IEEIE Standard Letter Symbols - IIT Bombay
392 IEEE Transactions on Electron Devices, vol. ED-11(8), pp. 392-397, Aug. 1964. IEEIE Standard Letter Symbols for Semiconductor CONTENTS 1) Electrical Quantities 1.1 Quantity Symbols 1.2 Subscripts for Quantity Symbols 1.3 TheSubscript SequenceConforms to the Mathematical of Convention for Writing DeterminantsfromaSet Fundamental Kirchhoff's Equations 2) Electrical Parameters 2.1 Parameter Symbols 2.2 Subscript for Parameter Symbols 3) Letter Symbols in Alphabetical Order 1. ELECTRICAL QUANTITIES 1 .I Quantity Symbols 1.1.1 Instantaneous values of current, voltage, and power, that vary with time, are represented by the lowercase letter of the proper symbol. Examples: i, u, p 1.1.2 Maximum (peak), average (direct-current), and root-mean-square values of current, voltage, and power are represented by the upper-case letter of the appropriate symbol. Examples: I, V , P Examples: io,, I,,, IC,, 1.2.4 Symbols t o be used as subscripts. (For example, see Fig. 1 and Basic Symbols Chart 1.2.5.) E, e B, b c, c J, j A, a K, k G, g x M, m Min, min (AV) x, emitter terminal base terminal coIIector terminal terminal, general anode terminal cathode terminal gate terminal circuit node maximum value minimum value average value 1.2.5 A final subscript may be used t o identify the termination of the port other than the one to which the quantity is referred : O Open-circuit termination S Short-circuit termination X General termination R Resistive termination V Bias-Voltage termination. 1-2 Subscripts for Quantity Symbols 1.2.1 Direct-current values andinstantaneoustotal values are indicated by upper-case subscripts. Examples: &, IC, vEB, V E B , PC, PC 1.2.2 Alternating-component values are indicated by lower-case subscripts. Examples: io, I,, Veb, Veh,P , , PC 1.2.3 T o distinguish betweenmaximum (peak), average, and root-mean-squarevalues,maximum values are represented by the addition of a subscript M or m, and average by (AV). Note: Where this distinction is not necessary, the additional subscript may be omitted. Copies of this Standard may be purchased from the Institute of Electrical and ElectronicsEngineers, Box A, Len- Hill Station, New York, N. Y., 10021, at 1.00 per copy t o members, and 3.00 per copy t o nonmembers. PEAK) UUE Fig. I-Illustration of proper symbol usage.
Devices Symbols for Semiconductor 1964 This subscript should be upper case if the-other subscripts are upper case, and lower case if the other subscripts are are lower case. Example: IC,,, I C E s, V(BR)CER 1.2.6 Basic Symbols Chart (Table I) e b C j a k Instantaneous Value ?f Alternatmg Component g C J A K G Instantaneous Total Value In multiple-unit devices, the terminal subscripts are modified by a number preceding the subscript. Example: V 1 B - 2 , 2. ELECTRICAL PARAMETERS - Direct-current Value E B same type, the terminal subscripts are modified by adding a number following the subscript and on the same line. Example: VBI-Bz 1.3.4 When necessary t o distinguish betweencomponents of current or voltage, the symbols may be used as shown in Fig. 1. The illustration shows a case where a small alternating component is developed in the collector circuit of a transistor. Root-Mean-Square Valueof Alternating Component With additional subscriptm, Maximum (peak) Value of Akernating Component 393 With additional subscript M , Maximum (Peak) Total Value With additional subscript (AV) Direct-current Value m t h Alternating Component 1.2.7 Examples of application of basic symbols chart. emitter direct-current (no alternating coxnponent) root-mean-square value of alternating component of emitter current instantaneous value of alternating compoent of emitter current instantaneous total value of emitter current average of emitter current with alternating component maximum (peak) value of the alternating component of emitter current maximum total (peak) value of the emitter current 1.3 The Subscript Sequence Conforms tothe Mathematical Concention for Writing Determinants from a Set of Fundamental Kirchhofs Equations 1.3.1 The first subscript designates the terminal at which the current is measured, orwhere the terminal potential is measured with respect to the reference terminal, or circuit node, designated by the second subscript. (Conventional current flow intothe terminal from the external circuit is positive.) When the reference terminal or circuit node is understood, the second subscript may be omitted where its use is not required to preserve the meaning of the symbol. 