MWCT101XSF MWCT101XS Data Sheet - Arrow Electronics

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NXP SemiconductorsData Sheet: Advance InformationMWCT101XS Data SheetKey Features Operating characteristics– Voltage range: 2.7 V to 5.5 V– Ambient temperature range: -40 C to 105 C forHSRUN mode, -40 C to 125 C for RUN mode Arm Cortex-M4F core, 32-bit CPU– Supports up to 112 MHz frequency (HSRUN) with1.25 Dhrystone MIPS per MHz– Arm Core based on the Armv7 Architecture andThumb -2 ISA– Integrated Digital Signal Processor (DSP)– Configurable Nested Vectored Interrupt Controller(NVIC)– Single Precision Floating Point Unit (FPU) Clock interfaces– 4 - 40 MHz fast external oscillator (SOSC)– 48 MHz Fast Internal RC oscillator (FIRC)– 8 MHz Slow Internal RC oscillator (SIRC)– 128 kHz Low Power Oscillator (LPO)– Up to 112 MHz (HSRUN) System Phased LockLoop (SPLL)– Up to 50 MHz DC external square wave input clock– Real Time Counter (RTC) Power management– Low-power Arm Cortex-M4F core with excellentenergy efficiency– Power Management Controller (PMC) with multiplepower modes: HSRUN, RUN, STOP, VLPR, andVLPS. Note: CSEc (Security) or EEPROM writes/erase will trigger error flags in HSRUN mode (112MHz) because this use case is not allowed toexecute simultaneously. The device will need toswitch to RUN mode (80 Mhz) to execute CSEc(Security) or EEPROM writes/erase.– Clock gating and low power operation supported onspecific peripherals.Document Number MWCT101xSFRev. 2, 07/2018MWCT101XSF Memory and memory interfaces– Up to 2 MB program flash memory with ECC– 64 KB FlexNVM for data flash memory with ECCand EEPROM emulation. Note: CSEc (Security) orEEPROM writes/erase will trigger error flags inHSRUN mode (112 MHz) because this use case isnot allowed to execute simultaneously. The devicewill need to switch to RUN mode (80 MHz) toexecute CSEc (Security) or EEPROM writes/erase.– Up to 256 KB SRAM with ECC– Up to 4 KB of FlexRAM for use as SRAM orEEPROM emulation– Up to 4 KB Code cache to minimize performanceimpact of memory access latencies– QuadSPI with HyperBus support Mixed-signal analog– Up to two 12-bit Analog-to-Digital Converter(ADC) with up to 32 channel analog inputs permodule– One Analog Comparator (CMP) with internal 8-bitDigital to Analog Converter (DAC) Debug functionality– Serial Wire JTAG Debug Port (SWJ-DP) combines– Debug Watchpoint and Trace (DWT)– Instrumentation Trace Macrocell (ITM)– Test Port Interface Unit (TPIU)– Flash Patch and Breakpoint (FPB) Unit Human-machine interface (HMI)– Up to 89 GPIO pins with interrupt functionality– Non-Maskable Interrupt (NMI)This document contains information on a pre-production product. Specificationsand pre-production information herein are subject to change without notice.Downloaded from Arrow.com.

Communications interfaces– Up to three Low Power Universal Asynchronous Receiver/Transmitter (LPUART/LIN) modules with DMA supportand low power availability– Up to three Low Power Serial Peripheral Interface (LPSPI) modules with DMA support and low power availability– Up to two Low Power Inter-Integrated Circuit (LPI2C) modules with DMA support and low power availability– Up to three FlexCAN modules (with optional CAN-FD support)– FlexIO module for emulation of communication protocols and peripherals (UART, I2C, SPI, I2S, LIN, PWM, etc). Safety and Security– Cryptographic Services Engine (CSEc) implements a comprehensive set of cryptographic functions as described in theSHE (Secure Hardware Extension) Functional Specification. Note: CSEc (Security) or EEPROM writes/erase willtrigger error flags in HSRUN mode (112 MHz) because this use case is not allowed to execute simultaneously. Thedevice will need to switch to RUN mode (80 MHz) to execute CSEc (Security) or EEPROM writes/erase.– 128-bit Unique Identification (ID) number– Error-Correcting Code (ECC) on flash and SRAM memories– System Memory Protection Unit (System MPU)– Cyclic Redundancy Check (CRC) module– Internal watchdog (WDOG)– External Watchdog monitor (EWM) module Timing and control– Up eight independent 16-bit FlexTimers (FTM) module, offering up to 64 standard channels (IC/OC/PWM)– One 16-bit Low Power Timer (LPTMR) with flexible wake up control– Two Programmable Delay Blocks (PDB) with flexible trigger system– One 32-bit Low Power Interrupt Timer (LPIT) with 4 channels– 32-bit Real Time Counter (RTC) I/O and package– 64-pin LQFP, 100-pin LQFP, 100-pin MAPBGA package options 16 channel DMA with up to 63 request sources using DMAMUXMWCT101XS Data Sheet, Rev. 2, 07/20182Downloaded from Arrow.com.NXP Semiconductors

