ELECTRONIC DEVICES AND CIRCUITS (EDC) LABORATORY MANUAL
ELECTRONIC DEVICES AND CIRCUITS (EDC)LABORATORY MANUAL(B.E. THIRD SEMESTER - BEENE302P / BEECE302P/ BEETE302P)Prepared byProf. S. Irfan AliHODPROF. M. NASIRUDDINDEPARTMENT OF ELECTRONICS & TELECOMMUNICATIONENGINEERINGANJUMAN COLLEGE OF ENGINEERING AND TECNHOLOGY(AFFILIATED TO RTMNU & APPROVED BY AICTE)
VISIONWE ENDEAVOR TO IMPART QUALITY EDUCATION AND PROVIDEINTELLECT AND COMPETENT ENGINEERS, EQUIPPED TO MEETTHE STANDARDS OF CHANGING INTERNATIONAL TECHNICALSCENARIO.MISSIONOUR MISSION IS TO PROVIDE VALUE BASED TECHNICALEDUCATION AND TO MOULD THE CHARACTER OF THE YOUNGERGENERATION, THROUGH A SYNTHESIS OF SCIENCE &SPIRITUALITY, SO THAT THEIR EARNEST ENDEAVOR TO ACHIEVEPROSPERITY IN LIFE IS MATCHED BY AN ARDENT DESIRE TOEXTEND SELFLESS SERVICE TO THE SOCIETY, EACHCOMPLEMENTING THE OTHER.OBJECTIVETO LET THE STUDENTS BUILT THE ELECTRONIC CIRCUITS ONBREADBOARD AND MULTISIM OR PSPICE, INTERPRET BASICCONCEPTS OF DIFFERENT SEMICONDUCTOR COMPONENTS,DEMONSTRATE THEIR WORKING IN THE CIRCUITS, EVALUATEPERFORMANCE PARAMETERS AND PLOT THE CHARACTERISTICS.
COURSE OUTCOME1. The students will be able to interpret the basic concepts of different semiconductorcomponents as a group & individual.2. The students will be able to demonstrate the working of semiconductor devices indifferent electronic circuits as a group & individual.3. The students will be able to evaluate different performance parameters ofsemiconductor devices and various electronics circuits like oscillators,multivibrators, amplifiers, etc.4. The students will be able to explain the plot of characteristics of semiconductordevices and various electronics circuits like oscillators, multivibrators, amplifiers,etc. as a group & individual.5. The students will be able to build the electronic circuit on breadboard and Multisimor Pspice, examine and show its working as a group & Correlation levels 1: Slight (Low) 2: Moderate (Medium) 3:Substantial (High)
Anjuman College of Engineering and TechnologyDepartment of Electronics and Telecommunication EngineeringELECTRONIC DEVICES AND CIRCUITS LAB (BEETE302P)Do’s1.2.3.4.5.Be punctual and regular in the lab.Maintain Discipline all the time and obey the instructions.Check the connections properly before turning ON the circuit.Turn OFF the circuit immediately if you see any component heating.Dismount all the components and wires before returning the kit.Don’ts1.2.3.4.Don’t touch live electric wires.Don’t turn ON the circuit unless it is completed.Avoid making loose connections.Don’t leave the lab without permission.
