LTC4357 - Positive High Voltage Ideal Diode Controller
LTC4357Positive High VoltageIdeal Diode ControllerFeaturesnnnnnnDescriptionReduces Power Dissipation by Replacing a PowerSchottky Diode with an N-Channel MOSFET0.5µs Turn-Off Time Limits Peak Fault CurrentWide Operating Voltage Range: 9V to 80VSmooth Switchover without OscillationNo Reverse DC CurrentAvailable in 6-Lead (2mm 3mm) DFN and8-Lead MSOP PackagesApplicationsnnnnnN 1 Redundant Power SuppliesHigh Availability SystemsAdvancedTCA SystemsTelecom InfrastructureAutomotive SystemsThe LTC 4357 is a positive high voltage ideal diode controller that drives an external N-channel MOSFET to replace aSchottky diode. When used in diode-OR and high currentdiode applications, the LTC4357 reduces power consumption, heat dissipation, voltage loss and PC board area.The LTC4357 easily ORs power sources to increase totalsystem reliability. In diode-OR applications, the LTC4357controls the forward voltage drop across the MOSFET toensure smooth current transfer from one path to the otherwithout oscillation. If the power source fails or is shorted,a fast turn-off minimizes reverse current transients.L, LT, LTC, LTM, Linear Technology and the Linear logo are registered trademarks andHot Swap is a trademark of Linear Technology Corporation. All other trademarks are theproperty of their respective owners.Typical Application48V, 10A Diode-ORPower Dissipation vs Load Current6FDB3632VINA48VINGATELTC4357OUTVDDVOUT TO LOADGNDDIODE (MBR10100)432FET WER DISSIPATION (W)5OUT0246CURRENT (A)8104357 TA01bVDDGND4357 TA01*SEE FIGURES 2 AND 3 FOR ADDITIONAL OPTIONAL COMPONENTS4357fd
LTC4357Absolute Maximum Ratings(Notes 1, 2)Supply VoltagesIN. –1V to 100VOUT, VDD. –0.3V to 100VOutput VoltageGATE (Note 3). VIN – 0.2V to VIN 10VOperating Ambient Temperature RangeLTC4357C. 0 C to 70 CLTC4357I. –40 C to 85 CLTC4357H. –40 C to 125 CLTC4357MP. –55 C to 125 CStorage Temperature Range. –65 C to 150 CLead Temperature (Soldering, 10 sec)MS Package. 300 Cpin ConfigurationTOP VIEWIN 2TOP VIEW6 VDDOUT 17GNDINNCNCGATE5 NC4 GNDGATE 312348765OUTVDDNCGNDMS8 PACKAGE8-LEAD PLASTIC MSOPTJMAX 125 C, θJA 163 C/WDCB PACKAGE6-LEAD (2mm s 3mm) PLASTIC DFNTJMAX 125 C, θJA 90 C/WEXPOSED PAD (PIN 7) PCB GND CONNECTION OPTIONALORDER INFORMATIONLEAD FREE FINISHTAPE AND REELPART MARKING*PACKAGE DESCRIPTIONTEMPERATURE RANGELTC4357CMS8#PBFLTC4357CMS8#TRPBFLTCXD8-Lead Plastic MSOP0 C to 70 CLTC4357IMS8#PBFLTC4357IMS8#TRPBFLTCXD8-Lead Plastic MSOP–40 C to 85 CLTC4357HMS8#PBFLTC4357HMS8#TRPBFLTCXD8-Lead Plastic MSOP–40 C to 125 CLTC4357MPMS8#PBFLTC4357MPMS8#TRPBFLTFWZ8-Lead Plastic MSOP–55 C to 125 CLEAD BASED FINISHTAPE AND REELPART MARKING*PACKAGE DESCRIPTIONTEMPERATURE RANGELTC4357MPMS8LTC4357MPMS8#TRLTFWZ8-Lead Plastic MSOP–55 C to 125 CLEAD FREE FINISHTAPE AND REEL (MINI)TAPE AND REELPART MARKING*PACKAGE DESCRIPTIONTEMPERATURE RANGELTC4357CDCB#TRMPBFLTC4357CDCB#TRPBFLCXF6-Lead (2mm 3mm) Plastic DFN0 C to 70 CLTC4357IDCB#TRMPBFLTC4357IDCB#TRPBFLCXF6-Lead (2mm 3mm) Plastic DFN–40 C to 85 CLTC4357HDCB#TRMPBFLTC4357HDCB#TRPBFLCXF6-Lead (2mm 3mm) Plastic DFN–40 C to 125 CTRM 500 pieces. *Temperature grades are identified by a label on the shipping container.Consult LTC Marketing for parts specified with wider operating temperature ranges.Consult LTC Marketing for information on lead based finish parts.For more information on lead free part marking, go to: http://www.linear.com/leadfree/For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/4357fd
