MRAM Technology And Business 2019 - I-Micronews

EMBEDDED STT-MRAM BUSINESSKey partnerships and developments for the top players. The top foundry players are all preparing for 28/22nm embedded STT-MRAM. Intel has confirmed that its MRAM is nowachieving high yields making mass production viable.Foundry / IDM(To be ed ShortTerm ApplicationCMOS bulk22nm planarFD-SOI 22nmplanarFD-SOI 28nmplanarCMOS bulk28/22nm planarCMOS 22nmFinFET(sampling)(sampling)(in mass production)(in development)(sampling)“Slow” SRAMeFlash“Slow” SRAMeFlash“Slow” SRAMeFlash“Slow” SRAM28/22nm“Slow” SRAM 2019 www.yole.fr MRAM Technology and Business Sample17

TIME-TO-MARKET FOR (STT-)MRAM PLAYERSBy applications, for leading players – fabless/IP/IDM (stand-alone) and foundry/IDM (embedded) playersEmbeddedEmbedded Cache Memory(SRAM, eDRAM) – Mobile AP Yole Development, July 2019Embedded Cache Memory(SRAM, eDRAM) – High-End CPUEmbedded Memory (slow SRAM)Embedded Data/Code Storage(eFlash)Stand-alonePersistent Memory (NVDIMM)Enterprise Storage (SCM)Industrial, transportation andother applications2018201920202021202220232024Entrance into the (STT-)MRAM market (commercial product availability) 2019 www.yole.fr MRAM Technology and Business Sample18

(STT-)MRAM MARKET FORECAST 2019 www.yole.fr MRAM Technology and Business Sample19

DENSITY AND PRICE EVOLUTION 2019 www.yole.fr MRAM Technology and Business Sample20

CHINA MRAM DEVELOPMENTS 2019 www.yole.fr MRAM Technology and Business Sample21

MRAM MANUFACTURING 2019 www.yole.fr MRAM Technology and Business Sample22

YOLE GROUP OF COMPANIES RELATED REPORTSYole DéveloppementDRAM & NAND Service– Memory ResearchStatus of the MemoryIndustry 2019Emerging Non-VolatileMemory 2018Memory Packaging Marketand Technology Report2017Contact ourSales Teamfor moreinformation 2019 www.yole.fr MRAM Technology and Business Sample23

YOLE GROUP OF COMPANIES RELATED REPORTSSystem Plus ConsultingContact ourSales Teamfor moreinformationLeading-edge 3D NANDMemory Comparison 2018 2019 www.yole.fr MRAM Technology and Business Sample24

