Recent Total Ionizing Dose Results And Displacement Damage . - NASA
Submitted for publication in IEEE NSREC Data Workshop 2005nsrec05 W23Recent Total Ionizing Dose Results andDisplacement Damage Results for CandidateSpacecraft Electronics for NASAJames W. Howard, Jr., and Rebecca C. DiBariDonna J. Cochran, Scott D. Kniffin,Raymond L. Ladbury, Martha V. O'Bryan,Christian F. Poivey, Hak Kim, Tim. L. IrwinAnthony M. Phan, Martin A. Carts, andJames D. ForneyJackson & Tull Chartered EngineersWashington, DC USAJim.howard@gsfc.nasa.govStephen P. BuchnerMuñiz Engineering Inc.NASA/GSFC Code 561.4Greenbelt, MD USADonna.cochran@gsfc.nasa.govQSS Group Inc.NASA/GSFC Code 561.4Greenbelt, MD USAStephen.buchner@gsfc.nasa.govKenneth A. LaBel, Robert A. Reed,Anthony B. Sanders, Donald K. Hawkins,Stephen R. CoxOrbital Sciences CorporationMcLean, VA USAScott.D.Kniffin.1@gsfc.nasa.govFlight Data Systems and Radiation Effects BranchNASA/GSFC Code 561.4Greenbelt, MD USAKenneth.A.Label@nasa.govAbstract-- We present data on the vulnerability of a variety ofcandidate spacecraft electronics to total ionizing dose anddisplacement damage. Devices tested include optoelectronics,digital, analog, linear bipolar devices, hybrid devices, Analog-toDigital Converters (ADCs), and Digital-to-Analog Converters(DACs), among others.I. INTRODUCTIONIn order to meet the demands of reduced cost, higherperformance and more rapid delivery schedules imposedby the space flight community, commercial and emergingtechnology devices have assumed a prominent role in meetingthese needs. With the skyrocketing increase in the use of suchdevices, the importance of ground based testing for the effectsof total ionizing dose (TID) and proton displacement damageto qualify such devices for flight is paramount. The novelways in which some of these devices are used also highlightsthe need for application specific testing to ensure their properoperation and ability to meet mission goals. The test results presented here were gathered to establishthe sensitivity of the devices selected as candidate spacecraftelectronics to TID and proton damage. Proton-induceddegradation is a mix of ionizing (TID) and non-ionizingdamage. This non-ionizing damage is commonly referred toThe Authors would like to acknowledge the sponsors of this effort: NASAElectronic Parts and Packaging Program (NEPP), and NASA Flight Projects.Christopher D. Paloras displacement damage (DD). This testing serves todetermine the limit to which a candidate device may be usedin space applications. For single event effects (SEE) results,see a companion paper submitted to the 2005 IEEE NSRECRadiation Effects Data Workshop entitled: “Recent SingleEvent Effects Results for Candidate Spacecraft Electronics forNASA" by M. O'Bryan, et al. [1]II. TEST TECHNIQUES AND SETUPA. Test Facilities - TIDTID testing was performed using a Co-60 source at theGoddard Space Flight Center Radiation Effects Facility(GSFC REF). The source is capable of delivering a dose rateof up to 0.5rads(Si)/s, with dosimetry being performed by anion chamber probe.B. Test Facilities – ProtonProton DD/TID tests were performed at the University ofCalifornia at Davis Crocker Nuclear Laboratory (UCD-CNL)that has a 76" cyclotron (maximum energy of 63 MeV. TableI lists the proton damage test facility and energies used on thedevices.Table I: Proton Test FacilitiesFacilityUniversity of California at DavisCrocker Nuclear Laboratory (UCD-CNL)Proton Energy,(MeV)26.6-63