LIST OF EXPERIMENTS1.TO PLOT V-I CHARACTERISTICS OF SI/GE DIODE [CO1,2,3,4,5,6]. 22.TO PLOT V-I CHARACTERISTICS OF ZENER DIODE . 73.TO STUDY HWR AND FWR WITH C FILTER . 124.TO STUDY INPUT-OUTPUT CHARACTERISTICS OF COMMON EMITTER CONFIGURATION. . 165.TO DETERMINE THE H-PARAMETER OF CE AMPLIFIERS. 226.TO STUDY INPUT-OUTPUT CHARACTERISTICS OF COMMON BASE CONFIGURATION. 287.TO DETERMINE THE H-PARAMETER OF CB AMPLIFIERS. . 348.TO STUDY INPUT-OUTPUT CHARACTERISTICS OF COMMON COLLECTOR CONFIGURATION. . 399.TO DETERMINE THE H-PARAMETER OF CC AMPLIFIERS . 4410.TO FIND BANDWIDTH OF RC COUPLED AMPLIFIER. . 4911.TO STUDY RC OSCILLATOR (RC-PHASE SHIFT AND WIEN BRIDGE OSCILLATOR). . 5512.TO STUDY LC OSCILLATORS (COLPITT'S AND HARTLEY OSCILLATOR). . 5913.TO STUDY TRANSISTORIZED ASTABLE MULTIVIBRATOR. . 6314.TO STUDY TRANSISTORIZED MONOSTABLE MULTIVIBRATOR. . 6715.TO STUDY TRANSISTORIZED BISTABLE MULTIVIBRATOR. 6716.TO STUDY CROSS-OVER DISTORTION IN CLASS-B POWER AMPLIFIER. . 6717.TO FIND THE OPERATING POINT OF TRANSISTOR. 7118.TO STUDY JFET CHARACTERISTICS. . 7419.TO STUDY MOSFET CHARACTERISTICS. . 7420.TO STUDY THE CHARACTERISTICS OF VVR/VDR . 74
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication Engineering1. To Plot V-I Characteristics of Si/Ge Diode[CO1,2,3,4,5,6]AIM:To draw the Voltage – Current (V-I) characteristics of PN junction diodeunder forward and reverse bias condition.APPARATUS:Trainer Kit, Connecting Wires/Breadboard, components, wires/PC withMultisim Software.CIRCUIT DIAGRAM:R1R225%1kΩKey A220ΩXMM1XMM2D11N4007V130 VFigure 1.1: Forward Bias Circuit of PN Junction DiodeR3R450%1kΩKey A220ΩXMM4D21N4007XMM3V230 VFigure 1.2: Reverse Bias Circuit of PN Junction DiodeEDC Lab Manual - To Plot V-I Characteristics of Si/Ge Diode [CO1,2,3,4,5,6]2Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringFigure 1.3: V-I Characteristics PN Junction DiodeTHEORY:A PN junction is formed by diffusing P-type material to one half side andN-type material another half side. The plane dividing the two zones isknown as a junction.FORWARD BIAS:When the positive terminal of the external battery is connected to the Pregion and negative terminal is connected to the N-region. Then it is calledas forward biased PN junction.REVERSE BIAS:When the negative terminal of the external battery is connected to the Pregion and positive terminal is connected to the N-region. Then it is calledas reverse biased PN junction.EDC Lab Manual - To Plot V-I Characteristics of Si/Ge Diode [CO1,2,3,4,5,6]3Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringPROCEDURE: For forward bias characteristic, make the connections as shown inthe figure 1.1. Vary the voltage from minimum to its maximum value and notedown the corresponding forward voltage across the diode and theforward current through the diode using voltmeter and ammeterrespectively. For reverse bias characteristic, make the connections as shown in thefigure 1.2. Vary the voltage from minimum to its maximum value and notedown the corresponding reverse voltage across the diode and thereverse current through the diode using voltmeter and ammeterrespectively. Plot the V-I characteristic for the forward and reverse bias of diode.OBSERVATION TABLE:Forward Characteristics Reverse CharacteristicsSr. No.