ESDM1131 - 3.3 V ESD Protection Diodes
ESDM11313.3 V ESD ProtectionDiodesMicro packaged Diodes for ESDProtectionwww.onsemi.comThe ESD1131 is designed to protect voltage sensitive componentsfrom ESD. Excellent clamping capability, low leakage, and fastresponse time provide best in class protection on designs that areexposed to ESD. Because of its small size, it is suited for use insmartphone, smart-watch, or many other portable / wearableapplications where board space comes at a premium.MARKINGDIAGRAMX4DFN2CASE 718AAFeaturesA Specific Device Code Low Capacitance (4 pF, I/O to GND) Small Body Outline Dimensions 01005 Size: 0.445 x 0.240 mmProtection for the Following IEC Standards:IEC 61000 4 2 (Level 4)Low ESD Clamping VoltageThese Devices are Pb Free, Halogen Free/BFR Free and are RoHSCompliant MAXIMUM RATINGS (TJ 25 C unless otherwise noted)RatingValueUnitOperating Junction Temperature RangeTJ 55 to 125 CStorage Temperature RangeTstg 55 to 150 CLead Solder Temperature Maximum (10 Seconds)TL260 CESDESDPIN CONFIGURATIONAND SCHEMATIC12 SymbolIEC 61000 4 2 Contact (ESD)IEC 61000 4 2 Air (ESD)AkVkV 16 16ORDERING INFORMATIONSee detailed ordering and shipping information on page 2 ofthis data sheet.Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.See Application Note AND8308/D for further description ofsurvivability specs. Semiconductor Components Industries, LLC, 2017March, 2018 Rev. 11Publication Order Number:ESDM1131/D
ESDM1131ELECTRICAL CHARACTERISTICS (TA 25 C unless otherwise specified)ParameterReverse Working VoltageSymbolVRWMBreakdown VoltageVBRConditionsMinTypI/O Pin to GNDIT 1 mA, I/O Pin to GND4.05.0MaxUnit3.3V6.0V0.1mAReverse Leakage CurrentIRVRWM 3.3 V, I/O Pin to GNDClamping VoltageVCIPP 4 A, (8x20 ms pulse)5.6VClamping VoltageTLP (Note 1)VCIPP 8 AIEC 61000 4 2 Level 2 equivalent( 4 kV Contact, 4 kV Air)5.5VIPP 16 AIEC 61000 4 2 Level 2 equivalent( 8 kV Contact, 15 kV Air)7.0Junction CapacitanceCJVR 0 V, f 1 MHz4.0pFProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.TLP conditions: Z0 50 W, tp 100 ns, tr 4 ns, averaging window; t1 30 ns to t2 60 ns.ORDERING 4DFN2(Pb Free)10,000 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.www.onsemi.com2
ESDM1131101E 0391E 0481E 0571E 0661E 07IR (A)C (pF)TYPICAL CHARACTERISTICS1E 08541E 0931E 1021E 1110 3.51E 121E 13 6 5 2.5 1.5 0.50.51.52.53.501234VR (V)Figure 1. CV CharacteristicsFigure 2. Reverse Leakage Current561090CAPACITANCE (pF)8 2(dB) 2 1VBIAS (V)2 4 6765432 8 10 4 31.E 071.E 08101.E 090.51.01.52.02.5FREQUENCY (Hz)FREQUENCY (GHz)Figure 3. S21 Insertion LossFigure 4. Capacitance over Frequencywww.onsemi.com33.0
ESDM113120 2018 1816 16TLP CURRENT (A)TLP CURRENT (A)TYPICAL CHARACTERISTICS14121086 14 12 10 8 64 420 20024681012141816200246VC, VOLTAGE (V)101214181620VC, VOLTAGE (V)Figure 5. Positive TLP I V CurveFigure 6. Negative TLP I V Curve30 3025 2520 20VOLTAGE (V)VOLTAGE (V)815105 15 10 50 1010305070901101300 10150TIME (ns)1030507090110130150TIME (ns)Figure 7. Positive 8 kV ESD Contact DischargeFigure 8. Negative 8 kV ESD Contact Dischargewww.onsemi.com4
ESDM1131IEC61000 4 2 WaveformIEC 61000 4 2 Spec.IpeakLevelTest Voltage (kV)First PeakCurrent(A)Current at30 ns (A)Current at60 ns (A)127.5422415843622.51264830168100%90%I @ 30 nsI @ 60 ns10%tP 0.7 ns to 1 nsFigure 9. IEC61000 4 2 SpecTransmission Line Pulse (TLP) MeasurementLTransmission Line Pulse (TLP) provides current versusvoltage (I V) curves in which each data point is obtainedfrom a 100 ns long rectangular pulse from a chargedtransmission line. A simplified schematic of a typical TLPsystem is shown in Figure 10. TLP I V curves of ESDprotection devices accurately demonstrate the product’sESD capability because the 10s of amps current levels andunder 100 ns time scale match those of an ESD event. Thisis illustrated in Figure 11 where an 8 kV IEC 61000 4 2current waveform is compared with TLP current pulses at8 A and 16 A. A TLP I V curve shows the voltage at whichthe device turns on as well as how well the device clampsvoltage over a range of current levels.50 W CoaxCableS Attenuator 50 W CoaxCable10 MWIMVMDUTVCOscilloscopeFigure 10. Simplified Schematic of a Typical TLPSystemFigure 11. Comparison Between 8 kV IEC 61000 4 2 and 8 A and 16 A TLP Waveformswww.onsemi.com5
MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSX4DFN2, 0.445x0.24, 0.27PCASE 718AAISSUE ADATE 21 MAR 2017SCALE 10:1ABDNOTES:1. DIMENSIONING AND TOLERANCING PERASME Y14.5M, 1994.2. CONTROLLING DIMENSION: MILLIMETERS.3. EXPOSED COPPER ALLOWED AS SHOWN.ÇPIN 1REFERENCEDIMAA1bDEeLETOP VIEWA0.03 C0.03 CA1SIDE VIEWCGENERICMARKING DIAGRAMS*SEATINGPLANEXee/222X0.10 C A BLXbPIN 12XMILLIMETERSMINNOM MAX0.150.180.21 0.030.170 0.185 0.2000.415 0.445 0.4750.210 0.240 0.2700.270 BSC0.105 0.120 0.1350.05 CNOTE 3BOTTOM VIEWX Specific Device Code*This information is generic. Please refer todevice data sheet for actual part marking.Some products may not follow the GenericMarking.RECOMMENDEDMOUNTING FOOTPRINT*0.27PITCH2X0.2112X0.13DIMENSIONS: MILLIMETERSSee Application Note AND8398/D for more mounting details*For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.DOCUMENT NUMBER:DESCRIPTION:98AON29067GX4DFN2, 0.445X0.24, 0.27PElectronic versions are uncontrolled except when accessed directly from the Document Repository.Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.PAGE 1 OF 1ON Semiconductor andare trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others. Semiconductor Components Industries, LLC, 2019www.onsemi.com
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IEC 61000 4 2 Contact (ESD) IEC 61000 4 2 Air (ESD) ESD ESD 16 16 kV kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be
An Electrostatic Discharge (ESD) safe work area and proper ESD handling procedures (that conform to ANSI/ESD S20.20 -1999 or ANSI/ ESD S20.20-2007) are mandatory to avoid ESD damage when handling subassemblies or components found in the MS2717A. Additional information pertaining to ESD can be found at the ESD Association Web site:
ANSI/ESD STM97.2 100 volts ESD TR53 Footwear Section 1.0 x 109 ohms S20.20 -2007 TABLE 3. EPA ESD Control Items Technical Requirement ESD Control Item Product Qualification1 Compliance Verification Test Method Required Limit(s)2 Test Method Required Limit(s) EPA Worksurface ANSI/ESD S 4.1 and/or ANSI/ESD STM 4.2 1 x 109 ohms and/or 200
ANSI/ESD S20.20 (a complimentary.pdf copy can be downloaded at no charge from the ESD Association website ESDA.org. Also, other documents such as the ESD Handbook ESD TR20.20 can be purchased). “The 100 volt HBM limit was selected for ANSI/ESD S20.20 as the baseline susceptibility threshold since a large majority of the ESD
ESD products 1 Armeka Engineering Ltd has offered ESD products and services for over ten years and been developed to the leading ESD expert . We offer to our customers comprehensive ESD service, training, consulting, planning and building of ESD areas. You can get all necessary materials, products and measuring devices to ESD protection .
1 IEC 61000-4-2 System ESD Immunity 1.1 IEC61000-4-2 Overview The IEC 61000-4-2 standard covers system level ESD immunity. Electrostatic Discharge can be very harmful to a system and even a small amount of voltage can damage components. Most systems require some sort of IEC ESD protection, as any user accessible areas can be subjected to ESD .
ELECTROSTATIC DISCHARGE (ESD): Proper handling of ESD, plays an important role in protecting devices from electro static damages, reduces the losses and increase productivity. Our ESD Safe Furniture meets to ANSI/ESD S20.20-2014 Revision of ANSI/ESD S20.20-2007 ESD Association Standard, NY USA. - Size requirement - Load bearing capacity (UDL)
ESD training status of attendees at a University-sponsored ESD training course held by experts in ESD; (2) assess the effective-ness of the current ESD training regimen and its impact on ESD utilization in the United States; and (3) gaugetrainees' attitude towards ESD. Methods The study was approved by the University of Florida Institution-
Le fabricant et l’utilisateur d’un additif alimentaire sont tenus: a. de transmettre à l’OSAV toute nouvelle information scientifique ou techni-que susceptible d’influer sur l’évaluation de la sécurité de cet additif; et b. d’informer l’OSAV, sur demande, des usages de l’additif concerné. Art. 11 Modification des annexes L’OSAV adapte régulièrement les annexes de la .