Table of Contents1Block diagram. 42Feature comparison. 53Ordering parts.746.2.56.3 Memory and memory interfaces.276.3.1specifications.273.2 Ordering information . 86.3.1.1General. 9Flash timing specifications —commands. 276.3.1.24.2 Voltage and current operating requirements.106.3.24.3 Thermal operating characteristics.11Reliability specifications.30QuadSPI AC specifications.316.4 Analog modules. 354.4 Power and ground pins. 116.4.1ADC electrical specifications. 354.5 LVR, LVD and POR operating requirements.136.4.1.112-bit ADC operating conditions. 354.6 Power mode transition operating behaviors. 136.4.1.212-bit ADC electrical characteristics. 374.7 Power consumption. 146.4.24.8 ESD handling ratings.17CMP with 8-bit DAC electrical specifications. 396.5 Communication modules. 434.9 EMC radiated emissions operating behaviors. 176.5.1LPUART electrical specifications. 43I/O parameters.176.5.2LPSPI electrical specifications. 435.1 AC electrical characteristics. 176.5.3LPI2C electrical specifications. 495.2 General AC specifications. 186.5.4FlexCAN electical specifications.505.3 DC electrical specifications at 3.3 V Range. 186.5.5Clockout frequency.505.4 DC electrical specifications at 5.0 V Range. 196.6 Debug modules. 505.5 AC electrical specifications at 3.3 V range . 206.6.1SWD electrical specofications . 505.6 AC electrical specifications at 5 V range . 216.6.2Trace electrical specifications.525.7 Standard input pin capacitance. 226.6.3JTAG electrical specifications. 535.8 Device clock specifications. 226Flash memory module (FTFC) electrical3.1 Determining valid orderable parts . 74.1 Absolute maximum ratings.95SPLL electrical specifications .277Thermal attributes. 56Peripheral operating requirements and behaviors. 237.1 Description.566.1 System modules. 237.2 Thermal characteristics.566.2 Clock interface modules. 237.3 General notes for specifications at maximum junction6.2.1External System Oscillator electrical specifications.236.2.2External System Oscillator frequency specifications . 256.2.3System Clock Generation (SCG) specifications. 266.2.3.1Fast internal RC Oscillator (FIRC)electrical specifications. 266.2.3.2Slow internal RC oscillator (SIRC)temperature. 598Dimensions.608.1 Obtaining package dimensions . 609Pinouts.619.1 Package pinouts and signal descriptions.6110 Revision History.61electrical specifications . 266.2.4Low Power Oscillator (LPO) electrical specifications.27MWCT101XS Data Sheet, Rev. 2, 07/2018NXP SemiconductorsDownloaded from Arrow.com.3

Block diagram1 Block diagramThe figure below shows a superset high level architecture block diagram of the device.Other devices within the family have a subset of the features. See Feature comparison forchip specific values.AsyncTraceportJTAG &Serial WireArm Cortex mICODEDCODELMEMUpper regionEIMLMEMcontrollerLower regionSystem MPU1MuxMain SRAM2AWICITMSystem MPU1DMAMUXLPO128 kHzeDMAFIRC48 MHzSIRC8 MHzSOSC4-40 MHz 8-40 MHzSPLLTCD512BCode CacheM3M2M1M0S2S1Clock generationCrossbar switch (AXBS-Lite)S3S0System MPU1MuxSystem MPU1QuadSPIGPIOFlash memorycontrollerPeripheral bus controllerWDOGERM12-bit ADCEWMCMP8-bit DACLPUARTCRCTRGMUXLPSPILPI2CFlexIOLow ITQSPI1: On this device, NXP’s system MPU implements the safety mechanisms to prevent masters fromaccessing restricted memory regions. This system MPU provides memory protection at thelevel of the Crossbar Switch. Each Crossbar master (Core, DMA) can be assigneddifferent access rights to each protected memory region. The Arm M4 core version in this familydoes not integrate the Arm Core MPU, which would concurrently monitor only core-initiated memoryaccesses. In this document, the term MPU refers to NXP’s system MPU.2: For the device-specific sizes, see the "On-chip SRAM sizes" table in the "Memories and Memory Interfaces"chapter of the MWCT101xS Series Reference Manual.3: CSEc (Security) or EEPROM writes/erase will trigger error flags in HSRUN mode (112 MHz) because thisuse case is not allowed to execute simultaneously. The device needs to switch to RUN mode (80 MHz) toexecute CSEc (Security) or EEPROM writes/erase.Code flashmemoryData flashmemoryCSEc3Device architectural IPon all MWCT101xS devicesKey:Peripherals presenton all MWCT101xS devicesPeripherals presenton selected MWCT101xS devices(see the "Feature Comparison"section in the RM)Figure 1. High-level architecture diagram for the MWCT101xS familyMWCT101XS Data Sheet, Rev. 2, 07/20184Downloaded from Arrow.com.NXP Semiconductors

