Spice Model Tutorial For Power MOSFETs - St
dcdOUT d1d1xd1yd1kINOUTG RmosddIN G630VdcRLd1ssIN-OUT-OUT-IN-G powerOUT IN Gcdg2IN OUT SourceRLsR dsd1z0IN IN R GpowerTjOUTING R didOUT G59OUTING R didOUT G60Cj1IN-IN IN IN-IN IN-4020R GBDSSRTj14Cj3T2RTj15IN IN-0CTcaseCj6R R003RTj6Cj50T4E E001RTj16Cj4T3edepOUT OUT-R edepaa0IN IN-E E001OUT OUT-baR R001Recovery diode modellingThermal impedance modelingCj2T1C CdsdRcap2d dedep0V22502Cref2BVdss modellingE22OUT OUT-0OUT OUT-alfa2Coss modelingEcap2 (table)G BVdssOUT-RTj13sxOUT d1bvdss1DC diode modelingCoss modellingR RmosR GdiodeV sense3Rx1RdVread21Ld2Drain218/242A brief description of self-heating model (V3 version)UM1575Figure 5. Power MOSFET self-heating model schematicGIPD081020131034FSR
UM15754.1A brief description of self-heating model (V3 version)Thermal networkThermal impedance network represents the basic element, which is featured inside themacro-model. It is used to transform the power dissipated inside the junction into a voltagerepresenting the temperature (Tj).Figure 6. Physical structure *,3' )65The voltage drop across the network is detected and used as emitter value inside behavioralequations used to model other parameters.Thermal impedance is the experimental data required to obtain the Cauer model (seeFigure 6).Figure 7. Thermal impedance profile and Cauer model.6LPXODWLRQ([SHULPHQWDO ( ( ( ( ( 7MWLPH V57M 57M 7 ,1 287 ,1 287 &M ( &M ( 57M 7 &M ( 57M 7 &M 57M 7 &M 7FDVH&M 5B*SRZHU*BSRZHU Doc ID 023670 Rev 1*,3' )659/2424
A brief description of self-heating model (V3 version)4.2UM1575Experimental data used to fit the modelThe model implementation requires the following experimental data: Typ. output characteristics at different temperatures Typ. transfer characteristics at different temperatures Typ. drain source breakdown voltage at different temperatures Typ. drain source on state resistance vs temperature Typ. gate threshold voltage vs temperature Typ. forward diode characteristics Typ. capacitances profile vs VDS Typ. gate charge Typ. switching on resistive load Typ. switching on inductive load Typ. free-wheeling diode characteristics Unclamped inductive switching Switching losses vs gate resistance Equivalent capacitance time related (Co(tr)) Equivalent capacitance energy related (Co(er)) Max. transient thermal impedanceFigure 8. Simulated and measured outputcharacteristicsFigure 9. Simulated curves at VGS 10 V ,' ,' 9'6 9 10/24 9'6 9 5'6RQ# &5'6RQ# &5'6RQ# &VLPXODWHGPHDVXUHG *,3' )65Doc ID 023670 Rev 1*,3' )65
UM1575A brief description of self-heating model (V3 version)Figure 10. Normalized RDS(on) vs temperature Figure 11. Normalized gate threshold voltage )(norm)ID 2.5A2.11.10ID 250µA1.91.001.71.51.30.901.10.800.90.70.5-50 -254.30255075 1000.70-50TJ( C)-252505075100TJ( C)COSS and CRSS modelCharge and current formulas for a linear capacitor are:Q C VdVi ( t ) C ------dtFor a non linear (voltage-dependent) time-independent capacitor these formulas become:Q C ( V ) dVdVi ( t ) C ( V ) ------dtThe C(V) function is obtained by lookup table.Figure 12. Capacitance profilesAM06481v1C(pF)1000Ciss100Coss1010
UM1575 Spice models - instructions to simulate 24 3 Spice models - instructions to simulate In Spice simulator, user has to upload the device symbol (.OLB file) and the Spice model (.LIB file) to simulate transistors in the schematic. 3.1 Installation In the package model, there are the following files: name.lib text file representing the .
–common semiconductor devices: diode, BJT, FET Advanced Topics in VLSI Systems 3 . SPICE History . 1976 SPICE 2D New MOS Models 1979 SPICE 2E Device Levels (R. Newton appears) 1980 SPICE 2G Pivoting (ASV appears) Advanced Topics in VLSI Systems . 4 . SPICE History
This is designed for integrated circuit design with special device models. Œ RAD-SPICE Š supplied by Meta-Software. This is for simulating circuits subjected to ionizing radiation. Œ IG-SPICE Œ supplied by A. B. Associates. Œ Cadence-SPICE Š supplied by Cadence Design Œ SPICE-Plus Š supplied by Valid Logic 6 What is SPICE OPUS ?
.lib .sub .mod 1.1.1 Schnelle Lösung mit Spice-Text in Simulationsoberfläche Für die schnelle Anwendung wird einfach die Spice-Datei als Spice-Befehl in die Schema-tic-Oberfläche hineinkopiert, siehe nachfolgende Abbildung Abb. 1.2: Abb. 1.2: Spice-Modelldatei als Spice-Directive hineinkopiert in die Simulationsoberfläche. Man
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Transformer SPICE Model . Edward Herbert February 14, 2008 . I have been frustrated with currently available SPICE models for transformers, particularly SPICE models that included the core losses and saturation for power when applied to power converter applications. This paper presents new SPICE models that I hope are useful.
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