(V)(mA)(V)(μA)123456789101112131415EDC Lab Manual - To Plot V-I Characteristics of Si/Ge Diode [CO1,2,3,4,5,6]4Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringEDC Lab Manual - To Plot V-I Characteristics of Si/Ge Diode [CO1,2,3,4,5,6]5Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringCALCULATIONS: Cut-in Voltage Knee Voltage V Static forward Resistance, / / Dynamic Forward Resistance, / / Static Reverse Resistance, / / Dynamic Reverse Resistance, / / RESULT:Voltage–Current (V-I) characteristics of PN junction diode under forwardand reverse bias condition has been observed.EDC Lab Manual - To Plot V-I Characteristics of Si/Ge Diode [CO1,2,3,4,5,6]6Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication Engineering2. To Plot V-I Characteristics of Zener Diode[CO1,2,3,4,5,6]AIM:To draw the Voltage – Current (V-I) characteristics of Zener diode underforward and reverse bias condition.APPARATUS:Trainer Kit, Connecting Wires/Breadboard, components, wires/PC withMultisim Software.CIRCUIT DIAGRAM:R11kΩ50%Key AR2470ΩV1D102DZ4.7XMM1XMM230 VFigure 2.1: Forward Bias Circuit of Zener DiodeR31kΩ50%Key AV2R4470ΩD202DZ4.7XMM3XMM430 VFigure 2.2: Reverse Bias Circuit of Zener DiodeEDC Lab Manual - To Plot V-I Characteristics of Zener Diode [CO1,2,3,4,5,6]7Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringFigure 2.3: V-I Characteristics Zener DiodeTHEORY:A PN junction in Zener diode is formed by diffusing heavily doped P-typematerial to one half side and heavily doped N-type material other half side.The plane dividing the two zones is known as a junction.FORWARD BIAS:When the positive terminal of the external battery is connected to the Pregion and negative terminal is connected to the N-region on Zener diode.Then it is said to be forward biased.REVERSE BIAS:When the negative terminal of the external battery is connected to the Pregion and positive terminal is connected to the N-region of Zener diode.Then it is said to be reverse biased.EDC Lab Manual - To Plot V-I Characteristics of Zener Diode [CO1,2,3,4,5,6]8Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringPROCEDURE: For forward bias characteristic, make the connections as shown inthe figure 2.1. Vary the voltage from minimum to its maximum value and notedown the corresponding forward voltageacross the Zener diodeand the forward current through the Zener diode using voltmeterand ammeter respectively. For reverse bias characteristic, make the connections as shown in thefigure 2.2. Vary the voltage from minimum to its maximum value and notedown the corresponding reverse voltage across the diode and thereverse current through the diode using voltmeter and ammeterrespectively. Plot the V-I characteristic for the forward and reverse bias of diode.OBSERVATION TABLE:Forward Characteristics Reverse CharacteristicsSr. No.(V)(mA)(V)(μA)123456789101112131415EDC Lab Manual - To Plot V-I Characteristics of Zener Diode [CO1,2,3,4,5,6]9Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringEDC Lab Manual - To Plot V-I Characteristics of Zener Diode [CO1,2,3,4,5,6]10Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringCALCULATIONS: Cut-in Voltage Knee Voltage V Static forward Resistance, / / Dynamic Forward Resistance, / / Static Reverse Resistance, / / Dynamic Reverse Resistance, / / RESULT:Voltage–Current (V-I) characteristics of Zener diode under forward andreverse bias condition has been observed.EDC Lab Manual - To Plot V-I Characteristics of Zener Diode [CO1,2,3,4,5,6]11Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication Engineering3. To study HWR and FWR with C filter [CO1,2,3,4,5,6]AIM:To study Half Wave and Full Wave rectifier with and without Capacitorfilter.APPARATUS:Trainer Kit, Connecting Wires/Breadboard, components, wires/PC withMultisim Software.CIRCUIT DIAGRAM:XSC1Ext T rig BA D112 Vrms50 Hz0 1N4007GP C11µFR110kΩJ1Key AV1Figure 3.1: Half wave Rectifier with and without filterExt T rig XSC11N4007GPD1 V1R110kΩStepDown C14µFT1220 Vrms50 Hz0 BAD2J1Key A1N4007GPFigure 3.2: Center Tap Full Wave Rectifier with and without filterEDC Lab Manual - To study HWR and FWR with C filter [CO1,2,3,4,5,6]12Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringXSC1Ext T rig BA 2V1220 Vrms50 Hz0 0 J1Key AD1T1 241133R11kΩ1B4B42C150µFFigure 3.3: Full Wave Bridge Rectifier with