kVd2DIM400DDM17-ADualMP400752.735036140 x 1304 kVDNPTDIM500GDM33-TLDualMP5001152.0265024140 x 1306 kVd2DIM1600ECM17-AChopperMP1600752.712509190 x 1404 kVDNPTDIM1000ECM33-TLChopperMP10001152.0484012190 x 1406 kVd2DIM800DCM17-AChopperMP800752.778518140 x 1304 190 x 14010.2 kVd2DIM600DCM17-AChopperMP600752.762024140 x 1304 kVDNPTDIM500GCM33-TLChopperMP5001152.0265024140 x 1306 kVd2DIM400DCM17-AChopperMP400752.735036140 x 1304 kVDNPTDIM250PKM33-TLChopperMP2501152.0130048140 x 736 kVd2DIM400PHM17-AHalf BridgeMP400752.735036140 x 734 kVDNPTDIM250PLM33-TLChopperMP2501152.0130048140 x 736 kVd2DIM400PBM17-ABi-directionalMP400754.9*35036140 x 734 kVDNPTDIM250PHM33-TLHalf BridgeMP2501152.0130048140 x 736 kVd2* Vce(sat) is measured across both arms of the bi-directional switch.* Vce(sat) is measured across both arms of the bi-directional switch.MP: Mass Production NEW: New Products NRND: Not Recommended for New DesignMP: Mass Production NEW: New Products NRND: Not Recommended for New Design4For further information and datasheets visit www.dynexsemi.com5
Custom IGBT ModulesIGBT Modules4500V IGBT )at TC( C)VCE (sat)@Tc 25 C(V)Total Esw@Tc 125 C(mJ)Rth(j-c)(per switch)( C/kW)BaseplateDims(mm)IsolationVoltageTechCustom IGBT ModulesEnhancing our range of power semiconductor devices, DYNEXSemiconductor Ltd has the capability to design, develop andmanufacture custom IGBT modules.d TS Range 190 x 1407.4 kVd2DIM1200ASM45-TS001SingleNEW1200902.7111008190 x 14010.2 kVd2DIM800XSM45-TSSingleNEW800902.7740012140 x 1307.4 kVd2DIM800XSM45-TS001SingleNEW800902.7740012140 x 13010.2 kVd2DIM400XCM45-TSChopperNEW400902.7380024140 x 1307.4 kVd2DIM400XCM45-TS001ChopperNEW400902.7380024140 x 13010.2 kVd2DIM400XSM45-TSSingleNEW400902.7380024140 x 1307.4 kVd2DIM400XSM45-TS001SingleNEW400902.7380024140 x 13010.2 kVd2d2 TL Range (low conduction losses)Applications for power electronics devices often involve harshoperating conditions or environments necessitating devicescapable of meeting these requirements.DYNEX semiconductor utilises our vast experience in themanufacture of power semiconductors to design andproduce high reliability IGBT modules customised to meetthe individual demands for end applications including thosein the aerospace, automotive, medical, renewable energy andtraction markets.DYNEX capabilities can encompass the 90 x 1407.4 kVd2DIM1200ASM45-TL001SingleNEW1200902.3136508190 x 14010.2 kVd2 Laser welded assembliesDIM800XSM45-TLSingleNEW800902.3910012140 x 1307.4 kVd2DIM800XSM45-TL001SingleNEW800902.3910012140 x 13010.2 kVd2 Ultrasonic Welding processes6500V IGBT ModulesPartNumberConfiguration Various die technologies (Trench gate, SiC)ProductionStatusIC(A)at TC( C)VCE (sat)@Tc 25 C(V)Total Esw@Tc 125 C(mJ)Rth(j-c)(per switch)( C/kW)BaseplateDims(mm)IsolationVoltageTech Liquid cooled heatsinks Customised busbar arrangements Silver Sinteringd2 RangeDIM750ASM65-TSSingleMP750903.0103008190 x 14010.2 kVd2DIM500XSM65-TSSingleMP500903.0700012140 x 13010.2 kVd2DIM500ACM65-TSChopperMP500903.0700012190 x 14010.2 kVd2DIM250XCM65-TSChopperMP250903.0350024140 x 13010.2 kVd2NEW1000903.1138008190 x 14010.2 kVTSPTTSPT UF Range (low switching losses)DIM1000ASM65-UF000 Copper Wire bondsSingle Customised packaging (case materials) Hermetic sealed packagesUsing our experience in design of IGBT modules,Dynex has designed and manufactured modules thathave helped our customers: Reduce system cost, Reduce total system size and weightIGBT Press-Pack Improve thermal characteristics4500V IGBT Press-pack Operate in severe environmentsPartNumberConfiguration Maximise system efficiencyProductionStatusIC(A)at TC( C)VCE (sat)@Tc 25 C(V)Total Esw@Tc 125 C(mJ)Rth(j-c)(per switch)( C/kW)Flange OD/Contact OD/Height (mm)IsolationVoltageTechUsing our in-house design team, Dynex continues to developour own processes and designs to utilise the latest techniquesto improve cooling, current output, lifetime and .5171006.4170/125/26.5-d2DPI2100P45AAll IGBTNEW2100952.4198004.4170/125/26.5-d2Through initial concept to full production, Dynex will supportyour requirements to provide enhanced, reliable deviceoutlines to meet your stringent demands.For more information on how Dynex can help with your customIGBT needs, please email powersolutions@dynexsemi.com6For further information and datasheets visit www.dynexsemi.com7
FRD ModulesRegulate electricity flow toensure higher reliability andincreased efficiency in motordrives and other variablespeed processes89
FRD Modules for use with IGBT modulesFRD Modules1200V FRD ModulesPartNumberConfiguration4500V FRD ModulesProductionStatusIF(A perarm)at TC( C)BaseplateDims (mm)IsolationVoltageIF(A as singlediode withexternalconnection)Vf@ Tvj 25 ºC2Qrr@ TvjIt(kA2s)Erec@TvjRth(j-c)(perarm)( C/kW)AISiC uctionStatusIF(A perarm)at TC( C)BaseplateDims (mm)IsolationVoltageIF(A as singlediode withexternalconnection)Vf@ Tvj 25 ºCI2t(kA2s)Qrr@ TvjErec@TvjRth(j-c)(perarm)( C/kW)2.84602200400016TS RangeTriple DiodeMP120075190 x 1402.5 kV36001.920030014020DFM1200AXM45-TSTriple DiodeNEW120065190 x 1407.4kV3600DFM1200FXM12-ADual DiodeMP120075140 x 1302.5 kV24001.920030014020DFM1200AXM45-TS001Triple DiodeNEW120065190 x 14010.2 kV36002.84602200400016DFM900FXM12-ADual DiodeMP90075140 x 1302.5 kV18001.915022510527DFM1200XXM45-TSDual DiodeNEW120065140 x 1307.4kV24002.84602200400016DFM600FXM12-ADual DiodeMP60075140 x 1302.5 kV12001.91001507040DFM1200XXM45-TS001Dual DiodeNEW120065140 x 13010.2 kV24002.84602200400016DFM800XXM45-TSDual DiodeNEW80065140 x 1307.4 kV16002.8300145027002420DFM800XXM45-TS001Dual DiodeNEW80065140 x 13010.2 kV16002.83001450270024Dual DiodeNEW40065140 x 1307.4kV8002.8150750135048Dual DiodeNEW40065140 x 13010.2kV8002.8150750135048IF(A perarm)at TC( C)BaseplateDims (mm)IsolationVoltageCopper BaseplateDFM1200FXS12-ADual DiodeNRND120075140 x 1302.5 kV24001.9200300140DFM900FXS12-ADual DiodeNRND90075140 x 1302.5 l DiodeNRND60075140 x 1302.5 kV12001.91501507040DFM400XXM45-TS0016500V FRD Modules1800V FRD ModulesPartNumberConfigurationProductionStatusIF(A perarm)at TC( C)BaseplateDims (mm)IsolationVoltageIF(A as singlediode withexternalconnection)Vf@ Tvj 25 ºCI2t(kA2s)Qrr@ TvjErec@TvjRth(j-c)(perarm)( C/kW)ConfigurationProductionStatusIF(A as singlediode withexternalconnection)Vf@ Tvj 25 ºCI2t(kA2s)Qrr@ TvjErec@TvjRth(j-c)(perarm)( C/kW)TS RangeAISiC BaseplateDFM1200EXM18-APartNumberTriple DiodeMP120075190 x 1404 kV36002.048054036020DFM750AXM65-TSTriple DiodeNEW75070190 x 14010.2 kV22503.82181500300020Dual DiodeNEW50070140 x 13010.2 kV10003.8971000200030Dual DiodeNEW25070140 x 13010.2 kV5003.824500100060DFM1200FXM18-ADual DiodeMP120075140 x 1304 l DiodeMP90075140 x 1304 l DiodeMP60075140 x 1304 kV12002.012016012040* Vce(sat) is measured across both arms of the bi-directional switch.MP: Mass Production NEW: New Products NRND: Not Recommended for New Design3300V FRD ModulesConfigurationProductionStatusIF(A perarm)at TC( C)BaseplateDims (mm)IsolationVoltageIF(A as singlediode withexternalconnection)Vf@ Tvj 25 ºCI2t(kA2s)Qrr@ TvjErec@TvjRth(j-c)(perarm)( C/kW)DFM1000EXM33-TSTriple DiodeMP100090190 x 1406 kV30002.43201070130024DFM1000NXM33-TSDual DiodeMP100090140 x 1306 kV20002.43201070130024DFM500NXM33-TSDual DiodeMP50090140 x 1306 kV10002.48054065048DFM250PXM33-TSSeries