Quarterly Reliability Report
Quality and Reliability ReportFourth Quarter 2020Document ID : 20Q4 QR Report.docNote: All rights reserved. No part of this publication may be reproduced or transmitted without prior approval bySilicon Labs. This document is the property of Silicon Labs and shall be returned upon request.
Table of ContentsQuality and Reliability Report Overview . 3Average Outgoing Quality (AOQ) . 4Part Numbers by Fab Technology . 6Failure Rate Estimation by Fab Technology . 15Flash Reliability Summary by Fab Technology . 56Reliability Monitors . 67Revision History . 85Quarterly Quality & Reliability Report 20Q4 QR ReportPg. 2/85
Quality and Reliability Report OverviewSilicon Labs is pleased to share this Quality and Reliability Report with our customers. It provides the latest qualityperformance data along with failure rate estimates and reliability monitor data for integrated circuit products.* Thesedata are collected on a continual basis as qualification, production and reliability monitors are completed. The report ispublished and updated quarterly to provide customers visibility to the most recent information. The Quality Trend chartson page 5 are shown on a rolling five-year basis. All other reports include data from the previous four quarters on arolling, one-year basis.The report provides data covering: Estimates of shipped product quality Long-term operating life estimates Mean time to failure estimates Data retention life estimates Reliability monitor resultsSilicon Labs is registered to ISO 9001:2015, ISO 14001:2015 and maintained certification to ISO/TS 16949:2009 fromJanuary 2008 to October 2014. Due to a change in the ISO/TS 16949 certification eligibility requirements in 2013,fabless semiconductor companies are no longer eligible for certification. Silicon Labs now conforms to IATF 16949 andcontinues to internally audit to IATF 16949 as well as being audited externally with IATF 16949 certified auditors. SiliconLabs uses IATF 16949 certified suppliers for automotive products.Silicon Labs is committed to quality excellence. That commitment is demonstrated by extensive product and processqualification. Each product undergoes extensive qualification testing prior to production release. Silicon Labs qualifiesintegrated circuit products using JEDEC JESD47, Stress-Test-Driven Qualification of Integrated Circuits or AEC-Q100,Stress Test Qualification for Integrated Circuits, as appropriate.Once a product is qualified, on-going product quality and reliability is verified through monitoring programs. Monitorsare scheduled to periodically sample wafer fab technologies and package technologies. The results are published inthis report. Any failures are used to drive corrective action and process and product improvement.We hope you find this report useful. Please let us know if you have any specific questions or suggestions.All rights reserved. No part of this publication may be reproduced without prior approval by Silicon Labs.*Module data will be added in 2020. Reliability qualification reports are available on www.silabs.com.Quarterly Quality & Reliability Report 20Q4 QR ReportPg. 3/85
