ECE 410: VLSI Design Course Lecture Notes - Michigan State University
ECE 410: VLSI DesignCourse Lecture Notes(Uyemura textbook)Professor Fathi SalemMichigan State UniversityWe will be updating the notes this Semester.ECE 410, Prof. F. SalemLecture Notes Page 2.1
Electronics Revolution Age of electronics– microcontrollers, DSPs, andother VLSI chips areeverywhere(Digital Camera), Camcorder, PDAsMP3/CD PlayerLaptopCell phoneGames: Nintendo; xbox, etc. Electronics of today andtomorrow– higher performance (speed)circuits– low power circuits forportable applications– more mixed signal emphasis wireless hardware high performance signalprocessing Sensors, actuators, andmicrosystemsECE 410, Prof. F. SalemLecture Notes Page 2.2
Figure 1.1 (p. 2)The VLSI designfunnel.ECE 410, Prof. F. SalemLecture Notes Page 2.3
Figure 1.2(p.4)Generaloverview ofthe designheirarchy.ECE 410, Prof. F. SalemLecture Notes Page 2.4
VLSI Design Flow VLSI– very large scaleintegration– lots of transistorsintegrated on asingle chipTopDownDesignSystem SpecificationsAbstract High-level ModelVHDL, Verilog HDLFunctional SimulationLogic SynthesisDigital CellLibrary Top Down DesignPost-LayoutSimulation– digital mainly– coded design– ECE 411Chip FloorplanningChip-level IntegrationMixed-signalAnalog BlocksParasitic ExtractionManufacturingFinished VLSI ChipLVS(layout vs. schematic) Bottom Up DesignDRC– cell performance– Analog/mixed signal– ECE 410(design rule check)ProcessDesign RulesProcessDesignPhysical DesignSimulationVLSI DesignProcedureProcessCharacterizationProcess ModelsSPICESchematic DesignBottomUpDesignFunctional/Timing/Performance SpecificationsECE 410, Prof. F. SalemProcess Capabilitiesand RequirementsLecture Notes Page 2.5
Integrated Circuit Technologies Why does CMOS dominate--Now?– other technologies passive circuits III-V devices Silicon BJT CMOS dominates because:––––––Silicon is cheaper preferred over other materialsphysics of CMOS is easier to understand?CMOS is easier to implement/fabricateCMOS provides lower power-delay productCMOS is lowest powercan get more CMOS transistors/functions in same chip area BUT! CMOS is not the fastest technology!– BJT and III-V devices are fasterECE 410, Prof. F. SalemLecture Notes Page 2.6
MOSFET Physical View Physical Structure of a MOSFET Devicecritical dimension “feature size” Schematic Symbol for 4-terminal MOSFETgatesourcedrainSubstrate, bulk, well, or back gate Simplified SymbolsECE 410, Prof. F. SalemnMOSpMOSLecture Notes Page 2.7
CMOS Technology Trends Variations over time––––# transistors / chip: increasing with timepower / transistor: decreasing with time (constant power density)device channel length: decreasing with timepower supply voltage: decreasing with timetransistors /chipchannel lengthpower /transistorsupply voltageref: Kuo and Lou, Low-Voltage CMOS VLSI Circuits, Fig. 1.3, p. 3low power/transistor is critical for future ICsECE 410, Prof. F. SalemLecture Notes Page 2.8