1.3.2 Supply voltage may be indicated by repeating the terminal subscript. The reference terminal may then be designated by the third subscript. Examples: V E X , Vcc, VBB, VEEB, VCCB, VBBC,VKE 1.3.3 In devices having more than one terminal-of the 2.1 Parameter Xymbols 2.1.1Value of four-pole matrix parameters, or other resistances, impedances, admittances, etc., inherent in the device, may be represented by the lower-case symbol with the proper subscripts. Examples: h,,,, Z a b , Y Z l b , I I B hz,, , 2.1.2 The four-pole matrix parameters of external circuits and of circuits in which the device forms only a part shall be represented by upper-case symbols with appropriate subscripts. Examples: H,,! Z,,, Yzl, Y,, 2.2 Subscript for Parameter Xymbols 2.2.1 Static’ values of parameters are indicated by the upper-case subscript. Examples: h,,,, zZ1B,yz2c 2.2.2 Small-signal values of parameters are indicated by the lower-case subscript. Examples: h,,,,ZZlb) yZzc 2.2.3 The first subscript or subscript pair, in matrix notation, identifies the element of the four-pole matrix. 11 or i input 22 or o output 21 or f forward transfer 12 or r reverse transfer Examples: V , h1J, 3- h,,V, I2 hzJl 3- h2zVz Vi hiIi - h,V, Io h,Ii hoFo Note 1) Voltage and current symbols in matrix notations are designated with a single-digit subscript 1 input and subscript 2 output. Note 2 ) The quantities and parameters in these equations may be complex. 2.2.4 The subscript following the numeric pair identifies the circuit configuration, When the common terminal is understood, it may be omitted. 1 The static value is the slope of the line from the origin t o the operatingpoint on the appropriatecharacteristiccurve, i.e., the quotient of the appropriate electrical quantities a t t.he operating point.
394 Note: This is the frequency a t which the modulus of hzleis extrapolated t o unitmy. h,lB, h,,,, h,,,, h,,, hFE,hFc-The static value o the e emitter terminal, common b base terminal, common C ” collector terminal, common j general terminal, common a mode terminal, common k cathode terminal, common g gate terminal, common Examples: (common-base transistor) I 1 Yllbvlb I 2 YZlbVlb YlZbvZb ri Yibvib YZZbVZb I, YfbVib short-circuit forward current transfer ratio. Yrbvob YobVob 2.2.5 The subscript “0” or “s” following the subscript identifying circuit configuration for a two-port parameter identifies the termination of the port opposite from the one to which the parameter is referred: o s opposite port open-circuited opposite port short-circuited. Note: Use of the symbols a g g , L Y F C , a F E is not recommended. hz1b, h,,,, h,,,, hfbrhr,, h,,--The small-signal short-circuit forward current transfer ratio. Note: Use of the symbols afb1mfc, CYfe is not recommended. h,lB, h,,,, h,,,,hIB, h,,, h,,-The ,&ort-circuit input resistance. static value of the h I l bh,,,, , h,,,, hib, hi,, hi,-The small-signal the short-circuit input impedance. hzzB,hZzE, h,,,, hoB,ho,, hoc-The open-circuit output conductance. value of static value of the small-signal value of hZzb,h,,,,h,,,, hob,hoe,h,,-The This subscript should be upper case if the other subscripts arc upper case and should be lower case if the the open-circuit output admittance. other subscripts are lower case. him, hym,hl,,,hRB,hRE,hR,-The Static vahe Of the open-circuit reverse voltage t r a d e r ratio. ExampIe: Cllbs, C,,, hlzb, h,,,, h,,,, hrb7 h,,, h,,-The small-signal value of the open-circuit reverse voltage transfer ratio. 3. LETTERSYMBOLS IN ALPHABETICAL ORDER The following list has been compiled according to the conventions set forth in Sections 1 and 2 of this Standard. 111many of the symbols that follow onlythe direct-current versions are listed, e.g., I,,,. Other symbols are easily generated by application of the rules of Sections 1 and 2. CII,,Cllbs) cllGs) ClleslGibs, Ciea,Ci,,-The capacitance measured across the input terminals with the output terminals short-circuited to alternating current. Note: The use of the upper-case symbol is an exception to the rules set forth in Section 2.1.1. Re(hllb), Re(hZlh),Re(h2zb)-Real part of the smallsignal value of the parameter within the parenthesis. 