LTC4357Electrical CharacteristicsThe l denotes the specifications which apply over the full operatingtemperature range, otherwise specifications are at TA 25 C. VOUT VDD, VDD 9V to 80V unless otherwise noted.SYMBOLPARAMETERCONDITIONSMINVDDOperating Supply RangelIDDSupply CurrentlIININ Pin CurrentVIN VOUT 1VlIOUTOUT Pin CurrentVIN VOUT 1VlDVGATEExternal N-Channel Gate Drive(VGATE – VIN)VDD, VOUT 20V to 80VVDD, VOUT 9V to 20VllIGATE(UP)External N-Channel Gate Pull-Up Current VGATE VIN, VIN – VOUT 0.1VIGATE(DOWN)External N-Channel Gate Pull-DownCurrent in Fault ConditiontOFFGate Turn-Off Time–VIN – VOUT 55mV ––1V,VGATE – VIN 1V, CGATE 0pFDVSDSource-Drain Regulation Voltage(VIN – VOUT)VGATE – VIN 2.5VVGATE VIN 5VNote 1: Stresses beyond those listed under Absolute Maximum Ratingsmay cause permanent damage to the device. Exposure to any AbsoluteMaximum Rating condition for extended periods may affect devicereliability and ns2555mVNote 2: All currents into pins are positive, all voltages are referenced toGND unless otherwise specified.Note 3: An internal clamp limits the GATE pin to a minimum of 10V aboveIN or 100V above GND. Driving this pin to voltages beyond this clamp maydamage the device.Typical Performance CharacteristicsVDD Current (IDD vs VDD)800IN Current (IIN vs VIN)400VDD VOUT VIN 1VVDD VOUT VIN 1VOUT Current (IOUT vs VOUT)150VDD VOUT VIN – 1V300600180VDD VOUT VIN 1V400IOUT (µA)IIN (µA)IDD (µA)1202009060100200VDD VOUT VIN – 1V30002040VDD (V)60804357 G01002040VIN (V)60804357 G02002040VOUT (V)60804357 G034357fd
LTC4357Typical Performance Characteristics15 VGATE 2.5V0DVGATE vs GATE Current(DVGATE vs IGATE)OUT Current (IOUT vs VIN)125VIN 18V100VIN 12V75VOUT 12V, VIN VDDIGATE (µA) VGATE (V)10–25IOUT (µA)25GATE Current vs Forward Drop(IGATE vs DVSD)VIN 9V50525–50–50050VSD (mV)1000150051015IGATE (µA)204357 G045000250286VIN (V)41012144357 G064357 G05FET Turn-Off Timevs GATE CapacitanceFET Turn-Off Timevs Initial Overdrive400VGATE VIN 1V VSD 55mV –1V400VIN 48V VSD VINITIAL –1V300tPD (ns)tOFF (ns)3002001001000200020406008000.20.60.4VINITIAL (V)CGATE (nF)4357 G07FET Load Current vs DVSD10VIN 48V VSD 55mV VFINALVIN 48V WITH FET (FDB3632)8tPD (ns)LOAD CURRENT (A)1500100050001.04357 G08FET Turn-Off Timevs Final Overdrive20000.8642–1–0.8–0.4–0.6VFINAL (V)–0.20005025 VSD (mV)754357 G104357 G094357fd
LTC4357Pin FunctionsExposed Pad: Exposed pad may be left open or connectedto GND.GATE: Gate Drive Output. The GATE pin pulls high, enhancing the N-channel MOSFET when the load current createsmore than 25mV of voltage drop across the MOSFET.When the load current is small, the gate is actively drivento maintain 25mV across the MOSFET. If reverse currentdevelops more than –25mV of voltage drop across theMOSFET, a fast pull-down circuit quickly connects theGATE pin to the IN pin, turning off the MOSFET.is used to control the source-drain voltage across theMOSFET. The GATE fast pull-down current is returnedthrough the IN pin. Connect this pin as close as possibleto the MOSFET source.NC: No Connection. Not internally connected.GND: Device Ground.OUT: Drain Voltage Sense. OUT is the cathode of the idealdiode and the common output when multiple LTC4357sare configured as an ideal diode-OR. It connects to thedrain of the N-channel MOSFET. The voltage sensed atthis pin is used to control the source-drain voltage acrossthe MOSFET.IN: Input Voltage and GATE Fast Pull-Down Return. IN isthe anode of the ideal diode and connects to the sourceof the N-channel MOSFET. The voltage sensed at this pinVDD: Positive Supply Input. The LTC4357 is powered fromthe VDD pin. Connect this pin to OUT either directly orthrough an RC hold-up circuit.block diagramINOUTGATE17VCHARGE PUMPVDD –25mVFPDCOMP –GATEAMP– –IN25mVGND4357 BD4357fd