PairMP25090140 x 736 kVN/A2.42027033096DFM1200NXM33-FDual DiodeMP120070140 x 1306 kV24002.972090090016DFM800NXM33-FDual DiodeMP80070140 x 1306 kV16002.932060060024DFM400NXM33-FDual DiodeMP40070140 x 1306 kV8002.98030030048DFM400PXM33-FSeries Diode PairMP40070140 x 736 kVN/A2.98030030048DFM200PXM33-FSeries Diode PairMP20070140 x 736 kVN/A2.92012513096DFM100PXM33-FSeries Diode PairMP10070140 x 736 kVN/A2.956565192PartNumberTS RangeF Range (fast)Notes:* Refer to datasheets for Tvj max d-modules10For further information and datasheets visit www.dynexsemi.com11
Bipolar Thyristorsand DiodesReliable and efficient transfer ofenergy for a range of applications1213
Phase Control ThyristorsPhase Control ThyristorsVDRM (V)VRRM (V)IT (AV) atTC 60 C(A)ITSM atTvj VR 0(kA)dV/dt(V/µs)Non Rep.dI/dt (A/µs)Rth(j-c)( C/W)OutlineType CodeFlange ODContact ODHeight (mm)ClampingForce (kN)min - -6PartNumberUp to 1400VIT (AV) atTC 60 C(A)ITSM atTvj VR 0(kA)VDRM (V)VRRM 6.8PartNumberdV/dt(V/µs)Non Rep.dI/dt (A/µs)Rth(j-c)( C/W)OutlineType CodeFlange ODContact ODHeight (mm)150040015001000ClampingForce (kN)min - 520-25Up to 10000.02F75/47/26.518-26Up to 0520034804915004000.007B120/84.6/34.9968-84Up to 1800VUp to 4255H170/115/35.27120-15010-13Up to 6500VUp to 5000.00423H170/115/35120-150Up to 0.0184F73/47/27.4620-25Up to 15/35120-150For further information and datasheets visit www.dynexsemi.com15
Gate Turn Off ThyristorsPartNumberVDRM(V)VRRM(VIT (AV) atTC 80 C(A)ITCM(A)dV/dt(V/µs)Pulsed Power ThyristorsdI/dt(A/µs)Rth(j-c)( C/W)OutlineTypeCodeFlange ODContact ODHeight (mm)SnubberDiodeAnti-paralleland FreewheelDiodeClampingForce (kN)min - maxPartNumberVDRM(V)VRRM(VIT (AV) atTC 80 C(A)ITSM atTvj VR 0(kA)dV/dt(V/µs)dI/dt(A/µs)to Ipk(kA)Rth(j-c)( C/W)OutlineTypeCodeFlange ODContact ODHeight (mm)ClampingForce (kN)min - maxAsymmetric TypesPulsed Power Thyristors (SCR)Up to .9/25/15-DF4515-6Up to 4515-6Note: 1. Please contact customer services for the availability of clamps for these devices.Up to .011W120/84.6/27.7DSF8045SKDSF21545SV36-44Up to 4500VReverse BlockingUp to DF4515-6Up to DF4515-6Asymmetric Bypass ThyristorsPartNumberVDRM(V)VRRM(VIT (AV) atTC 80 ( C/W)OutlineTypeCodeFlange ODContact ODHeight (mm)DC Cosmic RayFailure Rate @50% VRRM (FITs)Clamping Force (kN)min - 10/73/27.69848-59The bypass thyristor range of devices is specially designed for protection of IGBT modules in VSC multi-level applications,where a reduced forward blocking voltage is required. In these applications a thyristor must rapidly divert fault currents froman IGBT diode to protect it from damage. Dynex have designed devices with improved current and surge ratings to assist faultdiversion. Such protective thyristors are required to block in parallel with the IGBT diode and as such experience waveformsthat are non typical of thyristor applications. They are resistant to fast voltage transients, which they can be exposed to dueto the switching of the IGBT diode. The device structures also have greatly enhanced hardness to cosmic ray induced failureswhich become significant at high duty cycles.16The PT family of Pulsed Power Thyristors (PPTs) is based onDynex’s GTO technology and is designed for long term stabilityunder DC voltages. The structures are resistant to cosmic rayinduced failures at normal working voltages. Dynex’s PulsedPower Thyristors may be used to connect a source of storedenergy, such as a capacitor, to a load, or to bypass and protectthe load in the case of a crowbar circuit. In these pulsed powerapplications where the rate of rise of current is very fast, thepulsed power switch is acting as a closing switch and