C. Test MethodsUnless otherwise noted, all tests were performed at roomtemperature and with nominal power supply voltages.1) TID TestingTID testing was performed to the MIL-STD-883 1019.6test method [2].2) Proton Damage TestingProton damage tests were performed on biased deviceswith functionality and parametrics being measured eithercontinually during irradiation (in-situ) or after stepirradiations (for example: every 10krads(Si), or every 1x1010protons).III. TEST RESULTS OVERVIEWAbbreviations for principal investigators (PIs) are listed inTable II. Definitions for the categories are listed in Table III.Abbreviations and conventions are listed in Table IV. Thispaper is a summary of results. Please note that these testresults can depend on operational conditions. Complete testreports are available online at http://radhome.gsfc.nasa.gov[3].TABLE II: LIST OF PRINCIPAL INVESTIGATORSAbbreviationSBBDSK12345REVPrincipal Investigator (PI)Steve BuchnerBecky DiBariScott KniffinTABLE III: LIST OF CATEGORIESNot tested to failure.Degradation at 50krads(Si)Degradation at 20-50krads(Si)Degradation at 5-20krads(Si)Degradation at 5krads(Si) or lessResearch Test Vehicle – Pleasecontact the P.I. before utilizing thisdevice for spacecraft applications.TABLE IV: ABBREVIATIONS AND CONVENTIONS:ACRONYMADCASICCCDCMOSDACDDDNLFETGSFC REFIbICIfIOSISTDBYDEFINITIONanalog to digital converterapplication specificintegrated circuitcharge coupled devicecomplementary metal oxidesemiconductordigital to analog converterdisplacement damagedifferential non-linearityfield effect transisterGoddard Space Flight CenterRadiation Effects Facilitybias currentcollector currentforward currentoffset currentstandby currentACRONYMLDCLEDICCMeVN/Aop ampp/cm 2PIPTTIDUCD-CNLVOLVoutVceDEFINITIONlot date codelight emitting diodepower supply currentmega electron voltnot applicableoperational amplifierprotons/cm 2Principal Investigatorphoto transistortotal ionizing doseUniversity of California atDavis Crocker NuclearLaboratoryoutput saturation voltageoutput voltagecollector emitter voltage
TABLE V: SUMMARY OF TID AND DD TEST RESULTSPart NumberFunctionFacility Date/P.IDose rate(Co-60 source unless (rads(Si)/s)otherwise noted).Summary of AX529Maxim0101, 01268-Bit DACGSFC04MAY/SK0.51All parts passed all tests up to 5.0krads(Si).AD574Analog Devices9245, 9248,944212-Bit ADCGSFC04SEP/SK0.1730AD7545Analog Devices0503A12-Bit ADCGSFC05JAN/BD0.15All parts passed all tests up to 20krads(Si). After30krads(Si) and higher, all devices exceed thespecification limit for INL (greater than 1lsb).Functional failure at 5krad (Si), no recovery observedafter annealing.AD7846SQAnalog DevicesQ0408A16-Bit DACGSFC05FEB/BD0.42DNL exceeds specification limit at 10krads(Si).Functional failure at 15krads(Si), recovered after 168hour annealing., parametric degradation continues.Devices were taken to 20krads(Si) and no functionalfailure was observed. After 25krads(Si), functionalfailures were again observed.10Test ReportCat.Data Converters 55G04May MAX529 TID.pdfG04SEP AD574 TID.pdfG05JAN AD7545 TID.pdf1354G05FEB AD7846 TID.pdfOperational AmplifiersOP27Analog Devices0402FOp AmpGSFCFEB05/BD0.6All parts passed all tests up to 20krads(Si). 20OP27AAnalog Devices9347, 9407Op AmpGSFC04SEP/SK0.1750OP200Analog Devices2C0347GOp AmpGSFC05JAN/BD1.13All parts passed all tests up to 30krads(Si). Degradationwas seen in Ib and –Ib from 50 to 100krads(Si). Afterannealing two of the devices return to withinspecification limits.All parts passed all tests up to 5krads(Si). Ios exceedsspecification limits after 10krads(Si). After annealing,all devices returned to within specification limits.OP42AZAnalog Devices2C0345GOp AmpGSFC05JAN/BD1.07OP400Analog Devices2B0404FOp AmpGSFC05JAN/BDOP77Analog Devices3B0402FOp AmpAD744Analog Devices0000GBiFET Op AmpG05FEB OP27TID.pdfG04SEP OP27A TID.pdf1310G05JAN OP200 TID.pef4 Ib exceeded specification limits at 10krad(Si).10G05JAN OP42TID.pdf41.13All devices pass all tests after 1 krad(Si). Ib exceededspecification limits after 5krads(Si).5G05JAN OP400 TID.pdf5GSFC05MAR/BD1.13 Ib exceeded specification limits after 10krads(Si).10G05MAR OP77 TID.pdf4GSFC05FEB/BD0.71All parts passed all tests up to 5krads(Si). After10krads(Si), all devices exceeded the specification limitfor Ib. After annealing, all devices remain above thespecification limit.10G05FEB AD744 TID.pdf4