1m(hllb),Im(hzlb), Irn(h,,,)-Imaginary part of the small-signal value of the parameter within the parenthesis. IF , IRo--The current through the collector junction in a PNPN-type switch when the switch is in the forward (reverse) blocking state and the gate terminal, if any, is open-circuited. IAGO, IGAO, IGKO, ICBO, IKGO, ICBO, IEBO, I E c O , IBEO, IBCo-The current into the terminal indicated by the first CZZ,,C2Zbo, C2zoo, C z z e o , Gobo, Coco, Co,,,-The capacitance subscript when it is biased in the reverse direction with measured across the outputterminals with the inputopen- respect to the reference terminal and the other terminal is open-circuited. circuited to alternating current. I F s, lR s-The current through the collector junction in Note: The use of the upper-case symbol is an exception a PNPN-type switch when it is in the forward (reverse) to the ruIes set forth in Section 2.1.1. blocking state and the gate terminal is short-circuited t o f h Z l b ) fhZle, fhalo-The lowest frequency at which the the terminal of the adjacent region. magnitude of the parameter indicated by the subscript I A G S, I G K S G , IKKG 9 rGA SG, ICB S J I C E ST I E B S) I E C S7 I B I S SI is 0.707 of its low-frequency value. I,, s-The current into the terminal indicated by the first Note: The use of the symbol f a is not recommended. subscript when it is biased in the reverse direction with fmaa-The maximum frequency of oscillation of the respect to thereference terminal and the other terminal is device. short-circuited t o the terminal indicated by the subscript following the subscript S. fl-The frequency at which the modulus of the commonemitter small-signal short-circuit forward current transfer Note: When the last subscript is omitted, the other terratio, Ihzl,(,has decreased to unity. minal is short-circuited t o the reference terminal. fT-The product of the modulus of the common-emitter I,,, I,,-The current through the collector junction in small-signal short-circuit forward current transfer ratio, a PNPN-type switch when the switch is in the forward Ihzlel,multiplied by the frequency of measurement when (reverse) blocking state and the gate terminal is returned this latteris sufficiently high so that themodulus of hsl, is to the terminal of the adjacent region through a stated decreasingwith a slope approximately 6 decibels per octave. impedance and/or bias voltage.
Devices Symbols for Semiconductor 1964 Note: When the return is through a resistance, the subscript “X” should bereplaced by the subscript “R.”When the return is through a stated bias voltage, the subscript “X” should be replaced by the subscript “V.” 395 I(BR)AGX, I(BR)GKXG, I(BR)KGx) I(BR)GAXG, I(BR)CBX, ICBR)CEX, I(BR)EBx, I(BR)ECX, I(BR)BEX, ImwBcx-The current into the terminal indicated by the first subscript when it is biased at the breakdown voltage with respect t o the reference terminal and the other terminal is returned t o the terminal indicated by the subscript following the I,,,, I G K X G , IKGX, IGAXG,I c E xICBX, , IEBX, IECX, IBEX, subscript “X” through a stated impedance and/or bias IBCx-The current into the terminal indicated by the first voltage. subscript when it is biased in the reverse direction with respect t o the reference terminal and the other terminal is Note: When the last subscript is omitted, the other terreturned t o the terminal indicated by the subscript followminal is returned t o the reference terminal. When ing the subscript “X” through a stated impedance and/or the return is through a resistance, the subscript bias voltage. “X” shouldbereplaced by the subscript “R.” When the return is through a stated bias voltage, Note: When the last subscript is omitted, the other terthe subscript “X” should be replaced by the subminal is returned to the,referenceterminal. When script “V.” the return is through a resistance, the subscript “X” shouldbereplaced by the subscript “R.” IF-The forward current of a diode or the current When the return is through a statedbias voltage, through the collector junction of a PNPN-type switch the subscript “X” should be replaced by the sub- when the switch is in the ON state. script “V.” Note: If necessary to specify terminal currentsina I(,,,-The currentthrougha diode at breakdown PNPN-type switch when the switch is in the ON voltage. state, the symbols I,,, IxF shall be used. I ( B R ) F I(BR)RO-The O, currentthrough theco ector IGF-The forward gate current in a PNPN-typeswitch. junction in a PNPN-type switch at forward breakover IGQ-The gate turn-off current in a PNPN-type switch. (reverse breakdown) voltage when the gate terminal, if any, is open-circuited. IGR-The reverse gate current in a PNPN-type switch. I(BR)AGO, I ( B R ) GI A ( BoR , )GKo, I(BR)KGo, I(BR)CBO, I(BR)CEO, I(BR)EBo, I(BR)ECO, I(BR)BEO, I(BR)Bco-ThC current into the terminal indicated by the first subscript when it is biased at the breakdown (breakover) voltage with respect t o the reference terminal and the other terminal is open-circuited. IGT-The gate trigger current in a PNPN-type switch. I -The holding current in a PNPN-type switch. Note: If necessary t o state gate conditions, the appropriate additional subscript shall be used. IR-ReVerSe current of a diode. current through