and without filterFigure 3.4: Input A.C. SignalFigure 3.5: Half wave rectified Output Signal without filterFigure 3.6: Half wave rectified Output Signal with filterFigure 3.7: Full wave rectified Output Signal without filterFigure 3.8: Full wave rectified Output Signal with filterEDC Lab Manual - To study HWR and FWR with C filter [CO1,2,3,4,5,6]13Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringTHEORY:HALF WAVE RECTIFIER:In half wave rectification, the rectifier conducts current only during thepositive half cycles of input ac supply. The negative half cycles aresuppressed. During positive half cycle, the diode becomes forward biasedand hence half cycle appears at the output. During negative half cycle, thediode becomes reverse biased and conducts no current, hence output iszero for this period.FULL WAVE RECTIFIER:In full wave rectification, current flows through the load in the samedirection for both half cycles of input ac voltage. This can be achieved withtwo diodes working alternately. For positive half cycle, one diode suppliescurrent to the load and for the negative half cycle, the other diode does so.In this way full wave rectifier produces dc output.PROCEDURE: Connect the components as shown in figure. Run the circuit by pressingbutton or Pressing F5 key ofkeyboard. Double click on Oscilloscope to get the nature of output. Adjust Scale and Y position in CRO to adjust input and outputwaveforms on its screen. Measure time period and frequency of output signal with andwithout filter by pausing the simulation by pressing the pause button Adjust one pointer at the start of cycle and another at it’s end to getthe time period as shown belowIn this case time period is T2-T1 9.981 msEDC Lab Manual - To study HWR and FWR with C filter [CO1,2,3,4,5,6]14Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringOBSERVATION TABLE:Half Wave RectifierDescriptionAmplitude (Vm) Time Period (T)Frequency (f)Amplitude (Vm) Time Period (T)Frequency (f)Input VoltageOutput Voltagewithout filterOutput Voltagewith filterFull Wave RectifierDescriptionInput VoltageOutput Voltagewithout filterOutput Voltagewith filterRESULT:Thus, Half Wave and Full Wave rectifier with and without Capacitor filterhave been studied.EDC Lab Manual - To study HWR and FWR with C filter [CO1,2,3,4,5,6]15Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication Engineering4. To study I/O characteristics of CE Configuration.[CO1,2,3,4,5,6]AIM:To study Input-output characteristics of Common Emitter Configuration.APPARATUS:Trainer Kit, Connecting Wires/Breadboard, components, wires/PC withMultisim Software.CIRCUIT DIAGRAM:XMM1R4XMM2R11kΩQ11kΩ50%Key AR3R21kΩ50%Key B20kΩBC547AXMM4XMM3V1V230 V30 VFigure 4.1: Common Emitter Amplifier circuit using npn transistorEDC Lab Manual - To study I/O characteristics of CE Configuration. [CO1,2,3,4,5,6]16Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringFigure 4.2: Input CharacteristicsFigure 4.3: Output CharacteristicsTHEORY:Bipolar junction transistor (BJT) is a three terminal (emitter, base,collector) semiconductor device. There are two types of transistors namelyNPN and PNP. It consists of two P-N junctions namely emitter junction andcollector junction.EDC Lab Manual - To study I/O characteristics of CE Configuration. [CO1,2,3,4,5,6]17Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringIn Common Emitter configuration, the input is applied between base andemitter and the output is taken from collector and emitter. Here emitter iscommon to both input and output and hence the name common emitterconfiguration.Input characteristics are obtained between the input current and inputvoltage taking output voltage as constant. It is plotted between VBE andIB at constant VCE in CE configuration.Output characteristics are obtained