TABLE V: SUMMARY OF TID AND DD TEST RESULTS (CONT.)Part NumberManufacturerLDCFunctionFacility Date/P.IDose rate(Co-60 source unless (rads(Si)/s)otherwise noted).Summary of ResultsDegradationLevel(krads(Si))Test ReportCat.DC/DC Converters and Related DevicesAFL2803R3SAdvanced Analog(IR)03513.3V, DC/DCConverterGSFC04JUN/SK0.028All parts passed all tests up to 10krads(Si). 10G04JUN AFL2803R3S TID.pdf1MAX724ECKMaxim0342DC/DC RegulatorGSFC04NOV/SK0.23All parts passed all tests up to 20krads(Si). 20G04NOV MAX724ECK TID.pdf1GSFC04NOV/SK0.23Some VOL measurements exceeded specification limitsafter 10krads(Si), however these parameters were withinspecification after this step. All 8 ICC measurementsexceeded specification limits after 15krads(Si) and20krads(Si). Significant changes occurred followingannealing, see report.10Logic 0433HN58C1001T1516-Bit TransceiverEEPROM4G04NOV 54ACTQ16245 TID.pdf 100G05JAN HN58C1001T15 TID.pdf1VOUT(10V) exceeded specification limits after15krads(Si). No recovery was noted after annealing.15G05JAN AD584 TID.pdf40.04All parts passed all tests up to 10krads(Si). 10G04MAY AD822 TID.pdf11.3Parametric degradation at 90krads(Si). Functionalfailure at 270krads(Si). 90G04AUG LXA0387.pdfGSFC05JAN/SB0.8All parts passed all tests up to 100krads(Si).GSFC05JAN/BD0.7Low Power FETGSFC04MAY/SKOther Linear Devices0348B, 0413D Voltage ReferenceAD584Analog DevicesAD822Analog Devices0029BLXA0387LSI Logic0414ASIC/512k SRAMGSFC04AUG/CPCustom C-2 LED(InGaN blue)Micropac (AXTOpto)N/ALEDCNL 04NOV/SK1x1010 p/cm2 No degradation was seen up to 3x1011 p/cm2. A smallto 1x1012 decrease in Ic was seen after 5x1011 p/cm2 and 1x1012p/cm2p/cm2.5x1011 p/cm2Custom TCM405(GaN UV)Micropac (III-VComponents)N/ALEDCNL04NOV/SK 1x1012 p/cm262087-301 (LED),61055-305 (PT)MicropacN/ALED/PT Encoder CNL04JAN/SK1x1010 p/cm2 No degradation was seen up to 1x1012 p/cm2.to 1x1012p/cm21021x1010 p/cm2 No degradation was seen up to115x10 2 p/cm . Uniform12degradation occurs from 1x10 p/cm to 1x1012 p/cm2.to 1x102Degradationis dependent on LED forward current. Seep/cmreport.Optical Devices1x1011 p/cm2D04NOV C2LED.pdfD04NOV C2LED.pdfD04JAN 61055 62087.pdf211
IV. TEST RESULTS AND DISCUSSION1) OP27AThe OP27A operational amplifier from Analog Deviceswas tested to 100krads(Si) with an average dose rate of0.17rads(Si)/s. The two LDCs tested were 9347 and 9407.The devices were statically biased. For both Ib and-Ib, three devices exceeded the specification limits after40krads(Si); all devices exceeded specification limits forboth parameters after 50krads(Si) and continued to degradethrough 100krads(Si). There was significant recovery inthese parameters with two devices having readings withinspecification limits following annealing. Both LDCs ofdevices behaved similarly in terms of degradation;however, LDC 9407 did perform slightly better overall.See Figures 1 and 2 for comparisons of lot-to-lot 1bdegradation.Fig. 1. Analog Devices OP27A Ib degradation by LDC.Fig. 2. Analog Devices OP27A –Ib degradation by LDC.2) 54ACTQ16245The 54ACTQ16245 16-bit transceiver from NationalSemiconductor was tested to 20krads(Si) with an averagedose rate of 0.23rads(Si)/s. The eight test devices werestatically biased. Some VOL measurements exceededspecification limits after 10krads(Si) only to return towithin specification limits at higher dose levels andfollowing annealing. Following the 15krads(Si) exposure,all devices go beyond specifications for all 8 ICCmeasurements. Two devices had readings in certain ICCmeasurements that fell below the lower specification limitfor those tests while all devices in all other ICC testsexceeded the upper specification limits. After 20krads(Si),all devices had all 8 ICC measurements exceedingspecification limits.Following 168 hours of roomtemperature annealing, the results become morecomplicated. Five devices exhibited what is interpreted tobe a significant secondary effect in the form of long-termcharge trap collection. The four ICC-high measurements inthese devices went from significantly exceeding thespecification limits for ICC to falling significantly below thespecification limits for these ICC parameters with threespecific exceptions within this subgroup where