Moore’s Law In 1965, Gordon Moore realized there 2 Billionwas a striking trend; each newgeneration of memory chip containedroughly twice as much capacity as itspredecessor, and each chip wasreleased within 18-24 months of theprevious chip. He reasoned, computingpower would rise exponentially over10µmrelatively brief periods of time.1µm0.35µm 45 nmFeature Size(ref: e.htm) Moore's observation, now known asMoore's Law, described a trend thathas continued and is still remarkablyaccurate. In 26 years the number oftransistors on a chip has increasedmore than 3,200 times, from 2,300 onthe 4004 in 1971 to 7.5 million on thePentium II processor.Power Supply TendsDigital Core Voltage Projectionsfrom the 2000 ITRS*1.8 V1.5 V1.2 V0.9 V0.6 VYear1999 2001Feature Size (nm) 180 1300.6 V200420082011201490604030* 000final.pdfECE 410, Prof. F. SalemLecture Notes Page 2.9
“Electronics” Building block(s) MOSFET Device-- 1950 to 2020 New elements in nano technologies areemerging. These include:––––––Fin-TransistorMemristor: memory resistor- see IEEE SpectrumNano-tubesMolecular devicesQuantum dotsEtc.ECE 410, Prof. F. SalemLecture Notes Page 2.10
VLSI Design Flow VLSI– very large scaleintegration– lots of transistorsintegrated on asingle chipTopDownDesignSystem SpecificationsAbstract High-level ModelVHDL, Verilog HDLFunctional SimulationLogic SynthesisDigital CellLibrary Top Down DesignPost-LayoutSimulation– digital mainly– coded design– ECE 411Chip FloorplanningChip-level IntegrationMixed-signalAnalog BlocksManufacturingParasitic ExtractionFinished VLSI ChipLVS(layout vs. schematic) Bottom Up DesignDRC– cell performance– Analog/mixed signal– ECE 410(design rule check)ProcessCharacterizationProcessDesign RulesProcessDesignPhysical DesignSimulationVLSI DesignProcedureProcess ModelsSPICESchematic DesignBottomUpDesignFunctional/Timing/Performance SpecificationsECE 410, Prof. F. SalemProcess Capabilitiesand RequirementsLecture Notes Page 2.11
MOSFET Physical View Physical Structure of a MOSFET Devicecritical dimension “feature size” Schematic Symbol for 4-terminal MOSFETgatesourcedrainSubstrate, bulk, well, or back gate Simplified SymbolsECE 410, Prof. F. SalemnMOSpMOSLecture Notes Page 2.12
What is a MOSFET? Digital integrated circuits rely on transistor switches– most common device for digital and mixed signal: MOSFET DefinitionsV– MOS Metal Oxide Semiconductor physical layers of the devicePolyOxide– FET Field Effect Transistor What field? What does the field do?Semi Are other fields important?– CMOS Complementary -drainsilicon substrate use of both nMOS and pMOS to forma circuit with lowest power consumption. Primary Features––––gate; gate oxide (insulator)– very thin ( 10 (-10))-- exaggerated in Fig.source and drainchannelbulk/substrate NOTE: “Poly” stands for polysilicon in modern MOSFETsECE 410, Prof. F. SalemLecture Notes Page 2.13
Fundamental Relations in MOSFET Electric FieldsQ – fundamental equationE electric field: E V/dVgateinsulatorsource - -Q-- -channel----– vertical field through gate oxide--drain- -silicon substrate determines charge induced in channel– horizontal field across channel determines source-to-drain current flow Capacitance– fundamental equations capacitor charge: Q CV capacitance: C ε A/d TopviewW– charge balance on capacitor, Q Q-L charge on gate is balanced by charge in channel what is the source of channel charge? where does it come from?ECE 410, Prof. F. SalemLecture Notes Page 2.14
CMOS Cross Section View Cross section of a 2 metal, 1 poly CMOS processTypical MOSFET Device (nMOS) Layout (top view) of the devices above (partial, simplified)ECE 410, Prof. F. SalemLecture Notes Page 2.15