MRAM TECHNOLOGY AND BUSINESS 2019Market & Technology Report - August 2019MRAM promises life beyond eFlash: the embedded MRAM market is taking off and is expected toreach 1.2B by 2024.Nowadays, there is broad consensus inthe computer memory industry that the28nm/22nm silicon lithography nodes will bethe last technology nodes for embedded Flash(eFlash). This is not because of fundamentalscalability limitations, but because of economicbarriers. Therefore a new embedded nonvolatile memory (NVM) for code/data storageis needed. At the same time, scaling of volatilestatic random access memory (SRAM) is slowingdown due to cell footprint degradation occurringat advanced nodes. A denser working embeddedmemory would therefore be highly desirable.Among various emerging NVM technologies,spin transfer torque magnetoresistive RAM(STT-MRAM) is gaining significant momentum. Itis poised to become the next embedded memorysolution for a variety of integrated circuit (IC)products manufactured at the 28nm node andbelow. That includes low-power wearables andInternet-of-Things (IoT) devices, microcontrollerunits (MCUs), automotive, imaging and displayICs, edge artificial intelligence (AI) accelerators,and other application specific ICs (ASICs) andapplication specific standard parts (ASSPs).In 2018, the embedded STT-MRAM market wasstill limited, with no volume shipments. 2019 isexpected to be the year this market takes off.Samsung has recently started mass productionof embedded STT-MRAM, and we expect othermajor foundry/integrated device manufacturers(IDMs) to enter the race soon. At the sametime, multiple equipment suppliers like AppliedMaterials, Tokyo Electron Limited (TEL), Canon,and Lam Research, and logic companies likeQualcomm, ARM and Synopsis are increasingtheir research spending on MRAM. This is furtherpropelling the development of the embeddedSTT-MRAM business. Thanks to the supportof a large number of leading companies, YoleDéveloppement analysts believe the embeddedmemory market has the potential to reach 1.2Bby 2024, growing with a compound annual growthrate over this period (CAGR2018-2024) of 295%.On the other hand, the stand-alone memorymarket is expected to grow less vigorously, witha CAGR 2018-2024 of 54%, and will remain below 600M in 2024. So far, the growth has beendriven by low-density (STT-)MRAM devicesat 16Mb and below manufactured by a few keyplayers, such as Everspin and Avalanche/Sony.In coming years, the stand-alone market will bemainly driven by enterprise storage applications.These include solid state drive (SSD) caching andstorage/network accelerators, which are servedby high-density STT-MRAM chips at 256Mband above. The latter are typically sold to IDMsand system makers in the enterprise storagebusiness. These companies require 12-18months to develop new systems, so the ramp-upof STT-MRAM sales has taken a relatively longtime. Notably, 1Gb 28nm devices from Everspinhave recently moved into the pilot-productionphase at GlobalFoundries. Their forthcomingavailability in the market could trigger furthergrowth of enterprise storage applications.Embedded memory technology trends & MRAM market evolutionTechnology-node scaling roadmap for embedded memoriesExpected MRAM market evolution20code/data storageworking memory10LL cachingMRAM market in le Développement, August 2019)20212022eMRAM20232024eMRAM applications02018 2021 2024Stand-Alone Market (in B)Embedded Market (in B)Total Wafer ProductionThousand wafers Overview of the spectrum of(STT-)MRAM technologies, alongwith their manufacturing processesand related technical/economicchallenges Description of three stand-aloneand three embedded (STT-)MRAMapplications Stand-alone:- industrial, transportation,defense and other applicationsrequiring low-density memorychips- enterprise storage, includingaccelerators and SSD caching- persistent memory such asNVDIMM Embedded:- code/data storage memory, asan eFlash replacement- working memory, or “slow”SRAM, for ASSPs/ASICs such asAI edge accelerators- last-level cache memory, aseDRAM/SRAM replacements,in CPUs and mobile processors 2018-2024 market forecast forstand-alone and embeddedapplications in US, Gb andequivalents of 12’’ wafer starts Overview of the latest R&Ddevelopments and next-generationmagnetic memories such as SOTMRAM and VC-MRAM Overview of potential applicationsin the long term, including L1-L2caching based on SOT-MRAM,execute-in-place (XIP) memory suchas high-density NOR replacementsat 2Gb and above, and storage classmemory via STT-MRAM crosspointarchitectures Mapping of the embedded andstand-alone MRAM supply chainwith key partnerships Analysis of the ecosystem’s maturity,challenges and strengths anddescription of the players’ activitiesat different levels of the supply chain Presentation of the latest MRAMdevelopments within the growingChinese memory businessEMBEDDED MRAM IS PICKING UP STEAM THANKS TO THE STRONGINVOLVEMENT OF TOP FOUNDRY/IDM PLAYERS AND EQUIPMENT SUPPLIERSTechnology node (nm)KEY FEATURES