Feature comparison2 Feature comparisonThe following figure summarizes the memory and package options for the MWCT101xSseries and demonstrates where this device fits within the overall series. All devices whichshare a common package are pin-to-pin compatible.NOTEAvailability of peripherals depends on the pin availability in aparticular package. For more information see IO SignalDescription Input Multiplexing sheet(s) attached withReference Manual.MWCT101XS Data Sheet, Rev. 2, 07/2018NXP SemiconductorsDownloaded from Arrow.com.5

Feature 1016SArm Cortex -M4FCoreup to 112 MHz (HSRUN)FrequencyIEEE-754 FPUHW security module (CSEc)11xCRC modulecapable up to ASIL-BISO 26262Peripheral speedup to 112 MHz (HSRUN)SystemCrossbarDMAEWMMemory protection unitFIRC CMUWatchdog1xLow power modesHSRUN mode1up to 89Number of I/Osup to 89up to 892.7 - 5.5 VSingle supply voltageOperating temperature (Ta) Temperature ambientFlash-40 to 105ºC / 125ºC1 MB512 KB2 MB2Error correction code (ECC)MemorySystem RAM (including FlexRAM)128 KB64 KBFlexRAM (also available as system RAM)4 KBCache4 KBEEPROM emulated byFlexRAM14 KB (up to 64 KB D-Flash)TimerLow power interrupt timer1x4x (32)Low power timer (LPTMR)1xReal time counter (RTC)1xAnalog1x (64)1x (73)1x (81)12-bit SAR ADC (1 MSPS each)2x (16)2x (24)2x (32)Comparator with 8-bit DAC1xLow power UART/LINCommunication8x (64)Trigger mux (TRGMUX)3x(Supports LIN protocol versions 1.3, 2.0, 2.1, 2.2A and SAE J2602)Low power SPI3xLow power I2CFlexCAN(CAN-FD ISO/CD 11898-1)Debug & trace3x(1x with FD)3x(2x with FD)3x(3x with FD)1xSWD,Ecosystem(IDE, compiler, debugger)Packages52x1xFlexIO (8 pins configurable as UART, SPI, I2C, I2S)IDEs6x (48)2xProgrammable delay block (PDB)OtherSee footnote 3QuadSPI incl.HyperBus External memory interfaceFlexTimer (16-bit counter) 8 channels256 KBJTAG4(ITM, SWV, SWO)SWD, JTAG(ITM, SWV,SWO), ETMNXP S32 Design Studio GCC GHS END:Not implementedAvailable on the device1 No write or erase access to Flash module, including Security (CSEc) and EEPROM commands, are allowed whendevice is running at HSRUN mode (112MHz) or VLPR mode.2 Available when EEEPROM, CSEc and Data Flash are not used. Else only up to 1,984 KB is available for Program Flash.3 4 KB (up to 512 KB D-Flash as a part of 2M Flash). Up to 64 KB of flash is used as EEPROM backup and the remaining 448 KBof the last 512 KB block can be used as Data flash or Program flash. See chapter FTFC for details.4 Only for Boundary Scan Register5 See Dimensions for package drawingFigure 2. MWCT101xS product series comparisonMWCT101XS Data Sheet, Rev. 2, 07/20186Downloaded from Arrow.com.NXP Semiconductors

Ordering parts3 Ordering parts3.1 Determining valid orderable partsTo determine the orderable part numbers for this device, go to www.nxp.com andperform a part number search.NOTENot all part number combinations existMWCT101XS Data Sheet, Rev. 2, 07/2018NXP SemiconductorsDownloaded from Arrow.com.7

Ordering parts3.2 Ordering informationM/P WCT 1 0 1 4 SF V LH N RProduct statusProduct lineGenerationConfigPower ClassMemory SizeApplicationCore PlatformTemperaturePackageIncludes stackTape and ReelProduct statusP: Pre QualificationM: Fully QualifiedProduct lineWCT: Wireless ChargingTechnologyMemory size (Flash)M4FLQFP456Pins512 K1M2M64LH-100LLMHGeneration1: 1st product Gen2: 2nd product GenApplicationBlank CustomerA Auto/IndustrS A AUTOSARConfig0 Standard1 PremiumCore platformF: Arm Cortex M4FPower Class0 5W1 15 W2 60 W3 200 WPackageTemperatureV: -40C to 105CBGAIncludes stackBlank No stackN NFCTape and ReelT: Trays and TubesR: Tape and ReelFigure 3. Ordering informationMWCT101XS Data Sheet, Rev. 2, 07/20188Downloaded from Arrow.com.NXP Semiconductors