CMOS Circuit Basics CMOS complementary MOS– uses 2 types of MOSFETsdrainsourcegategateto create logic functionssource nMOSdrainnMOS pMOSpMOS CMOS Power SupplyVDD– typically single power supply– VDD, with Ground referenceVDD typically uses single power supply VDD ranges from (0.6V) 1V to 5V Logic Levels (voltage-based)– all voltages between 0V and VDD– Logic ‘1’ VDD– Logic ‘0’ ground 0VECE 410, Prof. F. Salem -CMOSlogiccircuit CMOSlogiccircuitVVDDlogic 1voltagesundefinedlogic 0voltagesLecture Notes Page 2.16
Transistor Switching Characteristics nMOSdrain– switching behavior on closed, when Vin Vtn off open, when Vin VtnVin pMOSgateVoutnMOSVgs Vtn on Vgs-– pMOSVin Vout (drain)1?device is OFF0Vs VDD 1 device is ONpMOSoffononpMOS on closed, when Vin VDD - Vtp off open, when Vin VDD - Vtp – nMOSVin Vout (drain)1Vs 0 device is ON0?device is OFFVinVDDVDD- Vtp source– switching behavior Digital BehaviornMOS VsgVinVtnsourcepMOSVsg Vtp onVsg VDD - VingatedrainoffnMOSVoutRule to Remember‘source’ is at lowest potential for nMOS highest potential for pMOSECE 410, Prof. F. SalemLecture Notes Page 2.17
MOSFET Pass Characteristics Each type of transistor is better at passing (to output) one digitalvoltage than the other– nMOS passes a good low (0) but not a good high (1)– pMOS passes a good high (1) but not a good low (0)VDDVDDnMOSon when gateis ‘high’VDD0V0VpMOSVDD0VVy VDDPasses a good lowMax high is VDD-VtnVy VDD-VtnVy 0 V0Von when gateis ‘low’ Vgs Vtn-Vsg Vtp Passes a good highMin low is Vtp Vy Vtp Rule to Remember‘source’ is at lowest potential (nMOS) and highest potential (pMOS)ECE 410, Prof. F. SalemLecture Notes Page 2.18
MOSFET Terminal Voltages How do you determine one terminal voltage if other 2 are known?– nMOS case 1) if Vg Vi Vtn, then Vo ViVo– here Vi is the “source” so the nMOS will pass Vi to Vo case 2) if Vg Vi Vtn, then Vo Vg-VtnVg(Vg-Vi Vtn)(Vg-Vi Vtn)– here Vo is the “source” so the nMOS output is limitedVi Example (Vtn 0.5V):Vg 5V, Vi 2V Vo 2VVg 2V, Vi 2V Vo 1.5VFor nMOS,max(Vo) Vg-Vtn– pMOS case 1) if Vg Vi - Vtp , then Vo ViVi(Vi-Vg Vtp )– here Vi is the “source” so the pMOS will pass Vi to Vo case 2) if Vg Vi - Vtp , then Vo Vg Vtp (Vi-Vg Vtp )Vg– here Vo is the “source” so the pMOS output is limitedVo Example (Vtp -0.5V):Vg 2V, Vi 5V Vo 5VVg 2V, Vi 2V Vo 2.5VECE 410, Prof. F. SalemFor pMOS,min(Vo) Vg Vtp Lecture Notes Page 2.19
Switch-Level Boolean Logic Logic gates are created by using sets of controlled switches Characteristics of an assert-high switchnMOS acts like anassert-high switch ?– y x A, i.e. y x iff A 1Series switches AND function(iff if and only if)Parallel switches OR functionECE 410, Prof. F. SalemLecture Notes Page 2.20
Switch-Level Boolean Logic Characteristics of an assert-low switchy xy ?– y x A, i.e. y x if A 0Series assert-low switches ?abpMOS acts like anassert-low switcherror in figure 2.5NOT function, combining asserthigh and assert-low switchesNORRemember This?a b a b, a b a bDeMorgan relationsa 1 SW1 closed, SW2 open y 0 aa 0 SW1 open, SW2 closed y 1 aECE 410, Prof. F. SalemLecture Notes Page 2.21
CMOS “Push-Pull” Logic CMOS Push-Pull Networks– pMOS “on” when input is low pushes output highinputs– nMOSassert-low pMOSlogicoutputassert-highnMOSlogic “on” when input is high pulls output low- only one logic network (p or n) is required to produce (1/2-) the logic function?- but the complementary set allows the “load” to be turned off for zero static powerdissipationpMOSnMOSVSS groundECE 410, Prof. F. SalemLecture Notes Page 2.22