themeasurements remained only slightly higher thanspecification limits. For these five devices, all of the ICClow measurements continued to exceed the specificationlimits for those parameters. All other devices continued toexceed specification limits for all ICC parameters. Theseresults imply that there is a propensity for the devices tocollect charge traps over time that cause additionaldamage. The fact that this is not noted in all of the samplestested indicates that there is an inconsistent electricalmargin for the devices within this lot.3) Blue LED (470nm)Displacement damage testing was performed on a 470nmblue LED die (InGaN), manufactured by AXTOptoelectronics, custom packaged by Micropac. Fivedevices were exposed to 63MeV protons at UCD-CNL.The devices were unbiased during each irradiation step.The LEDs were tested in a custom wooden jig to eliminatestray light and enable test repeatability.The LED response was measured by sweeping the LEDforward current from 0.1mA to 20mA in log steps andcollecting the light output (IC) with a photo diode thatremained constant and unirradiated during all testing. Thedevices were measured twice after each exposure to checkfor charge injection annealing that can result from testingthe devices. There was typically a 10nA increase incollector current between the first and second test. Thisdoes not significantly change the results in any way andimplies nominal charge injection annealing.The LEDs showed no significant degradation up to3x1011 p/cm2 with a photocurrent drop of 50nA. Slightdegradation is seen after 5x1011 p/cm2 and 1x1012 p/cm2with a 0.103 to 0.168µA drop in photocurrent. It should benoted that so long as IF is greater than 1mA, the devices doperform consistently. Fig. 3 shows typical LED responseto increasing fluence for these devices.
Fig. 3. Micropac (AXT Optoelectronics die) 470nm InGaN blue LEDproton displacement damage as a function of total fluence in p/cm2.4) LED/PT Encoder PairDisplacement damage testing was performed onLED/PT encoder pairs, custom packaged by Micropac. Atotal of four pairs of devices were exposed to 63MeVprotons at UCD CNL. The devices were unbiased duringeach irradiation step. The device pairs were custompackaged in a single unit that had the full area of the LEDexposed, a small air gap, a tall but narrow aperture, and thePT behind the aperture. The aperture was designed tomimic the encoder blade that will pass between the devicesin this mission’s application. This enabled the devices tobe qualified together as a system in a mission-specificflight configuration. The importance of this style of testingwas demonstrated by Kniffin, et.al., at the 2003 RADECSConference [4].The tests performed on the encoder pairs wereconducted as follows. The collector current (IC) of the PTwas swept from 1µA to 20mA in log steps and was done bya parametric analyzer while measuring VCE. This was donewhile the LED forward current (IF) was held constant from0 to 20mA in 1mA steps. Figures 4 through 9 show theprogression of degradation for a given device pair. Eachline of data on the graphs represents each PT IC sweep withthe corresponding LED IF given in the legend.No significant degradation was seen up to 5x1010 p/cm2.Degradation was uniform from this point forward, affectingall devices nearly equally. The devices show degradationin both the amount of IC that can be delivered before shutoff and in the increase in VCE. At the mission required testfluence of 3x1011 p/cm2, there is nearly an order ofmagnitude increase in VCE for any given point where thepair is on. The device pairs also show what was effectivelya failure for LED IF 1mA at 1x1012 p/cm2 total fluence.Fig. 4. Micropac custom encoder pair PT VCE measurements as afunction of PT IC at various LED IF (Pre-Irradiation).Fig. 5. Micropac custom encoder pair PT VCE measurements as afunction of PT IC at various LED IF (5x1010 p/cm2).Fig. 6. Micropac custom encoder pair PT VCE measurements as afunction of PT IC at various LED IF (1x1011 p/cm2).