General4 General4.1 Absolute maximum ratings NOTEFunctional operating conditions appear in the DC electricalcharacteristics. Absolute maximum ratings are stressratings only, and functional operation at the maximumvalues is not guaranteed. See footnotes in the followingtable for specific conditions.Stress beyond the listed maximum values may affect devicereliability or cause permanent damage to the device.All the limits defined in the datasheet specification must behonored together and any violation to any one or more willnot guarantee desired operation.Unless otherwise specified, all maximum and minimumvalues in the datasheet are across process, voltage, andtemperature.Table 1. Absolute maximum ratingsSymbolConditions1Parameter2VDD2.7 V - 5. 5V input supply voltageVREFH—MinMax-0.35.83UnitV5.83V3.3 V / 5.0 V ADC high reference voltage—-0.3Continuous DC input current (positive /negative) that can be injected into an I/Opin—-3 3mAContinuous DC Voltage on any I/O pinwith respect to VSS—-0.85.85VSum of absolute value of injected currentson all the pins (Continuous DC limit)——30mATramp6ECU supply ramp rate—0.5 V/min500 V/ms—Tramp MCU74IINJPAD DC ABSVIN DCIINJSUM DC ABSMCU supply ramp rate—0.5 V/min100 V/ms—TA8Ambient temperature—-40125 CTSTGStorage temperature—-55165 C—9VIN TRANSIENTTransient overshoot voltage allowed onI/O pin beyond VIN DC limit—6.8V1. All voltages are referred to VSS unless otherwise specified.2. As VDD varies between the minimum value and the absolute maximum value the analog characteristics of the I/O and theADC will both change. See section I/O parameters and ADC electrical specifications respectively for details.3. 60 s lifetime – No restrictions i.e. The part can switch.10 hours lifetime – Device in reset i.e. The part cannot switch.MWCT101XS Data Sheet, Rev. 2, 07/2018NXP SemiconductorsDownloaded from Arrow.com.9

General4. When input pad voltage levels are close to VDD or VSS, practically no current injection is possible.5. While respecting the maximum current injection limit6. This is the Electronic Control Unit (ECU) supply ramp rate and not directly the MCU ramp rate. Limit applies to bothmaximum absolute maximum ramp rate and typical operating conditions.7. This is the MCU supply ramp rate, and the ramp rate assumes that the HW design guidelines in AN5426 are followed.Limit applies to both maximum absolute maximum ramp rate and typical operating conditions.8. TJ (Junction temperature) 135 C. Assumes TA 125 C for RUN modeTJ (Junction temperature) 125 C. Assumes TA 105 C for HSRUN mode Assumes maximum θJA for 2s2p board. See Thermal characteristics9. 60 seconds lifetime; device in reset (no outputs enabled/toggling)4.2 Voltage and current operating requirementsNOTEDevice functionality is guaranteed up to the LVR assert level;however, electrical performance of 12-bit ADC, CMP with 8bit DAC, IO electrical characteristics, and communicationmodules electrical characteristics would be degraded whenvoltage drops below 2.7 VTable 2. Voltage and current operating requirements 1SymbolDescriptionMin.Max.UnitNotesVDD2Supply voltage2.735.5V400.1V2.75.5V4VDD OFFVoltage allowed to be developed on VDDpin when it is not powered from anyexternal power supply source.VDDAAnalog supply voltageVDD – VDDA– 0.10.1V4VREFHVDD-to-VDDA differential voltageADC reference voltage high2.7VDDA 0.1V5VREFLADC reference voltage low-0.10.1VOpen drain pullup voltage levelVDDVDDVVODPU7IINJPAD DC OPContinuous DC input current (positive /negative) that can be injected into an I/Opin-3 3mAIINJSUM DC OPContinuous total DC input current that canbe injected across all I/O pins such thatthere's no degradation in accuracy ofanalog modules: ADC and ACMP (Seesection Analog Modules)—30mA61. Typical conditions assumes VDD VDDA VREFH 5 V, temperature 25 C and typical silicon process unless otherwisestated.2. As VDD varies between the minimum value and the absolute maximum value the analog characteristics of the I/O and theADC will both change. See section I/O par

1 No write or erase access to Flash module, including Security (CSEc) and EEPROM commands, are allowed when device is running at HSRUN mode (112MHz) or VLPR mode. 2 Available when EEEPROM, CSEc and Data Flash are not used. Else only up to 1,984 KB is available for Program Flash. 3 4 KB (up to 512 KB D-Flash as a part of 2M Flash).

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