Group IV Nano Optoelectronics: Si Nano Optoelectronics
Si NanoOptoelectronics:GroupIV NanoOptoelectronics:Recent Developments based on Bottom-Up ApproachesThe 6th US-Korea Forums on Nanotechnology:Nanoelectronics and its Integration with ApplicationsApril 29. 2009Moon-Ho JoDept. of Materials Science and EngineeringPohang University of Science and Technology (POSTECH)US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
2H2(Vapor)SiH4GeH4SiGe(Solid)(Liquid)Bottom-Up Nanowires for Integrated Nanosystems?US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Nanowire Photonics/Optoelectronics/Photovoltaics1. Unique size effects at the individual NW levelUS-Korea Nano-Forum 20092. Large-area integrated NW arraysPOSTECH, Nano Device Materials and Physics Lab
Nano Device Materials & Physics nicsNature Phys., Accepted (2009)Nano Lett., Accepted (2009)Appl. Phys. Lett., In Press (2009)Appl. Phys. Lett., 92 263111 (2008)Nano Lett. 6 2679 (2006)1.55μm1.35μm[Near Infrared][Visible][Ultraviolet]SiO2/SiNanowire GrowthSubmitted, (2009)Nano Lett. 8 431 (2008)Adv. Mater. 20 4684 (2008)Chem. Mater 20 6577 (2008)Appl. Phys. Lett., 91, 223107 (2007)Adv. Mater., 19, 3637 (2007)Appl. Phys. Lett. 88, 193105 (2006)Nano Lett. 4 1547 (2004)0.209nm20 nm2 nmNanowire ElectronicsNano Lett. 8 4523 (2008)Appl. Phys. Lett., 91, 033104 (2007)Nano Lett, 6 2014 (2006)US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Nano Si PhotonicsSi Quantum Dot PhotonicsPhotoluminescence in NIR to UV from Si quantum dots (QD) of various size*T.Y. Kim et al., Appl. Phys. Lett. 85, 5355 (2004)Lorenzo Pavesi and David J. Lockwood, Materials Today, Jan. 26, 2005 Exciton-Bohr radius of Si is 5nm. ( 18nm for Ge) Because of (possible) quantum confinements, Si QDs smaller than 5nm, can emit light from the near infrared throughoutthe visible with quantum efficiencies in excess of 10%. Radiative transition rates increase due to the confinement of e-h pairs.US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Nano Silicon PhotovoltaicsMultiple Exciton Generation in Si Quantum DotsM.C. Beard, Nano. Lett. 7, 2506 (2007) Multiple bound e-h pairs (excitons) can be generated in Si nanocrystals (9.5 nm) upon photon absorption of energy greaterthan twice the band gap. The exciton production quantum was found to be 2.6 excitons per absorbed photon at 3.4Eg.US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Si:Ge Nanowire OptoelectronicsSi:Ge Nanowire OptoelectronicsSi:Ge Nano Crystals: The model system for continuously varying lattices and energy band-gaps at the nanometer scale1. Nanowires: Electrically driven Efficient Light-Emitting/Detecting Devices2. Si:Ge Alloys: Tunable Energy upon Light-Matter InteractionUS-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Growth of Single-Crystalline Si1-xGex NanowiresVapor-Liquid-Solid (VLS) Nanowire GrowthConventional VLS-CVD Nanowire Growth Catalyst-assisted CVD of group IV semiconductor nanowires:5nm GeH- Sources: SiH4 and4- Dopants: PH3 and B2H62μmChang-Beom Jin et al., Appl. Phys. Lett. 88, 193105 (2006)Jee-Eun Yang, et al., Nano Lett. 6, 2679 (2006)(Vapor)2H2SiH4, GeH4Si(Solid)(Liquid)US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Band-Gap Modulation in Si1-xGex NanowiresSi1-xGex Nanowire Crystals: Optical Band-Edge AbsorptionJee-Eun Yang et al., Nano Lett. 6, 2679 (2006) The optical band-edge of 0.68eV and 1.05eV for Ge and Si nanowires, and these values agree with the energy band-gapsof bulk Ge and Si crystals of 0.65eV and 1.12eV. The optical band-edge in various Si1-xGex nanowires systematically shifts from that of Si nanowires to that of Ge nanowireswith increasing Ge content. We observed strong blue-shift of optical band-edge for thinner nanowires whose diameter is smaller than 10nm. (ExcitonBohr radius of 4.7nm for Si and 17.7nm for Ge)US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Nano Optoelectronics LaboratorySpatially Resolved Optoelectronic Measurements532 nm LaserDiffraction limit : Δ R k λN .A. 360 nm, 650 nmk : technical constant ( 0.61)N. A. : numerical aperture (0.5, 0.9) A new experimental setup based on a scanned laser confocal microscope allows combinedmeasurements of “spatially resolved” electroluminescence and