VI. ACKNOWLEDGMENTThe authors would like to acknowledge the sponsors ofthis effort: a portion of the NASA Electronic Parts andPackaging (NEPP) program, and NASA Flight Projects.VII. REFERENCES[1][2]Fig. 7. Micropac custom encoder pair PT VCE measurements as afunction of PT IC at various LED IF (3x1011 p/cm2).[3][4][5][6][7][8][9][10][11][12]Fig. 8. Micropac custom encoder pair PT VCE measurements as afunction of PT IC at various LED IF (5x1011 p/cm2).[13][14][15][16][17][18][19][20]Fig. 9. Micropac custom encoder pair PT VCE measurements as afunction of PT IC at various LED IF (1x1012 p/cm2).V. SUMMARYWe have presented data from recent TID and protoninduced damage tests on a variety of primarily commercialdevices. It is the authors' recommendation that this data beused with caution. We also highly recommend that lottesting be performed on any suspect or commercial device.[21][22][23][24]M. O'Bryan, et al., Recent Single Event Effects Results forCandidate Spacecraft Electronics for NASA" submitted to the 2004IEEE NSREC Radiation Effects Data Workshop.Department of Defense Test Method Microcircuits, MIL-STD-883Test Method Standard, Microcircuits, MIL-STD-883 Test Method1019.6, Dated: 07 March 2003, File name: ilSpec/Docs/MIL-STD883/std883not5.pdfNASA/GSFC Radiation Effects and Analysis home page,http://radhome.gsfc.nasa.gov[MAX529] S. Kniffin, P. Kang, "Radiation Report on MAX529(LDCs 0101 and 0126)," G04MAY MAX529 TID.pdf[AD574] S. Kniffin, J. Forney, "Radiation Report on AD574 (LDC9245, 9248 and 9442)," G04SEP AD574 TID.pdf[AD7545] B. DiBari, and A. Pham, "Radiation Report onAD7545AUQ/883B (DC: 0503A)," G05JAN AD7545 TID.pdf[AD7846SQ] B. DiBari, C. Palor, and A. Pham, "Radiation Reporton AD7846SQ (DC: Q0408A)," G05JAN AD7846SQ TID.pdf[OP27] B. DiBari, C. Palor, and A. Pham, "Radiation Report onOP27 (LDC 0402F)," G05FEB OP27 TID.pdf[OP27A] S. Kniffin, and C. Palor, "Radiation Report on OP27A(LDC 9347 and 9407)," G04SEP OP27A TID.pdf[OP200] B. DiBari, C. Palor, and A. Pham, "Radiation Report onOP200AZMDA (DC: 2C0347G)," G05MAR OP200 TID.pdf[OP42] B. DiBari, C. Palor, and A. Pham, "Radiation Report onOP42AZ/883 (LDC 2C0345G)," G05MAR OP42 TID.pdf[OP400] B. DiBari, C. Palor, and A. Pham, "Radiation Report onOP400AYMDA (DC: 2B0404F)," G05MAR OP400 TID.pdf[OP77] B. DiBari, C. Palor, and A. Pham, "Radiation Report onOP77AZMDA (DC: 3B0402F)," G05MAR OP77 TID.pdf[AD744] B. DiBari, C. Palor, and A. Pham, "Radiation Report onAD744TH (DC: 0000G)," G05MAR AD744 TID.pdf[AFL2803R3S] S. Kniffin, M. Carts, "Radiation Report onAFL2803R3S(IR)fortheGLASTProject,"G04JUN AFL2803R3S TID.pdf[MAX724ECK] S. Kniffin, C. Palor, and H. Ngin, "RadiationReportonMAX724ECK(LDC0342),"G04NOV MAX724ECK TID.pdf[54ACTQ16245] S. Kniffin, C. Palor, and L. Hua, "RadiationReporton54ACTQ16245(LDC0409),"G04NOV 54ACTQ16245 TID.pdf[HN58C1001T15] Stephen Buchner, "Total Ionizing Dose TestingofHN58C1001T15EEPROM(Renesas),"G05JAN HN58C1001T15 TID.pdf[AD584] B. DiBari, C. Palor, and A. Pham, "Radiation Report onAD584TH/883B(LDC0348B&0413D),"G05JAN AD584 TID.pdf[AD822] S. Kniffin, S. Norris, "Radiation Report on AD822 (LDC0029B)," G04MAY AD822 TID.pdf[Custom C-2 LED (InGaN blue)] S. Kniffin, and H. Kim,"Radiation Report on Blue and Violet