July 14, 2016
July 14, 2016Scratch reduction throughnew CMP slurry technologiesTakafumi SakuradaPolishing Materials R&D Dept.Hitachi Chemical Co., Ltd.
Outline BackgroundEstimated root cause of scratchCorrelation of scratch with abrasive propertySummarySEMICON West 2016 CMP Symposium
Background3Polishing performanceRemoval rate, Planarity,Selectivity, Non-uniformity,Defects and Scratch1umShrinking Technology Node( 10 nm in 2016)Small scratches would affectthe operation of devicesIt is necessary toreduce scratches1umSEMICON West 2016 CMP Symposium
Statistical Analysis4We have investigated correlation of scratch with manufacturing process factor,raw materials property and slurry property.Moderate correlationWe need further analysisSEMICON West 2016 CMP Symposium
Analysis for 3 parameters5We chose three parameters to obtain better correlation with scratch.Raw material property CR2 0.59R2 0.14Scratch countsSlurry property BScratch countsScratch countsTime of Process AEach correlation was not so goodSEMICON West 2016 CMP SymposiumR2 0.05
Combined parameter6Combined parameter a x Time of Process A b x Slurry property B c x Raw material property C d*a, b, c, d constantScratch countsThree parameters was combined to obtain better correlationR2 0.97Combined parameterThe combined parameter could correlate to scratch.Now we control three parameters to reduce scratch.SEMICON West 2016 CMP Symposium
Estimated root cause of scratchAbrasive hardnessLarge Particle Count-(LPC)Large abrasiveAgglomerate abrasiveContamination-7HarderSofterScumAbrasive type-CeriaSilicaAluminaDiamondSEMICON West 2016 CMP Symposium-From wafer edgeFrom polishing padAgglomerate abrasiveContamination-MetalCeramic
100 nmCalcined CeriaScratch (relative value)Effect of Large Particle Count (LPC) on ScratchSaturated!LPC ( 1um, relative value)LPC correlated scratch. But scratch count saturated at a critical point.SEMICON West 2016 CMP Symposium8
Estimated root cause of scratchAbrasive hardnessLarge Particle Count-(LPC)Large abrasiveAgglomerate abrasiveContamination-9HarderSofterScumAbrasive type-CeriaSilicaAluminaDiamondSEMICON West 2016 CMP Symposium-From wafer edgeFrom polishing padAgglomerate abrasiveContamination-MetalCeramic
Measurement of abrasive hardness10Three kind of calcined Ceria abrasive were made bychanging manufacturing process100 nmCalcined CeriaCeOCeCeOCeOCeOOCeOCeOCeCeOCeAbrasive AAbrasive BCeOCeOCeCeCeAbrasive CIt is difficult to measure hardness of abrasive directly.SEMICON West 2016 CMP SymposiumO
Measurement of abrasive hardness11We estimated hardness of abrasive to use a beads mill0.1mm SiO2 beadAbrasiveBead millSiO2 is slightly brokenby collision withabrasiveSEMICON West 2016 CMP SymposiumSi contaminated intoslurry
Measurement of abrasive hardness12Result of contaminated Si amount after millingCeOCeCeOCeCeOCeOOCeOCeOCeCeOCeAbrasive AOCeOCeOCeCeAbrasive CAbrasive BSamplesAbrasive AAbrasive BAbrasive CBlank(Bead only)Si amount(relative value, ICP-MS)133120111100Scratch count(relative value)111103100-Bead mill method can be estimated abrasive hardness and scratch levelSEMICON West 2016 CMP Symposium
Estimated root cause of scratchAbrasive hardnessLarge Particle Count-(LPC)Large abrasiveAgglomerate abrasiveContamination-13HarderSofterScumAbrasive type-CeriaSilicaAluminaDiamondSEMICON West 2016 CMP Symposium-From wafer edgeFrom polishing padAgglomerate abrasiveContamination-MetalCeramic
Abrasive size effectNano Size Cerium(NSC)Particle size and LPC of NSC are extremely lowSEMICON West 2016 CMP Symposium14
SiO2 Removal Rate and Scratch CountSiO2 removal rate of NSC slurry is equivalent to calcined ceria slurry.NSC slurry can reduce scratch count.SEMICON West 2016 CMP Symposium15
Further approach to reduce scratch16Zeta potential (mV)Surface potential of SiO2, Abrasive and polishing pad40.030.020.010.00.0-10.0 1-20.0-30.0-40.0-50.0-60.02345678910 11 12 13SiO2 filmAbrasivePolishing padpHIs there correlation between surface potential and scratch?SEMICON West 2016 CMP Symposium
Further approach to reduce scratch17Combination between film, abrasive and polishing padPad- - - Abrasive -Pad- - - Abrasive Pad Abrasive - - - Film- - - Film- - - FilmCase 1Case 2Case 3Total forceis strong.scratch’sreason?We try to control each surface potential of material(film, abrasive and pad)And we investigate relationship between surface potential and scratchSEMICON West 2016 CMP Symposium
Summary The influence of scratch becomes ever more critical in theoverall CMP process. Large particle in slurry may cause scratch.18 We have investigated correlation of scratch with abrasive size,shape, hardness and other factors in CMP. It is suggested thathard abrasive cause scratch. Now we try to control the interaction between wafer surface,slurry abrasive and polishing pad surface to reduce scratch.SEMICON West 2016 CMP Symposium
The influence of scratch becomes ever more critical in the overall CMP process. Large particle in slurry may cause scratch. We have investigated correlation of scratch with abrasive size, shape, hardness and other factors in CMP. It is sug
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