Average Outgoing Quality (AOQ)OverviewTwo elements of product quality are reported – electrical quality and mechanical/visual quality. We measure electricalquality by taking a sample (monitor) of production parts and retesting the sample to the datasheet limits (see Figure 1).The sample electrical test may be performed at an alternate test temperature to verify part performance across thedatasheet temperature range. This sample method identifies defects introduced at the test process step or that haveescaped the test process. Any failures drive corrective actions and product/process improvements.Visual/Mechanical quality is estimated by sample inspection of the completed product prior to final pack. Inspectionitems cover a broad range of characteristics and include mark, count, label, cover tape workmanship, moisture barrierbag integrity, lead location, part placement, and many other general workmanship items required for customersatisfaction and product protection during shipment. Any failures drive corrective actions and process improvements.Figure 1 – Quality Monitor FlowOrder FulfillmentAssemblyTestElectrical DPPMScanFGIShipMechanical DPPMQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 4/85
Electrical and Visual / Mechanical Outgoing Quality GraphsQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 5/85
Part Numbers by Fab TechnologyPart NumberTechnologyPart NumberTechnology500X0.13 umCF0XX0.35 um, embedded flash51X0.13 umCF1XX0.35 um, embedded flash53X0.13 umCF2XX0.35 um, embedded flash54X55 nmCF30X0.35 um, embedded flash55X0.13 umCF31X0.35 um, embedded flash56X55 nmCF32X0.35 um, embedded flash57X0.13 umCF33X0.35 um, embedded flash59X0.13 umCF34X0.35 um, embedded flashBGM11SX90 nm, embedded flashCF35X0.35 um, embedded flashBGM12X90 nm, embedded flashCF36X0.35 um, embedded flashBGM13S22FX90 nm, embedded flashCF37X0.35 um, embedded flashBGM13S3X90 nm, embedded flashCF38X0.18 um, embedded flashBGM220SX40 nm, embedded flashCF39X0.18 um, embedded flashBGX13S22GX90 nm, embedded flashCF4XX0.25 um, embedded flashBGX220S240 nm, embedded flashCF5XX0.25 um, embedded flashBM11X90 nm, embedded flashCF7XX0.18 um, embedded flashC8051F0XX0.35 um, embedded flashCF8XX0.18 um, embedded flashC8051F1XX0.35 um, embedded flashCF9XX0.18 um, embedded flashC8051F2XX0.35 um, embedded flashCP21010.35 um, embedded flashC8051F30X0.35 um, embedded flashCP21020.35 um, embedded flashC8051F31X0.35 um, embedded flashCP2102N0.18 um, embedded flashC8051F32X0.35 um, embedded flashCP21030.35 um, embedded flashC8051F33X0.35 um, embedded flashCP21040.18 um, OTPC8051F34X0.35 um, embedded flashCP21050.18 um, OTPC8051F35X0.35 um, embedded flashCP21070.18 um, OTPC8051F36X0.35 um, embedded flashCP21080.18 um, embedded flashC8051F37X0.18 um, embedded flashCP21090.18 um, OTPC8051F37X0.35 um, EEPROMCP211X0.18 um, OTPC8051F38X0.18 um, embedded flashCP21200.35 um, embedded flashC8051F39X0.18 um, embedded flashCP213X0.18 um, OTPC8051F4XX0.25 um, embedded flashCP22XX0.35 um, embedded flashC8051F5XX0.25 um, embedded flashCP240X0.18 umC8051F7XX0.18 um, embedded flashCP250X0.35 um, embedded flashC8051F8XX0.18 um, embedded flashCP254X0.18 um, OTPC8051F9XX0.18 um, embedded flashCP26XX0.18 um, embedded flashC8051TXXX0.18 um, OTPCP40000.13 umQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 6/85