ordinaryphase control thyristors (SCRs) are likely to fail due to the highdi/dt experienced.Pulsed Power Thyristors may also be required to act in theopening switch mode. Such applications may include thosewhere voltage is reapplied to the pulsed power switch shortlyafter closing and the switch needs to have recovered blockingcapability or the transferred energy needs to be controlled. Inthese applications, the switch needs to have turn-off capabilityto reduce the natural turn-off time (tq) of the device. The deviceis operated in GTO mode with the appropriate commutatinggate drive. Dynex has been supplying thyristors used ascrowbars to protect other high power circuitry in railwaypropulsion units and the like for many years. In addition, Dynexhas been a supplier of devices used in equipment for thesterilisation of foods by intense light or x-rays since the late1980s. These applications operate at moderate di/dts and canbe satisfied with conventional thyristor solutions.In the field of ignitron replacements and weld switches, Dynexhas been a world leader in the application of solid state devices.Dynex has been involved in the design and manufacture ofassemblies for the pulsed power communities on the WestCoast of America and at CERN, Switzerland.Thyristor ComponentsTake a look at the components that make up ourencapsulated device. The devices are fully floating andtherefore are not bonded together and are clampedtogether to achieve electrical and thermal contactinstead. This allows our products to have an excellenttemperature cycling life expectancy.Housing lidMolybdenum washerThyristor insulationThyristor unitDevice housingMolybdenum discPTFE locator ringHousing lidFor more information on how Dynex can help with yourpulsed power needs, please e-mail usat powersolutions@dynexsemi.comFor further information and datasheets visit www.dynexsemi.com17
Rectifier DiodesPartNumberVRRM(V)IF (AV) atTC 100 (A)Rectifier DiodesIFSM at TvjVR 0 (kA)I2t at Tvj VR 0 (MA2s)Rth(j-c)( C/W)IFM (A)VFM@ IFM &Tc 25ºC (V)OutlineTypeCodeFlange ODContact ODHeight (mm)ClampingForce (kN)min - maxUp to 1400VPartNumberVRRM(V)IF (AV) atTC 100 (A)IFSM at TvjVR 0 (kA)I2t at Tvj VR 0 (MA2s)Rth(j-c)( C/W)IFM (A)VFM@ IFM &Tc 25ºC (V)OutlineTypeCodeFlange ODContact ODHeight (mm)ClampingForce (kN)min - maxUp to 7/29/14.58-12Up to 03218001.8G58.5/34/ .5/34/2611.5-13.5Up to 2800VUp to 01.35C100/63/26.540-50Up to 5000VRectifer Diodes 5200V 100 Fast Recovery DiodesPartNumberVRRM (V)IT (AV) atTC 65 C(A)IFSM at TvjVR 0 (kA)I2t at TvjVR 0(MA2s)IFM(A)VF(V)Qr(µC)trr(µs)OutlineType CodeFlange ODContact ODHeight (mm)ClampingForce (kN)min - max16002953.50.0616002.65251.22T42/19/154.5-5.5Up to 1400VDF451Up to 00524064.220.610.00760001.29W120/84/26.562-78Up to 3.87006G58/35/2710.8-13.2Up to 11.5-13.5Up to .010.1153002.1E42/25/152.5-3.8Up to 4400VDRA170E4418For further information and datasheets visit www.dynexsemi.com19
Foundry ServiceFoundryServicesWith a wealth of experience in the design andmanufacture of IGBT die and Bipolar wafers,Dynex has the capability to provide worldclass components to Semiconductor modulecompanies, with a speciality in IGBT die in therange of 1.2kV to 6.5kV.Key Benefits:Dynex offers to the market a broad range of established,proven, Trench Gate and DMOS die that form the basis ofDynex’s own high-quality IGBT modules. This Foundry servicehas been provided to the market for a long time and hasrecently been opened up to a wider audience. Refined wafer fabrication processesIn addition, with its in-house chip design team, Dynex cancustomise die to specific customer requirements. This,coupled with full