Review: Basic Transistor OperationCMOS Circuit Basicsinputsassert-low pMOSlogicoutputassert-highnMOSlogic VsgVinsourcepMOSVsg Vtp onVsg VDD - VingatedraindrainVingatenMOSVgs Vtn on Vgs-sourceVg Vin Vout0 1 on closed1 ? off openVg Vin Vout0 ? off open1 0 on closed‘source’ is at lowest potential (nMOS) and highest potential (pMOS) VDDnMOSVDD0V0VpMOS0VVDD0VVy VDD Vgs VtnVy VDD-VtnVy 0 VpMOSVDDVDD- Vtp offononVtnoffnMOSCMOS Pass CharacteristicsVDDVinVsg Vtp nMOS–––0 in 0 outVDD in VDD-Vtn outstrong ‘0’, weak ‘1’pMOS–––VDD in VDD out0 in Vtp outstrong ‘1’, weak ‘0’Vy Vtp ECE 410, Prof. F. SalemLecture Notes Page 2.23
Review: Switch-Level Boolean Logic assert-high switch– y x A, i.e. y x iff A 1– series AND– parallel OR assert-low switch– y x A, i.e. y x if A 0– series NOR xab– parallel NANDECE 410, Prof. F. SalemLecture Notes Page 2.24
Creating Logic Gates in CMOS All standard Boolean logic functions (INV, NAND, OR, etc.) can beproduced in CMOS push-pull circuits. Rules for constructing logic gates using CMOS––––use a complementary nMOS/pMOS pair for each inputconnect the output to VDD through pMOS txsconnect the output to ground through nMOS txsensure the output is always either high or lowinputs CMOS produces “inverting” logic– CMOS gates are based on the inverter– outputs are always inverted logic functionsassert-low pMOSlogicoutputassert-highnMOSlogice.g., NOR, NAND rather than OR, AND Logic PropertiesDeMorgan’s Rules(a b)’ a’ b’(a b)’ a’ b’Useful Logic Properties1 x 1 0 x x1 x x 0 x 0x x’ 1 x x’ 0a a a a a aab ac a (b c)ECE 410, Prof. F. SalemProperties which can be proven(a b)(a c) a bca a'b a bLecture Notes Page 2.25
CMOS Inverter Inverter Symbol Inverter Functionx toggle binary logic of a signalyTable Inverter Switch Operation Inverterx Truthy x VDD01Vin VDD10 CMOS Inverter Schematicinput low output highnMOS off/openpMOS on/closedpMOS “on” output high (1)input high output lownMOS on/closedpMOS off/opennMOS “on” output low (0)ECE 410, Prof. F. Salem VsgVinpMOSVout Vin Vgs-nMOSLecture Notes Page 2.26
nMOS Logic Gates Study nMOS logic first, more simple than CMOS nMOS Logic– assume a resistive load to VDD– nMOS switches pull output low based on inputs(a) nMOS is off output is high (1)nMOS Inverter(b) nMOS is on output is low (0)nMOS NORnMOS NANDc abc a b parallel switches OR functionnMOS pulls low (NOTs the output) series switches AND functionnMOS pulls low (NOTs the output)ECE 410, Prof. F. SalemLecture Notes Page 2.27
CMOS NOR Gate NOR Symbol NOR Truth Tablex yxx yy Karnaugh mapy 01010100x00110101x y1000g(x,y) x y 1 x 0 y 0 construct Sum of Products equation with all termseach term represents a MOSFET path to theoutput‘1’ terms are connected to VDD via pMOS‘0’ terms are connected to ground via nMOSECE 410, Prof. F. SalemLecture Notes Page 2.28
CMOS NOR Gate CMOS NOR Schematicg(x,y) x y 1 x 0 y 0x yg(x,y) x y xoutput is LOW if x OR y is true parallel nMOSoutput is HIGH when x AND y are false series pMOS Important Points– series-parallel arrangement when nMOS in series, pMOS in parallel, and visa versa true for all CMOS logic gates allows us to construct more complex logic functionsECE 410, Prof. F. SalemLecture Notes Page 2.29