Part NumberTechnologyPart NumberTechnologyCPTXXXX0.18 um, embedded flashEFR32MG1B6X90 nm, flashCTXXX0.18 um, OTPEFR32MG1B7X90 nm, embedded flashCY28150.6 um - 1.0 umEFR32MG1B7X90 nm, flashCYWXXX0.45 um - 0.5 umEFR32MG1P1X90 nm, embedded flashEFM32G2X0.18 um, embedded flashEFR32MG1P2X90 nm, embedded flashEFM32G3X0.18 um, embedded flashEFR32MG1P6X90 nm, embedded flashEFM32G8X0.18 um, embedded flashEFR32MG1P6X90 nm, flashEFM32GG1X90 nm, embedded flashEFR32MG1P7X90 nm, embedded flashEFM32GG2X0.18 um, embedded flashEFR32MG1P7X90 nm, flashEFM32GG3X0.18 um, embedded flashEFR32MG1V1X90 nm, embedded flashEFM32GG8X0.18 um, embedded flashEFR32MG2X40 nm, embedded flashEFM32GG9X0.18 um, embedded flashEFR32R90 nm, embedded flashEFM32HG0.18 um, embedded flashEFR32Z90 nm, embedded flashEFM32JG90 nm, embedded flashEM25X0.18 um, embedded flashEFM32LG0.18 um, embedded flashEM26X0.18 um, embedded flashEFM32PG90 nm, embedded flashEM31X0.11 umEFM32TG108X0.18 um, embedded flashEM31X0.18 um, embedded flashEFM32TG110X0.18 um, embedded flashEM34X0.18 um, embedded flashEFM32TG11BX90 nm, embedded flashEM35X0.18 um, embedded flashEFM32TG2X0.18 um, embedded flashEZR32X0.11 umEFM32TG8X0.18 um, embedded flashEZR32X0.18 um, embedded flashEFM32WG0.18 um, embedded flashIA10XXDiodeEFM32ZG0.18 um, embedded flashIA12XX0.6 um - 0.8 um BiCMOSEFM8X0.18 um, embedded flashIA14XX0.6 um - 0.8 um BiCMOSEFPX0.18 umIA32XX0.6 um - 0.8 um BiCMOSEFR32BG1X90 nm, embedded flashIAP4XX0.6 um - 0.8 um BiCMOSEFR32BG2X40 nm, embedded flashIAP6XX0.6 um - 1.0 umEFR32FG1X90 nm, embedded flashIAP7XX0.6 um - 1.0 umEFR32FG2X40 nm, embedded flashIAP86X0.6 um - 0.8 um BiCMOSEFR32MG12PX90 nm, embedded flashIAP87X0.315 um - 0.35 umEFR32MG13P6X90 nm, embedded flashIAP90X0.6 um - 1.0 umEFR32MG13P7X90 nm, embedded flashIAP91X0.6 um - 0.8 um BiCMOSEFR32MG13P8X90 nm, embedded flashIAP93X0.6 um - 1.0 umEFR32MG13P8X90 nm, flashMGM13SX90 nm, embedded flashEFR32MG14PX90 nm, embedded flashRM240 nm, embedded flashEFR32MG1B1X90 nm, embedded flashRWM30.11 umEFR32MG1B2X90 nm, embedded flashS3CX0.18 um, embedded flashEFR32MG1B6X90 nm, embedded flashS3UX0.18 um, embedded flashQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 7/85
Part NumberTechnologyPart NumberTechnologySD35X0.13 um, embedded flashSi21460.11 umSi100X0.18 um, embedded flashSi214755 nmSi100X0.18 um, RFSi214855 nmSi101X0.18 um, embedded flashSi215055 nmSi101X0.18 um, RFSi215155 nmSi102X0.18 um, embedded flashSi21530.11 umSi102X0.18 um, RFSi21550.11 umSi103X0.18 um, embedded flashSi21560.11 umSi103X0.18 um, RFSi215755 nmSi106X0.11 umSi215855 nmSi106X0.18 um, embedded flashSi215955 nmSi108X0.11 umSi2160-X55 nmSi108X0.18 um, embedded flashSi2161-X0.11 umSi11020.6 um - 0.8 um BiCMOSSi2162-X55 nmSi1102DiodeSi2163-X0.11 umSi11200.6 um - 0.8 um BiCMOSSi2164-X55 nmSi1120DiodeSi2165-X0.11 umSi11320.18 um, OTPSi2166-AXX0.11 umSi11330.18 umSi2166-BXX55 nmSi114X0.18 um, OTPSi2166-CXX55 nmSi115X0.18 umSi2166-DXX55 nmSi117X0.18 umSi2167-AXX0.11 umSi118X0.18 umSi2167-BXX55 nmSi210X0.13 umSi2167-CXX55 nmSi21110.11 umSi2167-DXX55 nmSi21130.11 umSi2168-X55 nmSi21150.11 umSi2169-X55 nmSi212455 nmSi216XX-X55 nmSi212755 nmSi21700.11 umSi212855 nmSi21710.11 umSi21360.11 umSi21720.11 umSi213755 nmSi21730.11 umSi213855 nmSi21760.11 umSi21400.11 umSi217755 nmSi214155 nmSi217855 nmSi21430.11 umSi218055 nmSi214455 nmSi218155 nmSi21450.11 umSi218255 nmQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 8/85