the collector junction in a PNPN type switch at forward breakover M-The multiplication factor which is equal to theratio (reverse breakdown) voltage when the gate terminal is of the total current through a reverse biased junction to short-circuited t o the terminal of the adjacent region. the minority carrier current arriving at the junction. I(BR)AGS, I(BR)GKSG, I(BR)KGs, I(BR)GASG, I(BR)CB s, rCEsatr r B E s s t , rCBsat, rAGsst, r A K s a t , TKGsst-The saturation I(BR)CE S, J ( B R ) E B s, I ( B R ) E C S , I ( B R ) B E s, I ( B R ) B C ,-The resistance is the resistance between the terminal indicated current into the terminal indicated by the first subscript by the first subscript and the reference terminal for the when it is biased at the breakdown voltage with respect saturation conditions stated. to the reference terminal and the other terminal is shortTA-hnbient temperature circuited t o the terminal indicated by the subscript following the subscript s. Tc-Case temperature I(,,),s, I(,,),s-The Note: When the last subscript is omitted, the other terT J-Junction temperature minal is short-circuited to the reference terminal. &-The delay time is the time interval between the apI { B R ) F x , I(BR),x-The current through the collector plication of an input pulse and the time when the resulting junction in a PNPN-type switch at forward breakover minority carrier generated output pulse attains 10 per cent (reverse breakdown) voltage when the gate terminal is of its maximum amplitude. returned to the terminal of the adjacent region through tf-The fall time, which is the time interval (following a stated impedance and/or bias voltage. the storage time) during which the output pulse decays to Note: When the return is through a resistance, the sub10 per cent of the constant value that existed during the script “X” shouldbereplaced by the subscript storage interval. “R.”When the return is through a stated bias tf,-The forward recovery time of a semiconductor voltage, the subscript “X” should be replaced by device. the subscript “V.”
IEEE TRANSACTIONS ON ELECTRON DEVICES 396 August t,-The rise time, which is the time interval during respect to the reference terminal and the other terminal is which the output pulse increases from 10 per cent to 90 short-circuited t o the terminal indicated by the subscript per cent of its maximum amplitude. following the subscript S. &,-The reverserecovery time of a semiconductor Note 1 ) When the last subscript is omitted, the other device. terminal is short-circuited t o the reference terminal. t,-The storage time, which is the time interval between the application of a turnoffpulse and the time when Note 2 ) The abbreviation BV is in common use for this the resulting output pulse decays to 90 per cent of its quantity. amplitude. V{BR)FX, V(BR)Rx-The forward breakover (reverse VFo, VRo-The voltage between the anode and cathode breakdown) voltage in a PNPN-type switch between the terminals of a PNPN-type switch for a given current anode and cathode terminals when the gate terminal is through the collector junction when the switch is in the returned to the terminal of the adjacent region through forward (reverse)blocking state and the gate terminal, a stated impedance and/or bias voltage. if any, is open-circuited. Note: When the return is through a resistance, the subVF S, VR,-The voltage between the anode and cathode script “X” shouldbereplaced by the subscript terminals of aPNPN-type switch fora given current “R.” When the return is through a stated bias through the collector junction when the switch is in the voltage, the subscript “X” should be replaced by forward (reverse) blocking state and the gate terminal is the subscript “V.” short-circuited to the terminal of the adjacent region. V(BR)AGX, ( B R ) G K x G , ( B R I K G X , [ B R I G A X G ,V(BR)CBX, VFX, p-Rx-The voltage between the anode and cathode V(BR)CEX, V c B R I E B X , V ( B R ) E C X , V(BRIBEX7 V,BR,BCx-The terminals of aPNPN-type switch for a given current breakdown (breakover) voltage between the terminals inthrough the collector junction when the switch is in the dicated by the subscripts when the terminal indicated by forward (reverse) blocking state and the gate terminal is the first subscript is biased in the reverse direction with returned to the terminal of the adjacent region through a respect t o the reference terminal and the other terminal is stated impedance and/or bias voltage. returned t o the terminal indicated by the subscript followNote: When the return is through a resistance, the sub- ing the subscript “X” through a stated impedance and/or script “X” shouldbereplaced