CMOS NAND Gate NAND Symbol Truth Tablex yx yx0011x yy CMOS Schematic0101 K-map1110y 01011110xg(x,y) (x y 1) (x y 1) (x y 1)(x y 0)x x. y.0 x .1 y .1 g(x,y) x yyx output is LOW if x AND y are true series nMOSoutput is HIGH when x OR y is false parallel pMOSECE 410, Prof. F. SalemLecture Notes Page 2.30
3-Input Gates NOR3 Alternate Schematicxx y zxyz what function?yzg(x,y) x y z NAND3xxyyxg(x,y) x y z zxxyzxyz znote shared gate inputs yyis input order important?in series, parallel, both?schematic resembles how thecircuit will look in physical layoutECE 410, Prof. F. SalemLecture Notes Page 2.31
Review: CMOS NAND/NOR Gates NOR Schematic NAND Schematicxxyg(x,y) x yg(x,y) x yyxx output is LOW if x OR y is true parallel nMOSoutput is HIGH when x AND y are false series pMOS output is LOW if x AND y are true series nMOSoutput is HIGH when x OR y is false parallel pMOSECE 410, Prof. F. SalemLecture Notes Page 2.32
Complex Combinational Logic General logic functions– for examplef a (b c),f (d e) a (b c) How do we construct the CMOS gate?– use DeMorgan principles to modify expression construct nMOS and pMOS networksa b a ba b a b– use Structured Logic AOI (AND OR INV) OAI (OR AND INV)ECE 410, Prof. F. SalemLecture Notes Page 2.33
Using DeMorgan pMOS and bubble pushing DeMorgan Relations– Parallel-connected pMOSa b a b– NAND-OR rule bubble pushing illustrationxxyyxequivalenttox yx yyx yxyg(x,y) x y x y assert-low OR creates NAND function bubbles inversions– Series-connected pMOS– NOR-AND rulexya b a bxequivalenttox yyxxx yx yyyg(x,y) x y x yto implement pMOS this way, must push all bubblesto the inputs and remove all NAND/NOR output bubblesECE 410, Prof. F. Salem assert-low AND creates NOR functionLecture Notes Page 2.34
Rules for Constructing CMOS GatesThe Mathematical Method Given a logic functionF f(a, b, c) Reduce (using DeMorgan) to eliminate inverted operations– inverted variables are OK, but not operations (NAND, NOR) Form pMOS network by complementing the inputsFp f(a, b, c) Form the nMOS network by complementing the outputFn f(a, b, c) F Construct Fn and Fp using AND/OR series/parallelMOSFET structuresx– series AND, parallel OREXAMPLE:g(x,y) x yyF ab xFp a b a b;OR/parallelFn ab ab;AND/seriesECE 410, Prof. F. SalemLecture Notes Page 2.35
CMOS Combinational Logic Example Construct a CMOS logic gate to implement the function:F a (b c)aFb14 transistors (cascaded gates)c pMOS nMOS– Apply DeMorgan expansionsF a (b c)F a (b c)– Invert output for nMOS6 transistors(CMOS)– Invert inputs for pMOSFp a (b c)Fn a (b c)– Apply DeMorgannone neededab– Resulting Schematic– Resulting SchematiccF a(b c)aF a(b c)bcaabcbcF a(b c)ECE 410, Prof. F. SalemLecture Notes Page 2.36
Structured Logic Recall CMOS is inherently Inverting logic Can use structured circuits to implement general logicfunctions AOI: implements logic function in the orderAND, OR, NOT (Invert)– Example: F a b c d operation order: i) a AND b, c AND d, ii) (ab) OR (cd), iii) NOT– Inverted Sum-of-Products (SOP) form OAI: implements logic function in the orderOR, AND, NOT (Invert)– Example: G (x y) (z w) operation order: i) x OR y, z OR w, ii) (x y) AND (z w), iii) NOT– Inverted Product-of-Sums (POS) form Use a structured CMOS array to realize such functionsECE 410, Prof. F. SalemLecture Notes Page 2.37