calibration LEDs,"D04NOV C2LED.pdf[Custom TCM405 (GaN UV)] [TCM405] S. Kniffin, and H. Kim,"Radiation Report on Blue and Violet calibration LEDs,"D04NOV C2LED.pdf[61055 62087] S. Kniffin, and H. Kim, "Radiation Report onLED/PT encoder pair," D111604 61055 62087.pdf[RADECS02 Kniffin] S.D. Kniffin, R.A. Reed, P.W. Marshall,J.W. Howard, H.S. Kim, and J.P. Schepis. “The Impact of SystemConfiguration on Device Radiation Damage Testing of OpticalComponents”, Proceedings of RADECS 2003, Noordwijk, TheNetherlands. ESA SP-536, September 2003: 17-21.
NASA/GSFC Code 561.4 Greenbelt, MD USA Donna.cochran@gsfc.nasa.gov Kenneth A. LaBel, Robert A. Reed, Anthony B. Sanders, Donald K. Hawkins, Stephen R. Cox Flight Data Systems and Radiation Effects Branch NASA/GSFC Code 561.4 Greenbelt, MD USA Kenneth.A.Label@nasa.gov James W. Howard, Jr., and Rebecca C. DiBari Jackson & Tull Chartered Engineers
Ionizing & Non-Ionizing Radiation Interest in this area of potential human hazard stems, in part, from the magnitude of harm or damage that an individual who is exposed can experience. It is widely known that the risks associated with exposures to ionizing radiation are significantly greater than compa-rable exposures to non-ionizing radiation.
Ionizing radiation: Ionizing radiation is the highenergy radiation that - causes most of the concerns about radiation exposure during military service. Ionizing radiation contains enough energy to remove an electron (ionize) from an atom or molecule and to damage DNA in cells.
Non-ionizing radiation. Low frequency sources of non-ionizing radiation are not known to present health risks. High frequency sources of ionizing radiation (such as the sun and ultraviolet radiation) can cause burns and tissue damage with overexposure. 4. Does image and demonstration B represent the effects of non-ionizing or ionizing radiation?
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The use of the term non-ionizing radiation in this document is defined as meaning non-ionizing radiation produced as a result of normal equipment use and which is at such a level that is recognized as harmful to humans. NOTE: This procedure does not cover non-ionizing radiation generated during welding, cutting, or burning activities. 1.2 POLICY
non-ionizing EMF radiation exposure safety standards are based primarily on stand-alone radiation exposures. When combined with other agents, the adverse effects of non-ionizing EMF radiation on biological systems may be more severe. Much work remains to be done before definitive statements about non-ionizing
you about non-ionizing radiation, such as microwaves, ultrasound, or ultraviolet radiation. Exposure to ionizing radiation can come from many sources. You can learn when and where you may be exposed to sources of ionizing radiation in the exposure section below. One source of exposure is from hazardous waste sites that contain radioactive waste.
Integrated Dose Management Integrated Optimized Workflow to Minimize Dose Scan Planning Real-time dose display Dose displayed on console prior to exam CTDI phantom size . . Automated Increase clinical workflow Dose Reduction Simplified . 7/22/2014 9 Adaptive Iterative Dose Reduction (AIDR) 3D Scanner Model Projection Noise