LTC4357OperationHigh availability systems often employ parallel-connectedpower supplies or battery feeds to achieve redundancyand enhance system reliability. ORing diodes have beena popular means of connecting these supplies at the pointof load. The disadvantage of this approach is the forwardvoltage drop and resulting efficiency loss. This drop reducesthe available supply voltage and dissipates significantpower. Using an N-channel MOSFET to replace a Schottkydiode reduces the power dissipation and eliminates theneed for costly heat sinks or large thermal layouts in highpower applications.The LTC4357 controls an external N-channel MOSFET toform an ideal diode. The voltage across the source anddrain is monitored by the IN and OUT pins, and the GATEpin drives the MOSFET to control its operation. In effectthe MOSFET source and drain serve as the anode andcathode of an ideal diode.At power-up, the load current initially flows through thebody diode of the MOSFET. The resulting high forwardvoltage is detected at the IN and OUT pins, and theLTC4357 drives the GATE pin to servo the forward dropto 25mV. If the load current causes more than 25mV ofvoltage drop when the MOSFET gate is driven fully on,the forward voltage is equal to RDS(ON) ILOAD.If the load current is reduced causing the forward dropto fall below 25mV, the MOSFET gate is driven lower bya weak pull-down in an attempt to maintain the drop at25mV. If the load current reverses and the voltage acrossIN to OUT is more negative than –25mV the LTC4357responds by pulling the MOSFET gate low with a strongpull-down.In the event of a power supply failure, such as if the outputof a fully loaded supply is suddenly shorted to ground,reverse current temporarily flows through the MOSFET thatis on. This current is sourced from any load capacitanceand from the other supplies. The LTC4357 quickly respondsto this condition turning off the MOSFET in about 500ns,thus minimizing the disturbance to the output bus.Applications InformationMOSFET SelectionORing Two-Supply OutputsThe LTC4357 drives an N-channel MOSFET to conductthe load current. The important features of the MOSFETare on-resistance, RDS(ON), the maximum drain-sourcevoltage, VDSS, and the gate threshold voltage.Where LTC4357s are used to combine the outputs of twopower supplies, the supply with the highest output voltagesources most or all of the load current. If this supply’soutput is quickly shorted to ground while delivering loadcurrent, the flow of current temporarily reverses andflows backwards through the LTC4357’s MOSFET. Whenthe reverse current produces a voltage drop across theMOSFET of more than –25mV, the LTC4357’s fast pull-downactivates and quickly turns off the MOSFET.Gate drive is compatible with 4.5V logic-level MOSFETsin low voltage applications (VDD 9V to 20V). At highervoltages (VDD 20V to 80V) standard 10V threshold MOSFETs may be used. An internal clamp limits the gate driveto 15V between the GATE and IN pins. An external Zenerclamp may be added between GATE and IN for MOSFETswith a VGS(MAX) of less than 15V.The maximum allowable drain-source voltage, BVDSS,must be higher than the power supply voltage. If an inputis connected to GND, the full supply voltage will appearacross the MOSFET.If the other, initially lower, supply was not delivering loadcurrent at the time of the fault, the output falls until thebody diode of its ORing MOSFET conducts. Meanwhile,the LTC4357 charges its MOSFET gate with 20µA until theforward drop is reduced to 25mV. If instead this supply wasdelivering load current at the time of the fault, its associated ORing MOSFET was already driven at least partiallyon, and the LTC4357 will simply drive the MOSFET gateharder in an effort to maintain a drop of 25mV.4357fd