photoconductivity. The setup also allows the “spectral measurements” of electroluminescence and correlated photoncounting. With the addition of an ultrafast laser, it should also allow “time-resolved measurements”.US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Intra-Nanowire p-n diodePhotocurrent in Si Nanowire p-n diodeD100SVsd 5.0 VVbn0Vsd 2.5 VpVsd 0.0 V2umhνeDrainVsd -2.5 VSourceVsd -5.0 Vh-300nAnpCheol-Joo Kim et al., Nano Lett., Accepted (2009)US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Raman Scattering in Si1-xGex SemiconductorsConfocal Raman Spectro-MicroscopyJee-Eun Yang et al., Appl. Phys. Lett., 92, 263111 (2008)(with Prof. Zee Hwan Kim, Korea Univ. )US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Ge Nanowire PhotodetectorCheol-Joo Kim et al., Nano Lett., Accepted (2009)Ge NWSi NW-710ΔG (S)Laser532 nmPhotodiode0.73-810-9100.320.87-1010Objective Lens (N.A. 0.5)2103104105106102Intensity (W/cm )Ge NWSi NWSi NW or Ge NWAVgVsdXPC Gain-5Y10-610XY piezo-scanner-7102103104105610102Intensity (W/cm )- The PC for Ge NWs is more than two orders of magnitude higher than that of Si NWs. This PC enhancement in Ge NWsis even more pronounced at lower light intensity.- Ge NW can be an excellent candidate for polarization-sensitive nanoscale photodetectors especially in the visible range.- Ge NWs show extremely sensitive photoresponse especially at a low intensity regime, which is attributed to the internalgain mechanism, originating from the surface state filling.US-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Epitaxial NW Growth for Ordered ArraysCheol-Joo Kim et al., Appl. Phys. Lett., In Press (2009)Kibum Kang et al., Adv. Mater. 20 4684 (2008)Vertical Growth by Epitaxy on (111) Si Substrates10 μm(a)(b)(c)Substrate20 μmUS-Korea Nano-Forum 200950 nmNanowire2 nmPOSTECH, Nano Device Materials and Physics Lab
Epitaxial NW Growth for Ordered Arrays(I) PS Nanosphere LithographySubstrate: SiO2(100 nm)/Si(111)-pReactive ion etchingGrowth of Si NWsMetal deposition& PS lift-offSiO2 Dry & Wet etchingAu deposition& Lift-offSi(111)PSUS-Korea Nano-Forum 2009SiO2MetalAuPOSTECH, Nano Device Materials and Physics Lab
Templated-Assisted NW Growth for Ordered ArraysSi Nanowire Arrays from Au-Catalyst Patterns by Nanosphere LithographyUS-Korea Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
Si NW Li-Battery at POSTECH(1) Si nanowire vs. NiSi nanowire World-record Capacity and Efficiency (charging/discharging) up to 4,000 and 99 %! Capacity fading is still small and is maintained up to 80 % after 50 cycles !e-DischargeAnodeChargeLOADSi NW AnodeLi a Nano-Forum 2009POSTECH, Nano Device Materials and Physics Lab
NANO DEVICE MATERIALS & Physics LABJee-Eun YangUS-Korea Nano-Forum 2009Hyun-Seung LeeCheol-Joo KimKibum KangPOSTECH, Nano Device Materials and Physics Lab
US-Korea Nano-Forum 2009 POSTECH, Nano Device Materials and Physics Lab 20 nm 0.209nm 2 nm SiO 2/Si 1.55μm1.35μm [Near Infrar
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nano-silver / nano-copper paste vertical interconnects Master's Thesis Maryam Ahmadi Namin. nano-silver / nano-copper paste . Committee Member: Dr. ing. H.W.(Henk) van Zeijl , Faculty EEMCS, TUDelft. Acknowledgements Maryam Ahmadi Namin Delft, the Netherlands June 9, 2017 iii.
Experimental Study of Nano Electro Machining. (Under the direction Dr. Paul Cohen.) Scanning Probe Lithography (SPL) is one of the methods used for synthesizing nano-structured materials and devices. SPL potentially 3D, relatively fast and needs no expensive masks. Nano milling and nano electro machining are recent developments in SPL. Nano
Commercial Electronics display lighting Optical interconnects CCD image sensor. 21 332:591 Optoelectronics I (W. Jiang) Other Applications of Optoelectronics Commercial Electronics – Before 2000, Optoelectronic technology was
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American Revolution Wax Museum Project Overview You will become an expert on one historical figure who played a significant role in the American Revolution. For this individual, you complete the following tasks: 1. Notes: Use at least 3 sources to research and take notes about the individualʼs life, views, and impact. At least one of