Part NumberTechnologyPart NumberTechnologySi218355 nmSi2493-C0.18 umSi21850.11 umSi2493-D0.11 umSi219055 nmSi24940.11 umSi219155 nmSi25350.25 umSi21960.11 umSi30000.45 um - 0.5 umSi220X0.315 um - 0.35 umSi30050.25 umSi221X0.25 umSi30060.25 umSi24000.45 um - 0.5 umSi30070.25 umSi24010.18 umSi30080.25 umSi24030.18 umSi30090.25 umSi2404-C0.18 umSi30100.25 umSi2404-D0.11 umSi30110.25 umSi2415-D0.11 umSi30120.45 um - 0.5 umSi2417-D0.18 umSi30140.45 um - 0.5 umSi2417-E0.11 umSi30150.45 um - 0.5 umSi241X-A0.18 umSi30160.45 um - 0.5 umSi241X-B0.18 umSi30170.25 umSi241X-C0.18 umSi30180.25 umSi241X-F0.18 umSi30190.25 umSi241X-G0.18 umSi302X0.45 um - 0.5 umSi241X-H0.18 umSi3050-D0.25 umSi242X0.18 umSi3050-E0.18 umSi24330.18 umSi30520.25 umSi2434-C0.18 umSi30540.25 umSi2434-D0.11 umSi30560.25 umSi2435-B0.18 umSi306X0.25 umSi2435-C0.18 umSi307X0.25 umSi2435-D0.18 umSi308X0.25 umSi2435-E0.11 umSi31XX0.25 umSi2435-F0.11 umSi320XHigh VoltageSi24360.18 umSi32100.45 um - 0.5 umSi24370.18 umSi32110.45 um - 0.5 umSi24380.18 umSi32150.45 um - 0.5 umSi24390.11 umSi32160.45 um - 0.5 umSi24560.18 umSi3217X0.18 umSi2457-C0.18 umSi3217XHigh VoltageSi2457-D0.11 umSi3218X0.18 umSi2457-FT0.18 umSi3218XHigh VoltageQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 9/85
Part NumberTechnologyPart NumberTechnologySi3219X0.18 umSi34590.18 um, OTPSi3219XHigh VoltageSi3459High VoltageSi32200.45 um - 0.5 umSi346X0.18 um, OTPSi32250.45 um - 0.5 umSi347X0.18 um, embedded flashSi3226-X0.18 umSi347XHigh VoltageSi3226X-C0.18 umSi348X0.35 um, embedded flashSi3226X-CHigh VoltageSi35XXHigh VoltageSi32270.18 umSi401X0.13 umSI3228X0.18 umSi402X0.6 um - 0.8 um BiCMOSSI3228XHigh VoltageSi403X0.18 um, RFSI3229X0.18 umSi405X0.11 umSI3229XHigh VoltageSi406X0.11 umSi32300.45 um - 0.5 umSi41XX0.315 um - 0.35 umSi32320.45 um - 0.5 umSi43100.13 umSi32330.45 um - 0.5 umSi43110.13 umSi3238High VoltageSi43120.13 umSi3239XHigh VoltageSi43130.18 um, RFSi324X0.18 umSi432X0.6 um - 0.8 um BiCMOSSi3291X0.25 umSi433X0.18 um, RFSi3402XHigh VoltageSi435X0.11 umSi3404XHigh VoltageSi436X0.11 umSi3406XHigh VoltageSi442X0.6 um - 0.8 um BiCMOSSi3407X0.18 um, OTPSi44300.18 um, RFSi3407XHigh VoltageSi44310.18 um, RFSi34500.18 umSi44320.18 um, RFSi34520.18 um, OTPSi44380.11 umSi3452High VoltageSi445X0.11 umSi34530.18 um, OTPSi446X0.11 umSi3453High VoltageSi46XX55 nmSi34540.18 um, OTPSi47080.11 umSi3454High VoltageSi47090.11 umSi3455High VoltageSi470X-C190.11 umSi34560.35 um, embedded flashSi4732-AXX0.11 umSi3456High VoltageSi474X0.13 umSi34570.18 um, OTPSi475X0.11 umSi3457High VoltageSi476X0.11 umSi34580.18 um, OTPSi477X0.11 umSi3458High VoltageSi47800.13 umQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 10/85