AOI/OAI nMOS Circuits nMOS AOI structureF a b c d– series txs in parallel nMOS OAI structure– series of parallel txsF (a e) (b f)eXbXerror in textbook Figure 2.45ECE 410, Prof. F. SalemLecture Notes Page 2.38
AOI/OAI pMOS Circuits pMOS AOI structure– series of parallel txs– opposite of nMOS pMOS OAI structure– series txs in parallel– opposite of nMOS(series/parallel)(series/parallel)Complete CMOSAOI/OAI circuitsECE 410, Prof. F. SalemLecture Notes Page 2.39
Implementing Logic in CMOS Reducing Logic Functions– fewest operations fewest txs– minimized function to eliminate txs– Example: x y x z x v x (y z v)5 operations:3 AND, 2 OR# txs 3 operations:1 AND, 2 OR# txs Suggested approach to implement a CMOS logic function– create nMOS network invert output reduce function, use DeMorgan to eliminate NANDs/NORs implement using series for AND and parallel for OR– create pMOS network complement each operation in nMOS network– i.e. make parallel into series and visa versaECE 410, Prof. F. SalemLecture Notes Page 2.40
CMOS Logic Example Construct the function below in CMOSF a b (c d); remember AND operations occur before ORFn a b (c d) nMOS– Group 2: c & d in parallel– Group 1: b in series with G2– Group 3: a parallel to G1/G2 pMOS– Group 2: c & d in series– Group 1: b parallel to G2– Group 3: a in series with G1/G2 Circuit has an OAOI organization (AOI with extra OR)ECE 410, Prof. F. SalemLecture Notes Page 2.41
Another Combinational Logic Example Construct a CMOS logic gate which implements thefunction:F a (b c) pMOS nMOS– Apply DeMorgan expansionsnone needed– Invert output for nMOSFn a (b c)– Invert inputs for pMOSFp a (b c)– Resulting Schematic ?– Apply DeMorganFn a (b c )Fn a (b c)– Resulting Schematic ?ECE 410, Prof. F. SalemLecture Notes Page 2.42
Yet Another Combinational Logic Example Implement the function below by constructing the nMOS networkand complementing operations for the pMOS:F a b (a c) nMOSab– Invert Outputc Fn a b (a c) a b (a c)– Eliminate NANDs and NORsF a b (a c)a Fn a b ( a c)– Reduce Function Fn a (b c)bc– Resulting Schematic ?– Complement operations for pMOS Fp a (b c)ECE 410, Prof. F. SalemLecture Notes Page 2.43
XOR and XNOR Exclusive-OR (XOR)– a b a b a b– not AOI form Exclusive-NOR– a b a b a b– inverse of XOR XOR/XNOR in AOI form– XOR: a b a b a b, formed by complementing XNOR above– XNOR: a b a b a b, formed by complementing XORthus, interchanging a and a (or b and b) converts from XOR to XNORECE 410, Prof. F. SalemLecture Notes Page 2.44
XOR and XNOR AOI Schematicabbaanote: see textbook, figure 2.57–XOR: a b a b a b–XNOR: a b a b a bECE 410, Prof. F. SalemLecture Notes Page 2.45
CMOS Transmission Gatesrecall: pMOS passes a good ‘1’and nMOS passes a good ‘0’ Function– gated switch, capable of passing both ‘1’ and ‘0’ Formed by a parallel nMOS and pMOS txschematicsymbol Controlled by gate select signals, s and s– if s 1, y x, switch is closed, txs are on– if s 0, y unknown (high impedance),y x s, for s 1switch open, txs offECE 410, Prof. F. SalemLecture Notes Page 2.46
Transmission Gate Logic Functions TG circuits used extensively in CMOS– good switch, can pass full range of voltage (VDD-ground) 2-to-1 MUX using TGsF Po s P1 sECE 410, Prof. F. SalemLecture Notes Page 2.47
More TG Functions TG XOR and XNOR Gatesa b a b a b a b, b 1a b a b a b a b, b 1 a b, b 1 a b, b 1 a, a 1 Using TGs instead of“static CMOS”f a ab a b, a 1– TG OR gateECE 410, Prof. F. Salemf a bLecture Notes Page 2.48