LTC4357Applications InformationLoad SharingInput Short-Circuit FaultsThe application in Figure 1 combines the outputs of multiple,redundant supplies using a simple technique known asdroop sharing. Load current is first taken from the highestoutput, with the low outputs contributing as the outputvoltage falls under increased loading. The 25mV regulationtechnique ensures smooth load sharing between outputswithout oscillation. The degree of sharing is a function ofRDS(ON), the output impedance of the supplies and theirinitial output voltages.The dynamic behavior of an active, ideal diode enteringreverse bias is most accurately characterized by a delayfollowed by a period of reverse recovery. During the delayphase some reverse current is built up, limited by parasiticresistances and inductances. During the reverse recoveryphase, energy stored in the parasitic inductances is transferred to other elements in the circuit. Current slew ratesduring reverse recovery may reach 100A/µs or higher.M1FDB3632VINA48V48V INGATELTC4357OUTVDDGND4357 F01Figure 1. Droop Sharing Redundant SuppliesHigh slew rates coupled with parasitic inductances in series with the input and output paths may cause potentiallydestructive transients to appear at the IN and OUT pinsof the LTC4357 during reverse recovery. A zero impedance short-circuit directly across the input of the circuitis especially troublesome because it permits the highestpossible reverse current to build up during the delay phase.When the MOSFET finally commutates the reverse currentthe LTC4357 IN pin experiences a negative voltage spike,while the OUT pin spikes in the positive direction.To prevent damage to the LTC4357 under conditions ofinput short-circuit, protect the IN pin and OUT pin asshown in Figure 2. The IN pin is protected by clampingto the GND pin in the negative direction. Protect the OUTpin with a clamp, such as with a TVS or TransZorb, or witha local bypass capacitor of at least 10µF. In low voltageapplications the MOSFET's drain-source breakdown maybe sufficient to protect the OUT pin, provided BVDSS VIN 100V.Parasitic inductance between the load bypass and theLTC4357 allows a zero impedance input short to collapsethe voltage at the VDD pin, which increases the total turn-offtime (tOFF). For applications up to 30V, bypass the VDD pinwith 39µF; above 30V use at least 100µF. If VDD is poweredfrom the output side, one capacitor serves to guard againstVDD collapse and also protect OUT from voltage spikes.If the OUT pin is protected by a diode clamp or if VDD ispowered from the input side, decouple the VDD pin with aseparate 100Ω, 100nF filter (see Figure 3). In applicationsabove 10A increase the filter capacitor to 1µF.4357fd
LTC4357Applications InformationINPUT PARASITICINDUCTANCEVIN –INPUTSHORTOUTPUT PARASITICINDUCTANCEREVERSE RECOVERY CURRENT UTDCLAMPSMAT70ACLOADGND4357 F02Figure 2. Reverse Recovery Produces Inductive Spikes at the IN and OUT Pin.The Polarity of Step Recovery Spikes is Shown Across Parasitic InductancesOUTPUT VOUTR1100ΩCOUTORVDDCLOADC1100nFGND4357 F03Figure 3. Protecting Against Collapse of VDD During Reverse RecoveryDesign ExampleThe following design example demonstrates the calculations involved for selecting components in a 12V systemwith 10A maximum load current (see Figure 4).M1Si4874DYVIN112VINFirst, calculate the RDS(ON) of the MOSFET to achieve the desired forward drop at full load. Assuming VDROP 0.1V,RDS(ON) VDROPI LOAD LTC4357The Si4874DY offers a good solution, in an S8 packagewith RDS(ON) 10mΩ(max) and BVDSS of 30V.The maximum power dissipation in the MOSFET is:P ILOAD2 RDS(ON) (10A)2 10mW 1WWith less than 39µF of local bypass, the recommended RCvalues of 100W and 0.1µF were used in Figure 4.OUTR1100ΩVDDC10.1µFGND0.1V10ARDS(ON) 10mΩGATEVOUTTO .1µFGND4357 F04Figure 4. 