Part NumberTechnologyPart NumberTechnologySi47800.35 um, embedded flashSi5315X-A0.18 um, RFSi479XX55 nmSi5315X-C0.13 umSi47XX-B1X0.13 umSi53160.13 umSi47XX-B2X0.13 umSi53170.13 umSi47XX-B3X0.13 umSi53190.13 umSi47XX-C3X0.13 umSi5320X0.18 um, RFSi47XX-C4X0.13 umSI53212X0.18 um, RFSi47XX-D0.11 umSI5321-H0.25 umSi482X0.11 umSI53220.13 umSi48300.13 umSI53230.13 umSi48340.13 umSI53240.13 umSi48360.11 umSI53250.13 umSi483X-B0.11 umSI53260.13 umSi484X0.11 umSI53270.13 umSi49XX0.6 um - 0.8 um BiCMOSSI53280.13 umSi50100.25 umSi5330X0.13 umSi501220.13 umSi5331X0.13 umSi501220.18 umSi5332X0.13 umSi50130.25 umSi5334X0.13 umSi502X0.25 umSi5335X0.13 umSi504X0.13 umSi5336X0.13 umSi510X0.15 umSi5338X0.13 umSi511X0.15 umSI5339X0.13 umSi512X0.18 umSi534X55 nmSi5211X0.18 umSi535X0.13 umSi5213X0.18 um, RFSi53640.25 umSi5214X0.18 um, RFSi53650.13 umSi5216X0.18 um, RFSi53660.13 umSI5220X0.18 um, RFSi53670.13 umSI5221X0.18 um, RFSi53680.13 umSI5225X0.13 umSi53690.13 umSi530190.18 um, RFSi5371X55 nmSi5301C0.13 umSi5372X55 nmSi531020.18 umSi5374X0.13 umSi531060.18 um, RFSi5375X0.13 umSi531080.18 um, RFSi5376X0.13 umSi5310-C0.25 umSi5380X55 nmSi5311X0.18 um, RFSi5381X55 nmQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 11/85
Part NumberTechnologyPart NumberTechnologySi5382X55 nmSI8271-D-YDI0.25 umSi5383X0.18 um, embedded flashSI8273-D-IDIHigh VoltageSi5383X55 nmSi827X0.25 umSi5384X0.18 um, embedded flashSi827XHigh VoltageSi5384X55 nmSi828X0.25 umSI5386X55 nmSi828XHigh VoltageSI5388X55 nmSi83XX0.18 umSI5388X90 nm, embedded flashSi83XX0.25 umSI5389X55 nmSi84XX0.25 umSI5389X90 nm, embedded flashSi850X0.315 um - 0.35 umSI539X55 nmSi851X0.315 um - 0.35 umSi5409X0.18 um, OTPSi854X0.6 um - 1.0 umSi70050.18 um, RFSi86XX0.25 umSi70060.18 um, embedded flashSi87XX0.25 umSi70070.18 um, embedded flashSi87XXHigh VoltageSi70080.18 um, embedded flashSi88XX0.25 umSi701X0.18 um, embedded flashSi890X0.18 um, OTPSi702X0.18 um, embedded flashSi890X0.25 umSi703X0.18 um, OTPSi892X0.25 umSi705X-A100.18 um, OTPSI8SX0.25 umSi705X-A200.18 um, embedded flashSI8SXHigh VoltageSI7060X0.18 umSiM3XXXX0.18 um, embedded flashSi72X0.18 umSL1510.18 um, RFSi803X0.25 umSL15100CZC-10.35 um, EEPROMSi804X0.25 umSL1530.18 um, RFSi805X0.25 umSL15300DZC-560.35 um, EEPROMSi806X0.25 umSL15300EZC-700.35 um, EEPROMSi822X0.25 umSL15300EZC-750.35 um, EEPROMSi822XHigh VoltageSL1580.18 um, RFSi823X0.25 umSL16XX0.18 um, RFSi823XHigh VoltageSL188X0.18 um, RFSi824X0.25 umSL23040.18 um, RFSi824XHigh VoltageSL23050.18 um, RFSi825X0.25 um, embedded flashSL23090.18 um, RFSi825XHigh VoltageSL23EP0.18 um, RFSi826X0.25 umSL281XX0.18 umSi826XHigh VoltageSL28500.25 umSI8271-D-IDI0.25 umSL28540.25 umQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 12/85
Part NumberTechnologyPart NumberTechnologySL28610.18 um, RFTS1001High VoltageSL28640.25 umTS1002High VoltageSL28740.18 umTS10030.18 umSL287700.18 umTS1004High VoltageSL287730.18 umTS10050.18 umSL287740.18 umTS11XX0.6 um - 1.0 umSL287750.18 um, RFTS12XXHigh VoltageSL287760.18 um, RFTS30010.18 umSL287790.18 umTS30020.18 umSL28DB0.25 umTS3003High VoltageSL28EB6360.18 umTS3004High VoltageSL28EB7170.18 umTS3005High VoltageSL28EB7190.18 umTS3006High VoltageSL28EB7200.18 umTS3300High VoltageSL28EB7210.18 umTS331X0.18 umSL28EB7250.18 um, RFTS4XXXHigh VoltageSL28EB7310.18 um, RFTS6XXX0.6 um - 1.0 umSL28EB7350.18 um, RFTS7XXX0.18 umSL28EB7400.18 umTS9XXX0.18 umSL28EB7420.18 umTSAXXXX0.18 umSL28EB7450.18 umTSM12XX0.18 umSL28EB7740.18 umTSM60XX0.6 um - 1.0 umSL28EB7810.18 um, RFTSM91XX0.18 umSL28EB7970.18 um, RFTSM92XX0.18 umSL28PCIE060.18 umTSM93XX0.18 umSL28PCIE100.18 umTSM96XX0.6 um - 1.0 umSL28PCIE140.18 um, RFTSM97XX0.18 umSL28PCIE160.18 umTSM98XX0.18 umSL28PCIE190.18 um, RFTSM99XX0.6 um - 1.0 umSL28PCIE20.18 umWF20040 nmSL28PCIE300.18 umWFM20040 nmSL28PCIE500.18 um, RFZGM90 nm, embedded flashSL28SR0.18 umZM51X0.13 um, embedded flashSL38000.18 um, RFZW0X0.18 um, embedded flashSL380200.18 um, OTPSL38160.18 um, RFSL38160CZC-30B0.35 um, EEPROMQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 13/85