between the output voltage andoutput current taking input current as constant. It is plotted between VCEand IC at constant IB in CE configuration.INPUT CHARACTERISTICS:It is the curve between base currentconstant collector emitter voltage.and base emitter voltageatINPUT RESISTANCE:It is defined as the ratio of change in base-emitter voltage to the change inbase current at constant.PROCEDURE:Input Characteristics Connect the transistor in CE configuration as per circuit diagram Keep output voltage VCE 1V by varying VCC. Varying VBB gradually, note down both base current IB and base–emitter voltage (VBE). Repeat above procedure (step 3) for various values of VCE.Output Characteristics Make the connections as per circuit diagram. By varying VBB keep the base current IB 20μA. Varying VCC gradually, note down the readings of collector current(IC) and collector-emitter voltage (VCE). Repeat above procedure (step 3) for different values of IB.EDC Lab Manual - To study I/O characteristics of CE Configuration. [CO1,2,3,4,5,6]18Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringOBSERVATION TABLE:INPUT CHARACTERISTICSVCE V (e.g.1V)VBE (volts)IB (mA)or(μA)VCE V (e.g.4V)VBE (volts)IB (mA)or(μA)OUTPUT CHARACTERISTICSIB (e.g.20μA)VCE (volts)IC (mA)IB (e.g.60 μA)VCE (volts)IC (mA)EDC Lab Manual - To study I/O characteristics of CE Configuration. [CO1,2,3,4,5,6]19Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringEDC Lab Manual - To study I/O characteristics of CE Configuration. [CO1,2,3,4,5,6]20Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication EngineeringCALCULATIONS:Input resistance:Output resistance: // ( ())RESULT:Thus, the input and output characteristics of CE configuration is plotted.1. Input Resistance (Ri) Ω2. Output Resistance (Ro) ΩEDC Lab Manual - To study I/O characteristics of CE Configuration. [CO1,2,3,4,5,6]21Prepared by: Prof. S. Irfan Ali
ANJUMAN COLLEGE OF ENGINEERNG AND TECHNOLOGYDepartment of Electronics and Telecommunication Engineering5. To determine the h-parameter of CE amplifiers.[CO1,2,3,4,5,6]AIM:To determine the h-parameter of CE amplifiersAPPARATUS:Trainer Kit, Connecting Wires/Breadboard, components, wires/PC withMultisim Software.CIRCUIT DIAGRAM:XMM1R4XMM2R11kΩQ11kΩ50%Key AR3R21kΩ50%Key B20kΩBC547AXMM4XMM3V1V230 V30 VFigure 5.1: Common Emitter Amplifier circuit using npn transistorEDC Lab Manual - To determine the h-parameter of CE amplifie
ELECTRONIC DEVICES AND CIRCUITS LAB (BEETE302P) Do’s 1. Be punctual and regular in the lab. 2. Maintain Discipline all the time and obey the instructions. 3. Check the connections properly before turning ON the circuit. 4. Turn OFF the circuit immediately if you see any component heating. 5. Dismount all the components and wires before .
EDC is a flammable, toxic chemical and should be handled with extreme care. Personnel should be properly trained in the handling of EDC and should always wear the proper protective equipment when working with, and around EDC. All users
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Contemporary Electric Circuits, 2nd ed., Prentice-Hall, 2008 Class Notes Ch. 9 Page 1 Strangeway, Petersen, Gassert, and Lokken CHAPTER 9 Series–Parallel Analysis of AC Circuits Chapter Outline 9.1 AC Series Circuits 9.2 AC Parallel Circuits 9.3 AC Series–Parallel Circuits 9.4 Analysis of Multiple-Source AC Circuits Using Superposition 9.1 AC SERIES CIRCUITS
In this Self-Study Programme, you will be made familiar with the EDC 16 engine management system, using the V10-TDI-engine as an example. Your attention will be drawn to changes between the V10-TDI- and R5-TDI-engines. With EDC 16 electronic diesel control, an engine management system has been made available that meets these demands.
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