12V, 10A Diode-ORSince BVDSS VIN is much less than 100V, output clamping is unnecessary.4357fd
LTC4357Applications InformationLayout ConsiderationsConnect the IN and OUT pins as close as possible to theMOSFET’s source and drain pins. Keep the traces to theMOSFET wide and short to minimize resistive losses. SeeFigure 5.VIN1 SD 82 SD 73 S4 GMOSFETFor the DFN package, pin spacing may be a concern atvoltages greater than 30V. Check creepage and clearanceguidelines to determine if this is an issue. To increase thepin spacing between high voltage and ground pins, leavethe exposed pad connection open. Use no-clean solderto minimize PCB contamination.1 SD 82 SD 7D 63 SD 6D 54 GD 5OUT64357 F057GATE1LTC4357VOUTINGATE3OUTVIN2INVOUT54Figure 5. Layout Considerations4357fd
LTC4357Typical ApplicationsSolar Panel Charging a 00ΩINGATEVDDOUT LTC4357C10.1µF12VBATTERYLOADGND4357 TA02–12V Reverse Input Protection–48V Reverse Input CLAMPSMAT70AGNDGNDD1MMBD12054357 TA03D1MMBD1205VOUT48V10A4357 TA04Low Current ΩINVDDC10.1µFGATEOUTLTC4357GND4357 TA05ON OFFG1BSS1234357fd10
LTC4357Package DescriptionDCB Package6-Lead Plastic DFN (2mm 3mm)(Reference LTC DWG # 05-08-1715 Rev A)R 0.115TYP2.00 p0.10(2 SIDES)R 0.05TYP0.70 p0.053.55 p0.051.65 p0.05(2 SIDES)3.00 p0.10(2 SIDES)0.40 p 0.10461.65 p 0.10(2 SIDES)2.15 p0.05PACKAGEOUTLINEPIN 1 NOTCHR0.20 OR 0.25s 45o CHAMFERPIN 1 BARTOP MARK(SEE NOTE 6)30.25 p 0.050.50 BSC1.35 p0.05(2 SIDES)0.200 REFRECOMMENDED SOLDER PAD PITCH AND DIMENSIONS0.75 p0.051(DCB6) DFN 04050.25 p 0.050.50 BSC1.35 p0.10(2 SIDES)0.00 – 0.05BOTTOM VIEW—EXPOSED PADNOTE:1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (TBD)2. DRAWING NOT TO SCALE3. ALL DIMENSIONS ARE IN MILLIMETERS4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDEMOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE5. EXPOSED PAD SHALL BE SOLDER PLATED6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THETOP AND BOTTOM OF PACKAGE4357fd11
LTC4357Package DescriptionMS8 Package8-Lead Plastic MSOP(Reference LTC DWG # 05-08-1660 Rev F)3.00 p 0.102(.118 p .004)(NOTE 3)0.889 p 0.127(.035 p .005)5.23(.206)MIN0.254(.010)7 6 50.52(.0205)REF3.00 p 0.102(.118 p .004)(NOTE 4)4.90 p 0.152(.193 p .006)DETAIL “A”0o – 6o TYPGAUGE PLANE3.20 – 3.45(.126 – .136)0.53 p 0.152(.021 p .006)DETAIL “A”0.42 p 0.038(.0165 p .0015)TYP80.65(.0256)BSC11.10(.043)MAX2 340.86(.034)REF0.18(.007)RECOMMENDED SOLDER PAD LAYOUTNOTE:1. DIMENSIONS IN MILLIMETER/(INCH)2. DRAWING NOT TO SCALE3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAXSEATINGPLANE0.22 – 0.38(.009 – .015)TYP0.65(.0256)BSC0.1016 p 0.0508(.004 p .002)MSOP (MS8) 0307 REV F4357fd12
LTC4357Revision History(Revision history begins at Rev D)REVDATEDESCRIPTIONPAGE NUMBERD09/10Revised θJA value for MS8 package in Pin Configuration section and added MP-grade to Order Information sectionAdded two new plots and revised remaining curves in Typical Performance Characteristics section23, 4Updated Electrical Characteristics section4Revised Figure 2 and Figure 4 in Applications Information section84357fdInformation furnished by Linear Technology Corporation is believed to be accurate and reliable.However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.13