MRAM TECHNOLOGY AND BUSINESS 2019EQUIPMENT SUPPLIERS ARE TACKLING THE CHALLENGES OF HIGH-VOLUMEMANUFACTURING OF STT-MRAMSTT-MRAM combines the best attributes ofconventional memory types in a single technology.It features the speed of SRAM and the nonvolatility of eFlash with unlimited endurance. It canbe added to process flows for logic chips withoutsignificant cost increase, offering a remarkabledensity gain over SRAM, together with low powerconsumption. However, a number of difficulttechnical challenges need to be tackled to fullyexploit the potential of STT-MRAM and enable itshigh-volume production. Fortunately, equipmentsuppliers are working hard to solve such issuesand are offering new solutions enabling continuousprogress.Critical (STT-)MRAM manufacturing challenges and key equipmentplayers*’ involvement towards high volume productionDeposition of MTJ stackGoal: real-time propertymonitoringThe magnetic tunneling junction (MTJ) – thefundamental element of the MRAM memory cell –consists of a delicate multi-layer stack comprising20-to-30 different layers, whose thickness mustbe controlled with sub-nanometer precision. Forreliable MTJ production, deposition systems capableof on-board monitoring of key material propertiesare needed, such as the Endura Clover MRAMphysical vapor deposition (PVD) tool recentlyannounced by Applied Materials. Furthermore, theetch steps for patterning MRAM cells are amongthe most challenging in the manufacturing process.The CoFe and CoFeB layers used in the MTJ cannotbe etched with conventional reactive ion etch (RIE)tools because such materials are not prone to formvolatile compounds with plasma gases. RIE couldalso damage the stack. Hence, the industry has toimplement suitable ion-beam etching techniquesand optimize them to avoid the re-deposition ofbyproducts. For instance, Lam Research and TELhave developed chemically-enhanced ion beametching tools.Last but not least, metrology and testing are alsocritical steps and cannot be overlooked. They haveto be performed multiple times during the devicefabrication process to assess the material/deviceresponse to electrical and magnetic stimuli. Also inthis framework, there are companies developing adhoc solutions for fast measurements on wafers, aswell as packaged devices.Etching MTJ pillarsGoal: high-density, narrowpitch patterningTesting and MetrologyGoal: high-speed measurement ofelectrical and magnetics properties*Non-exhaustive list of companies(Yole Développement, August 2019)EVERSPIN IS THE CLEAR LEADER IN THE STAND-ALONE MARKET. THECOMPETITION IS GETTING FIERCER IN THE EMBEDDED MRAM BUSINESSEverspin is the clear leader of the stand-alone (STT-)MRAM market. It is the only supplier of toggleMRAM at 16Mb and below for applications requiringhigh reliability, such as industrial, transportation,defence and medical markets, which have for longbeen served by non-volatile SRAM (NVSRAM). Itis also the only player supplying high-density STTKey partnerships* within the embedded MRAM ecosystemsT( o beannouncedFoundry MOS D-SOI28nmplanarCMOS ��SRAMeFlash“Slow”SRAMeFlash“Slow”SRAM(in *Non-exhaustive list of companies(Yole Développement, August 2019)MRAM for the enterprise storage market. Avalanchehas started shipping stand-alone STT-MRAM partsfrom 1-32Mb, manufactured at Sony using 40nmlithographic processes. It is targeting the NVSRAMmarket, partially challenging Everspin’s ToggleMRAM.In the embedded business, foundry/IDM activitiesare advancing at a fast pace. Samsung is now inmass production on 28nm Fully Depleted SiliconOn Insulator (FDSOI). Intel, after working silentlyon MRAM for several years, recently confirmedthat its embedded MRAM, which uses a 22nmFinFET architecture, is ready for production. Atthe same time, TSMC is sampling on 22nm planarbulk silicon. Also, Gyrfalcon’s MRAM-based AIchips, manufactured at TSMC, should enter volumeproduction by mid-2020. GlobalFoundries will enterthe market with embedded MRAM for replacingeFlash on 22nm FDSOI, and is working on an SRAMlike version for the subsequent 12nm FDSOI node.Seemingly, Intel is targeting eFlash replacement.Samsung and TSMC seem to be focusing primarilyon embedded MRAM for replacing SRAM inapplications where performance is not a priority.They are expected to enter the market with a “slowSRAM” implementation.