technical support, world-class designcapability, and rapid response to customer needs, shows thatDynex is truly differentiated in the foundry services arena.At the same time, Dynex has refined the wafer fabricationprocesses to achieve benchmark levels of quality, reliabilityand yields, offering the benefits to the wider market.20 Robust process Decades of experience Broad range of capabilities In-house chip design team Customisable to suit requirementsWe are pleased to be offering this technology andprocess robustness and the benefits it brings to the widersemiconductor marketFor further information please contact the Foundry Servicesteam at:powersolutions@dyn
Product Guide 2018. . 1700V IGBT Modules Bi-directional Switches, Choppers, Dual Switches, Half Bridges and Single Switches 04 3300V IGBT Modules Choppers, Dual Switches, Half Bridges and Single Switches 05 4500V IGBT Modules Choppers, Single Switches 06 6500V IGBT Modules Choppers, Single switches 06 IGBT Press-pack 06 Custom IGBT Modules 07
ADEKA SUPER TEOS PRODUCT NAME Si(OC 2H5)4 CHEMICAL FORMULA APPLICATION Dielectric film/Semiconductor ADEKA HIGH-PURITY TEOP PO(OC 2H5)3 Dopant/Semiconductor ADEKA HIGH-PURITY TEB B(OC 2H5)3 Dopant/Semiconductor ADEKA HIGH-PURITY TiCl4 TiCl4 Electrode/Semiconductor ADEKA SUPER TMA Al(CH 3)3 High-k material/Semiconductor ADEKA ORCERA TDMAH Hf[N(CH 3)2]4 High-k material/Semiconductor
However, the semiconductor body can alternatively be of Si or of a high-bandgap com-pound semiconductor material like Ga 2O3 or GaN. [0019] According to atl east one embodiment, the pow-er semiconductor device is a field-effect transistor or an insulated gate bipolar transistor, IGBT for short. For ex-ample, the power semiconductor device .
AUK Semiconductor Corp. Aura Vision Aureal Aurora Systems Austin Semiconductor Austria Mikro Systeme International Avance Logic Avantek Averlogic . Performance Semiconductor Pericom Semiconductor PhaseLink Laboratories Philips Photobit PLX Technology PMC-Sierra Power A
Test Name Score Report Date March 5, 2018 thru April 1, 2018 April 20, 2018 April 2, 2018 thru April 29, 2018 May 18, 2018 April 30, 2018 thru May 27, 2018 June 15, 2018 May 28, 2018 thru June 24, 2018 July 13, 2018 June 25, 2018 thru July 22, 2018 August 10, 2018 July 23, 2018 thru August 19, 2018 September 7, 2018 August 20, 2018 thru September 1
Advanced Semiconductor Plating – Key Fundamentals PAN100 / 2 . are multiple types of reactors in use in the semiconductor industry, the specifications for leading products and devices drives the use of a single-wafer fountain reactor. All the . modern semiconductor power supplies.
power electronics has generally followed the evolution of power semiconductor devices. The advancement of microelectronics has greatly contributed to the knowledge of power device materials, processing, fabrication, packaging, modeling, and simulation. Today’s power semiconductor dev
ELECTRONIC DEVICES - I 1. Energy Bands in Solids 2. Energy Band Diagram 3. Metals, Semiconductors and Insulators 4. Intrinsic Semiconductor 5. Electrons and Holes 6. Doping of a Semiconductor 7. Extrinsic Semiconductor 8. N-type and P-type Semiconductor 9. Carrier Concentration in Semiconductors 10.Distinction between Intrinsic and Extrinsic .
Semiconductor Optical Amplifiers 9.1 Basic Structure of Semiconductor Optical Amplifiers (SOAs) 9.1.1 Introduction: Semiconductor optical amplifiers (SOAs), as the name suggests, are used to amplify optical signals. A typical structure of a InGaAsP/InP SOA is shown in the Figure below. The basic structure consists of a heterostructure pin junction.File Size: 1MB