LTC4357Typical ApplicationPlug-In Card Input Diode for Supply Hold-UpBACKPLANE PLUG-IN CARDCONNECTORS CONNECTOR 1FDB363248VINGATELTC4357Hot SwapCONTROLLERVOUT1OUT VDDCHOLDUPSMAT70AGNDGNDFDB3632INGATELTC4357Hot SwapCONTROLLERVOUT2OUT VDDCHOLDUPSMAT70AGNDGNDGNDPLUG-IN CARDCONNECTOR 24357 TA06Related PartsPART NUMBERDESCRIPTIONCOMMENTSLT1641-1/LT1641-2Positive High Voltage Hot Swap ControllersActive Current Limiting, Supplies from 9V to 80VLTC1921Dual –48V Supply and Fuse MonitorUV/OV Monitor, –10V to –80V Operation, MSOP PackageLT4250–48V Hot Swap ControllerActive Current Limiting, Supplies from –18V to –80VLTC4251/LTC4251-1/LTC4251-2–48V Hot Swap Controllers in SOT-23Fast Active Current Limiting, Supplies from 48V Hot Swap Controllers in MS8/MS10Fast Active Current Limiting, Supplies from –15V, Drain AcceleratedResponseLTC4253–48V Hot Swap Controller with SequencerFast Active Current Limiting, Supplies from –15V, Drain AcceleratedResponse, Sequenced Power Good OutputsLT4256Positive 48V Hot Swap Controller withOpen-Circuit DetectFoldback Current Limiting, Open-Circuit and Overcurrent Fault Output,Up to 80V SupplyLTC4260Positive High Voltage Hot Swap ControllerWith I2C and ADC, Supplies from 8.5V to 80VLTC4261Negative High Voltage Hot Swap ControllerWith I2C and 10-Bit ADC, Adjustable Inrush and Overcurrent LimitsLTC4352Ideal Diode Controller with MonitorControls N-Channel MOSFET, 0V to 18V OperationLTC4354Negative Voltage Diode-OR Controllerand MonitorControls Two N-Channel MOSFETs, 1µs Turn-Off, 80V OperationLTC4355Positive Voltage Diode-OR Controllerand MonitorControls Two N-Channel MOSFETs, 0.5µs Turn-Off, 80V OperationLT4356-1/LT4356-2/LT4356-3Surge Stopper, Overvoltage and OvercurrentProtection RegulatorWide Operation Range: 4V to 80V, Reverse Input Protection to –60V,Adjustable Output Clamp Voltage4357fd14 Linear Technology Corporation1630 McCarthy Blvd., Milpitas, CA 95035-7417(408) 432-1900 l FAX: (408) 434-0507lwww.linear.comLT 0910 REV D PRINTED IN USA LINEAR TECHNOLOGY CORPORATION 2007
Current in Fault Condition VGATE VIN 5V l 1 2 A tOFF Gate Turn-Off Time VIN – VOUT 55mV – ––1V, VGATE – VIN 1V, CGATE 0pF l 300 500 ns DVSD Source-Drain Regulation Voltage (VIN – VOUT) VGATE – VIN 2.5V l 10 25 55 mV Note 2: All currents into pins are positive, all voltages are referenced to GND unless otherwise specified.
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IDEAL 4810-95/EP IDEAL 4850-95/EP IDEAL 5221-95EP IDEAL 6550-95EP C Only IDEAL 4810-95/EP Attach the enclosed hand-wheel for clamping. Parts and tools are in the tool set (C). Plug into socket. The machine must be connected directly to the socket. Installation
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Prime Ideals and Maximal Ideals Definition (Prime Ideal, Maximal Ideal). A prime ideal A of a commuta-tive ring R is a proper ideal of R such that a,b 2 R and ab 2 A implies a 2 A or b 2 A. A maximal ideal A of R is a proper ideal of R if, whenever B is an ideal of R and A B R, then B A or B R.
Amplifier Configurations . Voltage Amplifier: Voltage input and Voltage output The controlled source is a Voltage -controlled-Voltage Source A. v Open Circuit Voltage Gain can be found by applying a voltage source with R. s 0, and measuring the open circuit output voltage(no load or R. L infinity) Source Amplifier Load . Amplifier Input .
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