Figure 2.64 (p. 59)An XNOR gate that uses both TGs and FETs.Lecture Notes Page 2.49
Figure 2.65 (p. 60)Complementary clocking signals.Lecture Notes Page 2.50
Figure 2.66 (p. 61)Behavior of a clocked TG.Lecture Notes Page 2.51
Figure 2.67 (p. 61)Data synchronization using transmission gates.Lecture Notes Page 2.52
Figure 2.68 (p. 62)Block-level system timing diagram.Lecture Notes Page 2.53
Figure 2.69 (p. 62)Control of binary words using clocking planes.Lecture Notes Page 2.54
- # transistors / chip : increasing with time - power / transistor : decreasing with time (constant power density) - device channel length : decreasing with time - power supply voltage : decreasing with time ref: Kuo and Lou, Low-Voltage CMOS VLSI Circuits, Fig. 1.3, p. 3 transistors / chip power / transistor channel length supply voltage
ECE 410: VLSI Design Course Lecture Notes (Uyemura textbook) Professor Andrew Mason Michigan State University. ECE 410, Prof. A. Mason Lecture Notes Page 2.2 CMOS Circuit Basics nMOS gate gate drain source . Review: Basic Transistor Operation CMOS Circuit Basics nMOS Æ n–0 i 0 out
VLSI IC would imply digital VLSI ICs only and whenever we want to discuss about analog or mixed signal ICs it will be mentioned explicitly. Also, in this course the terms ICs and chips would mean VLSI ICs and chips. This course is concerned with algorithms required to automate the three steps “DESIGN-VERIFICATION-TEST” for Digital VLSI ICs.
ECE 429: Audio Electronics ECE 461: Introduction to VLSI ECE 466: RF and Microwave Integrated Circuits ECE 468: Advanced Analog CMOS Circuits and Systems ECE 469: High Speed Integrated Electronics . Computer Design and Computer Engineering Concentration Requirements . ECE 401: Advanced Computer Architecture Two of the following .
Electrical & Computer Engineering Student Affairs Office ece.ucsd.edu . ECE 174. ECE 175A: ECE 175B* Year 4: ECE 171B* ECE 172A* DESIGN. PROF. ELECTIVE: PROF. ELECTIVE. TECH. ELECTIVE: TECH. ELECTIVE. MACHINE LEARNING & CONTROLS DEPTH *Pick one of ECE 171B, 172A or 175B to complete the 4th Depth course requirement.
VL2114 RF VLSI Design 3 0 0 3 VL2115 High Speed VLSI 3 0 0 3 VL2116 Magneto-electronics 3 0 0 3 VL2117 VLSI interconnects and its design techniques 3 0 0 3 VL2118 Digital HDL Design and Verification 3 0 0 3 VL2119* Computational Aspects of VLSI 3 0 0 3 VL2120* Computational Intelligence 3 0 0 3
Title: Cisco_pass4lead_300-410_2021-04-22_by_Nil_145 Author: pass4lead Subject: Cisco_pass4lead_300-410_2021-04-22_by_Nil_145 Keywords: Latest Cisco exams,latest 300-410 dumps,300-410 pdf,300-410 vce,300-410 dumps,300-410 exam questions,300-410 new questions,300-410 actual
Title: Cisco_pass4itsure_300-410_2021-04-06_by_benz_133 Author: pass4itsure Subject: Cisco_pass4itsure_300-410_2021-04-06_by_benz_133 Keywords: Latest Cisco exams,latest 300-410 dumps,300-410 pdf,300-410 vce,300-410 dumps,300-410 exam questions,300-410 new questions,300-410 actual
Bon Secours Balt. Health System Joanna Pi-Sunyer 410.362.3244 410.362.3443 Broadway Services Barbara Pettit 410.563.6956 410.563.6960 Brown Capital Management Charlene Gross 410.837.3243 410.837.6525 Cangene bioPharma Charity Brown 410.843.5000 410.332.7532 Catalyst IT Services, Incor