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Failure Rate Estimation by Fab TechnologyFailure in Time (FIT)A long-term, steady-state failure rate is often required by circuit and system engineers for allocations of the failure ratesat the component level during system design. FIT, which stands for failure-in-time, is a widely-used term to describefailure rates of electronic components, and as used here, represents the number of failures in a billion hours ofoperation. FIT rates are reported in the following section as curves and in tables for specific temperatures andassumptions.Mean Time to Failure (MTTF)Another way to express failure rates is by mean time to failure (MTTF). MTTF is the inverse of the FIT rate and is usefulfor repair and maintenance planning. This relationship can be seen by examining the units of each measure: MTTF isgiven in time/failure; FIT is given in failure/time. MTTF is reported in the tables following the FIT rate curves for eachspecific fab technology.Failure Rate Calculation MethodLong-term failure rates are estimated by applying the Arrhenius equation to data collected from long term operating lifetests. A confidence factor is applied based upon the sample size and number of failures to estimate the maximumfailure rate at a specific confidence level. The calculation details are provided in the table below each of the followingFIT rate curves.Quarterly Quality & Reliability Report 20Q4 QR ReportPg. 15/85
FIT Rate Curves and DataProcess – 40 nmQuarterly Quality & Reliability Report 20Q4 QR ReportPg. 16/85
Reliability FIT Calculations for temperature accelerationSingle Point Calculation for 40 nmVariables:90%60%Confidence LevelTja [C]5050Junction Temperature at operating conditionTsa [C]125125Ambient Temperature at stressTjs [C]140140Junction Temperature at stress (assume 15C rise)Ea0.70.7Energy ActivationD319319Equivalent Devices stressed (Assuming 1000hrs per device)H10001000Number of hours on stressF00Number of failuresP0.10.4Confidence Level [.1 90%; .4 60%]Constants:k8.61E-05Calculated Values:Af239.4v2.0DH318816X24.6FIT30.2MTTFMTTF3.3E 073783.58.61E-05 Boltzman's constant [eV/K]239.42.03188161.812.08.3E 079507.7Acceleration Factor: [exp(Ea/k*(1/(Tja 273.15) - (1/(Tjs 273.15))]degrees of freedom [2(F 1)]Total device hours D*HChi-Square Distribution ValueFailures in time [failures / 1xE9 hours] [X2/(2*AF*D*H)*1E9]Mean Time To Failure [hours] (Note: MTTF is 1/FIT)Mean Time To Failure [years] (Note: MTTF is 1/FIT)FIT Estimation Curves for 40 .339.328.320.515.011.18.26.24.73.52.7FIT 5.5352.3481.4652.4877.01169.61
data are collected on a continual basis as qualification, production and reliability monitors are completed. The report is published and updated quarterly to provide customers visibility to the most recent information. The Quality Trend charts on page 5 are shown on a rolling five-year basis.
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