by the subscript bias voltage. “R.” When the return is through a stated bias voltage, the subscript “X” should be replaced by the subscript “V.” V(BR)-The breakdown voltage of a diode. V BR)FO, V(BR)RO-The forward breakover (reverse breakdown) voltage in a PNPN-type switch between the anode and cathode terminals when the gate terminal, if any, is open-circuited. V B R ) A GVOc B R ) G A O , V(BR)GKO, V(BR)KGO, V(BR)CBO, V BR)CEO, V(BR)EBO, ( B R I E G O , V[BR)BEO, V(BR)BCo-The breakdown (breakover) voltage between the terminals indicated by the subscripts when the terminal indicated by the first subscript is biased in the reverse direction with respect to the reference terminal and the other terminal is open-circuited. Note I) When the last subscript is omitted, the other terminal is returned t o the reference terminal. Note 2) The abbreviation BV is in common use for this quantity. Note 3) When the return is through a resistance, the subscript “X” should be replaced by the subscript “R.” When the return is through a stated bias voltage, the subscript “X” should be replaced by the subscript “V.” V C B ( f I ) , V C E ( f I ) , v E B ( f i ) , VEC(fi),v B E ( f l ) , vBC(fl)-The direct-current open-circuit voltage (floating potential) between the terminal indicated by the first subscript and the reference terminal when the other terminal is biased in the reverse direction with respect to the reference terminal. VGESat-The direct-current voltage between the collecNote: The abbreviation BV is in common use for this tor and the emitter terminals for stated saturation conditions. quantity. V,-Forward voltage of a diode or the anode-to-cathode V ( B R ) F s, V(BR)Rs-The forward breakover (reverse voltage of a PNPN-type switch when the switch is in the breakdown) voltage in a PNPN-type switch between the ON state. anode and cathode terminals when the gate terminal is short-circuited to the terminal of the adjacent region. VGF-The forward gate voltage in a PNPN-type switch. V(BR)AGS) V C B W G K S G , V[BR)KGS,V ( B R ) G A G ( B, R ) C B 5, V ( B R ) E B S , V B R ) E C S , V(BR)BE S, V ( B R ) B C ,-The breakdown (breakover) voltage between the terminals indicated by the subscripts when the terminal indicated by the first subscript is biased in the reverse direction with ( B R ) C S, E VGR-The reverse gate voltage in a PNPN-type switch. VGT-The gate trigger voltage in a PNPN-type switch. VGQ-The gate turn-off voltage in a PNPN-type switch. V , -Reverse voltage of a diode.
I964 for Semiconductor Devices V(RT)-The reach-through voltage (sometimes referred t o as “punch-through” voltage) is that value of reverse voltage at which the space charge region of the collectorbase junction extends to the space-charge region of the emitter-base junction. ACKNOWLEDGMENT The Institute wishes to acknowledge its indebtedness to those who have so freely given of their time and knowledge and have conducted experimental workonwhich many of the IEEE publications are based. This publication was prepared jointly by Task Group 28.4.12 of the Semiconductor Devices Subcommittee of the IRE Solid-state Devices Committee, the IRESymbols Committee, and the Rectifier Device Working Group of the Component Subcommittee of the AIEE Semiconductor Rectifiers Committee. IRE Task Group 28.4.12 J. M. Goldey, Chairman F. P. Burns, Secretary, 1959-61 W. T . Matzen, Secretary, 1961-63 R. S. Biesele N. Holonyak, Jr. F. S. Stein Howard Starke 397 AIEE Rectifier Device Working Group J. R. Thurell, Chairman R. P. Lyon, Secretary P. W. Clarke A. L. DiVenuti L. H. Dixon Alfred Ertel J. Gramels J. Priest F. S. Stein IRE Symbols Committee J. M. Carroll, Chairman C. A. Frieke, Vice-Chairman H. L. Cook, Secretary T. N. Anderson D. Dsusdow H. J. Elschner W. J. Everts D. M. Faller R. T. Haviland D. Howell K. K. Kuller L. A. Meadows C. D. Mitchell R. V. Rice S. V. Soanes R. M. Stern R. G. Stranix H. R. Terhune L. N. Warren
2) Electrical Parameters 2.1 Parameter Symbols 2.2 Subscript for Parameter Symbols 3) Letter Symbols in Alphabetical Order 1. ELECTRICAL QUANTITIES 1 .I Quantity Symbols 1.1.1 Instantaneous values of current, voltage, and power, that vary with time, are represented by the lower- case letter of the proper symbol. Examples: i, u, p
Letter 1 Letter 2 Letter 3 Letter 4 . Letter 5 Letter 6 Letter 7 Letter 8 Letter 9 Letter 10 Letter 11 Letter 12 Letter 13 Letter 14 Letter 15 Letter 16 Letter 17 . the intellect for the attainment of the divine union of love. Proofs from passages and figures of Sacred Scripture. Chapter 10: A division of all apprehensions and ideas
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