MARKET & TECHNOLOGY REPORTThe overall MRAM ecosystem appears welldeveloped and multiple companies, like NXPand Sony, are ready to adopt embedded MRAMin their IC products. We expect that 2019 willbe the year of the MRAM market take off.The new “MRAM Technology and Business”report by Yole Développement providesan overview of embedded and stand-alonememory technologies. It details the marketevolution for each application, the competitivelandscape, the players’ dynamics, the challengesand the strategies in moving towards massadoption of (STT-)MRAM.REPORT OBJECTIVES Present an overview of the semiconductor memory industry with market insights and trends fordifferent stand-alone and embedded technologies. Analyze embedded and stand-alone MRAM applications including: total addressable markets,roadmaps, market drivers, challenges and players’ objectives. Describe established and newly emerging magnetic memory technologies including: working principles,manufacturing methods, advantages and limitations, average selling price and time-to-market. Outline the latest activities for each key market player, as well as the current product development status. Provide roadmaps with technological nodes, chip density and price evolution. Analyze the MRAM ecosystems and its competitive landscape: Mapping of the entire supply chain Recent acquisitions, partnerships and funding Latest company newsCOMPANIES MONITORED IN THE PRODUCTA*STAR, Advantest, Aeroflex, Antaios, Applied Materials, Avalanche, Canon, Capres-KLA,CEA Leti, CNE, Crocus, CXMT, Cypress, Despatch, Dow, Evaderis, Evatec, Everspin, JHICC,GlobalFoundries, H-Grace, HFC Semiconductor, Hikstor, Hitachi, Honeywell, HP, Hprobe,Huawei, IBM, Imec, Infineon, Intermolecular, Inston, Intel, ITRI, Lam Research, Macronix,Maxim, Materion, Mediatek, Merk, Microchip, Micron, MicroSense Mythic, Nantero, Nanya,National Tsing Hua University, Nokia, Numen, NVE Corporation, NXP, OHT, Panasonic,Qualcomm, Quantum, Reliance, Renesas, Samsung, SanDisk, Seagate, SK Hynix, Shanghai Ciyu,SilTerra, Singulus, Smart Modular Technologies, SmartTip, SMIC, Sony, Spin Memory, Spintec,STMicroelectronics, Stanford University, Synopsis, Syntiant, TDK, TEL, TEL Magnetic Solutions,Teledyne e2v, Tezzaron, Tohoku University, Toshiba, Towerjazz, Tsinghua Unigroup , TSMC,UMC, Veeco, Western Digital, Winbond, XFab, XMC, YMTC, and more.AUTHORSSimone Bertolazzi, PhD is a Technology& Market analyst at Yole Développement(Yole) working with the Semiconductor &Software division. He is member of the Yole’smemory team and he contributes on a dayto-day basis to the analysis of nonvolatilememory technologies, their related materialsand fabrication processes. Previously, Simonecarried out experimental research in the fieldof nanoscience and nanotechnology, focusingon emerging semiconducting materials andtheir opto-electronic device applications. He(co-) authored more than 15 papers in highimpact scientific journals and was awardedthe prestigious Marie Curie Intra-EuropeanFellowship. Simone obtained a PhD inphysics in 2015 from École PolytechniqueFédérale de Lausanne (Switzerland), wherehe developed novel flash memory cells basedon heterostructures of two-dimensionalmaterials and high-k dielectrics. Simoneearned a double M. A. Sc. degree fromPolytechnique de Montréal (Canada) andPolitecnico di Milano (Italy), graduating cumlaude.TABLE OF CONTENTS (complete content on i-Micronews.com)Introduction7Noteworthy MRAM news 2017-201919Context - Overview of the memory business 65 Stand-alone memory – NAND, DRAM, NOR,(NV)SRAM Embedded memory – eFlash, eDRAM, SRAM E merging non-volatile memories – MRAM, PCM,RRAM, etc.Overview of MRAM applications and markettrends107Market forecast and financial analysis114Stand-alone MRAM applications and markettrends124 Industrial, transportation and other (NVSRAM) E nterprise storage – SSD caching and storageaccelerators Persistent memory (NVDIMM)Embedded MRAM applications and markettrends148 E mbedded storage (eFlash) – Code/data storagein MCUs and other ASICS/ASSP chips E mbedded memory (slow SRAM) – Low-powermemory for ASICS/ASSP chips E mbedded cache memory (SRAM, eDRAM) –Fast memory for high-level caching in CPU andmobile processorsLong-term potential applications180MRAM supply chain and player dynamics184 Supply chain analysis MRAM players and activities Mergers and acquisitions, partnerships and fundingChina MRAM development223Technology description and trends231 MRAM technologies MRAM manufacturing Next-generation magnetic memories (SOT- andVC-MRAM)Summary and conclusions264Yole Développement’s presentation271RELATED REPORTSBenefit from our Bundle & Annual Subscription offers and access our analyses at the best availableprice and with great advantages Status of the Memory Industry 2019 Memory Packaging Market and TechnologyTrends 2017 NAND and DRAM Memory ResearchService – Monitor Leading-edge 3D NAND MemoryComparison 2018 - Reverse Costing –Structure, Process & Cost Report by SystemPlus ConsultingFind all our reports on www.i-micronews.comEmilie Jolivet is Director of theSemiconductor & Software Division at YoleDéveloppement, part of Yole Group ofCompanies, where her specific interestscover package & assembly, semiconductormanufacturing, memory and software &computing fields. Based on her valuableexperience in the semiconductor industry,Emilie manages the expansion of the technicaland market expertise of the Semiconductorand Software Team. The team interactsdaily with leading companies allowingsemiconductor & software analysts tocollect a large amount of data and integratetheir understanding of the evolution of themarket with technology breakthroughs. Inaddition, Emilie’s mission focusses on themanagement of business relationships withsemiconductor leaders and the developmentof market research and strategy consulti

2019 www.yole.fr MRAM Technology and Business Sample 6 After recognizing the growing importance of MRAM -particularly within the embedded space -Yole decided to publish the new report "MRAM Technology and Business",which provides a detailed overview of the latest MRAM technology developments together with a high-resolution snapshot of the current state of the MRAM ecosystem